[go: up one dir, main page]

PL3237894T3 - Sposób produkcji modułu optoelektronicznego z podstawą zawierającą podłoże metalowe, powłokę dielektryczną i warstwę przewodzącą - Google Patents

Sposób produkcji modułu optoelektronicznego z podstawą zawierającą podłoże metalowe, powłokę dielektryczną i warstwę przewodzącą

Info

Publication number
PL3237894T3
PL3237894T3 PL15825860T PL15825860T PL3237894T3 PL 3237894 T3 PL3237894 T3 PL 3237894T3 PL 15825860 T PL15825860 T PL 15825860T PL 15825860 T PL15825860 T PL 15825860T PL 3237894 T3 PL3237894 T3 PL 3237894T3
Authority
PL
Poland
Prior art keywords
manufacturing
conductive layer
metal substrate
dielectric coating
base containing
Prior art date
Application number
PL15825860T
Other languages
English (en)
Inventor
Philippe Guaino
Original Assignee
Arcelormittal
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arcelormittal filed Critical Arcelormittal
Publication of PL3237894T3 publication Critical patent/PL3237894T3/pl

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00Investigating or analyzing materials by the use of thermal means
    • G01N25/72Investigating presence of flaws
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/14Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H02S50/10Testing of PV devices, e.g. of PV modules or single PV cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/16Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169Thin semiconductor films on metallic or insulating substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/30Coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/30Coatings
    • H10F77/306Coatings for devices having potential barriers
    • H10F77/311Coatings for devices having potential barriers for photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/93Interconnections
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J2005/0077Imaging
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Led Device Packages (AREA)
PL15825860T 2014-12-24 2015-12-23 Sposób produkcji modułu optoelektronicznego z podstawą zawierającą podłoże metalowe, powłokę dielektryczną i warstwę przewodzącą PL3237894T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PCT/IB2014/067309 WO2016103007A1 (fr) 2014-12-24 2014-12-24 Procédé de contrôle d'un support comprenant un substrat métallique, un revêtement diélectrique, et une couche conductrice
PCT/IB2015/059922 WO2016103206A1 (fr) 2014-12-24 2015-12-23 Procédé de fabrication d'un module optoélectronique ayant un support comprenant un substrat métallique, un revêtement diélectrique, et une couche conductrice
EP15825860.8A EP3237894B1 (fr) 2014-12-24 2015-12-23 Procédé de fabrication d'un module optoélectronique ayant un support comprenant un substrat métallique, un revêtement diélectrique, et une couche conductrice

Publications (1)

Publication Number Publication Date
PL3237894T3 true PL3237894T3 (pl) 2020-07-27

Family

ID=52462356

Family Applications (1)

Application Number Title Priority Date Filing Date
PL15825860T PL3237894T3 (pl) 2014-12-24 2015-12-23 Sposób produkcji modułu optoelektronicznego z podstawą zawierającą podłoże metalowe, powłokę dielektryczną i warstwę przewodzącą

Country Status (13)

Country Link
US (1) US10283420B2 (pl)
EP (1) EP3237894B1 (pl)
KR (1) KR102545862B1 (pl)
CN (1) CN107250778B (pl)
AU (1) AU2015370408B2 (pl)
CA (1) CA2971662C (pl)
DK (1) DK3237894T3 (pl)
ES (1) ES2775479T3 (pl)
HR (1) HRP20200304T1 (pl)
HU (1) HUE050323T2 (pl)
PL (1) PL3237894T3 (pl)
PT (1) PT3237894T (pl)
WO (2) WO2016103007A1 (pl)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10276455B2 (en) * 2016-07-29 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for measurement of semiconductor device fabrication tool implement
JP6907951B2 (ja) * 2018-01-11 2021-07-21 トヨタ自動車株式会社 ヒートシンクの検査方法、検査装置及び生産方法、生産システム
DE102019112238A1 (de) * 2019-05-10 2020-11-12 HELLA GmbH & Co. KGaA Verfahren zur Kontrolle der Beschichtung eines elektronischen Bauteils

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW501290B (en) * 1999-07-23 2002-09-01 Telcordia Tech Inc Infrared thermographic method for process monitoring and control of multilayer conductive compositions
US6317216B1 (en) * 1999-12-13 2001-11-13 Brown University Research Foundation Optical method for the determination of grain orientation in films
JP2001326375A (ja) * 2000-03-10 2001-11-22 Sanyo Electric Co Ltd 太陽光発電システムの診断方法及び診断装置
US8462350B2 (en) * 2001-12-06 2013-06-11 Attofemto, Inc. Optically enhanced holographic interferometric testing methods for the development and evaluation of semiconductor devices, materials, wafers, and for monitoring all phases of development and manufacture
US20050252545A1 (en) * 2004-05-12 2005-11-17 Spire Corporation Infrared detection of solar cell defects under forward bias
US7705267B2 (en) * 2005-06-30 2010-04-27 Jon Heyl Semiconductor failure analysis tool
EP1905108A2 (en) * 2005-06-30 2008-04-02 Koninklijke Philips Electronics N.V. Method for reducing occurrence of short-circuit failure in an organic functional device
DE102005040010A1 (de) * 2005-08-23 2007-03-15 Rwe Schott Solar Gmbh Verfahren und Vorrichtung zur Ermittlung von Produktionsfehlern in einem Halbleiterbau-element
US7910822B1 (en) * 2005-10-17 2011-03-22 Solaria Corporation Fabrication process for photovoltaic cell
US7847237B2 (en) * 2006-05-02 2010-12-07 National University Corporation Nara Method and apparatus for testing and evaluating performance of a solar cell
US8710860B2 (en) * 2006-05-05 2014-04-29 Bt Imaging Pty Ltd Method and system for testing indirect bandgap semiconductor devices using luminescence imaging
WO2009102949A2 (en) * 2008-02-13 2009-08-20 Xitronix Corporation Method and apparatus of z-scan photoreflectance characterization
US7989729B1 (en) * 2008-03-11 2011-08-02 Kla-Tencor Corporation Detecting and repairing defects of photovoltaic devices
TW200940977A (en) * 2008-03-19 2009-10-01 Viswell Technology Co Ltd Optical imaging apparatus and method for inspection of solar cells
SG158782A1 (en) * 2008-07-28 2010-02-26 Chan Sok Leng Method and system for detecting micro-cracks in wafers
SG158787A1 (en) * 2008-07-28 2010-02-26 Chan Sok Leng Apparatus for detecting micro-cracks in wafers and method therefor
TW201013963A (en) * 2008-08-15 2010-04-01 Ulvac Inc Method and apparatus for manufacturing solar battery
US7979969B2 (en) * 2008-11-17 2011-07-19 Solopower, Inc. Method of detecting and passivating a defect in a solar cell
DE102009021799A1 (de) * 2009-05-18 2010-11-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur ortsaufgelösten Bestimmung des Serienwiderstandes einer Halbleiterstruktur
US8698083B2 (en) * 2009-08-04 2014-04-15 National University Corporation NARA Institute of Science and Technology Solar cell evaluation method, evaluation device, maintenance method, maintenance system, and method of manufacturing solar cell module
US8940556B2 (en) * 2010-03-01 2015-01-27 First Solar, Inc Electrical bias methods and apparatus for photovoltaic device manufacture
JP5319593B2 (ja) * 2010-04-09 2013-10-16 日清紡メカトロニクス株式会社 太陽電池の検査方法および検査装置
US20110282600A1 (en) * 2010-05-12 2011-11-17 General Electric Company System and method for photovoltaic plant power curve measurement and health monitoring
WO2012012258A2 (en) * 2010-07-21 2012-01-26 First Solar, Inc. Temperature-adjusted spectrometer
US8766192B2 (en) * 2010-11-01 2014-07-01 Asm Assembly Automation Ltd Method for inspecting a photovoltaic substrate
WO2011135195A1 (fr) 2010-11-16 2011-11-03 Arcelormittal Investigación Y Desarrollo Sl Support d'alimentation pour dispositifs électroniques
CN102565065A (zh) * 2010-12-17 2012-07-11 上海山晟太阳能科技有限公司 单片光伏电池芯片的检测方法
US9136184B2 (en) * 2011-02-18 2015-09-15 Alliance For Sustainable Energy, Llc In situ optical diagnostic for monitoring or control of sodium diffusion in photovoltaics manufacturing
JP5694042B2 (ja) * 2011-04-28 2015-04-01 三洋電機株式会社 太陽電池モジュールの評価方法及び太陽電池モジュールの製造方法
EP2710388B1 (en) * 2011-05-20 2021-05-19 SMA Solar Technology AG Method and system for detecting an arc fault in a power circuit
US20130015875A1 (en) * 2011-07-13 2013-01-17 United Solar Ovonic Llc Failure detection system for photovoltaic array
US8982362B2 (en) * 2011-10-04 2015-03-17 First Solar, Inc. System and method for measuring layer thickness and depositing semiconductor layers
JP5628139B2 (ja) * 2011-10-18 2014-11-19 シャープ株式会社 配線欠陥検査方法
DE102012017216B4 (de) * 2012-08-31 2016-06-16 Laser Zentrum Hannover E.V. Verfahren und Vorrichtung zum Herstellen einer elektrischen Schichtstruktur
FR2996079B1 (fr) * 2012-09-24 2016-01-01 Commissariat Energie Atomique Procede de caracterisation d'un element photovoltaique, dispositif de caracterisation de l'element photovoltaique, programme et support d'enregistrement associes
CN102901445B (zh) * 2012-09-28 2015-06-10 华中科技大学 基于光热成像的微电子封装工艺质量检测装置及方法
US20140139260A1 (en) * 2012-11-21 2014-05-22 Sunedison Llc Anti-islanding for grid tied inverters
JP6286821B2 (ja) * 2012-11-26 2018-03-07 東洋製罐グループホールディングス株式会社 フレキシブルデバイス用基板およびその製造方法
US8969809B2 (en) * 2012-12-29 2015-03-03 Honeywell International Inc. Thermo-optical array devices and methods of processing thermo-optical array devices
DE102013100593B4 (de) * 2013-01-21 2014-12-31 Wavelabs Solar Metrology Systems Gmbh Verfahren und Vorrichtung zum Vermessen von Solarzellen
US20140256068A1 (en) * 2013-03-08 2014-09-11 Jeffrey L. Franklin Adjustable laser patterning process to form through-holes in a passivation layer for solar cell fabrication
GB2511836A (en) * 2013-03-15 2014-09-17 Control Tech Ltd Electrical fault detection
WO2014150768A1 (en) * 2013-03-15 2014-09-25 First Solar, Inc. Method providing inline photoluminescence analysis of a photovoltaic device
CN104076306B (zh) * 2013-03-29 2018-06-05 通用电气公司 热辐射屏蔽组件以及使用该热辐射屏蔽组件的系统
US9048373B2 (en) * 2013-06-13 2015-06-02 Tsmc Solar Ltd. Evaporation apparatus and method
JP6418542B2 (ja) * 2013-12-10 2018-11-07 株式会社Screenホールディングス 検査装置および検査方法
JP6395205B2 (ja) * 2014-02-18 2018-09-26 株式会社Screenホールディングス 検査装置及び検査方法
US20160158890A1 (en) * 2014-12-05 2016-06-09 Solarcity Corporation Systems and methods for scribing photovoltaic structures
EP3233631B1 (en) * 2014-12-17 2019-07-03 ABB Schweiz AG Inspecting a solar panel using an unmanned aerial vehicle

Also Published As

Publication number Publication date
CN107250778A (zh) 2017-10-13
HRP20200304T1 (hr) 2020-06-12
WO2016103206A1 (fr) 2016-06-30
PT3237894T (pt) 2020-05-04
AU2015370408B2 (en) 2020-09-24
US20180005905A1 (en) 2018-01-04
CA2971662A1 (fr) 2016-06-30
KR102545862B1 (ko) 2023-06-21
CA2971662C (fr) 2023-06-27
EP3237894A1 (fr) 2017-11-01
CN107250778B (zh) 2020-09-22
WO2016103007A1 (fr) 2016-06-30
EP3237894B1 (fr) 2020-02-12
US10283420B2 (en) 2019-05-07
DK3237894T3 (da) 2020-04-27
HUE050323T2 (hu) 2020-11-30
ES2775479T3 (es) 2020-07-27
KR20170101216A (ko) 2017-09-05
AU2015370408A1 (en) 2017-07-13

Similar Documents

Publication Publication Date Title
SG11201710317RA (en) Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device
GB2514928B (en) Method of coating a substrate with a catalyst component
SG10201911502WA (en) Conductive film coated substrate, multilayer reflective film coated substrate, reflective mask blank, reflective mask, and semiconductor device manufacturing method
IL236490B (en) Substrate-guided optical device
EP3124525A4 (en) Polymer substrate with hard coat layer and manufacturing method for such polymer substrate
EP2836056A4 (en) METHOD FOR PRODUCING A HEAT-DISABLE PLATE
HUE055325T2 (hu) Eljárás szubsztrátum részecskestabilizált habbal történõ bevonására
BR112015023836A2 (pt) composição para aplicação a um substrato metálico, artigo revestido e método para manufaturar um artigo revestido
EP3284105A4 (en) Organic light-emitting diode array substrate, method of manufacturing the same, and related display apparatus
BR112015023290A2 (pt) pó de aspersão térmica, método de fabricação de um pó de aspersão térmica, revestimento por aspersão térmica formado de um pó de aspersão térmica, e, método de formação de um revestimento por aspersão térmica em um substrato
EP3016090A4 (en) Method for manufacturing substrate for organic electronic device
EP3016162A4 (en) Substrate for organic electronic devices and production method therefor
EP3057144A4 (en) Method for producing substrate for semiconductor light emitting elements, method for manufacturing semiconductor light emitting element, substrate for semiconductor light emitting elements, and semiconductor light emitting element
PL3194506T3 (pl) Sposób formowania powłoki antyodblaskowej na podłożu
EP3422367A4 (en) ELECTRICALLY CONDUCTIVE PASTE, ELECTRONIC SUBSTRATE AND METHOD FOR PRODUCING THE SAID SUBSTRATE
EP3101160A4 (en) Semiconductor substrate manufacturing method
EP3133443A4 (en) Photosensitive resin composition, method for manufacturing conductive pattern, substrate, element, and touchscreen
EP3016113A4 (en) Conductive substrate and manufacturing method thereof
EP3203816A4 (en) Method for manufacturing electronic circuit substrate, and electronic circuit substrate obtained thereby
FR3030493B1 (fr) Substrat en verre muni de bandes conductrices a base de cuivre
SG2013020532A (en) Method of forming a coating on a metal substrate
PL3237894T3 (pl) Sposób produkcji modułu optoelektronicznego z podstawą zawierającą podłoże metalowe, powłokę dielektryczną i warstwę przewodzącą
EP3269689A4 (en) Transparent conductive film-equipped glass substrate and method for manufacturing same
KR102367120B9 (ko) 표면강화 투명기판 및 이의 제조방법
EP3565390A4 (en) WIRING SUBSTRATE AND METHOD FOR MANUFACTURING A WIRING SUBSTRATE