RU2597953C1 - Integral micromechanical gyroscope-accelerometer - Google Patents

Abstract

FIELD: measuring equipment.

SUBSTANCE: invention relates to measurement equipment and microsystems. This invention consists in the fact that the device additionally includes four additional movable electrode of capacitance displacement transducers, made in the form of perforated plates with comb-shaped structures on both sides of semiconducting material and arranged with clearance relative to substrate eight additional fixed electrodes of capacitance displacement transducers, made with comb-shape structures on one side and located directly on the substrate so that they form with additional moving electrodes of capacitance transducers movements of capacitors in the plane of their plates through side gaps and interpenetrating combs of electrodes, four additional movable electrodes of electrostatic actuators made in the form of perforated plates with comb-shaped structures on both sides of semiconducting material and arranged with clearance relative to substrate nine additional fixed electrodes of electrostatic actuators made with comb-shaped structures on one side of the semiconducting material and located directly on the substrate so that they form an electrostatic interaction with moving electrodes of electrostatic actuators in plane of their plates through side gaps and interpenetrating combs of electrodes, sixteen U-shaped spring beam systems, made in the form of plates of semiconducting material and arranged with clearance relative to substrate and twenty one additional support made of semiconducting material and located directly on the substrate, where two inertia masses are made with perforation, a substrate and fixed electrodes of capacitance displacement transducers are made of semiconducting material.

EFFECT: technical result is possibility of measuring angular velocity along axis Y located in plane of the substrate, and Z directed perpendicular to plane of the substrate, and values of linear acceleration along Χ, Y, and Z axes.

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Description

The present invention relates to the field of measuring technology and microsystem technology, and more particularly to integrated measuring elements of angular velocity and linear acceleration.

Known integrated micromechanical gyroscope [V.P. Timoshenkov, S.P. Timoshenkov, A.A. Mindeeva, Development of the design of a microgyroscope based on KNI technology, University News, Electronics, No. 6, 1999, p. 49, Fig. 2], comprising a dielectric substrate with four electrodes deposited on it and an inertial mass located with a gap relative to the dielectric substrate, made in the form of a plate of semiconductor material, forming a flat capacitor with a pair of electrodes deposited on the substrate and connected to the internal oscillating system by means of elastic beams made of a semiconductor material, which at one end are rigidly attached to the inertial mass, and at the other to the internal oscillatory system, is made a flat capacitor formed from a semiconductor material forming with another pair of electrodes deposited on a substrate, used as an electrostatic drive, the oscillating system being connected to the external frame using elastic beams made of semiconductor material that are attached to the internal oscillating system at one end and the other to to an external frame made of a semiconductor material and located directly on the dielectric substrate.

This gyroscope allows you to measure the angular velocity along the Z axis directed perpendicular to the plane of the gyroscope substrate.

Signs of an analogue that coincide with the essential features are inertial mass, elastic beams made of semiconductor material and located with a gap relative to the substrate, an electrode located directly on the substrate.

A disadvantage of the gyroscope design is the impossibility of measuring the angular velocity around the Y axis located in the plane of the substrate and the linear accelerations along the Χ, Y, Z axes.

A functional analogue of the claimed object is a micromechanical gyroscope [S.E. Alper, T. Akin, A Planar Gyroscope Using a Standard Surface Micromachining Process, The 14th European Conference on Solid-State Transducers (EUROSENSORS XIV), 2000, p. 387, fig. 1], comprising a substrate with four electrodes located on it made of a semiconductor material, an inertial mass located with a gap relative to the substrate, made in the form of a plate of semiconductor material, forming a pair of capacitors located on the substrate of the electrodes and connected to the external suspension using elastic beams made of semiconductor material, which at one end are rigidly attached to the inertial mass, and at the other to an external suspension made of semiconductor of a single material and forming with a different pair of electrodes located on the substrate a flat capacitor used as an electrostatic drive, the external suspension being connected to the supports using elastic beams made of semiconductor material, which are rigidly connected to the external suspension at one end and to the supports with the other made of semiconductor material and located directly on the substrate, and two electrodes made of semiconductor material and located directly but on a substrate with a gap relative to the external suspension so that they form flat capacitors used as electrostatic drives.

This gyroscope allows you to measure the magnitude of the angular velocity while rotating it around the Z axis, perpendicular to the plane of the gyroscope substrate.

Signs of an analogue that coincide with the essential features are electrodes made of a semiconductor material and located directly on the substrate, inertial mass, elastic beams made of semiconductor material and located with a gap relative to the substrate, supports made of semiconductor material and located directly on the substrate.

A design flaw in the gyroscope is the impossibility of measuring the angular velocity around the Y axis located in the plane of the substrate and the linear accelerations along the Χ, Υ, Ζ axes

Of the known closest in technical essence to the claimed object is an integrated micromechanical gyroscope [V.Ya. Raspopov, Micromechanical devices, Textbook, Mechanical Engineering, Moscow, 2007, p. 59, fig. 1.44], containing a dielectric substrate with metal electrodes of capacitive displacement transducers located on it, two inertial masses located with a gap relative to the dielectric substrate and made in the form of plates of semiconductor material, forming flat capacitors with connected electrodes of capacitive transducers of displacement, and associated with a dielectric substrate through a system of elastic beams, which at one end are connected to inertial masses and others with supports made of a semiconductor material and located on a dielectric substrate, one fixed electrode of an electrostatic drive made of a semiconductor material with comb structures on both sides of it and located directly on the dielectric substrate between inertial masses, with the possibility of electrostatic interaction with them in the plane of their plates through the lateral gaps and interpenetrating each other with comb of electrodes, two stationary electrodes electrostatic drives made with comb structures on one side of the semiconductor material and located directly on the dielectric substrate on the outer sides of the inertial masses, with the possibility of electrostatic interaction with them in the plane of their plates through lateral gaps and interpenetrating each other with comb electrodes.

This gyroscope allows you to measure the angular velocity along the Y axis located in the plane of the substrate.

Signs of the prototype, coinciding with the essential features, are two inertial masses, elastic beams made of semiconductor material and located with a gap relative to the substrate, supports made of semiconductor material and located directly on the substrate, electrodes of the capacitive displacement transducer located on the substrate, stationary electrodes electrostatic drives made with comb structures of semiconductor material and located on the substrate.

The disadvantage of the design of this gyroscope is the impossibility of measuring the magnitude of the angular velocity around the Z axis directed perpendicular to the plane of the substrate, and the linear accelerations along the Χ, Y, Z axes.

The objective of the invention is the ability to measure the angular velocity along the Y axis located in the plane of the substrate, and Z directed perpendicular to the plane of the substrate, and the values of linear accelerations along the axes Χ, Y, Z.

The technical result achieved by the implementation of the present invention consists in the possibility of measuring the angular velocity along the Y axis located in the plane of the substrate, and Z directed perpendicular to the plane of the substrate and the values of linear accelerations along the axes Χ, Y, Z.

The technical result is achieved through the introduction of four additional movable electrodes of capacitive displacement transducers, made in the form of plates with perforations with comb structures on both sides of semiconductor material and arranged with a gap relative to the substrate, eight additional stationary electrodes of capacitive displacement transformers made with comb structures from one sides of semiconductor material and located directly on the substrate so that they comfort with additional movable electrodes of capacitive displacement transducers capacitors in the plane of their plates through lateral gaps and combs of electrodes interpenetrating each other, four additional movable electrodes of electrostatic drives, made in the form of perforated plates with comb structures on both sides of semiconductor material and located with a gap relative to the substrate, nine additional fixed electrodes of electrostatic drives made with comb structures on one side of the semiconductor material and located directly on the substrate, so that they form an electrostatic interaction with the movable electrodes of the electrostatic drives in the plane of their plates through the lateral gaps and interpenetrating electrode combs, sixteen "U" -shaped systems of elastic beams, made in the form of plates of semiconductor material and located with a gap relative to the substrate, and twenty-one additional supports made of semiconductor ovogo material and located directly on the substrate, wherein the two inertia masses are made with perforation, and the substrate electrodes and capacitive displacement transducers formed of semiconductor material.

To achieve the required technical result, an integrated micromechanical gyroscope containing a substrate with electrodes of capacitive displacement transducers located on it, two inertial masses located with a gap relative to the substrate and made in the form of plates of semiconductor material, forming flat capacitors with electrodes of capacitive displacement transducers due to their full overlap, and fixed electrodes of electrostatic drives, made with comb structures and semiconductor material and located on the substrate, four additional movable electrodes of capacitive displacement transducers are introduced, made in the form of perforated plates with comb structures on both sides of semiconductor material and arranged with a gap relative to the substrate, eight additional stationary capacitive displacement transducer electrodes made with comb structures on the one hand made of semiconductor material and located directly on the substrate so what they form, with additional movable electrodes of capacitive displacement transducers, capacitors in the plane of their plates through lateral gaps and combing electrodes interpenetrating each other, four additional mobile electrodes of electrostatic drives, made in the form of perforated plates with comb structures on both sides of semiconductor material and located with a gap relative to the substrate, nine additional fixed electrodes of electrostatic drives made with gr on the one hand made of semiconductor material and located directly on the substrate, so that they form an electrostatic interaction with the movable electrodes of electrostatic drives in the plane of their plates through lateral gaps and interpenetrating electrode combs, sixteen "U" -shaped systems of elastic beams made in the form of plates of semiconductor material and located with a gap relative to the substrate, and twenty-one additional support made of floor rovodnikovogo material and disposed directly on the substrate, wherein the two inertia masses are made with perforation, and the substrate electrodes and capacitive displacement transducers formed of semiconductor material.

Comparing the proposed device with the prototype, we see that it contains new features, that is, meets the criterion of novelty. Carrying out a comparison with analogues, we conclude that the proposed device meets the criterion of "significant differences", since no new features are shown in the analogues.

In FIG. 1 shows the topology of the proposed integrated micromechanical gyroscope-accelerometer and sections are shown. In FIG. 2 shows the structure of the proposed integrated micromechanical gyroscope-accelerometer.

The integrated micromechanical gyroscope-accelerometer (Fig. 1) contains a semiconductor substrate 1 with two fixed electrodes of capacitive displacement transducers 2, 3 located on it and made of semiconductor material, eight fixed electrodes of capacitive displacement transducers 4, 5, 6, 7, 8, 9 , 10, 11, made with comb structures on one side of a semiconductor material and located directly on the semiconductor substrate 1, twelve fixed electrodes are electrostatically their drives 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, made with comb structures on one side of the semiconductor material and located directly on the semiconductor substrate 1, four additional movable electrodes of electrostatic drives 24, 25, 26, 27, made in the form of plates with perforation with comb structures on both sides of a semiconductor material and located with a gap relative to the semiconductor substrate 1, forming an electrostatic interaction with fixed electrodes of static drives 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23 in the plane of their plates through lateral gaps and interpenetrating each other with electrode combs, and connected to the semiconductor substrate 1 by means of elastic beams 28, 29, 30, 31, 32, 33, 34, 35, made of semiconductor material, which are connected at one end to the movable electrodes of electrostatic drives 24, 25, 26, 27, and others with supports 36, 37, 38, 39, 40, 41, made of a semiconductor material and located directly on the semiconductor substrate 1, two inertial masses 42, 43, made in the form of plates with perforation from a semiconductor material and located with a gap relative to the semiconductor substrate 1, forming flat capacitors due to their complete overlap associated with the movable electrodes of electrostatic drives with electrodes of capacitive displacement transducers 2, 3 located on the semiconductor substrate 1 24, 25, 26, 27 using elastic beams 44, 45, 46, 47 made of a semiconductor material and located with a gap relative to the semiconductor substrate 1, four movable electrodes of capacitive displacement transducers 48, 49, 50, 51, made in the form of perforated plates with comb structures on both sides of a semiconductor material and located with a gap relative to the semiconductor substrate 1, forming with the electrodes of capacitive displacement transducers 4 located on the semiconductor substrate 1 , 5, 6, 7, 8, 9, 10, 11 capacitors in the plane of their plates through lateral gaps and interpenetrating each other with comb electrodes connected with inertial masses 42, 43 with elastic beams 52, 53, 54, 55, made of a semiconductor material and located with a gap relative to the semiconductor substrate 1, and connected to the semiconductor substrate 1 using "U" -shaped systems of elastic beams 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, which are connected at one end to the movable electrodes of capacitive displacement transducers 48, 49, 50, 51, and others with supports 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, made of a semiconductor material and located directly on the semiconductor substrate 1, eight supports 83, 84, 85, 86, 87, 88, 89, 90, made of a semiconductor material and located directly on the semiconductor substrate 1.

The device operates as follows.

When linear acceleration occurs along the X axis located in the plane of the semiconductor substrate 1, the inertial masses 42, 43 under the action of inertia begin to move in the plane of the semiconductor substrate 1 along the X axis synchronously, due to the bending of the elastic beams 28, 29, 30, 31, 32, 33, 34, 35, 52, 53, 54, 55. The voltage difference generated by the capacitive displacement transducers formed by the movable electrodes 24, 25, 26, 27 and the stationary electrodes 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, respectively, by changing the length of the overlapping fingers comb of electrodes, characterizes the magnitude of the linear acceleration.

When linear acceleration occurs along the Y axis located in the plane of the semiconductor substrate 1, the inertial masses 42, 43 under the action of inertia begin to move in the plane of the semiconductor substrate 1, directed along the Y axis synchronously, due to the bending of the elastic beams 44, 45, 46, 47. The voltage difference generated in the pairs of capacitive displacement transducers formed by the movable electrodes 48, 49, 50, 51 and the stationary electrodes 4, 5, 6, 7, 8, 9, 10, 11, respectively, due to a change in the gap between them character izuet linear acceleration value.

When linear acceleration occurs along the Z axis directed perpendicular to the plane of the semiconductor substrate 1, the inertial masses 42, 43 under the action of inertia begin to move perpendicular to the plane of the semiconductor substrate 1 synchronously, due to the bending of the elastic beams 44, 45, 46, 47, 52, 53 , 54, 55. Stresses generated on capacitive displacement transducers formed by electrodes 2, 3 and inertial masses 42, 43, respectively, due to a change in the gap between them, characterizes the magnitude of the linear acceleration Nia.

When applying to the stationary electrodes of electrostatic drives 12, 16, 17, 18, 22, 23 and 13, 14, 15, 19, 20, 21 alternating voltages, phase shifted 180 ° relative to each other, relative to the movable electrodes of electrostatic drives 24, 26 and 25, 27, an electrostatic interaction occurs between them, which leads to the appearance of antiphase vibrations of the latter in the plane of the semiconductor substrate 1 (along the X axis), due to the bending of the elastic beams 28, 29, 30, 31, 32, 33, 34, 35 connecting the movable electrodes 24, 25, 26, 27 with supports 36, 37, 38, 39, 40, 4L electrostatic actuators of the electrodes 24, 25, 26, 27 are passed through the inertial masses 42,43 elastic bars 44,45, 46,47.

When an angular velocity occurs along the Y axis located in the plane of the semiconductor substrate 1, the inertial masses 42, 43 under the action of the Coriolis inertia forces begin to oscillate perpendicular to the plane of the semiconductor substrate 1 in antiphase to each other, due to the bending of the elastic beams 44, 45, 46, 47 , 52, 53, 54, 55. The voltage difference generated by capacitive displacement transducers formed by electrodes 2, 3 and inertial masses 42, 43, respectively, due to a change in the gap between them, characterizes the value of lovoy speed.

When an angular velocity occurs along the Z axis, perpendicular to the plane of the semiconductor substrate 1, the inertial masses 42, 43 under the influence of the Coriolis inertia forces begin to oscillate in the plane of the semiconductor substrate 1, directed along the X axis in antiphase to each other, due to the bending of the elastic beams 44, 45, 46, 47. Oscillations of inertial masses 42, 43 through elastic beams 52, 53, 54, 55 are transmitted to the movable electrodes of capacitive displacement transducers 48, 49, 50, 51, which oscillate due to the bending of the “U” -shaped systems other beams 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71 connecting the movable electrodes of the capacitive displacement transducers 48, 49, 50, 51 with supports 72 , 73, 74, 75, 76, 77, 78, 79, 80, 81, 82. The voltage difference generated in the pairs of capacitive displacement transducers formed by the movable electrodes 48, 49, 50, 51 and the stationary electrodes 4, 5, 6, 7, 8, 9, 10, 11, respectively, due to a change in the gap between them, characterizes the magnitude of the angular velocity.

Supports 73, 74, 75, 76, 78, 79, 80, 81, 83, 84, 85, 86, 87, 88, 89, 90 serve as limiters of the movement of inertial masses 42, 43 in the plane of the semiconductor substrate 1.

Thus, the proposed device is an integrated micromechanical gyroscope-accelerometer, which allows to measure the angular velocity along the Y axes located in the plane of the substrate, and Z directed perpendicular to the plane of the substrate, and the linear acceleration along the axes Χ, Y, Z.

Introduction of four additional movable electrodes of capacitive displacement transducers made in the form of perforated plates with comb structures on both sides of semiconductor material and arranged with a gap relative to the substrate, eight additional stationary electrodes of capacitive displacement transducers made with comb structures on one side of semiconductor material and located directly on the substrate so that they form with additional movable electrode capacitive displacement transducers capacitors in the plane of their plates through the lateral gaps and interpenetrating each other comb electrodes, four additional movable electrodes of electrostatic drives, made in the form of plates with perforation with comb structures on both sides of a semiconductor material and located with a gap relative to the substrate, nine additional fixed electrodes of electrostatic drives made with comb structures on one side of the semiconductor nickel material and located directly on the substrate, so that they form an electrostatic interaction with the movable electrodes of the electrostatic drives in the plane of their plates through the lateral gaps and interpenetrating electrode combs, sixteen "P" -shaped systems of elastic beams made in the form of plates of semiconductor material and located with a gap relative to the substrate, and twenty-one additional supports made of semiconductor material and located directly On the substrate, two inertial masses are made with perforation, the substrate and the fixed electrodes of the capacitive displacement transducers are made of semiconductor material, which makes it possible to measure the angular velocity along the Y axes located in the substrate plane and Z directed perpendicular to the substrate plane, linear acceleration along the axes Χ, Y, Z, which allows the use of the invention as an integral measuring element of angular velocity and linear acceleration.

Thus, in comparison with similar devices, the proposed integrated micromechanical gyroscope-accelerometer allows to reduce the substrate area used for the placement of measuring elements of angular velocity and linear accelerations, since for measuring angular velocity along two Y axes located in the plane of the substrate, and Z, directed perpendicular to the plane of the substrate, and linear acceleration along the Χ, Υ, ос axes, only one integrated micromechanical sensor is used.

Claims (1)

An integrated micromechanical gyroscope-accelerometer containing a substrate with two electrodes of capacitive displacement transducers located on it, two inertial masses, elastic beams made of semiconductor material and located with a gap relative to the substrate, supports made of semiconductor material and located directly on the substrate, three stationary electrodes of electrostatic drives made with comb structures of semiconductor material and located on characterized in that four additional movable electrodes of capacitive displacement transducers are introduced into it, made in the form of perforated plates with comb structures on both sides of semiconductor material and arranged with a gap relative to the substrate, eight additional stationary capacitive displacement transducer electrodes made with comb structures on one side and located directly on the substrate so that they form with additional movable electrodes and capacitive transducers of displacements, capacitors in the plane of their plates through lateral gaps and combs of electrodes interpenetrating each other, four additional movable electrodes of electrostatic drives, made in the form of plates with perforation with comb structures on both sides of semiconductor material and located with a gap relative to the substrate, nine additional fixed electrodes of electrostatic drives, made with comb structures on one side of semiconductor material and located directly on the substrate so that they form an electrostatic interaction with the movable electrodes of the electrostatic drives in the plane of their plates through the side gaps and the electrode combs interpenetrating each other, sixteen "U" -shaped systems of elastic beams made in the form of semiconductor plates material and located with a gap relative to the substrate, and twenty-one additional support made of semiconductor material and located directly on the substrate, wherein the two inertia masses are made with perforation, and the substrate and stationary electrodes capacitive displacement transducers formed of semiconductor material.

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