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NL7707979A - PROCEDURE FOR INCREASING THE TEMPERATURE REACHED BY INDUCTION HEATING IN THIN CARBON PLATES. - Google Patents

PROCEDURE FOR INCREASING THE TEMPERATURE REACHED BY INDUCTION HEATING IN THIN CARBON PLATES.

Info

Publication number
NL7707979A
NL7707979A NL7707979A NL7707979A NL7707979A NL 7707979 A NL7707979 A NL 7707979A NL 7707979 A NL7707979 A NL 7707979A NL 7707979 A NL7707979 A NL 7707979A NL 7707979 A NL7707979 A NL 7707979A
Authority
NL
Netherlands
Prior art keywords
procedure
increasing
induction heating
temperature reached
thin carbon
Prior art date
Application number
NL7707979A
Other languages
Dutch (nl)
Original Assignee
Wacker Chemitronic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemitronic filed Critical Wacker Chemitronic
Publication of NL7707979A publication Critical patent/NL7707979A/en

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00Heating by electric, magnetic or electromagnetic fields
    • H05B6/02Induction heating
    • H05B6/10Induction heating apparatus, other than furnaces, for specific applications
    • H05B6/105Induction heating apparatus, other than furnaces, for specific applications using a susceptor
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/12Substrate holders or susceptors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00Heating by electric, magnetic or electromagnetic fields
    • H05B6/02Induction heating
    • H05B6/10Induction heating apparatus, other than furnaces, for specific applications

Landscapes

  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL7707979A 1976-09-16 1977-07-18 PROCEDURE FOR INCREASING THE TEMPERATURE REACHED BY INDUCTION HEATING IN THIN CARBON PLATES. NL7707979A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762641723 DE2641723A1 (en) 1976-09-16 1976-09-16 Induction heating system for thin carbon plates - uses second identical plate to raise temp. for coating with silicon carbide

Publications (1)

Publication Number Publication Date
NL7707979A true NL7707979A (en) 1978-03-20

Family

ID=5988090

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7707979A NL7707979A (en) 1976-09-16 1977-07-18 PROCEDURE FOR INCREASING THE TEMPERATURE REACHED BY INDUCTION HEATING IN THIN CARBON PLATES.

Country Status (2)

Country Link
DE (1) DE2641723A1 (en)
NL (1) NL7707979A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO881270L (en) * 1987-05-14 1988-11-15 Dow Corning PROCEDURE FOR AA REDUCING CARBON CONTENT IN SEMI-CONDUCTORS.
JP2548949B2 (en) * 1987-09-01 1996-10-30 東芝セラミックス株式会社 Semiconductor manufacturing components

Also Published As

Publication number Publication date
DE2641723A1 (en) 1978-03-30

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Legal Events

Date Code Title Description
BV The patent application has lapsed