NL7809866A - SOLID-STATE IMAGE DETECTION DEVICE. - Google Patents
SOLID-STATE IMAGE DETECTION DEVICE.Info
- Publication number
- NL7809866A NL7809866A NL7809866A NL7809866A NL7809866A NL 7809866 A NL7809866 A NL 7809866A NL 7809866 A NL7809866 A NL 7809866A NL 7809866 A NL7809866 A NL 7809866A NL 7809866 A NL7809866 A NL 7809866A
- Authority
- NL
- Netherlands
- Prior art keywords
- solid
- detection device
- state image
- image detection
- state
- Prior art date
Links
- 238000001514 detection method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
- H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/571—Control of the dynamic range involving a non-linear response
- H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Picture Signal Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12688577A JPS5451318A (en) | 1977-09-29 | 1977-09-29 | Solid pickup unit |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7809866A true NL7809866A (en) | 1979-04-02 |
Family
ID=14946246
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7809866A NL7809866A (en) | 1977-09-29 | 1978-09-29 | SOLID-STATE IMAGE DETECTION DEVICE. |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5451318A (en) |
CA (1) | CA1125421A (en) |
DE (1) | DE2842346C2 (en) |
FR (1) | FR2409646A1 (en) |
GB (1) | GB2007937B (en) |
NL (1) | NL7809866A (en) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55151592U (en) * | 1979-04-19 | 1980-10-31 | ||
JPS55163882A (en) * | 1979-06-06 | 1980-12-20 | Nec Corp | System for driving charge transfer element |
JPS55163953A (en) * | 1979-06-08 | 1980-12-20 | Nec Corp | Ccd shift register |
JPS55163956A (en) * | 1979-06-08 | 1980-12-20 | Nec Corp | Shift register and its driving method |
DE2939403A1 (en) * | 1979-09-28 | 1981-04-16 | Siemens AG, 1000 Berlin und 8000 München | MONOLITHICALLY INTEGRATED CIRCUIT FOR LINE SCREENING |
JPS5665578A (en) * | 1979-10-31 | 1981-06-03 | Fujitsu Ltd | Two dimensional solidstate image sensor |
JPS5685981A (en) * | 1979-12-15 | 1981-07-13 | Sharp Corp | Solid image pickup apparatus |
JPS56104582A (en) * | 1980-01-25 | 1981-08-20 | Toshiba Corp | Solid image pickup device |
JPS56136086A (en) * | 1980-03-27 | 1981-10-23 | Fujitsu Ltd | Two-dimensional image pickup device |
JPS56160081A (en) * | 1980-05-14 | 1981-12-09 | Matsushita Electronics Corp | Solid state image pickup apparatus |
EP0065599B1 (en) * | 1981-05-19 | 1986-01-29 | Texas Instruments Incorporated | Infrared imaging system with infrared detector matrix, and method of imaging infrared energy |
DE3121494A1 (en) * | 1981-05-29 | 1983-01-05 | Siemens AG, 1000 Berlin und 8000 München | ARRANGEMENT FOR THE CONTACTLESS MEASUREMENT OF ELECTRICAL CHARGE IMAGES IN ELECTRORADIOGRAPHIC RECORDING METHODS |
EP0066020B1 (en) * | 1981-06-03 | 1985-10-23 | Texas Instruments Incorporated | Infrared energy detector system utilizing a charge transfer device sensor |
JPS586682A (en) * | 1981-07-06 | 1983-01-14 | Sony Corp | Solid-state image pickup device |
JPS5847378A (en) * | 1981-09-17 | 1983-03-19 | Canon Inc | Image pickup element |
JPS58142570A (en) * | 1982-02-19 | 1983-08-24 | Sony Corp | solid-state imaging device |
JPS60254770A (en) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | Charge transfer device |
JPS61144874A (en) * | 1984-12-19 | 1986-07-02 | Toshiba Corp | charge transfer device |
NL8503243A (en) * | 1985-11-25 | 1987-06-16 | Optische Ind De Oude Delft Nv | IMAGE RECORDING DEVICE FOR DIGITAL RADIOGRAPHY. |
JPH07107928B2 (en) * | 1986-03-25 | 1995-11-15 | ソニー株式会社 | Solid-state imaging device |
JPH02113678A (en) * | 1988-10-21 | 1990-04-25 | Nec Corp | solid state imaging device |
US5055667A (en) * | 1990-06-21 | 1991-10-08 | Loral Fairchild Corporation | Non-linear photosite response in CCD imagers |
US5276520A (en) * | 1991-06-07 | 1994-01-04 | Eastman Kodak Company | Enhancing exposure latitude of image sensors |
FR2687265A1 (en) * | 1993-01-08 | 1993-08-13 | Scanera Sc | Electronic image acquisition device with very high dynamic range, and method of acquiring images of very highly contrasted scenes |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5654115B2 (en) * | 1974-03-29 | 1981-12-23 | ||
US3931465A (en) * | 1975-01-13 | 1976-01-06 | Rca Corporation | Blooming control for charge coupled imager |
JPS5937629B2 (en) * | 1975-01-30 | 1984-09-11 | ソニー株式会社 | solid-state imaging body |
US3953733A (en) * | 1975-05-21 | 1976-04-27 | Rca Corporation | Method of operating imagers |
JPS5846905B2 (en) * | 1975-11-10 | 1983-10-19 | ソニー株式会社 | Kotai Satsuzou Sochi |
JPS52109825A (en) * | 1976-03-11 | 1977-09-14 | Sony Corp | Solid state pick up unit |
-
1977
- 1977-09-29 JP JP12688577A patent/JPS5451318A/en active Pending
-
1978
- 1978-09-22 FR FR7827214A patent/FR2409646A1/en active Granted
- 1978-09-28 GB GB7838523A patent/GB2007937B/en not_active Expired
- 1978-09-28 CA CA312,252A patent/CA1125421A/en not_active Expired
- 1978-09-28 DE DE2842346A patent/DE2842346C2/en not_active Expired
- 1978-09-29 NL NL7809866A patent/NL7809866A/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
DE2842346C2 (en) | 1987-05-14 |
FR2409646A1 (en) | 1979-06-15 |
CA1125421A (en) | 1982-06-08 |
GB2007937A (en) | 1979-05-23 |
DE2842346A1 (en) | 1979-04-12 |
JPS5451318A (en) | 1979-04-23 |
FR2409646B1 (en) | 1983-11-18 |
GB2007937B (en) | 1982-03-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A85 | Still pending on 85-01-01 | ||
BA | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
BV | The patent application has lapsed |