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NL7606746A - Halfgeleiderinrichting. - Google Patents

Halfgeleiderinrichting.

Info

Publication number
NL7606746A
NL7606746A NL7606746A NL7606746A NL7606746A NL 7606746 A NL7606746 A NL 7606746A NL 7606746 A NL7606746 A NL 7606746A NL 7606746 A NL7606746 A NL 7606746A NL 7606746 A NL7606746 A NL 7606746A
Authority
NL
Netherlands
Prior art keywords
semi
guide device
guide
Prior art date
Application number
NL7606746A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of NL7606746A publication Critical patent/NL7606746A/nl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454—Output structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
NL7606746A 1975-06-26 1976-06-22 Halfgeleiderinrichting. NL7606746A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB27093/75A GB1548877A (en) 1975-06-26 1975-06-26 Semiconductor devices
GB4889475 1975-11-27

Publications (1)

Publication Number Publication Date
NL7606746A true NL7606746A (nl) 1976-12-28

Family

ID=26258625

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7606746A NL7606746A (nl) 1975-06-26 1976-06-22 Halfgeleiderinrichting.

Country Status (12)

Country Link
US (1) US4074302A (nl)
JP (2) JPS5217772A (nl)
AU (1) AU504261B2 (nl)
CA (1) CA1078516A (nl)
CH (1) CH613308A5 (nl)
DE (1) DE2628532C2 (nl)
ES (1) ES449176A1 (nl)
FR (1) FR2334172B1 (nl)
GB (1) GB1548877A (nl)
IT (1) IT1063691B (nl)
NL (1) NL7606746A (nl)
SE (1) SE410911B (nl)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166223A (en) * 1978-02-06 1979-08-28 Westinghouse Electric Corp. Dual field effect transistor structure for compensating effects of threshold voltage
US4223329A (en) * 1978-06-30 1980-09-16 International Business Machines Corporation Bipolar dual-channel charge-coupled device

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5462462U (nl) * 1977-10-11 1979-05-01
US4672645A (en) * 1978-10-23 1987-06-09 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
US4559638A (en) * 1978-10-23 1985-12-17 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
US4227201A (en) * 1979-01-22 1980-10-07 Hughes Aircraft Company CCD Readout structure for display applications
CA1164562A (en) * 1980-10-08 1984-03-27 Manabu Itsumi Semiconductor memory device
US4693561A (en) * 1985-12-23 1987-09-15 The United States Of America As Represented By The Secretary Of The Army Amorphous silicon spatial light modulator
JPH04133336A (ja) * 1990-09-25 1992-05-07 Mitsubishi Electric Corp 電荷転送装置
JPH04148536A (ja) * 1990-10-12 1992-05-21 Sony Corp 転送電荷増幅装置
JP3036175B2 (ja) * 1991-11-11 2000-04-24 日本電気株式会社 電荷転送装置
JP2780564B2 (ja) * 1992-05-20 1998-07-30 日本電気株式会社 電荷転送装置
US5331165A (en) * 1992-12-01 1994-07-19 Ball Corporation Split event reduced x-ray imager
US5436476A (en) * 1993-04-14 1995-07-25 Texas Instruments Incorporated CCD image sensor with active transistor pixel
JP2696057B2 (ja) * 1993-05-11 1998-01-14 ニチモウ株式会社 穀類を原料とした生成物の製造方法
US5369047A (en) * 1993-07-01 1994-11-29 Texas Instruments Incorporated Method of making a BCD low noise high sensitivity charge detection amplifier for high performance image sensors
US5357128A (en) * 1993-08-27 1994-10-18 Goldstar Electron Co., Ltd. Charge detecting device
JP3031815B2 (ja) * 1994-04-01 2000-04-10 シャープ株式会社 電荷検出素子及びその製造方法並びに電荷転送検出装置
JPH09502572A (ja) * 1994-06-23 1997-03-11 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 電荷結合装置及びこの装置を具える撮像装置
JP2816824B2 (ja) * 1995-09-11 1998-10-27 エルジイ・セミコン・カンパニイ・リミテッド Ｃｃｄ固体撮像素子
WO1997012402A1 (en) * 1995-09-29 1997-04-03 Analog Devices, Inc. Semiconductor charge potential wells with integrated diffusions
US5838034A (en) * 1996-12-10 1998-11-17 National Science Council Infrared optical bulk channel field effect transistor for greater effectiveness
DE19941148B4 (de) * 1999-08-30 2006-08-10 Infineon Technologies Ag Speicher mit Grabenkondensator und Auswahltransistor und Verfahren zu seiner Herstellung
ES2339643T3 (es) * 2003-09-02 2010-05-24 Vrije Universiteit Brussel Detector de radiacion electromagnetica asistido por corriente de portadores mayoritarios.
US8906563B2 (en) 2011-11-04 2014-12-09 Fluidic, Inc. Internal convection cell
DE102012206089B4 (de) 2012-03-15 2017-02-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterstruktur, verfahren zum betreiben derselben und herstellungsverfahren
WO2017057112A1 (ja) * 2015-10-02 2017-04-06 国立研究開発法人産業技術総合研究所 マルチプレクサ及びこれを用いた集積回路
EP3491690B1 (en) 2016-07-22 2020-07-15 NantEnergy, Inc. Moisture and carbon dioxide management system in electrochemical cells
EP3488488B1 (en) 2016-07-22 2020-06-03 NantEnergy, Inc. Mist elimination system for electrochemical cells
WO2020006506A2 (en) 2018-06-29 2020-01-02 Form Energy Inc. Rolling diaphragm seal
CN109728020A (zh) * 2018-12-29 2019-05-07 中国电子科技集团公司第四十四研究所 一种三相驱动结构ccd的水平区结构及其驱动电路
CN112420808A (zh) * 2020-11-10 2021-02-26 浙江大学杭州国际科创中心 石墨烯/硅基体沟道电子倍增电荷耦合器件及其读出方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3739240A (en) * 1971-04-06 1973-06-12 Bell Telephone Labor Inc Buried channel charge coupled devices
NL176406C (nl) * 1971-10-27 1985-04-01 Philips Nv Ladingsgekoppelde halfgeleiderinrichting met een halfgeleiderlichaam bevattende een aan een oppervlak grenzende halfgeleiderlaag en middelen om informatie in de vorm van pakketten meerderheidsladingsdragers in te voeren in de halfgeleiderlaag.
NL165886C (nl) * 1972-04-03 1981-05-15 Hitachi Ltd Halfgeleiderinrichting van het ladingsgekoppelde type voor het opslaan en in volgorgde overdragen van pakketten meerderheidsladingdragers.
GB1457253A (en) * 1972-12-01 1976-12-01 Mullard Ltd Semiconductor charge transfer devices
NL181766C (nl) * 1973-03-19 1987-10-16 Philips Nv Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen.
JPS5028281A (nl) * 1973-07-13 1975-03-22
US3987475A (en) * 1975-11-10 1976-10-19 Northern Electric Company Limited Nondestructive charge sensing in a charge coupled device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166223A (en) * 1978-02-06 1979-08-28 Westinghouse Electric Corp. Dual field effect transistor structure for compensating effects of threshold voltage
US4223329A (en) * 1978-06-30 1980-09-16 International Business Machines Corporation Bipolar dual-channel charge-coupled device

Also Published As

Publication number Publication date
GB1548877A (en) 1979-07-18
IT1063691B (it) 1985-02-11
CH613308A5 (nl) 1979-09-14
FR2334172B1 (fr) 1984-03-23
JPS56162870A (en) 1981-12-15
DE2628532C2 (de) 1985-03-07
SE7607216L (sv) 1976-12-27
AU1511876A (en) 1978-01-05
JPS5711506B2 (nl) 1982-03-04
DE2628532A1 (de) 1977-02-10
AU504261B2 (en) 1979-10-11
JPS5217772A (en) 1977-02-09
ES449176A1 (es) 1977-12-01
FR2334172A1 (fr) 1977-07-01
SE410911B (sv) 1979-11-12
CA1078516A (en) 1980-05-27
US4074302A (en) 1978-02-14

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Legal Events

Date Code Title Description
BV The patent application has lapsed