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NO20073342L - Halvlederstruktur, saerlig i en halvlederdetektor og fremgangsmate for drift av denne - Google Patents

Halvlederstruktur, saerlig i en halvlederdetektor og fremgangsmate for drift av denne

Info

Publication number
NO20073342L
NO20073342L NO20073342A NO20073342A NO20073342L NO 20073342 L NO20073342 L NO 20073342L NO 20073342 A NO20073342 A NO 20073342A NO 20073342 A NO20073342 A NO 20073342A NO 20073342 L NO20073342 L NO 20073342L
Authority
NO
Norway
Prior art keywords
area
contact
drain
charge carriers
region
Prior art date
Application number
NO20073342A
Other languages
English (en)
Inventor
Gerhard Lutz
Rainer Richter
Lothar Struder
Original Assignee
Max Planck Gesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Max Planck Gesellschaft filed Critical Max Planck Gesellschaft
Publication of NO20073342L publication Critical patent/NO20073342L/no

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

Oppfinnelsen angår en halvlederdetektor med et halvledersubstrat (HK), et Source-område (S), et Drain-område (13), et eksternt Gate-område (G) og et indre Gate-område (IG) til samling av frie ladningsbærere som ble generert i halvledersubstratet (HK), hvor det indre Gateområdet (IG) i halvledersubstratet (HK) i det minste delvis er anordnet under det eksterne Gate-området (G) for nedenfra å styre ledningskanalen (K) avhengig av de samlede ladningsbærerne, og også med en slette-kontakt (CL) til fjerning av de oppsamlede ladningsbærerne fra det indre Gateområdet (IG), og også med et Drain-slette-område (DCG) som valgfritt kan styres som hjelpe-slettekontakt eller som Drain. Oppfinnelsen forutser i tillegg en Barriere-kontakt (B) som i lateral retning er anordnet mellom det eksterne Gate-området (G) og Drain-slette-området (DCG) for å bygge opp en styrbar potensialbarriere mellom det indre Gateområdet (IG) og slette-kontakten (CL), som forhindrer at ladningsbærerne som er samlet opp i det indre Gate-området (IG) blir suget ut av slettekontakten (CL).
NO20073342A 2006-06-29 2007-06-28 Halvlederstruktur, saerlig i en halvlederdetektor og fremgangsmate for drift av denne NO20073342L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06013518 2006-06-29
EP06016860A EP1873834B1 (de) 2006-06-29 2006-08-11 Löschbarriere, insbesondere für einem Halbleiterdetektor, und zugehöriges Betriebsverfahren

Publications (1)

Publication Number Publication Date
NO20073342L true NO20073342L (no) 2008-01-02

Family

ID=38477245

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20073342A NO20073342L (no) 2006-06-29 2007-06-28 Halvlederstruktur, saerlig i en halvlederdetektor og fremgangsmate for drift av denne

Country Status (3)

Country Link
US (1) US7518203B2 (no)
EP (1) EP1873834B1 (no)
NO (1) NO20073342L (no)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101281148B (zh) * 2007-07-27 2011-01-05 江苏天瑞仪器股份有限公司 一种高分辨率的半导体核辐射探测器
US7968959B2 (en) * 2008-10-17 2011-06-28 The United States Of America As Represented By The Secretary Of The Navy Methods and systems of thick semiconductor drift detector fabrication
DE102009023807A1 (de) * 2009-06-03 2010-12-09 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Halbleiterstruktur, insbesondere BIB-Detektor mit einem DEPFET als Ausleseelement, sowie entsprechendes Betriebsverfahren
DE102011115656B4 (de) 2011-09-28 2014-10-16 Pnsensor Gmbh Halbleiterdetektor mit einem Zwischenspeicher für Signalladungsträger und entsprechendes Betriebsverfahren
DE102014006648A1 (de) 2014-05-07 2015-11-12 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Detektoranordnung und entsprechendes Betriebsverfahren

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3427476A1 (de) 1984-04-25 1985-10-31 Josef Dr. 8048 Haimhausen Kemmer Halbleiterelement
DE3586279D1 (de) 1984-04-25 1992-08-06 Josef Dr Kemmer Verarmtes halbleiterelement mit einem potential-minimum fuer majoritaetstraeger.
US5401952A (en) * 1991-10-25 1995-03-28 Canon Kabushiki Kaisha Signal processor having avalanche photodiodes
IT1290553B1 (it) * 1997-02-27 1998-12-10 Ist Nazionale Fisica Nucleare Rivelatore dell'energia e della posizione di incidenza di radiazioni elettromagnetiche o di particelle ionizzanti a deriva controllata
JPH11164210A (ja) * 1997-11-28 1999-06-18 Nikon Corp 動き検出用固体撮像装置
JP4109858B2 (ja) * 2001-11-13 2008-07-02 株式会社東芝 固体撮像装置
DE10213812B4 (de) 2002-03-27 2007-03-29 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Leitungsüberführung für einen Halbleiter-Detektor
DE102004004283A1 (de) 2004-01-28 2005-08-25 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Halbleiterstruktur

Also Published As

Publication number Publication date
US20080001180A1 (en) 2008-01-03
EP1873834B1 (de) 2008-12-10
US7518203B2 (en) 2009-04-14
EP1873834A1 (de) 2008-01-02

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