RU2013119139A - METHOD FOR PRODUCING HETEROSTRUCTURE OF TITANIUM OXIDE - TITANIUM SILICIDE ON A SILICON SUBSTRATE - Google Patents
METHOD FOR PRODUCING HETEROSTRUCTURE OF TITANIUM OXIDE - TITANIUM SILICIDE ON A SILICON SUBSTRATE Download PDFInfo
- Publication number
- RU2013119139A RU2013119139A RU2013119139/02A RU2013119139A RU2013119139A RU 2013119139 A RU2013119139 A RU 2013119139A RU 2013119139/02 A RU2013119139/02 A RU 2013119139/02A RU 2013119139 A RU2013119139 A RU 2013119139A RU 2013119139 A RU2013119139 A RU 2013119139A
- Authority
- RU
- Russia
- Prior art keywords
- heterostructure
- silicon substrate
- titanium
- producing
- silicide
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract 5
- 229910052710 silicon Inorganic materials 0.000 title claims abstract 5
- 239000010703 silicon Substances 0.000 title claims abstract 5
- BAQNULZQXCKSQW-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Ti+4] BAQNULZQXCKSQW-UHFFFAOYSA-N 0.000 title claims abstract 3
- 229910021341 titanium silicide Inorganic materials 0.000 title claims abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract 6
- 230000005855 radiation Effects 0.000 claims abstract 6
- 238000005755 formation reaction Methods 0.000 claims abstract 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract 2
- 230000015572 biosynthetic process Effects 0.000 claims abstract 2
- 238000010438 heat treatment Methods 0.000 claims abstract 2
- 230000003647 oxidation Effects 0.000 claims abstract 2
- 238000007254 oxidation reaction Methods 0.000 claims abstract 2
- 229910021332 silicide Inorganic materials 0.000 claims abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052719 titanium Inorganic materials 0.000 claims abstract 2
- 239000010936 titanium Substances 0.000 claims abstract 2
- 229910052724 xenon Inorganic materials 0.000 claims abstract 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims abstract 2
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- Electrodes Of Semiconductors (AREA)
Abstract
1. Способ получения гетероструктуры оксид титана - силицид титана на кремниевой подложке, включающий нагрев нанокристаллической пленки титана на подложке кремния в атмосфере воздуха, отличающийся тем, что активацию реакций оксидирования и силицидообразования в ходе формирования гетероструктуры осуществляют световым излучением.2. Способ по п.1 отличающийся тем, что в качестве источника света используют импульсные ксеноновые лампы с диапазоном излучения 0,2- 1,2 мкм.3. Способ по п.1 отличающийся тем, что дозу энергии излучения на облучаемую подложку подают в интервале 220-240 Дж·смпакетами импульсов длительностью 10с в течение 2,0-2,2 с.1. A method of producing a heterostructure titanium oxide - titanium silicide on a silicon substrate, comprising heating a nanocrystalline titanium film on a silicon substrate in an atmosphere of air, characterized in that the oxidation and silicide formation reactions are activated during the formation of the heterostructure by light radiation. 2. The method according to claim 1, characterized in that pulsed xenon lamps with a radiation range of 0.2-1.2 microns are used as the light source. The method according to claim 1, characterized in that the dose of radiation energy to the irradiated substrate is supplied in the range of 220-240 J · cm packets of pulses with a duration of 10 s for 2.0-2.2 s.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2013119139/02A RU2556183C2 (en) | 2013-04-24 | 2013-04-24 | Method of producing titanium oxide - titanium silicide heterostructure on monocrystalline silicon substrate coated with nanocrystalline titanium film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2013119139/02A RU2556183C2 (en) | 2013-04-24 | 2013-04-24 | Method of producing titanium oxide - titanium silicide heterostructure on monocrystalline silicon substrate coated with nanocrystalline titanium film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2013119139A true RU2013119139A (en) | 2014-10-27 |
| RU2556183C2 RU2556183C2 (en) | 2015-07-10 |
Family
ID=53380632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2013119139/02A RU2556183C2 (en) | 2013-04-24 | 2013-04-24 | Method of producing titanium oxide - titanium silicide heterostructure on monocrystalline silicon substrate coated with nanocrystalline titanium film |
Country Status (1)
| Country | Link |
|---|---|
| RU (1) | RU2556183C2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111146410A (en) * | 2018-11-05 | 2020-05-12 | 宁德时代新能源科技股份有限公司 | Negative electrode active material and battery |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6849471B2 (en) * | 2003-03-28 | 2005-02-01 | Reflectivity, Inc. | Barrier layers for microelectromechanical systems |
| US5756369A (en) * | 1996-07-11 | 1998-05-26 | Lsi Logic Corporation | Rapid thermal processing using a narrowband infrared source and feedback |
| KR100634288B1 (en) * | 2003-12-01 | 2006-10-16 | 야스히로 모리 | Method for modifying surface of solid substrate, surface modified solid substrate and apparatus for modifying surface of solid substrate |
| RU2425908C2 (en) * | 2005-02-23 | 2011-08-10 | Пикодеон Лтд. Ой | Procedure for application of coating by means of pulse laser and object with coating applied by such procedure |
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2013
- 2013-04-24 RU RU2013119139/02A patent/RU2556183C2/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111146410A (en) * | 2018-11-05 | 2020-05-12 | 宁德时代新能源科技股份有限公司 | Negative electrode active material and battery |
| CN111146410B (en) * | 2018-11-05 | 2021-03-02 | 宁德时代新能源科技股份有限公司 | Negative electrode active material and battery |
Also Published As
| Publication number | Publication date |
|---|---|
| RU2556183C2 (en) | 2015-07-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | The patent is invalid due to non-payment of fees |
Effective date: 20160425 |