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NL8002144A - Werkwijze voor de vervaardiging van gadolinium- -galliumgranaat. - Google Patents

Werkwijze voor de vervaardiging van gadolinium- -galliumgranaat. Download PDF

Info

Publication number
NL8002144A
NL8002144A NL8002144A NL8002144A NL8002144A NL 8002144 A NL8002144 A NL 8002144A NL 8002144 A NL8002144 A NL 8002144A NL 8002144 A NL8002144 A NL 8002144A NL 8002144 A NL8002144 A NL 8002144A
Authority
NL
Netherlands
Prior art keywords
iridium
crucible
melt
compartment
oxygen
Prior art date
Application number
NL8002144A
Other languages
English (en)
Dutch (nl)
Original Assignee
Union Carbide Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Carbide Corp filed Critical Union Carbide Corp
Publication of NL8002144A publication Critical patent/NL8002144A/nl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Soft Magnetic Materials (AREA)
NL8002144A 1979-04-12 1980-04-11 Werkwijze voor de vervaardiging van gadolinium- -galliumgranaat. NL8002144A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2921679A 1979-04-12 1979-04-12
US2921679 1979-04-12

Publications (1)

Publication Number Publication Date
NL8002144A true NL8002144A (nl) 1980-10-14

Family

ID=21847874

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8002144A NL8002144A (nl) 1979-04-12 1980-04-11 Werkwijze voor de vervaardiging van gadolinium- -galliumgranaat.

Country Status (7)

Country Link
JP (1) JPS5918360B2 (fr)
CA (1) CA1171341A (fr)
CH (1) CH646402A5 (fr)
DE (1) DE3013045C2 (fr)
FR (1) FR2453916A1 (fr)
GB (1) GB2047113B (fr)
NL (1) NL8002144A (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605094A (ja) * 1983-06-13 1985-01-11 Shin Etsu Chem Co Ltd ガリウムガ−ネツト単結晶の製造方法
FR2548689B1 (fr) * 1983-07-07 1985-11-08 Crismatec Procede de fabrication de monocristaux de germanate de bismuth a fort rendement de scintillation
US6451711B1 (en) * 2000-05-04 2002-09-17 Osemi, Incorporated Epitaxial wafer apparatus
US6936900B1 (en) 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US7187045B2 (en) 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
EP2841630B1 (fr) 2012-04-24 2017-04-12 Forschungsverbund Berlin E.V. Procédé et appareil pour la croissance de monocristaux d'oxyde d'indium (in2o3) et monocristal d'oxyde d'indium (in2o3)
CN104313693B (zh) * 2014-09-19 2017-01-18 北京雷生强式科技有限责任公司 掺杂钇铝石榴石激光晶体的生长装置、晶体生长炉及制备方法
WO2021031139A1 (fr) * 2019-08-21 2021-02-25 眉山博雅新材料有限公司 Procédé et équipement de croissance de cristaux scintillateurs à structure grenat à composants multiples

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3723599A (en) * 1971-08-18 1973-03-27 Bell Telephone Labor Inc Technique for growth of single crystal gallium garnet
CA1080589A (fr) * 1976-06-24 1980-07-01 Union Carbide Corporation Production de cristaux uniques de gallium-gadolinium

Also Published As

Publication number Publication date
JPS55136200A (en) 1980-10-23
GB2047113A (en) 1980-11-26
CA1171341A (fr) 1984-07-24
DE3013045C2 (de) 1983-11-03
GB2047113B (en) 1983-08-03
FR2453916A1 (fr) 1980-11-07
CH646402A5 (fr) 1984-11-30
JPS5918360B2 (ja) 1984-04-26
DE3013045A1 (de) 1980-10-16

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
A85 Still pending on 85-01-01
BV The patent application has lapsed