RU2154863C1 - Method for toroidal recording and reading of information, memory register and memory unit, which implements said method - Google Patents

Abstract

FIELD: electronic equipment, magnetic recording, in particular, operations with heavy data arrays. SUBSTANCE: toroidal objects, which are made from magnetic material, are arranged into structures, which have closed magnetic flux with specific rotation direction. When alternative information is stored, rotation direction of closed magnetic flux in respective magnetic objects changes under influence of intersecting biasing and back magnetization fields, which correspond in time and level. When information is read, method involves application of alternating bias field to information and reference objects and detecting output signals, which response profile determines information unit, which is stored in information object. Memory register consists of toroidal member, in which vortex magnetic field is produced. Bias bus is located outside of toroidal member. It generates magnetic field in toroidal member, which is perpendicular to vortex field. This results in possibility to design random access memory unit with multilayer structure and recording density of 100 Mb per sq. cm in non-volatile layer, which provides durable information storage. EFFECT: increased functional capabilities. 15 cl, 18 dwg

Description

 The invention relates to the field of magnetic recording and reproduction of information and can be used in technology with reversible digital storage devices with high-density recording for working with large data arrays and in other electronic devices.

 In modern computer technology, as well as in many other electronic devices, one of the main units are memory devices, the effectiveness of which is characterized by the following main parameters: the amount of stored information and recording density; access time (the duration of a full cycle of accessing information stored at an arbitrary address); non-volatility storage (the ability to save information when the power is off); longevity of memory; the cost of manufacturing in mass production of 1 MB of memory.

 Currently, optical disks exceed all other memory devices in the amount of stored information (from 128 to 2000 MB), but they are either not suitable for overwriting, or the recording and playback time of information on them is very long (for example, the access time is 30-50 ms ) Magnetic hard drives can also store a large amount of information (up to 10 GB), which can be overwritten. The access time is reduced to 8-15 ms, however, the indicated time is still very long. Both types of memory devices (optical disks and magnetic hard drives) are non-volatile.

In "dynamic" memory devices with random access to information, a charged capacitor is used as an information storage element (memory cell). These devices are made in the form of integrated circuits, so they can provide a very short access time of about 10-50 ns, and the recording density is 3-12 MB / cm ² .

 However, dynamic memory devices are non-volatile and require periodic rewriting (regeneration).

In devices of "static" memory, a semiconductor gate in a transistor assembly is used as an information storage element (memory cell). Such devices are difficult to manufacture and are used only as a cache memory, that is, as a clipboard between slow and fast memory devices. The disadvantages of “static” memory devices are limited non-volatility, relatively low recording density (1-2 MB / cm ² ) and high cost.

Recently, work is underway to create memory devices that would not have the above drawbacks and at the same time provide a high recording density (of the order of 100 MB / cm ² ), short access time (of the order of 10 ns), non-volatility property, unlimited number of rewrite cycles and reproduction of information and would have low cost. The so-called "ferroelectric" and "magnetic" memory devices most closely meet these requirements.

 As you know, a large class of polycrystals, called ferroelectrics, has the ability to long-term storage of the state of a given electrical polarization. This property allows them to be used in memory cells, replacing the dielectric located between the capacitor plates with ferroelectric in the “dynamic” memory devices, due to which the “dynamic” memory devices acquire the property of non-volatility.

 However, “ferroelectric” memory devices have a limited lifetime, since even after a limited number of cycles of polarization reversal, the ferroelectric begins to age due to the accumulation of a parasitic electric charge in the crystal, while the absolute value of the electric polarization of the memory cell decreases, and it becomes less controllable and eventually completely loses the properties of memory (US Patent N 5768182, MKI H 01 L 31/062 (365/145), 1998).

 A similar disadvantage is memory devices created on the basis of other high-quality dielectrics, since the fact of the existence of electric charges inevitably leads to a gradual aging of the dielectric memory due to leakage charge (US Patent N 5796670, G 11 C 13/00 (365-228), 1998).

 A known method and device with the so-called "magnetic" memory with random access to information, the recording and reproduction of information in which are based on the property of the conductors to change the electrical resistance when a magnetic field is applied (anisotropic or giant magnetoresistance effect).

 The device either contains separate circuits for recording and reproducing information, or, when using conductors with giant magnetoresistance, multilayer structures in which each memory cell contains separate elements for recording, storing and reproducing information. Such a memory cell can withstand an almost unlimited number of rewriting cycles, which is explained by the stability of the so-called "exchange" forces of interaction of atomic electrons and the absence of magnetic charges in nature, which would lead to the depolarization of magnetic dipole moments of information carriers (US Patent N 5587943, MKI G 11 C 11/15 (365/158), 1996).

 The disadvantage of this method is that the effect of anisotropic magnetoresistance is manifested only against the background of a very large ohmic resistance of the conductors. When using the same circuit both for recording and for reproducing information, a large current is passed through the conductor, which leads to the manifestation of the electromigration effect (the transfer, together with the electric current, of a part of the current bus material), which leads to the loss of operability of the memory cell.

 The disadvantages of the device that implements the above method are the low recording density and the complexity of its manufacture, and when using conductors with giant magnetoresistance, a large temperature dependence of the operation of the device appears, that is, lower temperatures are preferred.

 A memory device (magnetic transistor) is known whose operation is based on the use of spin-dependent effects of charge transfer in a magnetic field (the effect of tunneling electron transfer). In a magnetic transistor, the charge transfer between two layers of a metal ferromagnet separated by a dielectric layer is controlled by a magnetic field (US Patent No. 5650958, MKI G 11 B 5/127 (365/173), 1997).

 The disadvantage of this technical solution is the dependence of the operation of the memory device on temperature, that is, its heating during prolonged operation leads to instability of the hysteresis curves.

 In addition, the device is not technologically advanced in its manufacture, since it requires a large multilayer (about ten layers of dissimilar materials, including dielectrics).

 A known method and memory device for its implementation, based on the use of longitudinally or transversely located on the carrier of magnetic particles (domains) having magnetic dipole moments.

In the memory device for recording and reproducing information, the relative movement of the carrier with magnetic particles and the magnetic head is used, which during recording generates and during playback registers a magnetic field that is uniform in direction and variable in magnitude. The recording density in this case is provided at the level of 10 ⁸ - 10 ⁹ bit / cm ² (Gitlits MV Magnetic recording of signals. - M; Radio and communications, 1990, p. 232).

 The disadvantages of the above technical solution are restrictions on the recording density due to the hard adhesion of magnetic particles (domains) during compaction, the possibility of loss of information when exposed to external fields, and the use of nodes mechanically moving at high speeds when recording and reproducing information, and therefore, is limited media usage time and memory device reliability.

 A known method of magneto-toroidal recording and reproduction of information, based on the interaction of magnetized carrier particles concentrically closed in toroidal configurations (aggregates of magnetic carrier particles), with a control vortex magnetic field, which, when recording information, changes the orientation of the moments of magnetic particles, and when reproducing information, records parameters of the electric field excited by moving aggregates of magnetic particles of the carrier (Dubovik V.M., Martsenyuk A.M., Martsenyuk N.M. Peremagnich aggregates of magnetic particles and use a vortex field toroid for information recording. Preprint JINR R17-92-541, 1992).

 The two magnetization states of such aggregates, taken as “0” and “1” in the digital code, differ in opposite (clockwise or counterclockwise) directions of the magnetization vortex and correspondingly oppositely oriented vectors of toroidal moments.

The packing density of aggregates of particles with toroidal magnetization is practically limited only by their size due to the weak interaction between the aggregates. Nanotechnology methods make it possible to obtain one-dimensional ferromagnetic particles with sizes of 1-10 nm and more with a saturation magnetization of the order of 300 G. For example, an aggregate of four such particles has a toroidal magnetization with a circular magnetic field strength between aggregate particles of about 10 ³ Oe, which is sufficient for the stability of the aggregate and, thus, for reliable long-term storage of information. Since each such unit can store 1 bit of information, and the area of the unit is 10-100 nm ² , the recording density will reach 10 ¹² - 10 ²³ bit / cm ² .

 The disadvantage of this technical solution is its difficulty in implementation, since when reproducing information in order to read a separate bit of information, it is difficult to quickly reach the reading node relative to the storage medium of information, and when recording information, it is difficult to reach the toroidal moment necessary for the possibility of vortex magnetization reversal of the unit by an alternating electric by the field.

 In addition, the use of a flat capacitor to create a vortex magnetic field does not allow for a high degree of localization of the vortex field within the size of one unit having nanometric dimensions.

 The closest analogue to the invention for the problem being solved is a method of toroidal recording and reading of information, according to which toroid-like configurations are formed in a material, for example, magnetic, each of which has a closed magnetic flux of a certain twist direction, when writing an alternative information unit, the twist direction of the closed magnetic flux is changed in corresponding toroidal configurations (RF Patent N 2114466, MKI G 11 B 5/00, 5/852, 1998).

 However, the known method does not allow for random access to memory, has a relatively long access time, and when reading information, especially at high frequencies, it requires a difficult process of phase detection.

 The closest analogue to the invention is a memory cell containing a toroid-like element made of magnetic material and located in an insulating medium (RF Patent N 2114466, MKI G 11 B 5/00, 5/852, 1998).

 However, the known device cannot provide the required recording density of information and speed and is technologically laborious.

 The closest analogue to the invention is a memory device that implements the above method of recording and reading information that contains toroid-like elements, means for magnetization reversal of toroid-like elements and an electronic control unit (RF Patent N 2114466, MKI G 11 V 5/00, 5/852, 1998 )

 However, the known device cannot provide the required recording density of information and speed and is technologically laborious.

 In addition, the head of recording and reading information is a matrix with many nanometric needles fixed in a dielectric, and requires a precision device that provides its relative movement and movement of the carrier of toroidal magnetic configurations.

 The objective of the invention is to provide a method of recording and reading information, a memory cell and a memory device for implementing the method, which will provide mass production of relatively cheap, durable, non-volatile memory devices with a large amount of stored information, high recording density, low access time and high speed.

 The essence of the method of toroidal recording and reading of information lies in the fact that toroid-like configurations are formed from a material, for example, magnetic, each of which has a closed magnetic flux of a certain twist direction. Structures are formed from toroidal configurations, each of which consists of at least one information and at least one reference configuration.

 When writing a unit of information within the same structure, the direction of twisting of the closed magnetic flux in the corresponding toroidal configurations is changed and a time and magnitude effect is influenced on the information configuration by mutually intersecting magnetizing and magnetizing magnetizing alternating magnetic fields.

 When reading a unit of information within the same structure, the information and reference configurations are affected by an alternating magnetizing field, the output signals of the information and reference configurations of the structure are detected, and the nature of their responses determines the value of the information unit recorded in the information configuration.

 It is possible to record a unit of information within the same structure by acting on the information configuration with one or more pulses of a magnetizing magnetizing field under constant exposure to a magnetizing magnetic field.

 In addition, toroidal configurations can be made of a material having superconductivity, for example, high-temperature superconducting ceramics.

 The essence of the invention lies in the fact that in the memory cell containing a toroid-like element made of magnetic material and located in an insulating medium, means have been introduced for magnetization reversal of the toroid-like element by creating a spatio-temporal magnetic field configuration in its volume, including at least one conductive signal bus passing through the axial hole of the toroid-like element and creating a vortex magnetic field in the toroid-like element, and at least one current a leading magnetizing bus located outside the toroid-like element and creating a magnetic field in the toroid-like element transverse to the vortex.

 If the toroid-like element in the memory cell is made of electrically conductive magnetic material, then the toroid-like element and the conductive magnetizing and signal buses are isolated from each other, and when the toroid-like element is made of electrically conductive magnetic material, the conductive magnetizing bus can be located directly on the toroid-like element.

 The conductive magnetizing bus of the memory cell can be made in the form of a loop covering a toroid-like element.

 In the memory cell, a toroid-like element can be installed between two conductive magnetizing buses located opposite to each other or between four conductive magnetizing buses, the first two of which are located opposite each other above the equatorial plane of the toroid-like element, and the second two are opposite to each other under the equatorial the plane of a toroid-like element, wherein the conductive signal lines or at least one of them are located in both the first and second cases ae, transversely with respect to the conducting biasing busbars.

 In addition, in the memory cell, the part of the toroid-like element adjacent to the conductive magnetizing bus can be made of magnetically rigid material, for example ferrite, and the magnetically closing part can be made of magnetically soft material, for example permalloy, while the dielectric material of which the insulating material is made medium, silica can be used.

 The invention also consists in the fact that information memory cells and at least one reference memory cell, a signal generator, a magnetization current generating unit (BFTP) are introduced into a memory device containing toroid-like elements, a means for magnetization reversal of toroid-like elements and an electronic control unit ), a unit for generating information recording currents (BFTZI), an initialization unit, an address decoder, a unit for detecting devices, and a controller.

 Each of the information memory cells and each of the reference memory cells includes said toroid-like element and means for magnetization reversal of toroid-like elements, including at least one conductive signal bus and at least one conductive magnetizing bus. Information memory cells are grouped into blocks providing word-by-word random access to information, and blocks of information memory cells form a memory matrix having K rows and L columns, where K is the number of conductive magnetizing buses, and L is the number of conductive signal buses.

 Each of the K conductive magnetizing buses of the information memory cells and the conductive magnetizing bus of each or at least one of the reference memory cells are connected to the corresponding outputs of the BFTP, each of the L conductive signal buses of the information memory cells is connected to the corresponding output of the BFTP, and the conductive signal bus each or at least one of the reference memory cells is connected to the output of the initialization block.

 The output of the signal generator is connected to the signal inputs of the BFTP, BFTZI and the initialization unit, the first and second outputs of the address decoder are connected respectively to the K address inputs of the BTPT and the L address inputs of the BFTZI.

 Each of the L conductive signal buses of the information memory cells and the conductive signal bus of each or at least one of the reference memory cells are connected to the corresponding inputs of the block of detecting devices, L outputs of which are connected to the information inputs of the electronic control unit, outputs of the address codes and data outputs which are connected respectively with the inputs of the address decoder and with the L inputs of the BFTZI data, the control output of the initialization mode of the electronic control unit is connected to the same Odom initialization unit.

 The inputs of the address codes, data inputs / outputs and inputs and outputs of the control signals of the electronic control unit are connected to the corresponding outputs and inputs and outputs of the controller, and the information input of the initialization unit is a signal of a logical unit signal.

 The reference memory cells can be located differently relative to the information memory cells, for example, each of the reference memory cells (at least one reference memory cell) and the corresponding information memory cell located next to it can be located on one side of the conductive magnetizing bus or each of the reference memory cells (at least one reference memory cell) can be located between two corresponding information memory cells that are located on one side of conductive magnetizing bus or each of the reference memory cells (at least one reference memory cell) can be arranged specularly to the corresponding information storage cell relative to the axial line of the magnetizing conductor bus.

 In addition, the reference memory cells can be made in the form of a reference matrix, the geometric dimensions of which are identical to the geometric dimensions of the memory matrix, both matrices being located symmetrically relative to the BFT and the block of detecting devices.

 The invention is illustrated by drawings.

In FIG. 1 is a graphical illustration of a method of recording and reading information;
in FIG. 2 shows the structure of a memory cell;
in FIG. 3 and FIG. 4 shows memory cells in section along the equatorial plane of a toroid-like element made respectively of electrically conductive and electrically non-conductive magnetic material;
in FIG. 5 shows a memory cell in section along the equatorial plane of a toroid-like element with a conductive magnetizing bus made in the form of a loop;
in FIG. 6 shows a memory cell in section along the equatorial plane of a toroid-like element made of various magnetic materials;
in FIG. 7 shows a memory cell in section along the equatorial plane of a toroid-like element with two conductive magnetizing buses;
in FIG. 8 shows a memory cell with four conductive magnetizing buses;
in FIG. 9 shows a memory cell in section along the meridian plane of a toroid-like element with four conductive magnetizing buses;
in FIG. 10 shows a functional block diagram of a memory device;
in FIG. 11 - FIG. 13 shows the schematic diagrams of the elements BFTTP, BFTZI and initialization unit, respectively;
in FIG. 14 - FIG. 16 schematically shows the location of the information memory cell and the reference memory cell with respect to each other and with respect to the conductive magnetizing bus;
in FIG. 17 and FIG. 18 shows timing diagrams of the operation of the memory device in the information reading mode.

 The memory cell (Fig. 2 - Fig. 5) contains a toroid-like element 9, a conductive signal bus 10, a conductive magnetizing bus 11 and an insulating medium 12.

 The memory cell (Fig. 6) contains a toroidal element 9, consisting of two parts 9a and 9b, a conductive signal bus 10, a conductive magnetizing spike 11 of the insulating medium 12.

 The memory cell (Fig. 7) contains a toroidal element 9, a conductive signal bus 10, two conductive magnetizing buses 11a 11b and an insulating medium 12.

 The memory cell (Fig. 8 and Fig. 9) contains a toroid-like element 9, a conductive signal bus 10, four conductive magnetizing buses 11a, 11b, 11e, 11d (an insulating medium is not shown in the drawings).

 In the memory cells, the toroid-like element 9 can be made of various magnetic materials, which determines its specific location relative to the magnetization reversal means, which creates a spatio-temporal configuration of the magnetic field in the volume of the toroid-like element 9.

 The means for magnetization reversal includes at least one conductive signal bus 10 passing through the axial hole of the toroid-like element 9 and creates a vortex magnetic field in the toroid-like element 9, and at least one conductive magnetizing bus 11 located outside the toroid-like element 9 and creates toroid-like element 9 is a magnetic field transverse to the vortex.

 The conductive signal and conductive magnetizing buses of the memory cell are made of electrically conductive material, for example silver, the insulating medium is made of dielectric material, for example silicon oxide, and the toroid-like element 9 is made of magnetic material, while if the magnetic material is electrically conductive, then the toroid-like element 9 and conductive the signal and magnetizing buses 10 and 11 are isolated from each other and are located in an insulating medium, such as silicon oxide (figure 3), and if the magnetic material Since the electrically conductive or upper part 9a of the toroid-like element 9 is made of magnetically rigid material, for example ferrite, and the magnetically closing part 9b is made of magnetically soft material, for example permalloy, the conductive magnetizing bus 11 can be located directly on or on the toroid-like element 9 (Fig. 4) the upper part (Fig. 6).

 The conductive magnetizing bus 11 can be made in the form of a loop covering a toroid-like element 9 (Fig. 5). The toroid-like element 9 can be placed between two conductive magnetizing buses located opposite to each other 11a, 11b (Fig. 7) or between four conductive magnetizing buses 11a, 11b, 11c, 11d, the first two of which 11a, 11b are located opposite to each other above the equatorial plane of the toroid-like element 9, and the second two 11c, 11d are located opposite to each other under the equatorial plane of the toroid-like element 9 (Fig. 8 and Fig. 9), while the conductive signal lines 10 or at least one of them is located transversely with respect to the conductive biasing busbars.

 The memory device (Fig. 10) comprises a memory matrix 13 formed by information memory cells including toroid-like elements 14, conductive magnetizing buses 15 and conductive signal buses 16, a reference memory cell including toroid-like elements 17, conductive magnetizing bus 15 and conductive signal bus 18 , a signal generator 19, a magnetization current generating unit (BFTP) 20, an information recording current generating unit (BFTZI) 21, an initialization unit 22, an address decoder 23, a detecting unit 24 stroystv, the electronic control unit 25 and a controller 26.

 In FIG. 14 - FIG. 16 are indicated: 34 - information memory cell, 35 - reference memory cell and 36 - conductive magnetizing bus.

 In the memory device (Fig. 10), information memory cells are grouped into blocks that provide word-by-word random access to information, and the blocks of memory cells form a memory matrix 13 having K rows and L columns, where K is the number of conductive magnetizing buses 15, and L is the number of conductive information buses 16.

 Each of the K conductive magnetizing buses 15 of the memory matrix 13 and the conductive magnetizing bus 15 of the reference memory cell are connected to a corresponding output of the BFTU 20, each of the L conductive signal buses 16 of the information memory cells is connected to the corresponding output of the BFTZI 21, and the signal bus 18 of the reference memory cell is connected with the output of block 22 initialization. The signal inputs of the BFTP 20, BFTZI 21 and the initialization unit 22 are connected to the output of the signal generator 19. The first and second outputs of the address decoder 23 are connected respectively to the K address inputs of BFTTP 20 and to the L address inputs of BFTZI 21.

 Each of the L conductive signal buses 16 of the memory information cells and the conductive signal bus 18 of the reference memory cell are connected to the corresponding inputs of the detecting device unit 24, the L outputs of which are connected to the information inputs of the electronic control unit 25, the outputs of the address codes and the data outputs of which are connected respectively to the inputs decoder 23 addresses and with L inputs of data BFTZI 21. The control output of the initialization mode of the electronic control unit 25 is connected to the same input of the initialization unit 22 tion.

 The inputs of the address codes, data input-output and input-output of the control signals of the electronic control unit 25 are connected to the corresponding outputs and inputs of the controller 26, and the information input of the initialization unit 22 is a logical unit signal input.

 The reference memory cells 35 (Fig. 14 - Fig. 16) can be located differently with respect to the memory information cells 34 and the bias bus 36. Each of the memory reference cells 35 can be mirrored to the corresponding memory information cell 34 relative to the axial line of the bias bus 36 or each of the reference memory cells 35 and the corresponding adjacent information memory cell 34 can be located on one side of the conductive magnetizing bus 36, or and each of the reference memory cells 35 may be located between two respective memory information cells 34, which are located on one side of the conductive magnetizing bus 36.

 The reference memory cells can be made in the form of a reference matrix, the geometrical dimensions of which are identical to the geometrical dimensions of the memory matrix, in which case both matrices are located symmetrically with respect to the magnetization current generating unit (BFTP) and the detection device unit.

 The implementation of the method of recording and reading information is illustrated in the graphic illustration shown in FIG. 1, on which are indicated: 1 - information configuration, 2 - reference configuration, 3 - direction of swirling of the closed magnetic flux, 4, 5 - conductive signal buses, 6 - conductive magnetizing bus, 7 - current direction of current in the bus 6, 8 - direction magnetizing magnetic field. A, B and C, D - points on tires 4 and 5, respectively.

 The method of toroidal recording and reading of information is as follows.

 Toroid-like configurations are formed in the material, for example, ferromagnetic, each of which has a closed magnetic note of a certain twist direction, of which a structure is formed (Fig. 1), which consists of an informational toroidal configuration 1 and a reference toroidal configuration 2 having the same direction 3 of the closed magnetic flow (to simplify the implementation of the method is disclosed on one structure).

 The information and reference toroidal configurations, respectively 1 and 2, are magnetized so that the magnetic flux is closed inside them and has a certain twist direction, while the toroidal configuration can be in two magnetization states that differ in the direction of magnetic flux (clockwise or counterclockwise) that allows you to use it as a unit of information storage.

 When writing a unit of alternative information within the same structure, the twist direction 3 of the closed magnetic flux is changed, for which they produce a mutually intersecting magnetizing and magnetizing alternating magnetic fields that are coordinated in magnitude and time, for example, simultaneously. For this purpose, two buses are used: a conductive signal bus 4 and a conductive magnetizing bus 6, with bus 4 passing inside a toroid-like ring of information configuration 1, and bus 6 outside. Bus 4 creates a vortex magnetic field in the information configuration 1, which is directed along or against the direction of magnetization of the information configuration 1, and bus 6 creates a magnetic field directed perpendicular to the magnetization of the information configuration 1, while magnetization reversal of the information configuration 1 (change of direction of the toroidal moment) occurs.

 The recording of a unit of information within the same structure can also be carried out when one or more pulses of a magnetizing magnetic field is influenced by the information configuration 1 under constant exposure to a magnetizing magnetic field. The magnitudes of the magnetization reversal currents are determined by the coercive force of the magnetic material, and the magnetization reversal direction is determined by the direction of the current in the bus 4.

 To ensure the process of reading information, the reference configuration 2 in the initialization mode is magnetized with a certain predetermined direction 3 of twisting of the magnetic field, for which two buses are used: a conductive signal bus 5 and a conductive magnetizing bus 6, with bus 5 passing inside the toroidal ring of reference configuration 2, and the bus 6 is outside, with bus 6 being common to both information and reference configurations 1 and 2.

 When reading the information recorded in the information configuration 1, the information and reference toroid-like configurations 1 and 2 are exposed to an alternating magnetizing field, for which alternating current I of frequency ω is passed through bus 6 in direction 7, and periodic, with doubled frequency 2ω, oscillations of magnetic dipoles of particles of information configuration 1 and reference configuration 2, which causes the appearance of EMF induction of frequency 2ω between points A, B of bus 4 and between points C, D of bus 5. Phases of induced EMF od oznachno determined by the twist direction of the magnetic field in toroidoobraznyh configurations 1 and 2.

 Comparing the phases of the induced EMF information and reference configurations 1 and 2, determine the value (0 or 1) recorded in the information configuration 1 unit of information.

 The magnetization reversal rate of toroid-like configurations is mainly determined by the magnitude and rate of application of the magnetizing and magnetizing fields, the frequencies of which can reach 100 MHz. This allows you to ensure the process of recording a unit of information in 10 ns and thus meet the requirements of modern high-speed computing.

 The magnitudes of the magnetization reversal currents are bounded below by the value of the coercive force and the volume of magnetic material in a toroid-like configuration, which determine the energy costs - E for the magnetization reversal process, and from above - the energy of thermal motion - kT. To ensure the reliability of information storage under thermal influences, energy costs should be greater than the energy of thermal motion. Assuming that E = 5 kT, the value of the total current I in buses 4 and 6 at a voltage of 5 V will be 50 mA. At an average rate of recording information of 100 MB / s, the energy costs of magnetization reversal will be approximately 7 • 10 exp (-14) W. Given that the electrical resistance of buses 4 and 5 is not a limiting factor in the process of writing and reading information, the ohmic resistance loss is not more than 0.01 of the net power and, thus, the heat flux will have an allowable value of about 7 • 10 exp (-16) Tue

 The above description of the method of recording and reading information is also true when forming toroidal configurations from a material having superconductivity, for example, high-temperature superconducting ceramics.

 The memory cell works as follows.

 In the volume of the toroid-like element 9 of the memory cell (Fig. 2 and Fig. 3), a spatio-temporal configuration of the magnetic field is created for its magnetization reversal. For this purpose, at least one conductive signal bus 10 is used, passing through the axial hole of the toroid-like element 9 and creating a vortex magnetic field in it, and at least one conductive magnetizing bus 11 located outside the toroid-like element 9 and creating a magnetic field transverse to the vortex.

 According to the invention, the memory cells may have a different design, which is shown in FIG. 3 - FIG. 9 and described above.

 The memory cell provides operation both in the mode of recording information and in the mode of reading information, while reading information does not destroy the information recorded in the cell.

 The structural and functional execution of the memory cell allows its use as both information and reference memory cells.

 The memory device operates as follows.

 Information memory cells are grouped into blocks providing word-by-word random access to information, and the blocks of information memory cells form a memory matrix 13 having K rows and L columns, where K is the number of conductive magnetizing buses, and L is the number of conductive signal buses (Fig. 10 )

 In the initial state of the memory device, each of the toroid-like elements 14 of the information memory cells and the toroid-like element 17 of the reference memory cell have a closed magnetic flux of arbitrary twist direction. To ensure an unambiguous determination of the value of the read information, the device is initialized by writing to the toroid-like element 17 of the reference memory cell of a logical unit in the form of giving the closed magnetic flux a certain twist direction.

 The recording of information in the information cells of the memory matrix 13 memory is as follows. The signal from the output of the signal generator 19 is fed to the signal input of the BFTU 20, which contains (Fig. 11) K electronic keys 27, the first input of each of which receives a signal from the signal generator 19, and to the second input of each of the electronic keys 27 - signal one of the outputs of the decoder 23 addresses. The output of each of the electronic keys 27 is connected to the corresponding input of the multi-input logic element OR 28, the output of which and the outputs of each of the K electronic keys 27 are the (K + 1) output of the BFTU 20.

 Thus, in the BFTP 20, in accordance with one of the K addresses, corresponding K output signals are generated that are received on the corresponding conductive magnetizing buses 15, and an output signal is supplied to the conductive magnetizing bus 15 of the reference memory cell.

 The signal from the output of the signal generator 19 is also fed to the signal input BFZZI 21, which contains (Fig. 12) L groups, in each of which the signal from the output of the generator 19 signals. The second inputs of the electronic keys 29 and 30 are combined and connected to one of the L outputs of the address decoder 23. To the third input of the electronic key 29 directly and to the third input of the electronic key 30 through the logical element NOT 32, data is received from the electronic control unit 25. The combined output of the electronic keys 29 and 30 is one of the L outputs BFTZI 21.

 Thus, in accordance with one of the L addresses, a corresponding L output signals are generated in the BFETI 21, each of which is supplied to the conductive signal bus 16 of one of the corresponding information memory cells, and if there is a logical unit signal at the input of the BFTI 21 signal, the signal at the corresponding output BFTZI 21 will have a phase coinciding with the phase of the signal coming from the output of the signal generator 19.

 As a result, the toroid-like elements 14 of the information memory cells are affected by mutually intersecting magnetizing and magnetizing alternating magnetic fields, which, when recording alternative information, change the direction of twisting of the closed magnetic flux in the toroid-like elements 14.

 The logical unit is written to the reference memory cell as follows. According to the control signal coming from the controller 26, the signal “control of the initialization mode” is generated in the electronic control unit 25, which allows the signal of the logical unit to be written from the output of the initialization block 22 to the reference memory element. The initialization block 22 (Fig. 13) is made in the form of a three-input logic element And 33, the first, second and third inputs of which respectively receive signals from the signal generator 19, the signal "control mode" initialization and the signal of the logical unit. The signal from the output of the initialization unit 22, the phase of which coincides with the phase of the signal from the output of the signal generator 19, is fed to the signal bus 18 of the reference memory cell, to the biasing bus 15 of which the signal from the output of the logic element OR 28 of BFTP 20 is simultaneously supplied, as a result of which the signal of a logical unit will be recorded in the reference cell.

 The bits of one information word are recorded in information cells, toroid-like elements 14 of which are magnetized by one conductive bus 15, since in this case it is possible to write and read all W bits of the word simultaneously in one cycle, with L = W. If the word length W is large enough , then it is formed by logically combining several rows L of one or more memory matrices 13.

 Reading information is as follows.

 The signal from the output of the signal generator 19 is fed to the signal input of the BFTP 20, where, in accordance with one of the K addresses received from the first outputs of the address decoder 23, K output signals are generated that arrive at the corresponding conductive magnetizing buses 15 of the memory information cells, and the output signal arriving on the conductive magnetizing bus 15 of the reference memory cell. As a result, the toroid-like elements 14 of the information memory cells and the toroid-like element 17 of the reference memory cell are affected by an alternating magnetizing field.

 In block 24 of the detecting devices, the phases of the signals received at its corresponding inputs from any or all K x L information memory cells are compared with the phase of the signal received from the reference memory cell. The detected signals come from the outputs of the block 24 of the detecting devices to the information inputs of the electronic control unit 25, where the value of the unit of information recorded in the information cell is determined.

 The formation of address codes, data signals and control signals is carried out in the electronic control unit 25 according to the commands received from the corresponding outputs and inputs / outputs of the controller 26.

 The process of reading information is shown in time charts (Fig. 17 and Fig. 18). In FIG. 17 are designated: 1 - the signal at the output of the signal generator, 2 - the signal at the output of the information memory cell in a single state, 3 - the signal at the output of the reference memory cell, 4 - the signal at the output of the block of detecting devices. In FIG. 18 are indicated: 1 — signal at the output of the signal generator, 2 — signal at the output of the information memory cell in the zero state, 3 — signal at the output of the reference memory cell, 4 — signal at the output of the block of detecting devices.

The proposed method of toroidal recording and reading of information and a device for its implementation make it possible to create a solid-state random access memory device having a multilayer structure with a recording density of up to 100 Mbit / cm ² in each layer, with non-volatility and durability of information storage. The memory device provides an unlimited number of cycles of writing and reading information at a read speed of 10-100 GB / s, a clock frequency of 100-1000 MHz and access time less than 10 ns. In addition, the solid-state memory device has a low dissipation power of 100 mW and is resistant to various external influences (radiation, temperature, electrical).

 The above provides the invention with great practical application and allows you to create a new class of magnetic memory devices - MTRAM.

Claims (15)

 1. A method of toroidal recording and reading of information, according to which toroid-like configurations are formed in a material, for example magnetic, each of which has a closed magnetic flux of a certain swirling direction, when writing units of alternative information, the swirling direction of a closed magnetic flux in the corresponding toroidal configurations is changed, characterized in that structures are formed from toroidal configurations, each of which consists of at least one information at least one reference configuration, when writing a unit of information within the same structure, a mutually intersecting magnetizing and magnetizing alternating magnetic fields is influenced by the time and magnitude on the information configuration, and when reading a unit of information within the same structure, they influence the information and reference configurations by an alternating magnetizing field, detect the output signals of the information and reference configurations of the structure, pr and by the nature of their responses, the value of the unit of information recorded in the information configuration is determined.  2. The method according to claim 1, characterized in that when recording a unit of information within the same structure, the information configuration is affected by one or more pulses of a magnetizing magnetic field under constant exposure to a magnetizing magnetic field.  3. The method according to p. 1, characterized in that the toroidal configurations are made of a material having superconductivity, for example, high-temperature superconducting ceramics.  4. A memory cell containing a toroid-like element made of magnetic material and located in an insulating medium, characterized in that means are introduced into it for magnetization reversal of the toroid-like element by creating a spatio-temporal magnetic field configuration in its volume, including at least one conductive a signal bus passing through the axial hole of the toroid-like element and creating a vortex magnetic field in the toroid-like element, and at least one conductive magnetizing conductive bus disposed outside elements and create toroidopodobnogo toroidopodobnom element in a magnetic field transverse to the vortex.  5. The cell according to claim 4, characterized in that the insulating medium is made of a dielectric material, for example, silicon oxide, and the conductive signal and conductive magnetizing buses are made of an electrically conductive material, for example silver.  6. The cell according to claim 4, characterized in that the toroid-like element is made of electrically conductive magnetic material, and the toroid-like element, the conductive signal bus and the conductive magnetizing bus are isolated from each other.  7. The cell according to claim 4, characterized in that the toroid-like element is made of an electrically conductive magnetic material, such as iron oxides, wherein the conductive magnetizing bus is located directly on the toroid-like element.  8. The cell according to claim 4, characterized in that the toroid-like element is installed between two conductive magnetizing buses located opposite to each other, and the conductive signal buses, or at least one of them, are transverse to the conductive magnetizing buses.  9. The cell according to claim 4, characterized in that the conductive magnetizing bus is made in the form of a loop covering a toroid-like element.  10. The memory cell according to claim 4 or 7, characterized in that the part of the toroid-like element adjacent to the conductive magnetizing bus is made of magnetically rigid material, for example ferrite, and the magnetically closing part is made of magnetically soft material, for example permalloy.  11. A memory device containing toroid-like elements, means for magnetization reversal of toroid-like elements and an electronic control unit, characterized in that informational memory cells and at least one reference memory cell, a signal generator, a magnetizing current generating unit, a generating unit are introduced into it information recording currents, initialization unit, address decoder, detecting device unit and controller, each of the information memory cells and each of the reference memory cells including crumpled toroid-like element and means for magnetization reversal of toroid-like elements, including at least one conductive signal bus and at least one conductive magnetizing bus, information memory cells are grouped into blocks providing word-by-word random access to information, and blocks of information memory cells form a matrix a memory having K rows and L columns, where K is the number of conductive magnetizing buses, and L is the number of conductive signal buses, each of K conductive under of the connecting buses of the information memory cells and the conductive magnetizing bus of each or at least one of the reference memory cells are connected to the respective outputs of the magnetizing current generation unit, each of the L conductive signal buses of the information memory cells is connected to the corresponding output of the information recording current generating unit, and the conductive signal bus of each or at least one of the reference memory cells is connected to the output of the initialization unit, the output of the signal generator with It is connected to the signal inputs of the magnetizing current generating unit, the information writing current generating unit and the initialization unit, the first and second outputs of the address decoder are connected respectively to the K address inputs of the magnetizing current generating unit and to the L address inputs of the generating information recording current generating unit, each of L conductive signal buses of information memory cells and a conductive signal bus of each or at least one of the reference memory cells are connected to the corresponding inputs detection devices, L outputs of which are connected to information inputs of an electronic control unit, outputs of address codes and data outputs of which are connected respectively to inputs of an address decoder and L data inputs of a unit for generating information recording currents, control output of an electronic control unit initialization mode is connected to the input of the same name initialization unit, inputs of address codes, inputs - data outputs and inputs - outputs of the control signals of the electronic control unit are connected to the corresponding the outputs and inputs are the outputs of the controller, and the information input of the initialization block is the input of the signal of a logical unit.  12. The device according to claim 11, characterized in that each or at least one reference memory cell and a corresponding information memory cell located adjacent to it are located on one side of the conductive magnetizing bus.  13. The device according to claim 11, characterized in that each of the reference memory cells or at least one reference memory cell is located between two corresponding information memory cells, which are located on one side of the conductive magnetizing bus.  14. The device according to claim 11, characterized in that each of the reference memory cells or at least one reference memory cell is located mirrored to the corresponding information memory cell relative to the axial line of the conductive magnetizing bus.  15. The device according to claim 11, characterized in that the reference memory cells are made in the form of a reference matrix, the geometric dimensions of which are identical to the geometric dimensions of the memory matrix, the memory matrix and the reference matrix being located symmetrically with respect to the magnetizing current generating unit and the detecting device unit.

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