RU2553828C1 - Light-emitting diode and method of making same - Google Patents

Abstract

FIELD: physics.

SUBSTANCE: light-emitting diode (LED) comprises a base, a light-emitting structure, a first electrode and a second electrode. An U-shaped electroconductive suspension for the light-emitting structure, which is transparent for the emitted light, is made on the base. The suspension lies on the base with one arm and is rigidly connected to the base. There is a series of elements rigidly connected to the arms between the arms in the direction from the base. The elements comprise an insulating layer, a first electrode, a layer which acts a mirror and a heatsink and a light-emitting structure. The LED is made as follows. A multilayer film element is formed on the base. The materials used are such that the layer geometry and intrinsic mechanical stress thereof enable to obtain a light-emitting structure and U-shaped suspension which is electroconductive and transparent for the emitted light. The step of forming the film element includes successively making a set of layers with intrinsic mechanical stress and a set of layers of the light-emitting structure. For the latter, two areas are formed, which are arranged with a gap with a depth to the last set of layers with intrinsic mechanical stress. Areas of the film element are obtained - an area which corresponds to the arm lying on the base, an area which corresponds to the arm connected to the light-emitting structure and an area corresponding to a loop. An insulating layer, on which the first electrode is made, is formed on the area of the film element which corresponds to the arm lying on the base. A layer which acts the mirror and heatsink is formed on the area of the film element which corresponds to the arm connected to the light-emitting structure. The film element is then partially separated from the base, leaving it connected on the area which corresponds to the arm lying on the base. The set of layers with intrinsic mechanical stress is transformed under the action of the intrinsic mechanical stress into U-shaped suspension with a loop and the obtained light-emitting structure between the arms. During separation, the set of layers of the light-emitting structure with the layer which acts as a mirror and a heatsink is turned over and the latter is brought into contact with the first electrode to form a rigid connection.

EFFECT: high efficiency of converting electrical energy into light energy and heat removal, reducing the dimensions of LEDs and integration with other optoelectronic devices on a single base.

21 cl, 6 dwg

Description

The invention relates to semiconductor devices and can be used in the development and manufacture of LEDs and various devices based on them.

Known LED (US patent No. 6794211 for invention, IPC: 7 H01L 33/00) containing a substrate, a light-emitting structure and a first electrode located on the working side of the substrate, a second electrode in contact with the substrate. The second electrode in contact with the substrate is made on its rear side. A buffer layer, a distributed Bragg reflector, a light-emitting structure as a part of the first and second cladding layers (bounding, cladding) with an active layer located between them, an intermediate layer of amorphous-like material, a window layer on which the first electrode is made, are successively made on the substrate: front electrode. The substrate is made of n-type GaAs GaAs, the first layer is made of n-type AlGaInP, the second layer is made of p-type AlGaInP, and the active layer between them is made of Al _x Ga _1-x InP. The active layer contains multiple quantum wells. The window layer is made of p-type GaP. The buffer layer is formed from n-type GaAs. The distributed Bragg reflector is based on AlAs / GaAs layers. An intermediate layer of amorphous-like material is formed with the possibility of preventing it from influencing the difference in the constant crystal lattices of the materials of the window layer and the second coating layer. In particular, it is formed from the same material as the window layer.

In the known technical solution, it is impossible to increase the efficiency of converting electrical energy into light and increase the efficiency of heat removal, and there is no possibility of reducing the size of LEDs and the possibility of integration with other optoelectronic devices on the same substrate.

The reasons that impede the achievement of the specified technical result include the following.

Firstly, the insufficient efficiency of distributed Bragg reflectors, since they reflect light only at a certain wavelength and only when it propagates near the normal to the plane of the reflector. The presence of light absorption in the substrate.

Secondly, the lack of design means to perform the function of heat removal from the active region.

Thirdly, the presence in the design of the upper frontal electrode, shading the emitting region. This is especially critical in the manufacture of small LEDs, up to 10 microns, since the size of the input contact is comparable to the size of the LED itself.

Fourthly, the construction itself is used with successively made layers on the substrate, lower and upper electrodes, between which there is a substrate with a sequence of layers. This impedes said integration.

For the closest analogue to the claimed device adopted LED (US patent No. 7199390 for the invention, IPC: 8 H01L 29/06) containing a substrate, a light-emitting structure and a first electrode located on the working side of the substrate, the second electrode in contact with the substrate. The second electrode in contact with the substrate is made on its rear side. A light-emitting structure is sequentially made on the substrate as a part of the first and second layer-cladding (limiting, cladding, cladding) with an active layer located between them, an intermediate layer, a window layer on which the first electrode is made - the front electrode. The substrate is made of n-type GaAs GaAs, the first layer is made of n-type AlGaInP, the second layer is made of p-type AlGaInP, and the active layer between them is made of Al _x Ga1-xInP. The active layer is made with multiple quantum wells. The intermediate layer is p-type from GaInP. The window layer is made of p-type GaP. The buffer layer is formed from n-type GaAs. Additionally, a distributed Bragg reflector based on Al _x Ga _1-x As / Al _y Ga _1-y As layers with compositions y, x equal to 0 to 1, with x ≠ y, can be made as part of the LED.

In the technical solution, taken as the closest analogue, it is impossible to increase the efficiency of converting electrical energy into light and increase the efficiency of heat removal, as well as there is no possibility of reducing the size of LEDs and the possibility of integration with other optoelectronic devices on the same substrate.

The reasons that impede the achievement of the specified technical result include the following.

Firstly, the presence of light absorption by the substrate in the absence of a distributed Bragg reflector in the structure. In the case of the latter, the insufficient efficiency of the distributed Bragg reflectors, since they reflect light only a certain wavelength and only when it propagates near the normal to the plane of the reflector. As a result, the effect of light absorption in the substrate is present and makes a negative contribution to the efficiency of the conversion of electrical energy into light.

Secondly, the lack of design means to perform the function of heat removal from the active region.

Thirdly, the presence in the design of the upper frontal electrode, shading the emitting region. This is especially critical in the manufacture of small LEDs, up to 10 microns, since the size of the input contact is comparable to the size of the LED itself.

Fourthly, the construction itself is used with successively made layers on the substrate, lower and upper electrodes, between which there is a substrate with a sequence of layers. This impedes said integration.

A known method of manufacturing an LED (US patent No. 6794211 for invention, IPC: 7 H01L 33/00), which consists in the fact that they provide a light-emitting structure, the first electrode located on the working side of the substrate, form a second electrode in contact with the substrate. A buffer layer, a distributed Bragg reflector, a light-emitting structure in the composition of the first and second coating layers with an active layer located between them, an intermediate layer of an amorphous-like material, a window layer on which the first electrode is made — the front electrode, and the second electrode — are successively formed on the substrate. in contact with the substrate - from the rear side of the substrate.

In the method, a distributed Bragg reflector is formed, first and second coating layers with an active layer located between them, an intermediate layer of amorphous-like material, a window layer by gas-phase epitaxy from organometallic compounds.

As the substrate, an n-type GaAs substrate is used. The buffer layer is made of n-type GaAs. A distributed Bragg reflector containing alternating AlAs / GaAs layers is formed on the buffer layer. Next, the first layer-lining of n-type conductivity from AlGaInP, the active layer of Al _x Ga _1-x InP, the second layer-lining of AlGaInP p-type conductivity are sequentially performed. The thickness of the substrate is from 250 to 350 microns. The listed layers are precipitated by gas-phase epitaxy from organometallic compounds with the possibility of precise control of gas flows. The composition and thickness of the layers is controlled with high accuracy. The total thickness of the first coating layer, the active layer and the second coating layer is from 0.5 to 1 μm. To obtain the n-type conductivity, silicon is doped, and for the p-type conductivity, zinc or magnesium. The active layer is formed with multiple quantum wells. The coating layers and the active layer are formed at a temperature of from 800 to 830 ° C.

Next, an intermediate layer of amorphous material is formed on the second cladding layer with the possibility of preventing it from influencing the difference of the constant crystal lattices of the materials of the window layer and the second cladding layer. A window layer is deposited on an intermediate layer of amorphous material. These layers are also formed by gas-phase epitaxy from organometallic compounds. The intermediate layer is precipitated at a temperature of from 400 to 700 ° C, which is lower with respect to the deposition temperature of other layers. In the process of gas-phase epitaxy from organometallic compounds, a sharp drop in the growth temperature is initiated, which causes a decrease in the activation energy of atoms during the growth of p-GaP, thus “freezing” the atoms, as a result, the intermediate layer grows in an amorphous state. The intermediate and window layers of GaP are grown in a single process, under the same conditions, with the exception of the growth temperature.

The window layer is preferably grown thicker. The thickness of the intermediate layer is preferably from 0.01 to 0.5 microns. The total thickness of the window and intermediate layers is from 5 to 15 microns.

When manufacturing a LED in a known manner, it is impossible to increase the efficiency of converting electrical energy into light and increase the efficiency of heat removal, and there is no possibility of reducing the size of the LEDs and the possibility of integration with other optoelectronic devices on the same substrate.

The reasons that impede the achievement of the specified technical result include the following.

Firstly, the insufficient efficiency of the distributed Bragg reflector formed during the manufacturing of the LED, since it reflects light only at a certain wavelength and only when it propagates near the normal to the plane of the reflector. The presence of light absorption in the substrate.

Secondly, the method does not provide for the manufacture of means for performing the function of heat removal from the active region.

Thirdly, the implementation in the manufacture of the LEDs of the upper frontal electrode, shading the emitting region. This is especially critical in the manufacture of small LEDs, up to 10 microns, since the size of the input contact is comparable to the size of the LED itself.

Fourth, the design used in the manufacture of an LED with sequentially made layers on a substrate, lower and upper electrodes, between which there is a substrate with a sequence of layers. The use of this design in the manufacture of LEDs hinders the implementation of this integration.

As the closest analogue to the claimed method, a method for manufacturing an LED is adopted (US patent No. 7683378 for an invention, IPC: 8 H01L 33/00), which consists in obtaining a light-emitting structure, the first electrode located on the working side of the substrate, form a second electrode in contact with the substrate. A distributed Bragg reflector, the first and second coating layers with the active layer located between them, the current-scattering layer on which the first electrode is made — the front electrode, and the second electrode that contacts the substrate — are formed sequentially on the back side of the substrate.

In the method, a distributed Bragg reflector is formed, the first and second coating layers with the active layer located between them, the current-scattering layer by gas-phase epitaxy from organometallic compounds.

As the substrate, an n-type GaAs substrate is used. The distributed n-type Bragg reflector is made up of 20 pairs of an AlGaAs n-type conductivity layer 30.7 nm thick with a carrier concentration of 1 × 10 ¹⁸ cm ^-3 and an AlInP n-type conductivity layer 71.2 nm thick with a carrier concentration of 1 × 10 ¹⁸ cm ^-3 . Next, the first layer-lining of the n-type conductivity is made of AlGaInP 0.5 μm thick with a carrier concentration of 1 × 10 ¹⁸ cm ^-3 , the active layer of undoped Al _x Ga _1-x InP is 0.5 μm thick, the second layer-lining from AlGaInP p-type conductivity 0.5 μm thick with a carrier concentration of 5 × 10 ¹⁷ cm ^-3 . In the final, a p-type AlGaInP current-diffusing layer of conductivity of 5 μm thickness with a carrier concentration of 1 × 10 ¹⁸ cm ^{-3 is formed} .

The specific composition of the AlGaAs layer of the distributed n-type Bragg reflector is Al _x Ga _1-x As with x 0 <x <0.6. The thickness of the reflector layers AlGaAs and AlInP is chosen in accordance with the expressions: t ₁ = {λ ₀ / (4 × n ₁ )} × α, t ₂ = {λ ₀ / (4 × n ₂ )} × (2-α), 0.5 <α <0.9, where t ₁ is the thickness of the AlGaAs layer, t _{2 is the} thickness of the AlInP layer, λ ₀ is the wavelength, n _{1 is the} AlGaAs refractive index, n _{2 is the} AlInP refractive index.

In the manufacture of the LED according to the known method, it is impossible to increase its efficiency of converting electric energy into light and increase the efficiency of heat removal, as well as during its manufacture there is no possibility of reducing the size of the LEDs and the possibility of integration with other optoelectronic devices on the same substrate.

The reasons that impede the achievement of the specified technical result include the following.

Firstly, the insufficient efficiency of the distributed Bragg reflector formed during the manufacturing of the LED, since it reflects light only at a certain wavelength and only when it propagates near the normal to the plane of the reflector. As a result, the effect of light absorption in the substrate is manifested.

Secondly, the method does not provide for the manufacture of means for performing the function of heat removal from the active region.

Thirdly, the implementation in the manufacture of the LEDs of the upper frontal electrode, shading the emitting region. This is especially critical in the manufacture of small LEDs, up to 10 microns, since the size of the input contact is comparable to the size of the LED itself.

Fourth, the design used in the manufacture of an LED with sequentially made layers on a substrate, lower and upper electrodes, between which there is a substrate with a sequence of layers. The use of this design in the manufacture of LEDs hinders the implementation of this integration.

The technical result of the proposed solution is:

- improving the efficiency of converting electrical energy into light;

- increase the efficiency of heat removal;

- achieving the possibility of reducing the size of LEDs;

- achieving the possibility of integration with other optoelectronic devices on the same substrate.

The technical result is achieved in an LED containing a substrate, a light-emitting structure and a first electrode located on the working side of the substrate, a second electrode in contact with the substrate, while on the working side of the substrate is made an electrically conductive U-shaped suspension for the light-emitting structure lying on the substrate with one branch and rigidly connected with it, between the branches in the direction from the substrate, a sequence of elements rigidly connected with the branches is formed, formed from a rigidly bonded insulating layer, a first electrode, a layer acting as a mirror and a heat sink, and a light-emitting structure.

In the LED, the U-shaped suspension for the light-emitting structure is made on the basis of a layered ensemble with built-in mechanical stresses, a branch lying on the substrate is formed by a section of a layered ensemble with built-in mechanical stresses that is in a flat state due to communication from the working side of the substrate with the substrate, on the other hand - with an insulating layer located between the branches and the first electrode, the other branch is formed by a section of a layer ensemble with built-in mechanical stresses located in due to the connection with the light-emitting structure located between the branches and the layer that acts as a mirror and heat sink, and the loop connecting the branches, made electrically conductive, is formed by bending under the influence of built-in mechanical stresses a section of a layered ensemble with built-in mechanical stresses, free from connections with elements holding it in a flat state, the first electrode is made in the form of a contact layer, the second electrode in contact with the substrate is made from the rear Rhone substrate.

In the LED between the insulating layer and the branch of the U-shaped suspension, lying on the substrate, formed by a section of the layer ensemble with built-in mechanical stresses that are in a flat state due to bonds with the substrate, the insulating layer and the first electrode, an ensemble of layers of a light-emitting structure is made, the light-emitting structure is made based on an ensemble of layers of a light-emitting structure, suspended on a loop with an adjoining layer that acts as a mirror and heat sink, which is equipped with a light-emitting structure, to the contact layer with the possibility of implementing rigid mechanical and electrical connections.

In the light-emitting diode as a part of the light-emitting structure, the first and second layer-wafers, respectively, of the first and second type of conductivity and the active layer located between them, undoped, are made, and the second layer-wafer is made adjacent to the layer that acts as a mirror and heat sink.

In the LED, the ensemble of layers of the light-emitting structure is made up of the first and second layer-layers, respectively, of the first and second type of conductivity with the active layer located between them, undoped.

In the LED, the substrate is made of GaAs p ⁺ or n ⁺ -type conductivity.

In the LED between the substrate and the branch lying on the substrate, formed by a section of the layer ensemble with built-in mechanical stresses that are in a planar state due to bonds with the substrate, the insulating layer and the first electrode, a sacrificial layer of AlAs p ⁺ or n ⁺ -type conductivity is made, providing hard bond to the substrate.

In the LED, an electrically conductive U-shaped suspension for the light-emitting structure transparent to the emitted light is made on the basis of a layer ensemble with built-in mechanical stresses, namely, it is made up of a mechanically stressed layer of InGaAs p ⁺ or n ⁺ -type conductivity and the associated layer of GaAs p ⁺ or n ⁺ -type conductivity, and a loop made electrically conductive, metallized with layers of AuGe / Ni / Au thickness, respectively, 40/20/200 nm or layers of Zn / Au thickness, respectively, 20/200 nm.

In the light guide, the first layer-cladding of the first conductivity type is made of AlGaInP or AlGaInAs p or n-type conductivity, the active layer is made of undoped AlGaInP or AlGaInAs, and the second layer-cladding of the second conductivity type is made of AlGaInP or AlGaInAs n or p-type conductivity.

In the LED between the ensemble of layers of the light-emitting structure and the insulating layer, between the light-emitting structure and the layer acting as a mirror and heat sink, a protective layer of GaAs p ⁺ conductivity type is made.

In the LED, the insulating layer is made of SiO ₂ or Si ₃ N ₄ with a thickness of about 0.2 μm. In the LED, the first electrode is made in the form of a contact layer in the composition of Ti / Au layers with a thickness of 40/200 nm, respectively, the second electrode in contact with the substrate is made in the composition of AuGe / Ni / Au layers with a thickness of 40/20/200 nm, respectively or Zn / Au layers, respectively, 20/200 nm thick.

In an LED, a layer acting as a mirror and a heat sink is formed as a part of Ag / Au layers with a thickness of 20/200 nm, respectively.

The technical result is achieved in the method of manufacturing the LED, which consists in obtaining a light-emitting structure, the first electrode located on the working side of the substrate, form a second electrode in contact with the substrate, in the method, first, a multilayer film element connected to the substrate is formed with using materials, the geometry of its layers and built-in mechanical stresses, providing a light-emitting structure and an electrically conductive, transparent of a U-shaped suspension for the emitted light for the light-emitting structure lying on the substrate with one branch and rigidly connected to the substrate and the other branch connected with the light-emitting structure with hanging on the loop, while in the stage of formation of the film element a layer ensemble with built-in mechanical voltages, an ensemble of layers of a light-emitting structure, with respect to the latter, two sections are formed, located relative to each other with a gap depth to a layer ensemble with built-in mechanical stresses, thereby obtaining portions of the film element — corresponding to the branch lying on the substrate, corresponding to the branch associated with the light-emitting structure, and corresponding to a loop, on the portion of the film element corresponding to the branch lying on the substrate, the portion of the ensemble of layers of the light-emitting structure is covered with an insulating layer, which produce the first electrode, in the area of the film element corresponding to the branches associated with the light-emitting structure containing the second section an ensemble of layers of a light-emitting structure, a layer is provided that functions as a mirror and a heat sink, then the film element is partially separated from the substrate, leaving it connected in the portion of the film element corresponding to the branch lying on the substrate, on which the portion of the ensemble of layers of the light-emitting structure, covered with an insulating layer made the first electrode on it, transforming under the action of built-in mechanical stresses a layered ensemble with built-in mechanical stresses into a U-shaped ec with a noose and location obtained of the light emitting structure from the ensemble of layers of the light emitting structure between the branches, by separating the film member from the substrate, coup ensemble layers emitting with a layer structure, performing the mirror and the heat sink function, and placing the latter in contact with the first electrode to form a rigid connection.

In the method, at the stage of forming a film element, before producing a layer ensemble with built-in mechanical stresses, a AlAs sacrificial layer from 10 to 30 nm thick is made on a substrate, a GaAs substrate is used as a substrate, the film element is separated from the substrate by selective side etching of the sacrificial layer from the site side a film element corresponding to a branch associated with a light-emitting structure.

In the method, at the stage of formation of the film element, a layer ensemble with built-in mechanical stresses is produced, which provides an electrically conductive, transparent for the emitted light, U-shaped suspension for the light-emitting structure, consisting of a mechanically stressed layer of InGaAs p ⁺ type conductivity and the associated GaAs layer p ⁺ -type of conductivity, and the ensemble of layers of the light-emitting structure is made up of the first and second layers-plates with an active layer located between them, the first layer is The fabric is made of AlGaInP or AlGaInAs of the first type of conductivity - p-type, the active layer is made of undoped AlGaInP or AlGaInAs, respectively, or the active layer is made of InGaP or GaAs quantum wells, respectively, and the second layer is made of AlGaInP, respectively or AlGaInAs of the second type of conductivity - n ⁺ -type, while the first layer-lining is placed on a layer of GaAs p ⁺ -type of conductivity of a layer ensemble with built-in mechanical stresses, the second layer-lining is provided with a protective layer of GaAs n ⁺ -type of conductivity which in Perform an insulating layer and a layer that acts as a mirror and heat sink.

In the method, at the stage of forming the film element with the manufacture of the ensemble of layers of the light-emitting structure and in relation to the latter, the formation of two sections located relative to each other with a gap to the depth of the layer ensemble with built-in mechanical stresses, thereby obtaining sections of the film element - the corresponding branch lying on the substrate, the corresponding branch associated with the light-emitting structure, and the corresponding loop, coated on a portion of the film element corresponding to lying on the substrate of the branch of the section of the ensemble of layers of the light-emitting structure with an insulating layer on which the first electrode is made, with the production of a film element on the section corresponding to the branch associated with the light-emitting structure containing the second section of the ensemble of layers of the light-emitting structure, a layer acting as a mirror and heat sink, the thickness of the film element is set from 6 × 10 ^-8 m - in the area of the film element corresponding to the loop, up to 10 ^-5 m - in the area of the film element corresponding to lying on the substrate e branches, patterns of layers of the film element are formed lithographically, after the ensemble of layers of the light-emitting structure is manufactured using lithography, an insulating layer is made on the area of the film element section corresponding to the branches lying on the substrate, then a gap is made and the indicated sections are obtained by lithography and etching the window to a layer depth ensemble with built-in mechanical stresses, with reaching the distance between sections equal to πR, where R is the radius of curvature of the loop, or another distance, which further ensures the arrangement of the light-emitting structure with the layer acting as a mirror and heat sink in contact with the first electrode, which is obtained on the insulating layer by applying a contact layer of metal using lithography, a layer is made that acts as a mirror and heat sink, also of metal, using lithography, in addition, after performing the gap and obtaining the indicated areas by lithography and etching the window to a depth of a layer ensemble with built-in mechanical yazheniyami, the latter additionally metallized by sputtering in the metal box, using lithography.

In the method, the insulating layer is made of SiO ₂ with a thickness of about 0.2 μm.

In the method, a layer acting as a mirror and a heat sink is made up of 20/200 nm thick Ag / Au layers, respectively.

In the method, a layered ensemble with built-in mechanical stresses in the area corresponding to the loop is additionally metallized by spraying metal into the windows using lithography with AuGe / Ni / Au layers 40/20/200 nm thick, respectively, or Zn / Au layers thick respectively, 20/200 nm.

In the method, the first electrode is made in the form of a contact layer in the composition of Ti / Au layers with a thickness of 40/200 nm, respectively, the second electrode in contact with the substrate is made from the rear side of the substrate in the composition of layers of AuGe / Ni / Au with a thickness of 40 / 20/200 nm or Zn / Au layers with a thickness of 20/200 nm, respectively.

The essence of the technical solutions is illustrated by the following description and the accompanying drawings.

Figure 1 illustrates the absorption of the light generated by the active layer in the absence of a mirror and its presence - a distributed Bragg reflector.

Figure 2 illustrates the shading of the upper front electrode of the emitting region.

Figure 3 schematically shows a roll-up due to the action of built-in mechanical stresses of a pseudomorphic heterofilm from two forming layers when it is released from communication with the substrate.

Figure 4 (a), (b), (c), (d) presents photographs showing the capabilities of the micro-origami method, which allows you to create arrays of micromechanical components located at various predetermined angles to the substrate.

Figure 5 schematically shows the sequence of the main technological stages of manufacturing an LED: a) the formation of a multilayer film element - the stage of readiness of the epitaxially formed heterostructure of the LED as a substrate, a layer ensemble with built-in mechanical stresses, an ensemble of layers of a light-emitting structure and lithography with the application of an insulating layer of a dielectric ; b) forming, with respect to the ensemble of layers of the light-emitting structure, two sections located relative to each other with a gap depth to the layer ensemble with built-in mechanical stresses, obtaining sections of the film element — the corresponding branch lying on the substrate, the corresponding branch associated with the light-emitting structure, and the corresponding loop, coated on the portion of the film element corresponding to the branch lying on the substrate of the portion of the ensemble of layers of the light-emitting structure with an insulating layer the manufacture of the first electrode in the form of a contact layer of metal, with the formation on the portion of the film element corresponding to the branch associated with the light-emitting structure, a layer that acts as a mirror and heat sink, and with additional metallization in the portion corresponding to the loop, a layer ensemble with built-in mechanical stresses by lithography, etching of meso structures and deposition of layers; c) the stage of obtaining a hybrid microstructure of the LED by selective etching of the sacrificial layer with separation of the meso structure from the substrate as part of the film element sections corresponding to the branch associated with the light-emitting structure and the corresponding loop pseudomorphic heterofilm from layers with built-in mechanical stresses (layer ensemble with built-in mechanical stresses), lining layers with an active layer located between them, a protective layer (an ensemble of layers of light-emitting st lining) and a metal layer that acts as a mirror and heat sink, in the area of the film element corresponding to the branch associated with the light-emitting structure, and also separated from the substrate with a loop forming a pseudomorphic heterofilm from layers with built-in mechanical stresses in the area of the film element corresponding to the loop, which can be coated with a metal layer leading to a flip of the indicated meso-structure in relation to the portion of the film element corresponding to the branch associated with the light-emitting 180 ° structure and the location of the layer acting as a mirror and heat sink from the metal between the substrate and the active layer, in which the specified metal layer lies on a sequence of layers formed on the substrate from the sacrificial layer, layers with built-in mechanical stresses (layer ensemble with built-in mechanical stresses) of a pseudomorphic heterofilm forming a loop, layer layers with an active layer located between them, a protective layer (an ensemble of layers of a light-emitting structure), an insulating layer on which a metal contact layer is applied (the first electrode), which contacts as a result of a meso-structure revolution with a layer that acts as a mirror and heat sink, where 1 is a substrate, 2 is a sacrificial layer, 3 is a mechanically stressed layer forming a loop, 4 - loop-forming layer, 5 - layer-lining of the first type of conductivity, 6 - active layer, undoped, 7 - layer-lining of the second type of conductivity, 8 - protective layer, 9 - insulating layer, 10 - layer that acts as a mirror and heat sink 11 is a layer metallizing the loop; 12 is a contact layer.

Figure 6 presents a photographic image of the hybrid microstructure of the LED containing metal layers located between the semiconductor epitaxial layers due to a loop made of a layer ensemble with built-in mechanical stresses, freed from communication with the substrate, as a result of the action of built-in mechanical stresses when releasing them from communication with a substrate leading to bending and looping.

The development of a group of technical solutions is aimed at creating high-performance LEDs with small lateral sizes (from 1 μm to 100 μm) suitable for integration with other electronic devices on a single chip and for use in high-resolution light-emitting matrices, and nanodiodes with quantum dots in the active layer, and also manufacturing techniques of the above devices.

The first commercial LED appeared more than 50 years ago. Since then, the characteristics of LEDs have constantly improved, in particular, acceleration of progress has been observed in the last two decades. To date, LEDs have been developed that emit light of a wavelength of the entire visible range, from blue to red, success in the development of LEDs has reached an impressive level in terms of radiated power and the efficiency of converting electrical energy into light.

The efficiency of the LED is the product of the internal quantum efficiency (the number of photons generated by each electron passing through the active layer of the LED) and the light extraction efficiency (the ratio of the number of photons leaving the device to their total number). Internal quantum efficiency is determined by the quality of the semiconductor materials used and the design of the active region and can exceed 99% (I.Schnitzer, E. Yablonovitch, C. Caneau, TJ Gmitter, Ultrahigh spontaneous emission quantum efficiency, 99.7% internallyand 72% externally, from AlGaAs / GaAs / AlGaAs double heterostructures, Appl. Phys. Lett. 62 (2) 131 (1992)). The extraction efficiency is limited by the absorption of part of the light by the substrate, as well as the reflection of photons from the semiconductor / air interface and their subsequent absorption in the active region or substrate. The high refractive index of semiconductors (n = 3.54 for GaAs) leads to the fact that only a small part, about 2%, of the photons can leave the semiconductor. A number of measures have been proposed to increase the efficiency of light extraction (K. Streubel, N. binder, R. Wirth, A. Jaeger, High brightness AlGaInP Light-Emitting Diodes, IEEE J Select. Topics Quantum Electron. 8 (2) 321 (2002) ): (1) the use of distributed Bragg reflectors between the substrate and the active region; (2) the use of a transparent substrate; (3) transferring the active region to a metal reflective surface; (4) creating a relief on the surface of a semiconductor. The LEDs created using these technologies, the so-called high-brightness LEDs, are already widely used in light displays, traffic lights, car signal lights, for illuminating liquid crystal displays of mobile devices (M. Holcomb, P. Grillot, G. Hfler , M. Krames, S. Stockman, AlGaInP LEDs break performance barriers, Compound Semiconductor, Aplil, 2001). Total sales of high-brightness LEDs in 2000 exceeded $ 1 billion (T. Whitaker, Lighting the future with LEDs, Compound Semiconductor, Aplil, 2001). Nevertheless, the problem of creating bright micro-LEDs of high-performance small-size LEDs (1 μm - 100 μm) suitable for integration with other electronic devices on a single chip and use in high-resolution light-emitting matrices (100-1000 dpi) remains unresolved. Such LEDs are required to create high-resolution color displays, displays of mobile devices, LED printers.

The implementation of these LEDs by the developers of the world is primarily aimed at eliminating such disadvantages of LEDs as absorption of the generated light by the active layer (see Figure 1), shading by the upper contact of the emitting region of the LED (see Figure 2).

In addition, at present, a number of laboratories in the world are working on the creation of single-photon emitters based on quantum dots - nanodiodes, each of which contains one quantum dot in the active layer. To create such devices, it is necessary to solve the problem of scaling LEDs to nanoscale while maintaining sufficiently high efficiency (A. Fiore, JX Chenand, M. Ilegems, Scaling quantum-dot light-emitting diodes to submicrometer sizes, Appl. Phys. Lett. 81 (10) 1756 (2002)).

The proposed approach in these technical solutions to the elimination of disadvantages looks promising, first of all, from the point of view of scaling while maintaining high efficiency.

The achievement of the technical result is based on the following.

The proposed group of technical solutions implemented the idea of placing a metal reflective coating between the radiation-generating epitaxial active layer of the LED and the substrate on which this active layer was originally grown. It is impossible to create such a structure directly in the process of epitaxial growth (it is impossible to grow single-crystal semiconductor layers on top of a gold or silver film, usually used as a mirror). Therefore, in this development, it is proposed to locally separate from the substrate an epitaxial active layer with a metal coating deposited on it and invert it using built-in mechanical stresses, placing it relative to the substrate in such a way that between the active layer and the substrate a metal reflective coating is formed - a layer that performs the function mirrors and heat sink.

The implementation is based on the concept of three-dimensional micro- and nanostructuring using built-in voltages (V. Ya. Prinz, VA Seleznev, A.K. Gutakovsky, AV Chehovskiy, VV Preobrazenskii, MA Putyato, TA Gavrilova. Free standing and overgrown InGaAs / GaAs nanotubes , nanohelical and their arrays. Physica E, 2000, v.6, N 1-4, pp828-831), which is shown schematically in FIG. 3 by the example of a pseudomorphic heterofilm consisting of a GaAs layer and an InGaAs layer grown by the molecular beam method epitaxy on a GaAs substrate.

A strained two-layer film of materials, in particular, InGaAs and GaAs, with different lattice constants, when it is released from the bond with the substrate, it bends and rolls under the action of internal mechanical stresses (Figure 3). The InGaAs lattice constant exceeds the GaAs lattice constant (Δa / a≤7%). The InGaAs layer is compressed in the initial state. The elastic forces F ₁ and F ₂ in the compressed layer located on the sacrificial layer and the layer located on the compressed layer are directed in opposite directions and create a moment of forces M, tending to bend the film. Until the sacrificial layer is etched, the film is rigidly bonded to the substrate by the sacrificial layer and held flat. With directional side etching of the sacrificial layer, the film begins to separate from the substrate. Under the action of the moment of elastic deformation forces, the film bends, acquiring a curvilinear shape corresponding to the minimum energy of internal stresses. The radius of curvature of the bend depends on the thickness of the film and the magnitude of the mechanical stresses in it. It can be set with precision accuracy, since it is determined by the relative mismatch of the periods of the crystal lattices of the materials that are chosen for the formation of the layers, and the thicknesses of the latter. By growing initial structures on the substrate with different thicknesses of epitaxial layers and compositions of solid solutions, it is possible to very accurately obtain the required value of the radius of curvature. The thickness during epitaxial growth is specified accurate to monoatomic layers. In the simplest case of a two-layer heterofilm with layer thicknesses d ₁ and d ₂ , mismatch of the lattice parameters of the layers Δa / a and Poisson's ratio ν, the radius of curvature R is determined by the formula (M. Grundmann, Appl. Phys. Lett. 83, 2444 (2003)):

.

.

Thus, the local curvature of the formed shell, in particular the roll, of the loop is determined by the layers present in its composition, curved due to the action of elastic stresses.

The same concept was used in the micro-origami method of microstructuring (P. Vaccaro, K. Kubota, T. Aida, Appl. Phys. Lett. 78 (2001) 2852). In it, free strained heterofilms are used to suspend parts of micromechanical devices separated from the substrate. "Micro-origami" allows you to create arrays of micromechanical components located at various predetermined angles to the substrate (A. Vorob'ev, PO Vaccaro, K. Kubota, S. Saravanan, T. Aida, Jpn. J. Appl. Phys 42, Part 1 (6B) 4024 (2003)), including at an angle of 180 °, that is, completely inverted (Figure 4).

The proposed technical solutions use internal mechanical stresses in a multilayer epitaxial film to flip its desired sections 180 ° (see Figure 5 - Figure 6) with the possibility of obtaining a LED design in which a pre-deposited metal film is placed between the substrate 1 and the active layer 6 and plays the role of a mirror, while also performing the function of heat removal from the active region (layer, which performs the function of mirror and heat removal, 10). A metal reflective coating that cannot be grown in a single process of forming all the epitaxial layers of the LED structure is thus placed between the epitaxial active layer 6 of the LED and the substrate 1 on which this active layer was originally grown.

The advantages of this design are as follows:

(1) high efficiency of converting electric energy into light, since a metal mirror prevents the substrate from absorbing emitted light (distributed Bragg reflectors are less effective for this purpose, since they reflect light only of a certain wavelength and only when it propagates near the normal to the plane of the reflector) (see Fig. 1);

(2) the absence of an upper metal electrode that obscures part of the emitting region (see Figure 2) (this is especially valuable for small-sized LEDs (<10 μm), when the size of the input contact is comparable to the size of the diode itself);

(3) effective removal of heat from the active region due to its proximity to the metal coating;

(4) high-temperature (600-750 ° C) bonding (direct splicing of wafers) used in methods for creating bright LEDs is not required (after all, high-temperature processes degrade the quality of interfaces and erode the doping profile of the active region, which degrades the characteristics of the devices);

(5) the ability to integrate with other optoelectronic devices on the same substrate.

The described approach to creating highly efficient LEDs using micromechanics is new and has no analogues.

The described approach with the achievement of the specified technical result is implemented in the following LED design (see Fig. 5c).

The LED, like well-known technical solutions, contains a substrate 1, a light-emitting structure and a first electrode (contact layer 12) located on the working side of the substrate 1, a second electrode in contact with the substrate. New in design is the implementation on the working side of the substrate of an electrically conductive, transparent to the emitted light, U-shaped suspension for the light-emitting structure. This element is one of the most important structural elements, since it provides the positioning of the light-emitting structure (active layer) and the metal layer, which acts as a mirror and performs heat removal, required for achieving a technical result, relative to other structural elements. It is made transparent to the emitted light in order to freely output the generated radiation, it is also electrically conductive to create an electric circuit, which includes a light-emitting structure and which is characteristic of a traditional design. In this case, the U-shaped suspension lies on the substrate 1 with one branch and is rigidly connected with it. Between the branches of the U-shaped suspension in the direction from the substrate 1, a sequence of elements rigidly connected with the branches is made. A rigidly connected insulating layer 9, a first electrode (contact layer 12), a layer acting as a mirror and a heat sink, 10 a light-emitting structure (protective layer 8, a cladding layer of the second type of conductivity 7, for example, p-type conductivity, are formed in it layer undoped 6, the lining layer of the first type of conductivity 5, for example, n-type conductivity in the direction from the substrate 1) (see Fig. 5c). The insulating layer 9 prevents the occurrence of an electric circuit bypassing the light-emitting structure, isolating the first electrode (contact layer 12) from the conductive layers made on the substrate.

The described approach with the achievement of the specified technical result is implemented in the above LED design (see Fig. 5c)) by manufacturing it as follows (see Fig. 5a) -c)).

In the manufacturing method of the LED, as well as in the known technical solutions, a light-emitting structure is obtained (layer-cladding of the first conductivity type 5, active layer, undoped 6, layer-cladding of the second conductivity type 7), the first electrode (contact layer 12) located from the working side of the substrate 1, form a second electrode in contact with the substrate 1 (not shown). Moreover, the implementation of these actions with the receipt of these elements is carried out by known means. New in the method is the following.

In the manufacture, first, from the working side of the substrate 1, a multilayer film element connected to the substrate is formed. In this case, materials, the geometry of the layers of the film element and built-in mechanical stresses are used to provide a light-emitting structure and an electrically conductive U-shaped suspension transparent to the emitted light for the light-emitting structure lying on the substrate with one branch and rigidly connected to the substrate 1 and the other branch connected with light emitting structure with hanging on a loop. The formation of the film element is carried out using traditional materials and methods of planar manufacturing technology of semiconductor devices.

At the stage of formation of the film element, a sequentially layered ensemble with built-in mechanical stresses and an ensemble of layers of a light-emitting structure are produced. In relation to the latter, two sections are formed, located relative to each other with a gap depth to a layer ensemble with built-in mechanical stresses. Thus, as a result, sections of the film element are obtained: corresponding to the branch lying on the substrate; the corresponding branch associated with the light-emitting structure; corresponding to the loop. In the portion of the film element corresponding to the branch lying on the substrate, the portion of the ensemble of layers of the light-emitting structure is covered with an insulating layer 9 on which the first electrode is made. On the portion of the film element corresponding to the branch associated with the light-emitting structure, on which the second portion of the ensemble of layers of the light-emitting structure is made, a layer 10 is made that acts as a mirror and heat sink. Then, the film element is partially separated from the substrate 1, leaving it connected in the region of the film element corresponding to the branch lying on the substrate, on which the section of the ensemble of layers of the light-emitting structure is made, covered with an insulating layer 9 with the first electrode made on it. When the film element is partially separated by the built-in mechanical stresses present in it, the layered ensemble with built-in mechanical stresses is transformed into a U-shaped suspension with a loop and the arrangement of the resulting light-emitting structure from the ensemble of layers of the light-emitting structure between the branches. In this case, by separating the film element from the substrate 1, flipping the ensemble of layers of the light-emitting structure with the layer 10 acting as a mirror and heat sink, the latter is placed in contact with the first electrode (contact layer 12) with the formation of a rigid bond.

The initial object in the formation of the multilayer film element is a solid multilayer film or a heterostructure composed of a layer ensemble with built-in mechanical stresses and an ensemble of layers of a light-emitting structure obtained on a solid substrate 1. In addition, a solid multilayer film or a heterostructure as a part can be used a layer ensemble with built-in mechanical stresses and an ensemble of layers of a light-emitting structure with an insulating layer formed on it layer 9, either a solid multilayer film or heterostructure is used as part of a layer ensemble with built-in mechanical stresses and an ensemble of layers of a light-emitting structure with an insulating layer 9 formed on it, on which a contact layer 12 (first electrode) is obtained, or a solid multilayer film or heterostructure is used as a part of a layer ensemble with built-in mechanical stresses and an ensemble of layers of a light-emitting structure, on which a layer 10 is obtained, which acts as a mirror and heat water. In the general case, a combination of layers of a semiconductor material, metal, and dielectric is performed as part of a heterostructure. A multilayer film or heterostructure as a part of a layer ensemble with built-in mechanical stresses and an ensemble of layers of a light-emitting structure can be deposited on solid substrate 1 by molecular beam epitaxy, deposition from a liquid or gas phase. The initial object must satisfy the following conditions: firstly, it must provide the possibility of the process of radiation generation; secondly, there should be the possibility of local separation from the substrate; thirdly, there must be built-in mechanical stresses, under the influence of which, when a multilayer film element is separated from the substrate, a U-shaped suspension with a loop for a light-emitting structure is formed by bending; fourthly, the possibility of a closed electrical circuit with the inclusion of a light-emitting structure into it with the application of an operating voltage to it and the unhindered output of the generated radiation should be achieved.

The manufacture of a multilayer film element is carried out using materials, geometry and internal mechanical stresses of the layers, which provide a light-emitting structure and an electrically conductive U-shaped suspension that is transparent to emitted light for a light-emitting structure with the latter located between the branches of the suspension, using the currently available arsenal of planar technology . Among the methods of planar technology, such as epitaxy, electrochemical deposition, vacuum deposition, and other methods of producing layers are used. The methods make it possible to obtain the required layers, ensure uniformity of the thickness of each layer and uniformity of mechanical stresses across the layer. Separating the film element from the substrate, its sections are stacked on top of each other, the film element section corresponding to the branch associated with the light-emitting structure and the layer acting as a mirror and heat sink, 10, is laid with its revolution on the film element section corresponding to the branch lying on the substrate on which a section of the ensemble of layers of the light-emitting structure is made, covered with an insulating layer 9 with the first electrode made on it, the layer ensemble with built-in mechanical stresses under the action of the latter in a U-shaped suspension with a loop, the curvature of which can be varied over a wide range. The specific value of the curvature of the loop - shell, which provides the required spatial arrangement of the light-emitting structure, is set with high accuracy by choosing the internal stresses of the layers of the layer ensemble with built-in mechanical stresses, their thicknesses and mechanical properties.

The manufacturing method allows the use of a wide range of materials for layers with a precise selection of their thicknesses and stresses, as well as to realize the desired geometry of all elements, including the exact spatial configuration. The first stage of the method consists in forming a film element, the contours of which are set lithographically, while on the substrate one or more individual film elements can be formed in a flat state if it is necessary to fabricate an array of LEDs. During the formation, the shape of the film element is determined, the area where it begins to separate from the substrate and subsequent folding, the direction of folding. Any type of lithography is used - optical, electronic, stamped - to apply a protective mask of the desired shape to the surface of the original object - the original heterofilm and subsequent local removal of the film by etching (liquid, ion or other) to obtain the specified geometry of the multilayer film element. In areas of the film that are not protected by the mask, the film is completely removed or partially, stopping the etching at the required depth (using stop layers and the etch selectivity with respect to the material). If necessary, the mask must be removed. In the manufacture of metal layers with the required pattern, explosive lithography is used.

As part of a multilayer film element, upon receipt of a layered ensemble with built-in mechanical stresses, at least two loop-forming layers are grown that provide built-in mechanical stresses that create a moment of forces tending to bend the film. The thickness of each layer can be set from a few microns to one atomic monolayer. In particular, a sequence of loop-forming layers with built-in mechanical stresses can be made with the possibility of setting a gradient of longitudinal mechanical stresses directed across the film. In addition, in the composition of the film element, an ensemble of layers of a light-emitting structure is performed as part of a traditional layer system — cladding layers of the first and second conductivity types (positions 5 and 7 in FIG. 5, respectively) and the unalloyed active layer 6 located between them. After the manufacture of a layered ensemble with built-in mechanical stresses and an ensemble of layers of a light-emitting structure, the geometry of the multilayer film element is obtained, mesostructuring is performed according to the ensemble of layers of the light-emitting structure, a gap is made to obtain these sections, an insulating layer 9, a first electrode (contact layer 12), layer 10 are obtained performing the function of a mirror and heat sink (see Fig. 5a), b)). In this case, the size and shape of the gap (the portion of the film element corresponding to the loop) and the indicated portions, the patterns of the layers of the light-emitting structure, the insulating layer 9, the first electrode (contact layer 12), the layer 10, which functions as a mirror and heat sink, are determined. After receiving a layer ensemble with built-in mechanical stresses and an ensemble of layers of a light-emitting structure, the operations to obtain a gap, an insulating layer 9 coated with its contact layer 12, a layer 10 acting as a mirror and heat sink can be performed in any order using any type of lithography - optical, electronic, stamped - for applying a protective mask of the desired shape to the surface of the original film and subsequent local removal of the film by etching (liquid, ion or other), but with p radiation required geometry of these elements. Thus, at the first stage, all the structural elements of the LED are made, they are in a flat state and are located on the substrate, connected with the substrate. The mesostructured heterofilm, which is a multilayer film element, is connected to the substrate 1, in particular, due to the sacrificial layer 2 present, if the latter is grown in the composition of the film element (see Figure 5). However, the manufactured LED is not yet ready for operation. It remains to give the structural elements the desired location relative to each other, forming a light-emitting structure, placing it on the first electrode due to the formation of the loop and hanging it on the loop (see Fig. 5c).

At the second stage of the manufacturing method, they proceed directly to operations related to obtaining a U-shaped suspension with a loop, the location of the light-emitting structure between the branches, bringing it into contact with the first electrode made on the insulating layer 9, which acts as a mirror and heat sink. The created film element / elements are partially freed from bonding with the substrate 1 by removing the underlying material below it / them or without removing the latter, using an action that releases the heterostructure from the bond with the substrate, for example, laser radiation. In the first case, the sacrificial layer 2, previously grown on the substrate 1, is etched. In this case, in a multilayer film element, the layer ensemble with built-in mechanical stresses in the section corresponding to the gap is bent under the action of internal mechanical stresses forming a loop of layers and is transformed into a shell with a shape corresponding to the minimum energy of internal mechanical stresses. In the sections corresponding to the branches, bending of the layer ensemble with built-in mechanical stresses does not occur, since this is prevented by communication with the substrate, with the ensemble of layers of the light-emitting structure and with the light-emitting structure itself. The bending of the portion of the film element corresponding to the loop in the desired direction is achieved using directional folding methods (A.V. Vorob'ev, V. Ya. Prinz. Directional rolling of strained heterofilms. Semiconductor Science and Technology, 17, 2002, pp614-616 ), based on the anisotropy of the elastic properties of the heterostructure layers, the etching anisotropy of the sacrificial layer, or through the use of certain configurations of the contours of the film element, which specify the desired direction of folding. When located between the branches of a U-shaped suspension on a loop of a light-emitting structure with a layer that acts as a mirror and heat sink, the latter is brought into contact with the first electrode with the formation of a rigid connection. The formation of a rigid bond due to the sticking effect.

In conclusion, they connect the wires, wires or other electrical leads to the first and second electrodes.

We emphasize that the sequence of actions - determining the shape of a multilayer film element, determining the shape and obtaining an insulating layer, coating it with the first electrode, determining the shape and obtaining a gap, manufacturing a layer that functions as a mirror and heat sink, may differ in execution sequence, depending on the means, borrowed from the arsenal of planar technology for the manufacture of LEDs - materials and technological methods.

In the particular case of the implementation of the proposed technical solution at the stage of formation of the film element, before the manufacture of the layered ensemble with built-in mechanical stresses, a sacrificial layer 2 of AlAs from 10 to 30 nm thick is made on a substrate 1, GaAs p or n type conductivity substrate, film type, is used as substrate 1 the element is separated from the substrate 1 by selective side etching of the sacrificial layer 2 from the side of the portion of the film element corresponding to the branch associated with the light-emitting structure (see. Phi .3, 5).

At the stage of formation of the film element, a layer ensemble is made with built-in mechanical stresses, which provides an electrically conductive, transparent for the emitted light, U-shaped suspension for the light-emitting structure, consisting of a mechanically stressed layer (mechanically stressed layer forming loop 3) from InGaAs p ⁺ or n ⁺ -type of conductivity and the layer associated with it (layer forming loop 4) of GaAs p ⁺ or n ⁺ -type of conductivity (see Figure 5). In addition, an ensemble of layers of a light-emitting structure is made up of the first (layer-lining of the first conductivity type 5 p-type or n-type) and the second (layer-lining of the second type 7 n-type or p-type conductivity) layer layers with between them the active layer (active layer 6, unalloyed). The first lining layer is made of AlGaInP or AlGaInAs. The active layer is made, respectively, of undoped AlGaInP or AlGaInAs, or the active layer is made containing quantum wells, respectively, of InGaP or GaAs. The second layer-lining is performed, respectively, from AlGaInP or AlGaInAs. In this case, the first layer of the lining is placed on a layer of GaAs p ⁺ or n ⁺ -type conductivity (layer forming a loop 4) of the layer ensemble with built-in mechanical stresses. The second layer-lining (layer-lining of the second type of conductivity 7 of n-type or p-type conductivity) is provided with a protective layer 8 of GaAs n ⁺ or p ⁺ -type of conductivity, on which the insulating layer 9 and the layer 10 acting as a mirror and heat sink.

In the particular case of the implementation of the method during the stage of formation of the film element, during which an ensemble of layers of a light-emitting structure is made, two sections are formed with respect to the latter with a gap to the depth of the layer ensemble with built-in mechanical stresses, thereby obtaining sections of the film element - corresponding to a branch lying on a substrate, corresponding to a branch associated with a light-emitting structure, and corresponding to a loop in a portion of a film element nta corresponding to the branch lying on the substrate, the portion of the ensemble of layers of the light-emitting structure is covered with an insulating layer 9 on which the first electrode is made, in the portion of the film element corresponding to the branch associated with the light-emitting structure containing the second portion of the ensemble of layers of the light-emitting structure, a layer 10 is made that performs the function of the mirror and heat sink, the thickness of the film element is set from 4 × 10 ^-8 m - in the area of the film element corresponding to the loop, up to 10 ^-5 m - in the area of the film element a corresponding to the branch lying on the substrate (see 5). Drawings of the layers of the film element are formed lithographically. After the manufacture of the ensemble of layers of the light-emitting structure, using lithography, an insulating layer 9 is made on the area of the film element section corresponding to the branch lying on the substrate. Then a gap is made and the indicated sections are obtained. This is accomplished by lithography and etching of the window to a depth of a layer ensemble with built-in mechanical stresses. The distance between the sections is set equal to nR, where R is the radius of curvature of the loop. You can also set a different distance. However, the selected distance between the sections should further ensure the location of the light-emitting structure with the layer acting as a mirror and heat sink 10 in contact with the first electrode, which is obtained on the dielectric layer 9. That is, it should be possible to stack these sections. The first electrode is obtained by applying a contact layer of metal using lithography, in particular explosive lithography. In addition, in the corresponding section, a layer is made that acts as a mirror and heat sink, also of metal, using lithography, in particular explosive lithography. In addition to the above, after performing the gap and obtaining the indicated portions by lithography and etching the windows to the depth of a layer ensemble with built-in mechanical stresses, the latter is additionally metallized by spraying metal into the windows, using lithography, in particular explosive lithography. The result is a metallizing loop layer 11 (see Fig.5b), c)). This is an additional operation. In the absence of metallization, the current flows through layers of a layered ensemble made of semiconductor material with built-in mechanical stresses. Metallization can be performed with gaps at the edges of the section of the film element corresponding to the loop, on which the specified section is adjacent to other sections of the film element (Fig.5b)), continuous, which requires beveled, not strictly vertical boundaries of the meso-structures.

In the particular case of the method, the insulating layer 9 is made of SiO ₂ or Si ₃ N ₄ with a thickness of about 0.2 μm. In the manufacture of the insulating layer 9, a dielectric layer of the specified thickness is applied to the original object — a solid multilayer film or a heterostructure consisting of a layer ensemble with built-in mechanical stresses and an ensemble of layers of a light-emitting structure obtained on a substrate, then lithography is performed by opening windows in the dielectric layer and etching is performed last one.

Layer 10, which acts as a mirror and heat sink, is made up of layers, for example, Ag / Au with a thickness of 20/200 nm, respectively. In the manufacture, lithography is carried out, making a window in the mask layer and determining the pattern of the layer that acts as a mirror and heat sink, 10. Then, metal layers of the specified thickness are sprayed and a subsequent “explosion” is performed.

A layered ensemble with built-in mechanical stresses in the area corresponding to the loop is additionally metallized by spraying metal into the windows, using lithography, with AuGe / Ni / Au layers 40/20/200 nm thick or Zn / Au layers respectively 20/200 nm. In the manufacture, lithography is carried out by making a window in the mask layer and determining the pattern of the layer 11 metallizing the loop. Then, the indicated layers are sprayed with the specified thickness and the subsequent “explosion”.

The first electrode is made in the form of a contact layer 12 comprising Ti / Au layers with a thickness of 40/200 nm, respectively. Lithography is carried out, making a window in the mask layer and determining the pattern of the contact layer 12. Then, metal layers are deposited with the specified thickness and a subsequent “explosion” is performed.

The second electrode in contact with the substrate is made from the rear side of the substrate, comprising 40/20/200 nm thick AuGe / Ni / Au layers or 20/200 nm thick Zn / Au layers, respectively, depending on the type of substrate conductivity. Upon receipt, a high-temperature treatment is carried out at a temperature of about 400 ° C, for example, for 10 minutes in an inert gas atmosphere, which is sufficient for fusion.

At the stage of separation of the multilayer film element in the particular case of the method, the sacrificial layer is etched in HF or in I ₂ / KI, depending on the composition of the active layer, followed by washing and drying.

Note that the radius of curvature of the obtained loop depends on the thickness and mechanical properties of all layers available in the area of the film element corresponding to the loop. The formation of a layered ensemble with built-in mechanical stresses with a large thickness will lead to a significant increase in the radius of curvature. The presence of shape-forming layers with built-in mechanical stresses in the composition of a layered ensemble with a thickness from hundreds of micrometers to units of nanometers that specify the local curvature of the shell determines its characteristic scales. Varying the local curvature by selecting the parameters of the forming layers and the thickness of the ensemble of layers of the light-emitting structure makes it possible to scale the fabricated LED or an array of LEDs.

The manufacturing method provides a wide range of sizes of LED elements (from units of nanometers to units of millimeters) and their spatial configurations. The loops made by the operations of the proposed method, based on planar technology and the principles of transformation of film elements into shells, can be obtained in various sizes, with the possibility of ensuring the required positioning of the LED elements relative to each other.

The diameter of the loop, which is a cylindrical shell, can be tens of micrometers and can be scaled to the region of submicron and nanoscale by appropriate selection of the thickness and composition of the strained thin film from which the loop is formed. It is known from the literature that to date the minimum achieved diameter of cylindrical shells is 2 nm (V.Ya. Prinz, VA Seleznev, A.K. Gutakovsky, AV Chehovskiy, VV Preobrazenskii, MA Putyato, TA Gavrilova. Free standing and overgrown InGaAs / GaAs nanotubes, nanohelical and their arrays. Physica E, 2000, v. 6, N 1-4, pp828-831).

With regard to materials, the proposed method allows the use of a sufficiently wide range of materials for both the structural layers of the loop and other structural elements of the light-emitting structure, taking into account the desired wavelength of the emitted light.

In the manufacture of LEDs, operations borrowed from the arsenal of planar technology provide high structural perfection of the internal structure of the layers forming the loop and other structural layers of the LED. High internal perfection of the loop forming layers is a guarantee of the accuracy of setting the local curvature of the shell. The factor of perfection of the internal structure of the structural layers of the light-emitting structure determines the reproducibility of the characteristics of the LED.

The presence of forming layers that accurately determine the curvature of the shell by appropriate selection of their thicknesses and internal mechanical stresses, as well as methods of planar technology for reproducing patterns of layers of the film element during mesostructuring of the heterostructure provide high reproducibility of the shape of the shell - loop.

Thus, the above shows how the features of the design and manufacture of LEDs affect the achievement of a technical result.

The use of methods and materials of the traditional technology for the production of integrated circuits (ICs) allows integration with IP.

In the General case, the implementation of the LED contains (see Figure 5) the substrate 1, the light-emitting structure and the first electrode located on the working side of the substrate, the second electrode in contact with the substrate. An electrically conductive U-shaped suspension for a light-emitting structure is made in the LED on the working side of the substrate. The U-shaped suspension lies on the substrate 1 with one branch and is rigidly connected with it. Between the branches of the suspension in the direction from the substrate 1, a sequence of elements rigidly connected with the branches is made. The sequence of elements is formed from sequentially rigidly connected insulating layer 9, the first electrode, a layer that acts as a mirror and heat sink, a light-emitting structure.

In special cases, the implementation of the LED is implemented taking into account the following (Figure 5).

The U-shaped suspension for the light-emitting structure is made on the basis of a layer ensemble with built-in mechanical stresses. The branch lying on the substrate 1 is formed by a section of a layer ensemble with built-in mechanical stresses that is in a planar state due to communication from the working side of the substrate 1 with the substrate. On the other hand (from the side facing the space between the branches) - with the insulating layer 9 and the first electrode located between the branches. The other branch is formed by a section of a layer ensemble with built-in mechanical stresses that is in a planar state due to the connection with the light-emitting structure located between the branches and the layer that acts as a mirror and heat sink. A loop connecting the branches, made electrically conductive, is formed due to bending under the influence of built-in mechanical stresses of a section of a layered ensemble with built-in mechanical stresses, free from bonds with elements that keep it in a flat state. The first electrode is made in the form of a contact layer 12. The second electrode in contact with the substrate 1 is made from the rear side of the substrate 1.

Between the insulating layer 9 and the branch of the U-shaped suspension lying on the substrate 1, formed by a section of a layer ensemble with built-in mechanical stresses that are in a planar state due to bonds with the substrate, the insulating layer 9 and the first electrode, an ensemble of layers of a light-emitting structure is made. The light-emitting structure is made on the basis of an ensemble of layers of a light-emitting structure, suspended on a loop with an adjoining layer that acts as a mirror and heat sink, 10, which is equipped with a light-emitting structure, to the contact layer 12 with the possibility of realizing rigid mechanical and electrical connections.

As part of the light-emitting structure, the first (cladding layer of the first conductivity type 5 p or n-type conductivity) and the second (cladding layer of the second conductivity type 7 n or p-type conductivity) are made of the cladding layers and the active layer between them, undoped, 6. Moreover, the second layer-lining is made adjacent to the layer acting as a mirror and heat sink, 10. The ensemble of layers of the light-emitting structure is made up of the first and second layer-lining, respectively, layer-lining of the first conductivity type 5 and layer-lining ka of the second type of conductivity 7, with an active layer located between them, undoped, 6.

The substrate 1 is made of GaAs p ⁺ or n ⁺ -type conductivity. A sacrificial layer 2 of AlAs p ⁺ or n ⁺ -type of conductivity is made between the substrate 1 and the branch lying on the substrate, formed by a section of the layer ensemble with built-in mechanical stresses that are in a planar state due to bonds with the substrate 1, the insulating layer 9 and the first electrode providing a rigid connection with the substrate 1.

An electrically conductive U-shaped suspension for the light-emitting structure, transparent to the emitted light, is made on the basis of a layer ensemble with built-in mechanical stresses as part of a mechanically stressed layer of InGaAs p ⁺ or n ⁺ -type of conductivity (mechanically stressed layer forming a loop, 3) and bound with it a layer of GaAs p ⁺ or n ⁺ -type of conductivity (layer forming a loop, 4). In the suspension, a loop made electrically conductive is metallized with layers of AuGe / Ni / Au with a thickness of 40/20/200 nm, respectively, or with Zn / Au layers with a thickness of 20/200 nm respectively, layer 11 metallizing the loop.

The first layer-lining of the first conductivity type 5 is made of AlGaInP or AlGaInAs p or n-type conductivity, the active layer 6 is made of undoped AlGaInP or AlGaInAs, and the second layer-lining of the second conductivity type 7 is made of AlGaInP or AlGaInAs n-type or p- type of conductivity.

Between the ensemble of layers of the light-emitting structure and the insulating layer 9, between the light-emitting structure and the layer acting as a mirror and heat sink 10, a protective layer 8 of GaAs n ⁺ or p ⁺ -type conductivity is made.

The insulating layer 9 of the LED is made of SiO ₂ or Si ₃ N ₄ with a thickness of about 0.2 μm.

The first electrode of the LED is made in the form of a contact layer 12 in the composition of Ti / Au layers with a thickness of 40/200 nm, respectively, the second electrode in contact with the substrate is made in a layer of AuGe / Ni / Au with a thickness of 40/20/200 nm, respectively or Zn / Au layers, respectively, 20/200 nm thick. A layer acting as a mirror and heat sink 10 is formed as a part of Ag / Au layers with a thickness of 20/200 nm, respectively.

The LED works as follows.

Thanks to the above developed design, the operation of the proposed LED is no different from LEDs with traditional designs. When voltage is applied and the electric current is passed through the p-n junction in the forward direction, the charge carriers - electrons and holes - recombine in the active layer 6 with the emission of photons (due to the transition of electrons from one energy level to another).

In this case, the generation of light is carried out in the active layer 6 of the light-emitting structure suspended on a suspension loop. The active layer 6 in the ensemble of layers of the light-emitting structure located between the insulating layer 9 covered by the contact layer 12 (the first electrode) and the U-shaped branch of the light-emitting structure lying on the substrate (see Fig. 5c) during generation light is not involved, since it is not in the electric circuit due to the presence of an insulating layer 9.

As information confirming the possibility of implementing the method of manufacturing an LED with the achievement of the specified technical result, we give the following examples of its implementation.

Example 1

In the manufacture of the LED, a light-emitting structure is obtained, the first electrode located on the working side of the substrate, form a second electrode in contact with the substrate (see Figure 5). As substrate 1, a GaAs substrate of n ⁺ -type conductivity (100) is used.

First, on the working side of the substrate 1, a multilayer film element connected to the substrate is formed using materials, the geometry of its layers and built-in mechanical stresses, which provide a light-emitting structure and an electrically conductive U-shaped suspension transparent to the emitted light for a light-emitting structure lying on the substrate with one branch and rigidly connected to the substrate, and another branch associated with the light-emitting structure with hanging on a loop (see Fig.5A)). At the stage of formation of the film element, before the manufacture of a layer ensemble with built-in mechanical stresses on the substrate 1, a sacrificial layer 2 of AlAs 10 nm thick, n ⁺ -type conductivity, with a concentration of free charge carriers of about 10 ¹⁹ cm ^{-3 is made} .

Further, at the stage of formation of the film element, a sequentially layered ensemble with built-in mechanical stresses, an ensemble of layers of a light-emitting structure, are made. In relation to the latter, two sections are formed, located relative to each other with a gap depth to the layer ensemble with built-in mechanical stresses, thereby obtaining sections of the film element - the corresponding branch lying on the substrate, the corresponding branch associated with the light-emitting structure, and the corresponding loop. In the portion of the film element corresponding to the branch lying on the substrate, the portion of the ensemble of layers of the light-emitting structure is covered with an insulating layer 9 (see Fig. 5a)) on which the first electrode is made (see Fig. 5b)). On the portion of the film element corresponding to the branch associated with the light-emitting structure containing the second portion of the ensemble of layers of the light-emitting structure, a layer 10 is made that acts as a mirror and heat sink (see Fig.5b)).

A layer ensemble with built-in mechanical stresses, which provides an electrically conductive, transparent for emitted light, U-shaped suspension for a light-emitting structure, is made up of a mechanically stressed layer (mechanically stressed layer forming a loop, 3 (see Figure 5)) from InGaAs n ⁺ -type of conductivity and the layer associated with it (loop-forming layer, 4 (see FIG. 5)) of GaAs n ⁺ -type of conductivity. The ensemble of layers of the light-emitting structure is made up of the first and second layer-layers (respectively, the layer-lining of the first type of conductivity 5 and the layer-lining of the second type of conductivity 7 (see Figure 5)) with an active layer located between them (active layer, undoped 6 (see FIG. 5)), the first layer is made of AlGaInP of the first type of n-type conductivity, the active layer is made of undoped AlGaInP with GaInP quantum wells, respectively, and the second layer is made of AlGaInP, respectively the second type of conductivity p ⁺ - type. The first layer-lining is placed on a layer of GaAs n ⁺ -type of conductivity (layer forming a loop, 4 (see Figure 5)) of a layered ensemble with built-in mechanical stresses, the second layer-lining is provided with a protective layer 8 of GaAs p ⁺ -type conductivity, on which, on the portion of the film element corresponding to the branch lying on the substrate 1, an insulating layer 9 and a layer acting as a mirror and heat sink are performed, 10 on the portion of the film element corresponding to the branch associated with the light-emitting structure (see Fig.5b )).

When forming a film element, which includes obtaining an ensemble of layers of a light-emitting structure and in relation to the latter, the formation of two sections located relative to each other with a gap depth to a layer ensemble with built-in mechanical stresses, thereby obtaining sections of the film element - the corresponding branch lying on the substrate, the corresponding branch associated with the light-emitting structure, and the corresponding loop, with a coating on the area of the film element corresponding to lying on the substrate a branch of a section of the ensemble of layers of the light-emitting structure with an insulating layer 9 and manufacturing the first electrode on the last, with the manufacture of a portion of a film element corresponding to the branch associated with the light-emitting structure containing the second section of the ensemble of layers of the light-emitting structure, a layer that acts as a mirror and heat sink, 10, thick film element set between 6 × 10 ^-8 m - in the area of the film element corresponding to the loop 10 ^-5 m - in the area of the film element, lying on the relevant substrate vet and.

Drawings of the layers of the film element are formed lithographically, after the manufacture of the ensemble of layers of the light-emitting structure. Using lithography, an insulating layer 9 is made on the area of the portion of the film element corresponding to the branch lying on the substrate. When forming the insulating layer 9, the oxide is first removed from the surface in HCl: H ₂ O for about 1 min, then a SiO ₂ dielectric with a thickness of about 0.2 μm is applied, lithography is performed to open the windows using etching in HF: H ₂ O for about 1 min The dielectric layer is removed from the remaining area of the film element. Next, the first electrode is made — the contact layer 12. A lithography is carried out to specify the pattern of the contact layer 12 and metallization in the composition of Ti / Au layers, respectively, 40/200 nm thick. Then carry out the "explosion".

Then a gap is made and the indicated sections are obtained by lithography and etching a window with a depth of up to a layer ensemble with built-in mechanical stresses, reaching the distance between the sections equal to πR, R is the radius of curvature of the loop, or another distance, which further ensures the location of the light-emitting structure with the layer performing the function of the mirror and heat sink, in contact with the first electrode, which is obtained on the insulating layer by applying a contact layer of metal using lithography. Lithography sets the pattern of the portion of the film element corresponding to the loop. Etching is carried out first in H ₃ PO ₄ : H ₂ O ₂ : H ₂ O (3: 1: 50) for about 4 minutes, then in HF: H ₂ O (1:10) for about 1 minute.

After that, the general shape, contour, of the multilayer film element is set. A lithography is carried out to specify the general form of the meso structure. Etching to substrate 1 is carried out in H ₃ PO ₄ : H ₂ O ₂ : H ₂ O (3: 1: 50) for about 4 minutes.

Then, a second electrode is produced that is in contact with the substrate 1. It is made from the rear side of the substrate 1 as a part of layers of AuGe / Ni / Au with a thickness of 40/20/200 nm, respectively. These layers are sprayed onto the non-working side of the substrate 1 and high-temperature treatment is carried out for melting at a temperature of 400 *** C for 10 minutes in an inert gas atmosphere.

Next, a layer 10 is made, which functions as a mirror and heat sink, from metal, using lithography. A lithography is carried out to set the pattern and metallization in the composition of Ag / Au layers with a thickness of 40/200 nm, respectively. Then carry out the "explosion".

Then, the film element is partially separated from the substrate 1, leaving it connected in the region of the film element corresponding to the branch lying on the substrate, on which the section of the ensemble of layers of the light-emitting structure is made, covered with an insulating layer 9 with the first electrode made on it, transforming the layer under the action of built-in mechanical stresses ensemble with built-in mechanical stresses in a U-shaped suspension with a loop and the location of the resulting light-emitting structure from the ensemble of layers of light-emitting st uktury between the branches, by separating the film member from the substrate 1 ensemble revolution emitting layers with a layer structure, performing a mirror function and a heat sink 10 and placing the latter in contact with the first electrode to form a rigid connection due to the sticking effect in bringing into contact layers. The film element is separated from the substrate by selective side etching of the sacrificial layer from the side of the portion of the film element corresponding to the branch associated with the light-emitting structure. The sacrificial layer is etched in HF, then washed and dried. Thus, the light-emitting structure is an ensemble of layers of the light-emitting structure inverted relative to the substrate.

Example 2

In the manufacture of the LED, a light-emitting structure is obtained, the first electrode located on the working side of the substrate, form a second electrode in contact with the substrate (see Figure 5). As the substrate 1, a GaAs p ⁺ -type conductivity substrate (100) is used.

First, on the working side of the substrate 1, a multilayer film element connected to the substrate is formed using materials, the geometry of its layers and built-in mechanical stresses, which provide a light-emitting structure and an electrically conductive U-shaped suspension transparent to the emitted light for a light-emitting structure lying on the substrate with one branch and rigidly connected to the substrate, and another branch associated with the light-emitting structure with hanging on a loop (see Fig.5A)). At the stage of formation of the film element, before the manufacture of the layer ensemble with built-in mechanical stresses on the substrate 1, a sacrificial layer 2 is made of AlAs 12 nm thick, p ⁺ -type of conductivity, with a concentration of free charge carriers of about 10 ¹⁹ cm ^-3 .

Further, at the stage of formation of the film element, a sequentially layered ensemble with built-in mechanical stresses, an ensemble of layers of a light-emitting structure, are made. In relation to the latter, two sections are formed, located relative to each other with a gap depth to the layer ensemble with built-in mechanical stresses, thereby obtaining sections of the film element - the corresponding branch lying on the substrate, the corresponding branch associated with the light-emitting structure, and the corresponding loop. In the portion of the film element corresponding to the branch lying on the substrate, the portion of the ensemble of layers of the light-emitting structure is covered with an insulating layer 9 (see Fig. 5a)) on which the first electrode is made (see Fig. 5b)). On the portion of the film element corresponding to the branch associated with the light-emitting structure containing the second portion of the ensemble of layers of the light-emitting structure, a layer 10 is made that acts as a mirror and heat sink (see Fig.5b)).

A layer ensemble with built-in mechanical stresses, which provides an electrically conductive, transparent for emitted light, U-shaped suspension for a light-emitting structure, is made up of a mechanically stressed layer (mechanically stressed layer forming a loop, 3 (see Figure 5)) from In _{0, 2} Ga _0.8 As p ⁺ -type conductivity, 10 nm thick with a concentration of free charge carriers of about 10 ¹⁹ cm ^-3 and associated% layer 4 (layer forming a loop (see Figure 5)) from GaAs p ⁺ conductivity type, 20 nm thick, with a concentration of free nose charge carriers of about 10 ¹⁹ cm ^-3 , on which an additional layer of GaAs p ⁺⁺ conductivity type is formed, 10 nm thick, with a concentration of free charge carriers of about 10 ²⁰ cm ^-3 . The last layer is made to improve contact during subsequent metallization of the loop. The ensemble of layers of the light-emitting structure is made up of the first and second layer-layers (respectively, the layer-lining of the first type of conductivity 5 and the layer-lining of the second type of conductivity 7 (see Figure 5)) with an active layer located between them (active layer, undoped 6. (see Figure 5)). The first lining layer is made of AlGaInAs — Al _0.6 Ga _0.4 As of the first type of conductivity — p-type with a concentration of free charge carriers of about 10 ¹⁸ cm ^-3 and a thickness of 100 nm. The active layer is made, respectively, of undoped AlGaInAs as part of a layer system containing GaAs quantum wells. So, it is performed as part of the following sequence: Al _0.2 Ga _0.8 As 20 nm thick; three pairs of a 10 nm thick GaAs quantum well layer and a 6 nm thick Al _0.2 Ga _0.8 As barrier layer; Al _0.2 Ga _0.8 As 14 nm thick. The second layer-lining is performed, respectively, from AlGaInAs - Al _0.35 Ga _0.65 As of the second type of conductivity - n-type, 100 nm thick, with a concentration of free charge carriers of about 10 ¹⁸ cm ^-3 . The first lining layer is placed on the loop-forming layer 4 (see FIG. 5)) of a layered ensemble with built-in mechanical stresses, performing the indicated auxiliary layer on it. The second lining layer is provided with a protective layer 8 of GaAs n ⁺ -type conductivity, 20 nm thick, with a concentration of free charge carriers of about 10 ¹⁹ cm ^-3 , which is also additionally, to improve contact when performing the next layer of metal (a layer that performs the function mirrors and heat sink, 10), they make a layer of GaAs p ⁺⁺ type of conductivity, 10 nm thick, with a concentration of free charge carriers of about 10 ²⁰ cm ^-3 . On the portion of the film element corresponding to the branch lying on the substrate 1, an insulating layer 9 and a layer acting as a mirror and heat sink are performed, 10 on the portion of the film element corresponding to the branch associated with the light-emitting structure (see Fig. 5b).

When forming a film element, which includes obtaining an ensemble of layers of a light-emitting structure and in relation to the latter, the formation of two sections located relative to each other with a gap depth to a layer ensemble with built-in mechanical stresses, thereby obtaining sections of the film element - the corresponding branch lying on the substrate, the corresponding branch associated with the light-emitting structure, and the corresponding loop, with a coating on the area of the film element corresponding to lying on the substrate a branch of a section of the ensemble of layers of the light-emitting structure with an insulating layer 9 and manufacturing the first electrode on the last, with the manufacture of a portion of a film element corresponding to the branch associated with the light-emitting structure containing the second section of the ensemble of layers of the light-emitting structure, a layer that acts as a mirror and heat sink, 10, thick film element is set from 5,2 × 10 ^-8 m - in the area of the film element corresponding loop to 0,675 × 10 ^-6 m - in the area of the film element, lying on the relevant substrate branch.

Drawings of the layers of the film element are formed lithographically, after the manufacture of the ensemble of layers of the light-emitting structure. Using lithography, an insulating layer 9 is made on the area of the portion of the film element corresponding to the branch lying on the substrate. When forming the insulating layer 9, the oxide is first removed from the surface in HCl: H ₂ O for about 1 min, then a SiO ₂ dielectric with a thickness of about 0.2 μm is applied, lithography is performed to open the windows using etching in HF: H ₂ O for about 1 min Next, the first electrode is made — the contact layer 12. Lithography is carried out to set the pattern of the contact layer 12 and metallization is carried out in the composition of Ti / Au layers with a thickness of 20/100 nm, respectively. Then carry out the "explosion".

Then a gap is made and the indicated sections are obtained by lithography and etching a window with a depth of up to a layer ensemble with built-in mechanical stresses, reaching the distance between the sections equal to πR, R is the radius of curvature of the loop, or another distance, which further ensures the location of the light-emitting structure with the layer performing the function of the mirror and heat sink, in contact with the first electrode, which is obtained on the insulating layer by applying a contact layer of metal using lithography. Lithography sets the pattern of the portion of the film element corresponding to the loop. Etching is carried out first in H ₃ PO ₄ : H ₂ O ₂ : H ₂ O (3: 1: 50) for about 4 minutes, then in HF: H ₂ O (1:10) for about 1 minute to remove the feet -layer (an AlGaAs layer with an Al content of at least 40% serves as a stop layer).

After that, the general shape, contour, of the multilayer film element is set. A lithography is carried out to specify the general form of the meso structure. Etching to substrate 1 is carried out in H ₃ PO ₄ : H ₂ O ₂ : H ₂ O (3: 1: 50) for about 6 minutes.

Then, a second electrode is produced that is in contact with the substrate 1. It is made from the rear side of the substrate 1 as a part of layers of AuGe / Ni / Au with a thickness of 40/20/200 nm, respectively. These layers are sprayed onto the non-working side of the substrate 1 and a high-temperature treatment is carried out for melting at a temperature of 400 ° C for 10 minutes in an inert gas atmosphere.

After completing the gap and obtaining the indicated areas by lithography and etching the window to the depth of a layer ensemble with built-in mechanical stresses, the latter is additionally metallized by spraying metal into the windows, using lithography. Lithography is carried out, AuGe / Ni / Au is deposited with a thickness of 40/20/200 nm, respectively, and an “explosion” is carried out.

Next, make a layer that performs the function of a mirror and heat sink, 10 of metal, using lithography. A lithography is carried out to set the pattern and metallization in the composition of Ti / Au layers with a thickness of 20/100 nm, respectively. Then carry out the "explosion".

Then, the film element is partially separated from the substrate 1, leaving it connected in the region of the film element corresponding to the branch lying on the substrate, on which the section of the ensemble of layers of the light-emitting structure is made, covered with an insulating layer 9 with the first electrode made on it, transforming the layer under the action of built-in mechanical stresses ensemble with built-in mechanical stresses in a U-shaped suspension with a loop and the location of the resulting light-emitting structure from the ensemble of layers of light-emitting st uktury between the branches, by separating the film member from the substrate 1 ensemble revolution emitting layers with a layer structure, performing a mirror function and a heat sink 10 and placing the latter in contact with the first electrode to form a rigid connection due to the sticking effect in bringing into contact layers. The film element is separated from the substrate by selective side etching of the sacrificial layer from the side of the portion of the film element corresponding to the branch associated with the light-emitting structure. The sacrificial layer is etched in HF, then washed and dried. Thus, the light-emitting structure is an ensemble of layers of the light-emitting structure inverted relative to the substrate.

Example 3

In the manufacture of the LED, a light-emitting structure is obtained, the first electrode located on the working side of the substrate, form a second electrode in contact with the substrate (see Figure 5). As the substrate 1, a GaAs p ⁺ -type conductivity substrate (100) is used.

First, on the working side of the substrate 1, a multilayer film element connected to the substrate is formed using materials, the geometry of its layers and built-in mechanical stresses, which provide a light-emitting structure and an electrically conductive U-shaped suspension transparent to the emitted light for a light-emitting structure lying on the substrate with one branch and rigidly connected to the substrate, and another branch associated with the light-emitting structure with hanging on a loop (see Fig.5A)). At the stage of formation of the film element, before the fabrication of the layer ensemble with built-in mechanical stresses on the substrate 1, a sacrificial layer 2 of AlAs 30 nm thick, p ⁺ -type of conductivity, with a concentration of free charge carriers of about 10 ¹⁹ cm ^{-3 is made} .

Further, at the stage of formation of the film element, a sequentially layered ensemble with built-in mechanical stresses, an ensemble of layers of a light-emitting structure, are made. In addition, in the same process, after obtaining the latter, undoped layers are made, first Al _0.6 Ga _0.4 As 100 nm thick, then GaAs 100 nm thick, they are made to obtain an insulating layer 9. Regarding the ensemble of layers of the light-emitting structure form two sections located relative to each other with a gap depth to the layer ensemble with built-in mechanical stresses, thereby obtaining sections of the film element - corresponding to the branch lying on the substrate, corresponding to the branch associated with the light emitting structure, and corresponding loop. In the portion of the film element corresponding to the branch lying on the substrate, the portion of the ensemble of layers of the light-emitting structure is covered with an insulating layer 9 (see Fig. 5a)) on which the first electrode is made (see Fig. 5b)). On the portion of the film element corresponding to the branch associated with the light-emitting structure containing the second portion of the ensemble of layers of the light-emitting structure, a layer is made that acts as a mirror and heat sink, 10 (see Fig.5b)).

A layer ensemble with built-in mechanical stresses, which provides an electrically conductive, transparent for emitted light, U-shaped suspension for a light-emitting structure, is made up of a mechanically stressed layer (mechanically stressed layer forming a loop, 3 (see Figure 5)) from In _{0, 2} Ga _0.8 As p ⁺ -type conductivity, 10 nm thick with a concentration of free charge carriers of about 10 ¹⁹ cm ^-3 and the layer associated with it (layer forming a loop, 4 (see Figure 5)) from GaAs p ⁺ conductivity type, 20 nm thick, with a concentration of free nose charge carriers of about 10 ¹⁹ cm ^-3 , on which an additional layer of GaAs p ⁺⁺ conductivity type is formed, 10 nm thick, with a concentration of free charge carriers of about 10 ²⁰ cm ^-3 . The last layer is made to improve contact during subsequent metallization of the loop. The ensemble of layers of the light-emitting structure is made up of the first and second layer-layers (respectively, the layer-lining of the first type of conductivity 5 and the layer-lining of the second type of conductivity 7 (see Figure 5)) with an active layer located between them (active layer, undoped , 6 (see Figure 5)). The first lining layer is made of AlGaInAs — Al _0.6 Ga _0.4 As of the first type of conductivity — p-type with a concentration of free charge carriers of about 2 × 10 ¹⁸ cm ^-3 , 100 nm thick. The active layer is made, respectively, of undoped AlGaInAs as part of a layer system containing GaAs quantum wells. So, it is performed as part of the following sequence: Al _0.2 Ga _0.8 As 20 nm thick; three pairs of a 10 nm thick GaAs quantum well layer and a 6 nm thick Al _0.2 Ga _0.8 As barrier layer; Al _0.2 Ga _0.8 As 14 nm thick. The second lining layer is made, respectively, of AlGaInAs - Al _0.35 Ga _0.65 As of the second type of conductivity - n-type, 100 nm thick, with a concentration of free charge carriers of about 2 × 10 ¹⁸ cm ^-3 . The first lining layer is placed on the loop-forming layer 4 (see FIG. 5)) of a layered ensemble with built-in mechanical stresses, performing the indicated auxiliary layer on it. The second lining layer is provided with a protective layer 8 of GaAs n ⁺ -type conductivity, 20 nm thick, with a concentration of free charge carriers of about 10 ¹⁹ cm ^-3 , which is also additionally, to improve contact when performing the next layer of metal (a layer that performs the function mirrors and heat sink, 10), they make a layer of GaAs p ⁺⁺ type of conductivity, 10 nm thick, with a concentration of free charge carriers of about 10 ²⁰ cm ^-3 . On the portion of the film element corresponding to the branch lying on the substrate 1, an insulating layer 9 and a layer acting as a mirror and heat sink are performed, 10 on the portion of the film element corresponding to the branch associated with the light-emitting structure (see Fig. 5b).

When forming a film element, which includes obtaining an ensemble of layers of a light-emitting structure and in relation to the latter, the formation of two sections located relative to each other with a gap depth to a layer ensemble with built-in mechanical stresses, thereby obtaining sections of the film element - the corresponding branch lying on the substrate, the corresponding branch associated with the light-emitting structure, and the corresponding loop, with a coating on the area of the film element corresponding to lying on the substrate a branch of a section of the ensemble of layers of the light-emitting structure with an insulating layer 9 and manufacturing the first electrode on the last, with the manufacture of a portion of a film element corresponding to the branch associated with the light-emitting structure containing the second section of the ensemble of layers of the light-emitting structure, a layer that acts as a mirror and heat sink, 10, thick film element is set from 7,0 × 10 ^-8 m - in the area of the film element corresponding loop to 0,604 × 10 ^-6 m - in the area of the film element, lying on the relevant substrate branch.

The layer patterns of the film element are formed lithographically, after the ensemble of layers of the light-emitting structure and the formation of layers for the manufacture of the insulating layer 9 are made — undoped layers: Al _0.6 Ga _0.4 As 100 nm thick, GaAs, 100 nm thick. Using lithography, an insulating layer 9 is made on the area of the portion of the film element corresponding to the branch lying on the substrate. When forming the insulating layer 9, first, lithography sets its pattern and simultaneously the pattern of the contact layer 12, then hot treatment (at a temperature of 60 ÷ 70 ° C) is carried out in H ₂ O ₂ for about 1 min. for surface oxidation. Next, on the thus obtained insulating layer 9, the first electrode is made — the contact layer 12. Metallization is carried out by sputtering of Ni / Al / Au layers with a thickness of 2/20/100 nm, respectively. Then carry out the "explosion".

Then a gap is made and the indicated sections are obtained by lithography and etching a window with a depth of up to a layer ensemble with built-in mechanical stresses, reaching the distance between the sections equal to πR, R is the radius of curvature of the loop, or another distance, which further ensures the location of the light-emitting structure with the layer performing the function of the mirror and heat sink, in contact with the first electrode, which is obtained on the insulating layer by applying a contact layer of metal using lithography. Lithography sets the pattern of the portion of the film element corresponding to the loop. Etching is carried out first in H ₃ PO ₄ : H ₂ O ₂ : H ₂ O (3: 1: 50) for about 6.5 minutes, then in HF: H ₂ O (1:10) for about 1 minute to remove the stop layer (as a stop layer, an AlGaAs layer with an Al content of at least 40% is used).

After that, the general shape, contour, of the multilayer film element is set. A lithography is carried out to specify the general form of the meso structure. Etching to substrate 1 in H ₃ PO ₄ : H ₂ O ₂ : H ₂ O (3: 1: 50) is carried out for about 8 minutes.

Then, a second electrode is produced that is in contact with the substrate 1. It is made from the rear side of the substrate 1 as a part of layers of AuGe / Ni / Au with a thickness of 40/20/200 nm, respectively. These layers are sprayed onto the non-working side of the substrate 1 and a high-temperature treatment is carried out for melting at a temperature of 400 ° C for 10 minutes in an inert gas atmosphere.

After completing the gap and obtaining the indicated areas by lithography and etching the window to the depth of a layer ensemble with built-in mechanical stresses, the latter is additionally metallized by spraying metal into the windows, using lithography. Lithography is carried out, AuGe / Ni / Au is deposited with a thickness of 40/20/200 nm, respectively, and an “explosion” is carried out.

Next, make a layer that performs the function of a mirror and heat sink, 10 of metal, using lithography. A lithography is performed on undoped layers — Al _0.6 Ga _0.4 As 100 nm thick, GaAs 100 nm thick — to specify the pattern. Etching is carried out in H ₃ PO ₄ : H ₂ O ₂ : H ₂ O (3: 1: 50) for about 2 minutes to the stop layer (an AlGaAs layer with an A1 content of at least 40% is used as the stop layer) . Remove the stop layer in HF: H ₂ O (1:10) for about 1 minute. Metallization is carried out in the composition of Ti / Au layers with a thickness of 20/100 nm, respectively. Then carry out the "explosion".

Then, the film element is partially separated from the substrate 1, leaving it connected in the region of the film element corresponding to the branch lying on the substrate, on which the section of the ensemble of layers of the light-emitting structure is made, covered with an insulating layer 9 with the first electrode made on it, transforming the layer under the action of built-in mechanical stresses ensemble with built-in mechanical stresses in a U-shaped suspension with a loop and the location of the resulting light-emitting structure from the ensemble of layers of light-emitting st uktury between the branches, by separating the film member from the substrate 1 ensemble revolution emitting layers with a layer structure, performing a mirror function and a heat sink 10 and placing the latter in contact with the first electrode to form a rigid connection due to the sticking effect in bringing into contact layers. The film element is separated from the substrate by selective side etching of the sacrificial layer from the side of the portion of the film element corresponding to the branch associated with the light-emitting structure. The sacrificial layer is etched in HF, then washed and dried. Thus, the light-emitting structure is an ensemble of layers of the light-emitting structure inverted relative to the substrate.

In the described implementation example, isolation of the active layer of the ensemble of layers of the light-emitting structure on the portion of the film element corresponding to the branch lying on the substrate from the contact fields was carried out by growing, after the formation of the active layer, undoped AlGaAs and GaAs layers. The metal film forming the contact fields creates a Schottky barrier when sputtering on undoped GaAs. To locally remove these layers and expose the active layer, lithography and etching were performed, similar in meaning to opening windows in a SiO ₂ mask in the previous implementation example. In the described implementation example, all three etchings were carried out at different depths from the surface of the original object — the heterostructure: to form a portion of the film element corresponding to the loop; to the substrate; to expose a heavily doped layer for the manufacture of a layer that acts as a mirror and heat sink.

In the following implementation example, example 4, undoped AlGaAs and GaAs layers, intended to obtain an insulating layer 9, after manufacturing the latter, they are removed relative to the entire remaining area of the film element by etching them to a heavily doped GaAs layer, after which two etching is performed from the surface of the heavily doped GaAs layer at different depths: to form a portion of the film element corresponding to the loop; to the substrate.

Example 4

In the manufacture of the LED, a light-emitting structure is obtained, the first electrode located on the working side of the substrate, form a second electrode in contact with the substrate (see Figure 5). As the substrate 1, a GaAs p ⁺ -type conductivity substrate (100) is used.

First, on the working side of the substrate 1, a multilayer film element connected to the substrate is formed using materials, the geometry of its layers and built-in mechanical stresses, which provide a light-emitting structure and an electrically conductive U-shaped suspension transparent to the emitted light for a light-emitting structure lying on the substrate with one branch and rigidly connected to the substrate, and another branch associated with the light-emitting structure with hanging on a loop (see Fig.5A)). At the stage of formation of the film element, before the fabrication of the layer ensemble with built-in mechanical stresses on the substrate 1, a sacrificial layer 2 of AlAs 30 nm thick, p ⁺ -type of conductivity, with a concentration of free charge carriers of about 10 ¹⁹ cm ^{-3 is made} .

Further, at the stage of formation of the film element, a sequentially layered ensemble with built-in mechanical stresses, an ensemble of layers of a light-emitting structure, are made. In addition, in the same process, after obtaining the latter, undoped layers are made, first Al _0.6 Ga _0.4 As 100 nm thick, then GaAs 100 nm thick, they are made to obtain an insulating layer 9. Regarding the ensemble of layers of the light-emitting structure form two sections located relative to each other with a gap depth to the layer ensemble with built-in mechanical stresses, thereby obtaining sections of the film element - corresponding to the branch lying on the substrate, corresponding to the branch associated with the light emitting structure, and corresponding loop. In the portion of the film element corresponding to the branch lying on the substrate, the portion of the ensemble of layers of the light-emitting structure is covered with an insulating layer 9 (see Fig. 5a)) on which the first electrode is made (see Fig. 5b)). On the portion of the film element corresponding to the branch associated with the light-emitting structure containing the second portion of the ensemble of layers of the light-emitting structure, a layer is made that acts as a mirror and heat sink, 10 (see Fig.5b)).

A layer ensemble with built-in mechanical stresses, which provides an electrically conductive, transparent for emitted light, U-shaped suspension for a light-emitting structure, is made up of a mechanically stressed layer (mechanically stressed layer forming a loop, 3 (see Figure 5)) from In _{0, 2} Ga _0.8 As p ⁺ -type conductivity, 10 nm thick with a concentration of free charge carriers of about 10 ¹⁹ cm ^-3 and the layer associated with it (layer forming a loop, 4 (see Figure 5)) from GaAs p ⁺ conductivity type, 20 nm thick, with a concentration of free nose charge carriers of about 10 ¹⁹ cm ^-3 , on which an additional layer of GaAs p ⁺⁺ conductivity type is formed, 10 nm thick, with a concentration of free charge carriers of about 10 ²⁰ cm ^-3 . The last layer is made to improve contact during subsequent metallization of the loop. The ensemble of layers of the light-emitting structure is made up of the first and second layer-layers (respectively, the layer-lining of the first type of conductivity 5 and the layer-lining of the second type of conductivity 7 (see Figure 5)) with an active layer located between them (active layer, undoped , 6 (see Figure 5)). The first lining layer is made of AlGaInAs — Al _0.6 Ga _0.4 As of the first type of conductivity — p-type with a concentration of free charge carriers of about 2 × 10 ¹⁸ cm ^-3 , 100 nm thick. The active layer is made, respectively, of undoped AlGaInAs as part of a layer system containing GaAs quantum wells. So, it is performed as part of the following sequence: Al _0.2 Ga _0.8 As layer 20 nm thick; three pairs of a 10 nm thick GaAs quantum well layer and a 6 nm thick Al _0.2 Ga _0.8 As barrier layer; Al _0.2 Ga _0.8 As layer 14 nm thick. The second lining layer is made, respectively, of AlGaInAs - Al _0.35 Ga _0.65 As of the second type of conductivity - n-type, 100 nm thick, with a concentration of free charge carriers of about 2 × 10 ¹⁸ cm ^-3 . The first lining layer is placed on the loop-forming layer 4 (see FIG. 5)) of a layered ensemble with built-in mechanical stresses, performing the indicated auxiliary layer on it. The second lining layer is provided with a protective layer 8 of GaAs n ⁺ -type conductivity, 20 nm thick, with a concentration of free charge carriers of about 10 ¹⁹ cm ^-3 , which is also additionally, to improve contact when performing the next layer of metal (a layer that performs the function mirrors and heat sink, 10), they make a layer of GaAs p ⁺⁺ type of conductivity, 10 nm thick, with a concentration of free charge carriers of about 10 ²⁰ cm ^-3 . On the portion of the film element corresponding to the branch lying on the substrate 1, an insulating layer 9 and a layer acting as a mirror and heat sink are performed, 10 on the portion of the film element corresponding to the branch associated with the light-emitting structure (see Fig. 5b).

When forming a film element, which includes obtaining an ensemble of layers of a light-emitting structure and in relation to the latter, the formation of two sections located relative to each other with a gap depth to a layer ensemble with built-in mechanical stresses, thereby obtaining sections of the film element - the corresponding branch lying on the substrate, the corresponding branch associated with the light-emitting structure, and the corresponding loop, with a coating on the area of the film element corresponding to lying on the substrate a branch of a section of the ensemble of layers of the light-emitting structure with an insulating layer 9 and manufacturing the first electrode on the last, with the manufacture of a portion of a film element corresponding to the branch associated with the light-emitting structure containing the second section of the ensemble of layers of the light-emitting structure, a layer that acts as a mirror and heat sink, 10, thick film element is set from 7,0 × 10 ^-8 m - in the area of the film element corresponding loop to 0,604 × 10 ^-6 m - in the area of the film element, lying on the relevant substrate branch.

The layer patterns of the film element are formed lithographically, after the ensemble of layers of the light-emitting structure and the formation of layers for the manufacture of the insulating layer 9 are made — undoped layers: Al _0.6 Ga _0.4 As 100 nm thick, GaAs 100 nm thick. Using lithography, an insulating layer 9 is made on the area of the portion of the film element corresponding to the branch lying on the substrate. When forming the insulating layer 9, first, lithography is given its pattern and simultaneously the pattern of the contact layer 12, then hot treatment (at a temperature of 60 ÷ 70 ° C) is carried out in H ₂ O ₂ for about 1 minute to oxidize the surface. Next, on the thus obtained insulating layer 9, the first electrode is made — the contact layer 12. Metallization is carried out by sputtering of Ni / Al / Au layers with a thickness of 2/20/100 nm, respectively. Then carry out the "explosion".

Next, lithography of relatively undoped layers is carried out: Al _0.6 Ga _0.4 As 100 nm thick, GaAs 100 nm thick, etched. Etching to a stop layer is carried out in H ₃ PO ₄ : H ₂ O ₂ : H ₂ O (3: 1: 50) for about 2 minutes, then in HF: H ₂ O (1:10) for about 1 minute to remove the stop layer (as a stop layer, an AlGaAs layer with an Al content of at least 40% is used).

Then a gap is made and the indicated sections are obtained by lithography and etching a window with a depth of up to a layer ensemble with built-in mechanical stresses, reaching the distance between the sections equal to πR, R is the radius of curvature of the loop, or another distance, which further ensures the location of the light-emitting structure with the layer performing the function of the mirror and heat sink, in contact with the first electrode, which is obtained on the insulating layer by applying a contact layer of metal using lithography. Lithography sets the pattern of the portion of the film element corresponding to the loop. Etching is carried out first in H ₃ PO ₄ : H ₂ O ₂ : H ₂ O (3: 1: 50) for about 4 minutes, then in HF: H ₂ O (1:10) for about 1 minute to remove the feet -layer (an AlGaAs layer with an Al content of at least 40% serves as a stop layer).

Then set the general shape, the contour of the multilayer film element. A lithography is carried out to specify the general form of the meso structure. Etching to substrate 1 is carried out in H ₃ PO ₄ : H ₂ O ₂ : H ₂ O (3: 1: 50) for about 6 minutes.

Then, a second electrode is produced that is in contact with the substrate 1. It is made from the rear side of the substrate 1 as a part of layers of AuGe / Ni / Au with a thickness of 40/20/200 nm, respectively. These layers are sprayed onto the non-working side of the substrate 1 and a high-temperature treatment is carried out for melting at a temperature of 400 ° C for 10 minutes in an inert gas atmosphere.

After completing the gap and obtaining the indicated areas by lithography and etching the window to the depth of a layer ensemble with built-in mechanical stresses, the latter is additionally metallized by spraying metal into the windows, using lithography. Lithography is carried out, AuGe / Ni / Au is deposited with a thickness of 40/20/200 nm, respectively, and an “explosion” is carried out.

Next, make a layer that performs the function of a mirror and heat sink, 10 of metal, using lithography. A lithography is carried out specifying the pattern of the layer. The oxide in HCl: H ₂ O is removed from the surface of the exposed heavily doped layer in about 1 minute. Metallization is carried out in the composition of Ti / Au layers with a thickness of 20/100 nm, respectively. Then carry out the "explosion".

Then, the film element is partially separated from the substrate 1, leaving it connected in the region of the film element corresponding to the branch lying on the substrate, on which the section of the ensemble of layers of the light-emitting structure is made, covered with an insulating layer 9 with the first electrode made on it, transforming the layer under the action of built-in mechanical stresses ensemble with built-in mechanical stresses in a U-shaped suspension with a loop and the location of the resulting light-emitting structure from the ensemble of layers of light-emitting st uktury between the branches, by separating the film member from the substrate 1 ensemble revolution emitting layers with a layer structure, performing a mirror function and a heat sink 10 and placing the latter in contact with the first electrode to form a rigid connection due to the sticking effect in bringing into contact layers. The film element is separated from the substrate by selective side etching of the sacrificial layer from the side of the portion of the film element corresponding to the branch associated with the light-emitting structure. The sacrificial layer is etched in HF, then washed and dried. Thus, the light-emitting structure is an ensemble of layers of the light-emitting structure inverted relative to the substrate.

To implement the manufacturing method, a set of five photomasks (masks for optical lithography) was made. Designing was performed using the Automatic Optical Mask Drawing Program (FERAM). Templates made of Fe ₂ O ₃ on a glass base. The profiles of stressed pseudomorphic heterostructures with GaAs quantum wells (wavelength of emitted light about 850 nm) on an n ⁺ -GaAs substrate and p ⁺ -GaAs substrate, as well as with InGaP quantum wells (wavelength of emitted light about 650 nm) n ⁺ -GaAs substrate.

Claims (21)

1. An LED containing a substrate, a light-emitting structure and a first electrode located on the working side of the substrate, a second electrode in contact with the substrate, characterized in that the conductive U-shaped suspension for the light-emitting structure lying on the working side of the substrate is lying on a substrate with one branch and rigidly connected with it, between the branches in the direction from the substrate, a sequence of elements rigidly connected with branches is formed, formed from successively rigidly connected th insulating layer, the first electrode layer and performing a mirror function heat sink, the light emitting structure. 2. The LED according to claim 1, characterized in that the U-shaped suspension for the light-emitting structure is made on the basis of a layered ensemble with built-in mechanical stresses, the branch lying on the substrate is formed by a section of a layered ensemble with built-in mechanical stresses located in a flat state due to the connection with the working side of the substrate with the substrate, on the other hand, with an insulating layer located between the branches and the first electrode, the other branch is formed by a section of a layer ensemble with built-in mechanical which is in a flat state due to the connection with the light-emitting structure located between the branches and the layer that acts as a mirror and heat sink, and the connecting branch of the loop, made electrically conductive, is formed due to bending under the action of built-in mechanical stresses of the section of the layer ensemble with built-in mechanical stresses, free from bonds with the elements holding it in a flat state, the first electrode is made in the form of a contact layer, the second electrode in contact with the base Coy, adapted rear side of the substrate. 3. The LED according to claim 2, characterized in that between the insulating layer and the branch of the U-shaped suspension lying on the substrate, formed by a section of the layer ensemble with built-in mechanical stresses that are in a planar state due to bonds with the substrate, the insulating layer and the first electrode , an ensemble of layers of a light-emitting structure is made, the light-emitting structure is made on the basis of an ensemble of layers of a light-emitting structure, suspended on a loop with an abutment of a layer acting as a mirror and heat sink, which is equipped with vetoizluchayuschaya structure, the contact layer to implement a rigid mechanical and electrical connections. 4. The LED according to any one of claims 1 to 3, characterized in that in the composition of the light-emitting structure is made of the first and second layers-plates, respectively, of the first and second types of conductivity and the active layer located between them, undoped, and the second layer-lining adjacent to the layer that acts as a mirror and heat sink. 5. The LED according to claim 3, characterized in that the ensemble of layers of the light-emitting structure is made up of the first and second layers-plates, respectively, of the first and second types of conductivity with the active layer located between them, undoped. 6. The LED according to claim 1, characterized in that the substrate is made of GaAs p ⁺ or n ⁺ -type conductivity. 7. The LED according to claim 2 or 3, characterized in that a sacrificial layer is made between the substrate and the branch lying on the substrate, formed by a section of the layer ensemble with built-in mechanical stresses that are in a planar state due to bonds with the substrate, the insulating layer and the first electrode from AlAs p ⁺ or n ⁺ -type conductivity, providing a rigid connection with the substrate. 8. The LED according to claim 1 or 2, characterized in that the U-shaped suspension for the light-emitting structure, which is transparent to the emitted light, is made on the basis of a layer ensemble with built-in mechanical stresses, namely, it is made up of a mechanically stressed layer of InGaAs p ⁺ or n ⁺ -type of conductivity and the GaAs layer of p ⁺ or n ⁺ -type of conductivity associated with it, and a loop made of electrically conductive is metallized with AuGe / Ni / Au layers 40/20/200 nm thick or Zn / Au layers thick , respectively, 20/200 nm. 9. The LED according to claim 5, characterized in that the first layer-lining of the first conductivity type is made of AlGaInP or AlGaInAs p or n-type conductivity, the active layer is made of unalloyed AlGaInP or AlGaInAs, and the second layer-lining of the second conductivity type is made of AlGaInP or AlGaInAs n or p-type conductivity. 10. The LED according to claim 3, characterized in that between the ensemble of layers of the light-emitting structure and the insulating layer, between the light-emitting structure and the layer acting as a mirror and heat sink, a protective layer of GaAs p ⁺ conductivity type is made. 11. The LED according to any one of claims 1 to 3 or 10, characterized in that the insulating layer is made of SiO ₂ or Si ₃ N ₄ with a thickness of about 0.2 microns. 12. The LED according to claim 1 or 2, characterized in that the first electrode is made in the form of a contact layer composed of Ti / Au layers with a thickness of 40/200 nm, respectively, the second electrode in contact with the substrate is made up of AuGe / Ni layers / Au thickness, respectively, 40/20/200 nm or layers of Zn / Au thickness, respectively, 20/200 nm. 13. The LED according to any one of claims 1 to 3, characterized in that the layer acting as a mirror and heat sink is formed as a part of Ag / Au layers with a thickness of 20/200 nm, respectively. 14. A method of manufacturing an LED, which consists in obtaining a light-emitting structure, the first electrode located on the working side of the substrate, form a second electrode in contact with the substrate, characterized in that the multilayer film element connected to the substrate is first formed with the use of materials, the geometry of its layers and built-in mechanical stresses, providing a light-emitting structure, and electrically conductive, transparent for emitted with a U-shaped suspension for a light-emitting structure lying on the substrate with one branch and rigidly connected to the substrate, and the other branch connected with the light-emitting structure with hanging on a loop, while in the stage of formation of the film element, a sequential layer ensemble with built-in mechanical stresses, an ensemble of layers light-emitting structure, in relation to the latter, two sections are formed, located relative to each other with a gap depth to a layer ensemble with built-in mechanical stresses, thereby obtaining sections of the film element — corresponding to the branch lying on the substrate, corresponding to the branch associated with the light-emitting structure, and corresponding to a loop, on the portion of the film element corresponding to the branch lying on the substrate, the section of the ensemble of layers of the light-emitting structure is covered with an insulating layer on which to make a first electrode, in a portion of a film element corresponding to a branch associated with a light-emitting structure containing a second portion of an ensemble of light-emitting layers of the teaching structure, a layer is made that acts as a mirror and heat sink, then the film element is partially separated from the substrate, leaving it connected in the area of the film element corresponding to the branch lying on the substrate, on which the section of the ensemble of layers of the light-emitting structure is made, covered with an insulating layer made on it the first electrode, transforming under the action of built-in mechanical stresses a layered ensemble with built-in mechanical stresses into a U-shaped suspension with a loop and position iem obtained from the ensemble of emitting structure of the light emitting structure layers between the branches, by separating the film member from the substrate, the light-emitting layers revolution ensemble with a layer structure, performing a mirror function and a heat sink, and placing the latter in contact with the first electrode to form a rigid connection. 15. The method according to 14, characterized in that at the stage of formation of the film element before the manufacture of the layer ensemble with built-in mechanical stresses, a AlAs sacrificial layer with a thickness of 10 to 30 nm is made on the substrate, a GaAs substrate is used as the substrate, the film element is separated from substrate by selective lateral etching of the sacrificial layer from the side of the portion of the film element corresponding to the branch associated with the light-emitting structure. 16. The method according to 14, characterized in that at the stage of formation of the film element a layer ensemble with built-in mechanical stresses is manufactured, which provides an electrically conductive, U-shaped suspension transparent to the emitted light for the light-emitting structure, as part of a mechanically stressed layer of InGaAs p ⁺ -type of conductivity and the associated layer of GaAs p ⁺ -type of conductivity, and the ensemble of layers of the light-emitting structure is made up of the first and second layer-wafers with an active layer, the first layer is made of AlGaInP or AlGaInAs of the first type of conductivity - p-type, the active layer is made of undoped AlGaInP or AlGaInAs, respectively, or the active layer is made of quantum wells, respectively, containing InGaP or GaAs, and the second layer is respectively, they are made of AlGaInP or AlGaInAs of the second type of conductivity - n ⁺ -type, while the first layer-lining is placed on a layer of GaAs p ⁺ -type of conductivity of a layer ensemble with built-in mechanical stresses, the second layer-lining is provided with a protective layer of GaAs n ⁺ type and conductivity, on which the insulating layer and the layer acting as a mirror and heat sink are performed. 17. The method according to 14, characterized in that at the stage of forming the film element with the manufacture of the ensemble of layers of the light-emitting structure and in relation to the latter, the formation of two sections located relative to each other with a gap, depth to the layer ensemble with built-in mechanical stresses, with obtaining sections of the film element — the corresponding branch lying on the substrate, the corresponding branch associated with the light-emitting structure, and the corresponding loop, coated on the film element section nta corresponding to the branch lying on the substrate, the portion of the ensemble of layers of the light-emitting structure of the insulating layer on which the first electrode is made, with the manufacture of a film element on the portion corresponding to the branch associated with the light-emitting structure containing the second portion of the ensemble of layers of the light-emitting structure, a layer acting as a mirror and heat sink, the thickness of the film element is set from 6 × 10 ^-8 m - in the area of the film element corresponding to the loop, up to 10 ^-5 m - in the area of the film element, respectively of the branch lying on the substrate, the patterns of the layers of the film element are formed lithographically, after the ensemble of layers of the light-emitting structure is made using lithography, an insulating layer is made on the area of the portion of the film element corresponding to the branch lying on the substrate, then a gap is made and the indicated sections are obtained by lithography and window etching depth to a layered ensemble with built-in mechanical stresses, with reaching a distance between sections equal to πR, R is the radius of curvature of the loop, whether there is another distance, which further ensures the location of the light-emitting structure with the layer that acts as a mirror and heat sink, in contact with the first electrode, which is obtained on the insulating layer by applying a contact layer of metal using lithography, a layer that performs the function of a mirror and heat sink is also made, metal, using lithography, in addition, after performing the gap and obtaining the indicated areas by lithography and etching the window to a depth of layer ensemble with GOVERNMENTAL mechanical stresses, the latter further metallized by sputtering in the metal box, using lithography. 18. The method according to 14 or 17, characterized in that the insulating layer is made of SiO ₂ with a thickness of about 0.2 microns. 19. The method according to p. 14 or 17, characterized in that the layer that performs the function of a mirror and heat sink is made up of Ag / Au layers with a thickness of 20/200 nm, respectively. 20. The method according to 17, characterized in that the layered ensemble with built-in mechanical stresses in the area corresponding to the loop is additionally metallized by spraying metal into the windows, using lithography, with AuGe / Ni / Au layers 40/20 thick, respectively / 200 nm or Zn / Au layers with a thickness, respectively, 20/200 nm. 21. The method according to 14, characterized in that the first electrode is made in the form of a contact layer in the composition of Ti / Au layers with a thickness of 40/200 nm, respectively, the second electrode in contact with the substrate is made from the rear side of the substrate in the composition of AuGe layers / Ni / Au with a thickness of 40/20/200 nm, respectively; or Zn / Au layers with a thickness of 20/200 nm, respectively.

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