[go: up one dir, main page]

PT908923E - Aparelho para producao de plasma indutivo de grande potencia para processamento por plasma - Google Patents

Aparelho para producao de plasma indutivo de grande potencia para processamento por plasma

Info

Publication number
PT908923E
PT908923E PT98401199T PT98401199T PT908923E PT 908923 E PT908923 E PT 908923E PT 98401199 T PT98401199 T PT 98401199T PT 98401199 T PT98401199 T PT 98401199T PT 908923 E PT908923 E PT 908923E
Authority
PT
Portugal
Prior art keywords
plasma
process chamber
production
processing
high power
Prior art date
Application number
PT98401199T
Other languages
English (en)
Inventor
Roland Ernst
Pascal Colpo
Francois Rossi
Jean Daviet
Original Assignee
Europ Economic Community
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Europ Economic Community filed Critical Europ Economic Community
Publication of PT908923E publication Critical patent/PT908923E/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32504—Means for preventing sputtering of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Magnetic Treatment Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Treatment Of Fiber Materials (AREA)
  • Arc Welding In General (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
PT98401199T 1997-10-10 1998-05-19 Aparelho para producao de plasma indutivo de grande potencia para processamento por plasma PT908923E (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP97402395A EP0908921A1 (en) 1997-10-10 1997-10-10 Process chamber for plasma enhanced chemical vapour deposition and apparatus employing said process chamber
EP98400888A EP0908922B1 (en) 1997-10-10 1998-04-10 Process chamber for plasma processing and apparatus employing said process chamber

Publications (1)

Publication Number Publication Date
PT908923E true PT908923E (pt) 2003-08-29

Family

ID=8229877

Family Applications (2)

Application Number Title Priority Date Filing Date
PT98400888T PT908922E (pt) 1997-10-10 1998-04-10 Camara de processo para o processamento de plasma e dispositivo empregando essa camara de processo
PT98401199T PT908923E (pt) 1997-10-10 1998-05-19 Aparelho para producao de plasma indutivo de grande potencia para processamento por plasma

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PT98400888T PT908922E (pt) 1997-10-10 1998-04-10 Camara de processo para o processamento de plasma e dispositivo empregando essa camara de processo

Country Status (6)

Country Link
EP (2) EP0908921A1 (pt)
AT (2) ATE249098T1 (pt)
DE (3) DE69817721T2 (pt)
DK (2) DK0908922T3 (pt)
ES (2) ES2205398T3 (pt)
PT (2) PT908922E (pt)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3775689B2 (ja) * 1997-04-21 2006-05-17 トーキョー エレクトロン アリゾナ インコーポレイテッド 材料をイオン化スパッタリングする方法と装置
US6565717B1 (en) 1997-09-15 2003-05-20 Applied Materials, Inc. Apparatus for sputtering ionized material in a medium to high density plasma
US6080287A (en) * 1998-05-06 2000-06-27 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6287435B1 (en) 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6390019B1 (en) 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
GB9812852D0 (en) * 1998-06-16 1998-08-12 Surface Tech Sys Ltd Plasma processing apparatus
DE19923018C2 (de) * 1999-05-19 2001-09-27 Univ Dresden Tech Vorrichtung zur Bearbeitung bandförmiger Werkstücke mit Hilfe resonanter Hochfrequenzplasmen
EP1293588B1 (en) 2000-05-17 2009-12-16 IHI Corporation Plasma cvd apparatus and method
US6831742B1 (en) 2000-10-23 2004-12-14 Applied Materials, Inc Monitoring substrate processing using reflected radiation
JP4770029B2 (ja) 2001-01-22 2011-09-07 株式会社Ｉｈｉ プラズマｃｖｄ装置及び太陽電池の製造方法
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
US20040129221A1 (en) * 2003-01-08 2004-07-08 Jozef Brcka Cooled deposition baffle in high density plasma semiconductor processing
DE10358505B4 (de) * 2003-12-13 2007-10-11 Roth & Rau Ag Plasmaquelle zur Erzeugung eines induktiv gekoppelten Plasmas

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3879597A (en) * 1974-08-16 1975-04-22 Int Plasma Corp Plasma etching device and process
AT369927B (de) * 1980-04-15 1983-02-10 Vmei Lenin Nis Baugruppe zum schutz elektrischer isolatoren vor einer glimmentladung
US4795879A (en) * 1987-04-13 1989-01-03 The United States Of America As Represented By The United States Department Of Energy Method of processing materials using an inductively coupled plasma
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
JPH04350156A (ja) * 1991-05-27 1992-12-04 Ishikawajima Harima Heavy Ind Co Ltd 薄膜形成装置
US5641375A (en) * 1994-08-15 1997-06-24 Applied Materials, Inc. Plasma etching reactor with surface protection means against erosion of walls
US5556521A (en) * 1995-03-24 1996-09-17 Sony Corporation Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source
US5763851A (en) * 1995-11-27 1998-06-09 Applied Materials, Inc. Slotted RF coil shield for plasma deposition system
TW327236B (en) * 1996-03-12 1998-02-21 Varian Associates Inductively coupled plasma reactor with faraday-sputter shield
EP0845151A1 (en) * 1996-05-09 1998-06-03 Applied Materials, Inc. Recessed coil for generating a plasma

Also Published As

Publication number Publication date
DE69817721T2 (de) 2004-07-22
DE69838823D1 (de) 2008-01-17
DK0908922T3 (da) 2004-01-19
EP0908922A1 (en) 1999-04-14
ES2205398T3 (es) 2004-05-01
DE69812830D1 (de) 2003-05-08
EP0908922B1 (en) 2003-09-03
DE69838823T2 (de) 2008-11-13
ATE236453T1 (de) 2003-04-15
ATE249098T1 (de) 2003-09-15
PT908922E (pt) 2004-01-30
DK0908923T3 (da) 2003-07-21
EP0908921A1 (en) 1999-04-14
DE69817721D1 (de) 2003-10-09
ES2192750T3 (es) 2003-10-16
DE69812830T2 (de) 2003-11-06

Similar Documents

Publication Publication Date Title
PT908923E (pt) Aparelho para producao de plasma indutivo de grande potencia para processamento por plasma
WO2000058995A3 (en) Apparatus for improving plasma distribution and performance in an inductively coupled plasma
US7737382B2 (en) Device for processing welding wire
JPH04232243A (ja) 粒状もしくは粉末状材料を基板表面にデポジットする装置
TW215968B (en) Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber and method of treating an article with a plasma apparatus in which a uniform electric field is induced by a dielectric window
ATE252311T1 (de) Durch mikrowellen gesteuertes plasmaspritzgerät und spritzverfahren
MY139877A (en) Lower electrode design for higher uniformity
KR970067606A (ko) 패러데이-스퍼터 실드를 갖는 유도 결합 플라즈마 반응기
FR2797372B1 (fr) Procede de production de plasmas elementaires en vue de creer un plasma uniforme pour une surface d'utilisation et dispositif de production d'un tel plasma
TW279240B (en) Parallel-plate icp source/rf bias electrode head
KR20140046481A (ko) 고효율 플라즈마 소스
KR960026342A (ko) 플라즈마처리 장치와 플라즈마처리 방법
ATE362197T1 (de) Vorrichtung für ein plasmaverfahren
KR20020029743A (ko) 가스와 재료를 처리하기 위한 유도결합 링-플라즈마소스장치 및 그의 방법
AU2001268542A1 (en) Methods and apparatus for spray forming, atomization and heat transfer
EP0849811A3 (en) Apparatus for forming non-single-crystal semiconductor thin film, method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device
CN102112657A (zh) 基板上沉积膜的工艺和装置
CN100417308C (zh) 用于形成等离子体的设备和方法
PL353922A1 (en) Baking device for producing endless strips
AU2002368438A1 (en) Susceptor system________________________
WO2000039838A3 (en) Method for igniting a plasma inside a plasma processing reactor
US4795879A (en) Method of processing materials using an inductively coupled plasma
US5453304A (en) Method and apparatus for coating glassware
KR100606451B1 (ko) 상압 플라즈마 발생장치
US4897579A (en) Method of processing materials using an inductively coupled plasma