NO802032L - Fremgangsmaate for fremstilling av en selvinnrettet gitter felteffekt transistor, og en transistor fremstilt ved denne fremgangsmaaten - Google Patents
Fremgangsmaate for fremstilling av en selvinnrettet gitter felteffekt transistor, og en transistor fremstilt ved denne fremgangsmaatenInfo
- Publication number
- NO802032L NO802032L NO802032A NO802032A NO802032L NO 802032 L NO802032 L NO 802032L NO 802032 A NO802032 A NO 802032A NO 802032 A NO802032 A NO 802032A NO 802032 L NO802032 L NO 802032L
- Authority
- NO
- Norway
- Prior art keywords
- procedure
- self
- manufacturing
- transistor
- field effect
- Prior art date
Links
- 238000000034 method Methods 0.000 title 2
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/061—Manufacture or treatment of FETs having Schottky gates
- H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/139—Schottky barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/951—Lift-off
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7917603A FR2461358A1 (fr) | 1979-07-06 | 1979-07-06 | Procede de realisation d'un transistor a effet de champ a grille auto-alignee, et transistor obtenu par ce procede |
Publications (1)
Publication Number | Publication Date |
---|---|
NO802032L true NO802032L (no) | 1981-01-07 |
Family
ID=9227612
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO802032A NO802032L (no) | 1979-07-06 | 1980-07-04 | Fremgangsmaate for fremstilling av en selvinnrettet gitter felteffekt transistor, og en transistor fremstilt ved denne fremgangsmaaten |
Country Status (5)
Country | Link |
---|---|
US (1) | US4326330A (no) |
EP (1) | EP0022383B1 (no) |
DE (1) | DE3062812D1 (no) |
FR (1) | FR2461358A1 (no) |
NO (1) | NO802032L (no) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1171402B (it) * | 1981-07-20 | 1987-06-10 | Selenia Ind Eletroniche Associ | Transistor ad effeto di campo a barriera metallo-semiconduttorre conzona svuotata modificata |
US4512076A (en) * | 1982-12-20 | 1985-04-23 | Raytheon Company | Semiconductor device fabrication process |
US4486946A (en) * | 1983-07-12 | 1984-12-11 | Control Data Corporation | Method for using titanium-tungsten alloy as a barrier metal in silicon semiconductor processing |
FR2558647B1 (fr) * | 1984-01-23 | 1986-05-09 | Labo Electronique Physique | Transistor a effet de champ de type schottky pour applications hyperfrequences et procede de realisation permettant d'obtenir un tel transistor |
US4888626A (en) * | 1985-03-07 | 1989-12-19 | The United States Of America As Represented By The Secretary Of The Navy | Self-aligned gaas fet with low 1/f noise |
DE3609274A1 (de) * | 1986-03-19 | 1987-09-24 | Siemens Ag | Verfahren zur herstellung eines selbstjustiert positionierten metallkontaktes |
US5411914A (en) * | 1988-02-19 | 1995-05-02 | Massachusetts Institute Of Technology | III-V based integrated circuits having low temperature growth buffer or passivation layers |
US4935384A (en) * | 1988-12-14 | 1990-06-19 | The United States Of America As Represented By The United States Department Of Energy | Method of passivating semiconductor surfaces |
US4996165A (en) * | 1989-04-21 | 1991-02-26 | Rockwell International Corporation | Self-aligned dielectric assisted planarization process |
US5688415A (en) * | 1995-05-30 | 1997-11-18 | Ipec Precision, Inc. | Localized plasma assisted chemical etching through a mask |
US6811853B1 (en) | 2000-03-06 | 2004-11-02 | Shipley Company, L.L.C. | Single mask lithographic process for patterning multiple types of surface features |
US6627096B2 (en) | 2000-05-02 | 2003-09-30 | Shipley Company, L.L.C. | Single mask technique for making positive and negative micromachined features on a substrate |
US6554418B2 (en) | 2001-01-26 | 2003-04-29 | Eastman Kodak Company | Ink jet printing method |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1384028A (en) * | 1972-08-21 | 1974-02-12 | Hughes Aircraft Co | Method of making a semiconductor device |
US3994758A (en) * | 1973-03-19 | 1976-11-30 | Nippon Electric Company, Ltd. | Method of manufacturing a semiconductor device having closely spaced electrodes by perpendicular projection |
US3912546A (en) * | 1974-12-06 | 1975-10-14 | Hughes Aircraft Co | Enhancement mode, Schottky-barrier gate gallium arsenide field effect transistor |
FR2294544A1 (fr) * | 1974-12-13 | 1976-07-09 | Thomson Csf | Procede de fabrication, en circuit integre, de transistors a effet de champ destines a fonctionner en tres haute frequence, et structure ou dispositifs obtenus |
US4040168A (en) * | 1975-11-24 | 1977-08-09 | Rca Corporation | Fabrication method for a dual gate field-effect transistor |
US4111326A (en) * | 1976-03-04 | 1978-09-05 | Becton, Dickinson And Company | Closure for air evacuated container |
DE2631873C2 (de) * | 1976-07-15 | 1986-07-31 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung eines Halbleiterbauelements mit einem Schottky-Kontakt auf einem zu einem anderen Bereich justierten Gatebereich und mit kleinem Serienwiderstand |
US4104672A (en) * | 1976-10-29 | 1978-08-01 | Bell Telephone Laboratories, Incorporated | High power gallium arsenide schottky barrier field effect transistor |
US4193182A (en) * | 1977-02-07 | 1980-03-18 | Hughes Aircraft Company | Passivated V-gate GaAs field-effect transistor and fabrication process therefor |
US4156879A (en) * | 1977-02-07 | 1979-05-29 | Hughes Aircraft Company | Passivated V-gate GaAs field-effect transistor |
US4111725A (en) * | 1977-05-06 | 1978-09-05 | Bell Telephone Laboratories, Incorporated | Selective lift-off technique for fabricating gaas fets |
US4213840A (en) * | 1978-11-13 | 1980-07-22 | Avantek, Inc. | Low-resistance, fine-line semiconductor device and the method for its manufacture |
US4222164A (en) * | 1978-12-29 | 1980-09-16 | International Business Machines Corporation | Method of fabrication of self-aligned metal-semiconductor field effect transistors |
-
1979
- 1979-07-06 FR FR7917603A patent/FR2461358A1/fr active Granted
-
1980
- 1980-06-06 EP EP80400816A patent/EP0022383B1/fr not_active Expired
- 1980-06-06 DE DE8080400816T patent/DE3062812D1/de not_active Expired
- 1980-07-03 US US06/165,777 patent/US4326330A/en not_active Expired - Lifetime
- 1980-07-04 NO NO802032A patent/NO802032L/no unknown
Also Published As
Publication number | Publication date |
---|---|
DE3062812D1 (en) | 1983-05-26 |
EP0022383A1 (fr) | 1981-01-14 |
FR2461358A1 (fr) | 1981-01-30 |
EP0022383B1 (fr) | 1983-04-20 |
US4326330A (en) | 1982-04-27 |
FR2461358B1 (no) | 1982-08-20 |
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