RU2013130852A - MICROWAVE PLASMA PROCESSING DEVICE - Google Patents
MICROWAVE PLASMA PROCESSING DEVICE Download PDFInfo
- Publication number
- RU2013130852A RU2013130852A RU2013130852/28A RU2013130852A RU2013130852A RU 2013130852 A RU2013130852 A RU 2013130852A RU 2013130852/28 A RU2013130852/28 A RU 2013130852/28A RU 2013130852 A RU2013130852 A RU 2013130852A RU 2013130852 A RU2013130852 A RU 2013130852A
- Authority
- RU
- Russia
- Prior art keywords
- waveguide path
- processing device
- wall
- plasma processing
- tiers
- Prior art date
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- 239000007789 gas Substances 0.000 claims abstract 2
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- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Устройство СВЧ плазменной обработки, содержащее волноводный тракт, огибающий боковую стенку реакционной камеры, через центр широкой стенки волноводного тракта, перпендикулярно к камере проходят несколько разрядных трубок, а в местах их входа и выхода в волноводный тракт накладывается магнитное поле для создания условий электронного циклотронного резонанса, отличающееся тем, что волноводные тракты, выполненные кольцевыми, расположены на стенке реакционной камеры ярусами со смещением разрядных трубок в ярусах друг относительно друга, а так же дополнительно введен электрод, через который вводятся газы.A microwave plasma processing device containing a waveguide path enveloping the side wall of the reaction chamber, several discharge tubes pass perpendicular to the chamber through the center of the wide wall of the waveguide path, and a magnetic field is applied at the points of entry and exit of the waveguide path to create conditions for electron cyclotron resonance, characterized in that the waveguide paths, made circular, are located on the wall of the reaction chamber in tiers with the offset of the discharge tubes in tiers relative to each other, as well as an additional electrode is introduced through which gases are introduced.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2013130852/28A RU2539872C1 (en) | 2013-07-05 | 2013-07-05 | Microwave plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2013130852/28A RU2539872C1 (en) | 2013-07-05 | 2013-07-05 | Microwave plasma processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2013130852A true RU2013130852A (en) | 2015-01-10 |
| RU2539872C1 RU2539872C1 (en) | 2015-01-27 |
Family
ID=53279124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2013130852/28A RU2539872C1 (en) | 2013-07-05 | 2013-07-05 | Microwave plasma processing device |
Country Status (1)
| Country | Link |
|---|---|
| RU (1) | RU2539872C1 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2106716C1 (en) * | 1992-04-27 | 1998-03-10 | Равиль Кяшшафович Яфаров | Plant for microwave vacuum-plasma treatment of condensed media |
| EP0578047B1 (en) * | 1992-06-23 | 1998-05-13 | Nippon Telegraph And Telephone Corporation | Plasma processing apparatus |
| JP2000277492A (en) * | 1999-03-26 | 2000-10-06 | Hitachi Ltd | Plasma processing apparatus, plasma processing method, and semiconductor manufacturing method |
| RU2299929C2 (en) * | 2005-08-11 | 2007-05-27 | ООО "Оптосистемы" | Uhf plasma reactor |
| RU2368032C1 (en) * | 2005-12-08 | 2009-09-20 | Георгий Яковлевич Павлов | Device for plasma treatment |
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2013
- 2013-07-05 RU RU2013130852/28A patent/RU2539872C1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| RU2539872C1 (en) | 2015-01-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | The patent is invalid due to non-payment of fees |
Effective date: 20190706 |