PL3237894T3 - Sposób produkcji modułu optoelektronicznego z podstawą zawierającą podłoże metalowe, powłokę dielektryczną i warstwę przewodzącą - Google Patents
Sposób produkcji modułu optoelektronicznego z podstawą zawierającą podłoże metalowe, powłokę dielektryczną i warstwę przewodzącąInfo
- Publication number
- PL3237894T3 PL3237894T3 PL15825860T PL15825860T PL3237894T3 PL 3237894 T3 PL3237894 T3 PL 3237894T3 PL 15825860 T PL15825860 T PL 15825860T PL 15825860 T PL15825860 T PL 15825860T PL 3237894 T3 PL3237894 T3 PL 3237894T3
- Authority
- PL
- Poland
- Prior art keywords
- manufacturing
- conductive layer
- metal substrate
- dielectric coating
- base containing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/72—Investigating presence of flaws
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Biochemistry (AREA)
- Pathology (AREA)
- Immunology (AREA)
- General Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photovoltaic Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/IB2014/067309 WO2016103007A1 (fr) | 2014-12-24 | 2014-12-24 | Procédé de contrôle d'un support comprenant un substrat métallique, un revêtement diélectrique, et une couche conductrice |
PCT/IB2015/059922 WO2016103206A1 (fr) | 2014-12-24 | 2015-12-23 | Procédé de fabrication d'un module optoélectronique ayant un support comprenant un substrat métallique, un revêtement diélectrique, et une couche conductrice |
EP15825860.8A EP3237894B1 (fr) | 2014-12-24 | 2015-12-23 | Procédé de fabrication d'un module optoélectronique ayant un support comprenant un substrat métallique, un revêtement diélectrique, et une couche conductrice |
Publications (1)
Publication Number | Publication Date |
---|---|
PL3237894T3 true PL3237894T3 (pl) | 2020-07-27 |
Family
ID=52462356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PL15825860T PL3237894T3 (pl) | 2014-12-24 | 2015-12-23 | Sposób produkcji modułu optoelektronicznego z podstawą zawierającą podłoże metalowe, powłokę dielektryczną i warstwę przewodzącą |
Country Status (13)
Country | Link |
---|---|
US (1) | US10283420B2 (pl) |
EP (1) | EP3237894B1 (pl) |
KR (1) | KR102545862B1 (pl) |
CN (1) | CN107250778B (pl) |
AU (1) | AU2015370408B2 (pl) |
CA (1) | CA2971662C (pl) |
DK (1) | DK3237894T3 (pl) |
ES (1) | ES2775479T3 (pl) |
HR (1) | HRP20200304T1 (pl) |
HU (1) | HUE050323T2 (pl) |
PL (1) | PL3237894T3 (pl) |
PT (1) | PT3237894T (pl) |
WO (2) | WO2016103007A1 (pl) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10276455B2 (en) * | 2016-07-29 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for measurement of semiconductor device fabrication tool implement |
JP6907951B2 (ja) * | 2018-01-11 | 2021-07-21 | トヨタ自動車株式会社 | ヒートシンクの検査方法、検査装置及び生産方法、生産システム |
DE102019112238A1 (de) * | 2019-05-10 | 2020-11-12 | HELLA GmbH & Co. KGaA | Verfahren zur Kontrolle der Beschichtung eines elektronischen Bauteils |
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TW501290B (en) * | 1999-07-23 | 2002-09-01 | Telcordia Tech Inc | Infrared thermographic method for process monitoring and control of multilayer conductive compositions |
US6317216B1 (en) * | 1999-12-13 | 2001-11-13 | Brown University Research Foundation | Optical method for the determination of grain orientation in films |
JP2001326375A (ja) * | 2000-03-10 | 2001-11-22 | Sanyo Electric Co Ltd | 太陽光発電システムの診断方法及び診断装置 |
US8462350B2 (en) * | 2001-12-06 | 2013-06-11 | Attofemto, Inc. | Optically enhanced holographic interferometric testing methods for the development and evaluation of semiconductor devices, materials, wafers, and for monitoring all phases of development and manufacture |
US20050252545A1 (en) * | 2004-05-12 | 2005-11-17 | Spire Corporation | Infrared detection of solar cell defects under forward bias |
US7705267B2 (en) * | 2005-06-30 | 2010-04-27 | Jon Heyl | Semiconductor failure analysis tool |
EP1905108A2 (en) * | 2005-06-30 | 2008-04-02 | Koninklijke Philips Electronics N.V. | Method for reducing occurrence of short-circuit failure in an organic functional device |
DE102005040010A1 (de) * | 2005-08-23 | 2007-03-15 | Rwe Schott Solar Gmbh | Verfahren und Vorrichtung zur Ermittlung von Produktionsfehlern in einem Halbleiterbau-element |
US7910822B1 (en) * | 2005-10-17 | 2011-03-22 | Solaria Corporation | Fabrication process for photovoltaic cell |
US7847237B2 (en) * | 2006-05-02 | 2010-12-07 | National University Corporation Nara | Method and apparatus for testing and evaluating performance of a solar cell |
US8710860B2 (en) * | 2006-05-05 | 2014-04-29 | Bt Imaging Pty Ltd | Method and system for testing indirect bandgap semiconductor devices using luminescence imaging |
WO2009102949A2 (en) * | 2008-02-13 | 2009-08-20 | Xitronix Corporation | Method and apparatus of z-scan photoreflectance characterization |
US7989729B1 (en) * | 2008-03-11 | 2011-08-02 | Kla-Tencor Corporation | Detecting and repairing defects of photovoltaic devices |
TW200940977A (en) * | 2008-03-19 | 2009-10-01 | Viswell Technology Co Ltd | Optical imaging apparatus and method for inspection of solar cells |
SG158782A1 (en) * | 2008-07-28 | 2010-02-26 | Chan Sok Leng | Method and system for detecting micro-cracks in wafers |
SG158787A1 (en) * | 2008-07-28 | 2010-02-26 | Chan Sok Leng | Apparatus for detecting micro-cracks in wafers and method therefor |
TW201013963A (en) * | 2008-08-15 | 2010-04-01 | Ulvac Inc | Method and apparatus for manufacturing solar battery |
US7979969B2 (en) * | 2008-11-17 | 2011-07-19 | Solopower, Inc. | Method of detecting and passivating a defect in a solar cell |
DE102009021799A1 (de) * | 2009-05-18 | 2010-11-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur ortsaufgelösten Bestimmung des Serienwiderstandes einer Halbleiterstruktur |
US8698083B2 (en) * | 2009-08-04 | 2014-04-15 | National University Corporation NARA Institute of Science and Technology | Solar cell evaluation method, evaluation device, maintenance method, maintenance system, and method of manufacturing solar cell module |
US8940556B2 (en) * | 2010-03-01 | 2015-01-27 | First Solar, Inc | Electrical bias methods and apparatus for photovoltaic device manufacture |
JP5319593B2 (ja) * | 2010-04-09 | 2013-10-16 | 日清紡メカトロニクス株式会社 | 太陽電池の検査方法および検査装置 |
US20110282600A1 (en) * | 2010-05-12 | 2011-11-17 | General Electric Company | System and method for photovoltaic plant power curve measurement and health monitoring |
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-
2014
- 2014-12-24 WO PCT/IB2014/067309 patent/WO2016103007A1/fr active Application Filing
-
2015
- 2015-12-23 PT PT158258608T patent/PT3237894T/pt unknown
- 2015-12-23 EP EP15825860.8A patent/EP3237894B1/fr active Active
- 2015-12-23 US US15/537,662 patent/US10283420B2/en active Active
- 2015-12-23 PL PL15825860T patent/PL3237894T3/pl unknown
- 2015-12-23 HU HUE15825860A patent/HUE050323T2/hu unknown
- 2015-12-23 CA CA2971662A patent/CA2971662C/fr active Active
- 2015-12-23 CN CN201580070740.5A patent/CN107250778B/zh active Active
- 2015-12-23 AU AU2015370408A patent/AU2015370408B2/en active Active
- 2015-12-23 ES ES15825860T patent/ES2775479T3/es active Active
- 2015-12-23 DK DK15825860.8T patent/DK3237894T3/da active
- 2015-12-23 WO PCT/IB2015/059922 patent/WO2016103206A1/fr active Application Filing
- 2015-12-23 KR KR1020177017365A patent/KR102545862B1/ko active Active
-
2020
- 2020-02-24 HR HRP20200304TT patent/HRP20200304T1/hr unknown
Also Published As
Publication number | Publication date |
---|---|
CN107250778A (zh) | 2017-10-13 |
HRP20200304T1 (hr) | 2020-06-12 |
WO2016103206A1 (fr) | 2016-06-30 |
PT3237894T (pt) | 2020-05-04 |
AU2015370408B2 (en) | 2020-09-24 |
US20180005905A1 (en) | 2018-01-04 |
CA2971662A1 (fr) | 2016-06-30 |
KR102545862B1 (ko) | 2023-06-21 |
CA2971662C (fr) | 2023-06-27 |
EP3237894A1 (fr) | 2017-11-01 |
CN107250778B (zh) | 2020-09-22 |
WO2016103007A1 (fr) | 2016-06-30 |
EP3237894B1 (fr) | 2020-02-12 |
US10283420B2 (en) | 2019-05-07 |
DK3237894T3 (da) | 2020-04-27 |
HUE050323T2 (hu) | 2020-11-30 |
ES2775479T3 (es) | 2020-07-27 |
KR20170101216A (ko) | 2017-09-05 |
AU2015370408A1 (en) | 2017-07-13 |
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