NO119149B - - Google Patents
Download PDFInfo
- Publication number
- NO119149B NO119149B NO167625A NO16762567A NO119149B NO 119149 B NO119149 B NO 119149B NO 167625 A NO167625 A NO 167625A NO 16762567 A NO16762567 A NO 16762567A NO 119149 B NO119149 B NO 119149B
- Authority
- NO
- Norway
- Prior art keywords
- layer
- silicon dioxide
- silicon
- silicon nitride
- aluminum oxide
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 20
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 12
- 230000000873 masking effect Effects 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 claims description 8
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 14
- 238000000576 coating method Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000004224 protection Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/113—Nitrides of boron or aluminum or gallium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/114—Nitrides of silicon
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US54117366A | 1966-04-08 | 1966-04-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO119149B true NO119149B (es) | 1970-03-31 |
Family
ID=24158477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO167625A NO119149B (es) | 1966-04-08 | 1967-04-07 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3479237A (es) |
| BE (1) | BE689341A (es) |
| DE (1) | DE1614999B2 (es) |
| ES (1) | ES339478A1 (es) |
| FR (1) | FR1516347A (es) |
| GB (1) | GB1178180A (es) |
| IL (1) | IL27509A (es) |
| NL (1) | NL141329B (es) |
| NO (1) | NO119149B (es) |
| SE (1) | SE313624B (es) |
Families Citing this family (66)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3979768A (en) * | 1966-03-23 | 1976-09-07 | Hitachi, Ltd. | Semiconductor element having surface coating comprising silicon nitride and silicon oxide films |
| NL153374B (nl) * | 1966-10-05 | 1977-05-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze. |
| USRE28402E (en) * | 1967-01-13 | 1975-04-29 | Method for controlling semiconductor surface potential | |
| US3767463A (en) * | 1967-01-13 | 1973-10-23 | Ibm | Method for controlling semiconductor surface potential |
| US3635774A (en) * | 1967-05-04 | 1972-01-18 | Hitachi Ltd | Method of manufacturing a semiconductor device and a semiconductor device obtained thereby |
| US3640782A (en) * | 1967-10-13 | 1972-02-08 | Gen Electric | Diffusion masking in semiconductor preparation |
| USRE28653E (en) * | 1968-04-23 | 1975-12-16 | Method of fabricating semiconductor devices | |
| JPS4813986B1 (es) * | 1968-06-12 | 1973-05-02 | ||
| DE1764759C3 (de) * | 1968-07-31 | 1983-11-10 | Telefunken Patentverwertungsgesellschaft Mbh, 6000 Frankfurt | Verfahren zum Kontaktieren einer Halbleiterzone einer Diode |
| US3923562A (en) * | 1968-10-07 | 1975-12-02 | Ibm | Process for producing monolithic circuits |
| FR2020020B1 (es) * | 1968-10-07 | 1974-09-20 | Ibm | |
| US3607448A (en) * | 1968-10-21 | 1971-09-21 | Hughes Aircraft Co | Chemical milling of silicon carbide |
| JPS492512B1 (es) * | 1969-02-14 | 1974-01-21 | ||
| US3807038A (en) * | 1969-05-22 | 1974-04-30 | Mitsubishi Electric Corp | Process of producing semiconductor devices |
| BE753245A (fr) * | 1969-08-04 | 1970-12-16 | Rca Corp | Procede pour la fabrication de dispositifs semiconducteurs |
| US3675314A (en) * | 1970-03-12 | 1972-07-11 | Alpha Ind Inc | Method of producing semiconductor devices |
| US3838442A (en) * | 1970-04-15 | 1974-09-24 | Ibm | Semiconductor structure having metallization inlaid in insulating layers and method for making same |
| FR2134172B1 (es) * | 1971-04-23 | 1977-03-18 | Radiotechnique Compelec | |
| US3964940A (en) * | 1971-09-10 | 1976-06-22 | Plessey Handel Und Investments A.G. | Methods of producing gallium phosphide yellow light emitting diodes |
| US3941905A (en) * | 1971-10-12 | 1976-03-02 | Pavena Ag | Method of continuously impregnating a textile fiber arrangement with liquids |
| US3860466A (en) * | 1971-10-22 | 1975-01-14 | Texas Instruments Inc | Nitride composed masking for integrated circuits |
| US3725151A (en) * | 1971-10-29 | 1973-04-03 | Motorola Inc | Method of making an igfet defice with reduced gate-to- drain overlap capacitance |
| US3725150A (en) * | 1971-10-29 | 1973-04-03 | Motorola Inc | Process for making a fine geometry, self-aligned device structure |
| US3787106A (en) * | 1971-11-09 | 1974-01-22 | Owens Illinois Inc | Monolithically structured gas discharge device and method of fabrication |
| JPS5538823B2 (es) * | 1971-12-22 | 1980-10-07 | ||
| US3961414A (en) * | 1972-06-09 | 1976-06-08 | International Business Machines Corporation | Semiconductor structure having metallization inlaid in insulating layers and method for making same |
| US3771218A (en) * | 1972-07-13 | 1973-11-13 | Ibm | Process for fabricating passivated transistors |
| US3926694A (en) * | 1972-07-24 | 1975-12-16 | Signetics Corp | Double diffused metal oxide semiconductor structure with isolated source and drain and method |
| US3885994A (en) * | 1973-05-25 | 1975-05-27 | Trw Inc | Bipolar transistor construction method |
| US3911168A (en) * | 1973-06-01 | 1975-10-07 | Fairchild Camera Instr Co | Method for forming a continuous layer of silicon dioxide over a substrate |
| US3873372A (en) * | 1973-07-09 | 1975-03-25 | Ibm | Method for producing improved transistor devices |
| US3900352A (en) * | 1973-11-01 | 1975-08-19 | Ibm | Isolated fixed and variable threshold field effect transistor fabrication technique |
| US3904454A (en) * | 1973-12-26 | 1975-09-09 | Ibm | Method for fabricating minute openings in insulating layers during the formation of integrated circuits |
| US3947298A (en) * | 1974-01-25 | 1976-03-30 | Raytheon Company | Method of forming junction regions utilizing R.F. sputtering |
| US3899373A (en) * | 1974-05-20 | 1975-08-12 | Ibm | Method for forming a field effect device |
| FR2288392A1 (fr) * | 1974-10-18 | 1976-05-14 | Radiotechnique Compelec | Procede de realisation de dispositifs semiconducteurs |
| DE2452289A1 (de) * | 1974-11-04 | 1976-05-06 | Siemens Ag | Halbleiterbauelement |
| JPS5193874A (en) * | 1975-02-15 | 1976-08-17 | Handotaisochino seizohoho | |
| US3976511A (en) * | 1975-06-30 | 1976-08-24 | Ibm Corporation | Method for fabricating integrated circuit structures with full dielectric isolation by ion bombardment |
| US4021270A (en) * | 1976-06-28 | 1977-05-03 | Motorola, Inc. | Double master mask process for integrated circuit manufacture |
| US4140547A (en) * | 1976-09-09 | 1979-02-20 | Tokyo Shibaura Electric Co., Ltd. | Method for manufacturing MOSFET devices by ion-implantation |
| US4092211A (en) * | 1976-11-18 | 1978-05-30 | Northern Telecom Limited | Control of etch rate of silicon dioxide in boiling phosphoric acid |
| DE2658124C3 (de) * | 1976-12-22 | 1982-05-06 | Dynamit Nobel Ag, 5210 Troisdorf | Verfahren zur Herstellung von Elektroschmelzkorund |
| US4092442A (en) * | 1976-12-30 | 1978-05-30 | International Business Machines Corporation | Method of depositing thin films utilizing a polyimide mask |
| NL7706802A (nl) * | 1977-06-21 | 1978-12-27 | Philips Nv | Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze. |
| US4135954A (en) * | 1977-07-12 | 1979-01-23 | International Business Machines Corporation | Method for fabricating self-aligned semiconductor devices utilizing selectively etchable masking layers |
| US4360900A (en) * | 1978-11-27 | 1982-11-23 | Texas Instruments Incorporated | Non-volatile semiconductor memory elements |
| US4226932A (en) * | 1979-07-05 | 1980-10-07 | Gte Automatic Electric Laboratories Incorporated | Titanium nitride as one layer of a multi-layered coating intended to be etched |
| US4394406A (en) * | 1980-06-30 | 1983-07-19 | International Business Machines Corp. | Double polysilicon contact structure and process |
| US4367119A (en) * | 1980-08-18 | 1983-01-04 | International Business Machines Corporation | Planar multi-level metal process with built-in etch stop |
| US4358326A (en) * | 1980-11-03 | 1982-11-09 | International Business Machines Corporation | Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing |
| FR2535525A1 (fr) * | 1982-10-29 | 1984-05-04 | Western Electric Co | Procede de fabrication de circuits integres comportant des couches isolantes minces |
| US4579812A (en) * | 1984-02-03 | 1986-04-01 | Advanced Micro Devices, Inc. | Process for forming slots of different types in self-aligned relationship using a latent image mask |
| US4745089A (en) * | 1987-06-11 | 1988-05-17 | General Electric Company | Self-aligned barrier metal and oxidation mask method |
| US5290396A (en) * | 1991-06-06 | 1994-03-01 | Lsi Logic Corporation | Trench planarization techniques |
| US5413966A (en) * | 1990-12-20 | 1995-05-09 | Lsi Logic Corporation | Shallow trench etch |
| US5248625A (en) * | 1991-06-06 | 1993-09-28 | Lsi Logic Corporation | Techniques for forming isolation structures |
| US5252503A (en) * | 1991-06-06 | 1993-10-12 | Lsi Logic Corporation | Techniques for forming isolation structures |
| US5225358A (en) * | 1991-06-06 | 1993-07-06 | Lsi Logic Corporation | Method of forming late isolation with polishing |
| US5286344A (en) * | 1992-06-15 | 1994-02-15 | Micron Technology, Inc. | Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride |
| US5880036A (en) * | 1992-06-15 | 1999-03-09 | Micron Technology, Inc. | Method for enhancing oxide to nitride selectivity through the use of independent heat control |
| US5523590A (en) * | 1993-10-20 | 1996-06-04 | Oki Electric Industry Co., Ltd. | LED array with insulating films |
| US6022751A (en) * | 1996-10-24 | 2000-02-08 | Canon Kabushiki Kaisha | Production of electronic device |
| US6444592B1 (en) | 2000-06-20 | 2002-09-03 | International Business Machines Corporation | Interfacial oxidation process for high-k gate dielectric process integration |
| CN100539035C (zh) * | 2004-09-10 | 2009-09-09 | 中芯国际集成电路制造(上海)有限公司 | 半导体集成电路硅单晶片衬底背面氮化硅层的新腐蚀方法 |
| TWI534247B (zh) * | 2013-01-31 | 2016-05-21 | An etch paste for etching an indium tin oxide conductive film |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3406043A (en) * | 1964-11-09 | 1968-10-15 | Western Electric Co | Integrated circuit containing multilayer tantalum compounds |
-
1966
- 1966-04-08 US US541173A patent/US3479237A/en not_active Expired - Lifetime
- 1966-11-07 BE BE689341D patent/BE689341A/xx not_active IP Right Cessation
-
1967
- 1967-02-24 FR FR96509A patent/FR1516347A/fr not_active Expired
- 1967-02-28 IL IL27509A patent/IL27509A/en unknown
- 1967-03-21 GB GB03095/67A patent/GB1178180A/en not_active Expired
- 1967-04-03 DE DE19671614999 patent/DE1614999B2/de not_active Ceased
- 1967-04-07 NO NO167625A patent/NO119149B/no unknown
- 1967-04-07 NL NL676704958A patent/NL141329B/xx not_active IP Right Cessation
- 1967-04-07 ES ES339478A patent/ES339478A1/es not_active Expired
- 1967-04-07 SE SE4869/67A patent/SE313624B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1614999A1 (de) | 1971-01-14 |
| DE1614999B2 (de) | 1971-07-29 |
| BE689341A (es) | 1967-04-14 |
| SE313624B (es) | 1969-08-18 |
| IL27509A (en) | 1970-09-17 |
| GB1178180A (en) | 1970-01-21 |
| FR1516347A (fr) | 1968-03-08 |
| NL6704958A (es) | 1967-10-09 |
| NL141329B (nl) | 1974-02-15 |
| ES339478A1 (es) | 1968-05-01 |
| US3479237A (en) | 1969-11-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NO119149B (es) | ||
| US4617087A (en) | Method for differential selective deposition of metal for fabricating metal contacts in integrated semiconductor circuits | |
| US4269654A (en) | Silicon nitride and silicon oxide etchant | |
| KR970011134B1 (ko) | 반도체 소자 제조 공정 | |
| US4363868A (en) | Process of producing semiconductor devices by forming a silicon oxynitride layer by a plasma CVD technique which is employed in a selective oxidation process | |
| US5814545A (en) | Semiconductor device having a phosphorus doped PECVD film and a method of manufacture | |
| US5312781A (en) | Flash EEPROM fabrication process that uses a selective wet chemical etch | |
| US3573096A (en) | Silane method for making silicon nitride | |
| JPH04233734A (ja) | 弗素化窒化珪素を付着する方法 | |
| US3657030A (en) | Technique for masking silicon nitride during phosphoric acid etching | |
| US4125427A (en) | Method of processing a semiconductor | |
| US4040893A (en) | Method of selective etching of materials utilizing masks of binary silicate glasses | |
| US3436285A (en) | Coatings on germanium bodies | |
| Ahmed et al. | Borophosphosilicate glass crystal induction and suppression | |
| US3592707A (en) | Precision masking using silicon nitride and silicon oxide | |
| KR100497474B1 (ko) | 반도체소자의 게이트전극 형성방법 | |
| CA1096136A (en) | Phosphorus-nitrogen-oxygen composition and method for making such composition and applications of the same | |
| US5977608A (en) | Modified poly-buffered isolation | |
| US4289539A (en) | Phosphorus-nitrogen-oxygen composition and method for making such composition and applications of the same | |
| Baliga et al. | PSG masks for diffusions in gallium arsenide | |
| JPH07135247A (ja) | 半導体装置の製造方法 | |
| JPS5764927A (en) | Manufacture of semiconductor device | |
| KR940010245A (ko) | 반도체소자의 콘택홀 및 그 제조방법 | |
| KR100933809B1 (ko) | 듀얼 게이트 산화막 형성 방법 | |
| JPH07263547A (ja) | 半導体装置の製造方法 |