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RU2017105087A - Солнечный элемент и способ его изготовления - Google Patents

Солнечный элемент и способ его изготовления Download PDF

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Publication number
RU2017105087A
RU2017105087A RU2017105087A RU2017105087A RU2017105087A RU 2017105087 A RU2017105087 A RU 2017105087A RU 2017105087 A RU2017105087 A RU 2017105087A RU 2017105087 A RU2017105087 A RU 2017105087A RU 2017105087 A RU2017105087 A RU 2017105087A
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RU
Russia
Prior art keywords
silicon substrate
main surface
boron
solar cell
type conductivity
Prior art date
Application number
RU2017105087A
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English (en)
Inventor
Такенори ВАТАБЕ
Хироюки ОЦУКА
Original Assignee
Син-Эцу Кемикал Ко., Лтд.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Син-Эцу Кемикал Ко., Лтд. filed Critical Син-Эцу Кемикал Ко., Лтд.
Publication of RU2017105087A publication Critical patent/RU2017105087A/ru

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)

Claims (10)

1. Солнечный элемент, содержащий кремниевую подложку, легированную галлием и имеющую сформированный в ней р-n переход, при этом кремневая подложка
- снабжена пленкой термически оксидированного кремния по меньшей мере на первой из своих главных поверхностей, которая представляет собой главную поверхность, имеющую область с проводимостью р-типа, и
- дополнительно легирована бором.
2. Солнечный элемент по п. 1, в котором у кремниевой подложки по меньшей мере вся первая главная поверхность имеет проводимость р-типа.
3. Солнечный элемент по п. 1 или 2, в котором концентрация бора в кремниевой подложке составляет от 5×1014 до 1×1016 атомов/см3.
4. Способ изготовления солнечного элемента, включающий следующие операции:
- приготавливают кремниевую подложку, легированную галлием и бором,
- формируют в кремниевой подложке р-n переход и
- формируют пленку термически оксидированного кремния по меньшей мере на первой главной поверхности кремниевой подложки, причем указанная первая главная поверхность является главной поверхностью, имеющей область с проводимостью р-типа.
5. Способ по п. 4, в котором концентрация бора в приготовленной кремниевой подложке составляет от 5×1014 до 1×1016 атомов/см3.
RU2017105087A 2014-09-04 2015-06-12 Солнечный элемент и способ его изготовления RU2017105087A (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014180220A JP5830147B1 (ja) 2014-09-04 2014-09-04 太陽電池及び太陽電池の製造方法
JP2014-180220 2014-09-04
PCT/JP2015/002959 WO2016035229A1 (ja) 2014-09-04 2015-06-12 太陽電池及び太陽電池の製造方法

Publications (1)

Publication Number Publication Date
RU2017105087A true RU2017105087A (ru) 2018-10-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU2017105087A RU2017105087A (ru) 2014-09-04 2015-06-12 Солнечный элемент и способ его изготовления

Country Status (12)

Country Link
US (1) US20170263791A1 (ru)
EP (1) EP3190628B1 (ru)
JP (1) JP5830147B1 (ru)
KR (1) KR102420807B1 (ru)
CN (1) CN106796964B (ru)
BR (1) BR112017003041A2 (ru)
ES (1) ES2780048T3 (ru)
MY (1) MY180755A (ru)
RU (1) RU2017105087A (ru)
SG (1) SG11201701418RA (ru)
TW (1) TWI673886B (ru)
WO (1) WO2016035229A1 (ru)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6946706B2 (ja) * 2017-04-18 2021-10-06 市光工業株式会社 光変換装置の製造方法及び光変換装置
CN108133975B (zh) * 2018-01-29 2024-06-07 泰州隆基乐叶光伏科技有限公司 一种多晶掺镓太阳电池及其制备方法
CN108172637A (zh) * 2018-01-29 2018-06-15 泰州隆基乐叶光伏科技有限公司 一种多晶掺镓背钝化太阳电池及其制备方法
CN108133976A (zh) * 2018-01-29 2018-06-08 泰州隆基乐叶光伏科技有限公司 一种单晶掺镓背钝化太阳电池及其制备方法
CN111509082B (zh) * 2020-03-20 2024-05-24 中国科学院宁波材料技术与工程研究所 掺镓多晶硅薄膜制备方法及其在太阳电池的应用

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100676459B1 (ko) 1999-05-28 2007-01-31 신에쯔 한도타이 가부시키가이샤 Ｇａ첨가 ＣＺ 단결정 및 웨이퍼 그리고 그 제조방법
JP2002076399A (ja) * 2000-08-30 2002-03-15 Shin Etsu Handotai Co Ltd 太陽電池セルの製造方法およびこの方法で製造された太陽電池セル
JP2002083981A (ja) * 2000-09-07 2002-03-22 Shin Etsu Handotai Co Ltd 太陽電池セルおよびその製造方法
JP3872428B2 (ja) * 2000-10-06 2007-01-24 信越半導体株式会社 太陽電池の製造方法
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JP4118187B2 (ja) * 2003-05-09 2008-07-16 信越半導体株式会社 太陽電池の製造方法
KR20100032900A (ko) * 2007-07-18 2010-03-26 아이엠이씨 에미터 구조체를 제조하는 방법 및 그로부터 생성되는 에미터 구조체들
US8349644B2 (en) * 2007-10-18 2013-01-08 e-Cube Energy Technologies, Ltd. Mono-silicon solar cells
CN102203953B (zh) * 2009-06-18 2016-06-01 Lg电子株式会社 太阳能电池及其制造方法
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WO2013157090A1 (ja) * 2012-04-18 2013-10-24 株式会社日立製作所 太陽電池およびその製造方法
KR101631450B1 (ko) * 2013-03-05 2016-06-17 엘지전자 주식회사 태양 전지

Also Published As

Publication number Publication date
TWI673886B (zh) 2019-10-01
TW201626593A (zh) 2016-07-16
CN106796964B (zh) 2018-11-20
JP5830147B1 (ja) 2015-12-09
MY180755A (en) 2020-12-08
JP2016054255A (ja) 2016-04-14
BR112017003041A2 (pt) 2017-11-21
CN106796964A (zh) 2017-05-31
SG11201701418RA (en) 2017-03-30
KR20170053614A (ko) 2017-05-16
US20170263791A1 (en) 2017-09-14
KR102420807B1 (ko) 2022-07-13
WO2016035229A1 (ja) 2016-03-10
EP3190628A1 (en) 2017-07-12
ES2780048T3 (es) 2020-08-21
EP3190628B1 (en) 2020-01-15
EP3190628A4 (en) 2018-08-22

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