PT105039A - P-TYPE OXIDE ALLOYS BASED ON COPPER OXIDES, TANK OXIDES, COPPER TIN ALLOYS AND THEIR METAL LEAGUE, AND NICKEL OXIDE, WITH THE RESPECTIVE METALS EMBEDDED, THEIR MANUFACTURING AND USE PROCESS - Google Patents
P-TYPE OXIDE ALLOYS BASED ON COPPER OXIDES, TANK OXIDES, COPPER TIN ALLOYS AND THEIR METAL LEAGUE, AND NICKEL OXIDE, WITH THE RESPECTIVE METALS EMBEDDED, THEIR MANUFACTURING AND USE PROCESS Download PDFInfo
- Publication number
- PT105039A PT105039A PT105039A PT10503910A PT105039A PT 105039 A PT105039 A PT 105039A PT 105039 A PT105039 A PT 105039A PT 10503910 A PT10503910 A PT 10503910A PT 105039 A PT105039 A PT 105039A
- Authority
- PT
- Portugal
- Prior art keywords
- oxides
- copper
- alloys
- league
- tank
- Prior art date
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/402—Amorphous materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/871—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group I-VI materials, e.g. Cu2O; being Group I-VII materials, e.g. CuI
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- H10P14/22—
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- H10P14/265—
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- H10P14/3402—
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- H10P14/3434—
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- H10P14/3444—
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Electrodes Of Semiconductors (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
O PRESENTE INVENTO RELACIONA-SE COM FILMES FINOS COMPREENDENDO MONÓXIDOS NÃO ESTEQUIOMÉTRICOS DE: COBRE (OCU2)X COM COBRE METÁLICO CÚBICO (CUCY) EMBEBIDO [(OCU2)X+(CU1-2)Y, ONDE 0,05≤X<1 E 0,01≤Y≤0,9]; DE ESTANHO (OSN)X COM ESTANHO METÁLICO (SNX) EMBEBIDO [(OSN)Z+(SN1-2)W ONDE 0,05≤Z<1 E 0,01≤W≤0,9]; LIGAS DE CUCX-SNX COM SN E CU METÁLICOS EMBEBIDOS [(O-CU-SN)A+(CUΑ-SNΒ)B COM 0<Α<2 E 0<Β<2, ONDE 0.05≤A<1 E 0,01≤B≤0,9]; E DE NÍQUEL (ONI)X COM ESPÉCIES DE NI E SN EMBEBIDAS [(O-NI)A+(NIΑ-SNΒ)B COM 0<Α<2 E 0<Β<2, ONDE 0,05≤A<1 E 0.01≤B≤0,9]; OU SUAS COMBINAÇÕES, DE ESTRUTURA AMORFA OU NANOCRISTALINA OU POLICRISTALINA, DOPADOS OU NÃO, COM IMPUREZAS COMO ZIRCÓNIO, AZOTO OU FLÚOR, PARA A FABRICAÇÃO DE DISPOSITIVOS CMOS OU TFT, DE MATRIZES ACTIVAS PARA LCD OU OLED, FABRICO DE CIRCUITOS LÓGICOS, ENTRE OUTROS, USANDO SUBSTRATOS RÍGIDOS OU FLEXÍVEIS, EM QUE SE USA UMA CAMADA DE PROTECÇÃO COMO O SU8 OU EQUIVALENTE, OU FILMES DE ÓXIDO DE SILÍCIO OU NÍTRETO DE SILÍCIO, PARA ENCAPSULAMENTO.The present invention relates to thin films comprising non-stoichiometric monoxides of: Copper (OCU2) X with Cbw (CUCY) EMBEDDED [(OCU2) X + (CU1-2) Y, where 0.05≤X <1 E 0 , 01≤Y≤0.9]; (X) X with metallized (SNX) soaked [(OSN) Z + (SN1-2) W WHERE 0,05≤Z <1 E 0,01≤W≤0,9]; CUCX-SNX ALLOYS WITH EMBEDDED METAL NOS AND (CU-SN) A + (CUΑ-SNΒ) B COM 0 <Α <2 AND 0 <Β <2, WHERE 0.05≤A <1 E 0, 01≤B≤0.9]; (N-A) and N (N-A) and N (N-A) and N (N-A) ≤B≤0.9]; Or combinations thereof, of amorphous or nano-crystalline or polycrystalline structure, whether or not in the form of powder, such as zirconium, azide or fl uoride, for the manufacture of CMOS or TFT devices, of active matrix monitors for LCD or OLED, manufacture of logic circuits, Using rigid or flexible substrates, where a protective layer such as SU8 or equivalent, or films of silicon oxide or silicon nitrite is used for encapsulation.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PT105039A PT105039A (en) | 2010-04-06 | 2010-04-06 | P-TYPE OXIDE ALLOYS BASED ON COPPER OXIDES, TANK OXIDES, COPPER TIN ALLOYS AND THEIR METAL LEAGUE, AND NICKEL OXIDE, WITH THE RESPECTIVE METALS EMBEDDED, THEIR MANUFACTURING AND USE PROCESS |
| EP11724031A EP2556531A1 (en) | 2010-04-06 | 2011-04-06 | P-type oxide alloys based on copper oxides, tin oxides, tin-copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof |
| BR112012025702A BR112012025702A2 (en) | 2010-04-06 | 2011-04-06 | p-oxide alloys based on copper oxides, tin oxides, tin-copper alloy oxides and their alloy, and nickel oxide, with their embedded metals, their process of manufacture and use |
| US13/640,214 US9196689B2 (en) | 2010-04-06 | 2011-04-06 | P-type oxide alloys based on copper oxides, tin oxides, tin—copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof |
| PCT/IB2011/051487 WO2011125036A1 (en) | 2010-04-06 | 2011-04-06 | P-type oxide alloys based on copper oxides, tin oxides, tin-copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PT105039A PT105039A (en) | 2010-04-06 | 2010-04-06 | P-TYPE OXIDE ALLOYS BASED ON COPPER OXIDES, TANK OXIDES, COPPER TIN ALLOYS AND THEIR METAL LEAGUE, AND NICKEL OXIDE, WITH THE RESPECTIVE METALS EMBEDDED, THEIR MANUFACTURING AND USE PROCESS |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PT105039A true PT105039A (en) | 2011-10-06 |
Family
ID=44278618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PT105039A PT105039A (en) | 2010-04-06 | 2010-04-06 | P-TYPE OXIDE ALLOYS BASED ON COPPER OXIDES, TANK OXIDES, COPPER TIN ALLOYS AND THEIR METAL LEAGUE, AND NICKEL OXIDE, WITH THE RESPECTIVE METALS EMBEDDED, THEIR MANUFACTURING AND USE PROCESS |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9196689B2 (en) |
| EP (1) | EP2556531A1 (en) |
| BR (1) | BR112012025702A2 (en) |
| PT (1) | PT105039A (en) |
| WO (1) | WO2011125036A1 (en) |
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| JP2013149648A (en) * | 2012-01-17 | 2013-08-01 | Renesas Electronics Corp | Semiconductor device and manufacturing method of the same |
| EP2840590A4 (en) * | 2012-04-16 | 2015-09-02 | Korea Electronics Technology | PROCESS FOR PRODUCING LOW TEMPERATURE PROCESSING OXIDE FILM, OXIDE FILM, AND ELECTRONIC DEVICE |
| KR101284587B1 (en) * | 2012-05-17 | 2013-07-11 | 한국과학기술연구원 | P-type transparent oxide semiconductor, transistor having the same, and manufacture method of the same |
| US20150287871A1 (en) * | 2012-11-05 | 2015-10-08 | University Of Florida Research Foundation, Inc. | Solution-processed ultraviolet light detector based on p-n junctions of metal oxides |
| WO2014148872A1 (en) * | 2013-03-21 | 2014-09-25 | 한양대학교 산학협력단 | Two-terminal switching element having bidirectional switching characteristic, resistive memory cross-point array including same, and method for manufacturing two-terminal switching element and cross-point resistive memory array |
| JP2015035506A (en) * | 2013-08-09 | 2015-02-19 | 株式会社東芝 | Semiconductor device |
| CN104022159B (en) * | 2014-06-17 | 2017-03-08 | 浙江大学 | Amorphous oxide thin film as thin film transistor channel layer and preparation method thereof |
| US9985139B2 (en) | 2014-11-12 | 2018-05-29 | Qualcomm Incorporated | Hydrogenated p-channel metal oxide semiconductor thin film transistors |
| US9685542B2 (en) * | 2014-12-30 | 2017-06-20 | Qualcomm Incorporated | Atomic layer deposition of P-type oxide semiconductor thin films |
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| CN109411417B (en) * | 2017-08-18 | 2020-09-11 | 财团法人工业技术研究院 | Electronic component package and display panel |
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-
2010
- 2010-04-06 PT PT105039A patent/PT105039A/en not_active Application Discontinuation
-
2011
- 2011-04-06 BR BR112012025702A patent/BR112012025702A2/en active Search and Examination
- 2011-04-06 EP EP11724031A patent/EP2556531A1/en not_active Withdrawn
- 2011-04-06 US US13/640,214 patent/US9196689B2/en active Active
- 2011-04-06 WO PCT/IB2011/051487 patent/WO2011125036A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011125036A4 (en) | 2011-12-29 |
| BR112012025702A2 (en) | 2016-07-05 |
| WO2011125036A1 (en) | 2011-10-13 |
| EP2556531A1 (en) | 2013-02-13 |
| US9196689B2 (en) | 2015-11-24 |
| US20130075740A1 (en) | 2013-03-28 |
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| BB1A | Laying open of patent application |
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