NL7512544A - Werkwijze ter bereiding van nieuwe siliciumkris- tallen. - Google Patents
Werkwijze ter bereiding van nieuwe siliciumkris- tallen.Info
- Publication number
- NL7512544A NL7512544A NL7512544A NL7512544A NL7512544A NL 7512544 A NL7512544 A NL 7512544A NL 7512544 A NL7512544 A NL 7512544A NL 7512544 A NL7512544 A NL 7512544A NL 7512544 A NL7512544 A NL 7512544A
- Authority
- NL
- Netherlands
- Prior art keywords
- silicon crystals
- preparing new
- new silicon
- preparing
- crystals
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 239000013078 crystal Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
- B22D27/04—Influencing the temperature of the metal, e.g. by heating or cooling the mould
- B22D27/045—Directionally solidified castings
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2508803A DE2508803C3 (de) | 1975-02-28 | 1975-02-28 | Verfahren zur Herstellung plattenförmiger Siliciumkristalle mit Kolumnarstruktur |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7512544A true NL7512544A (nl) | 1976-08-31 |
NL177612B NL177612B (nl) | 1985-05-17 |
NL177612C NL177612C (nl) | 1985-10-16 |
Family
ID=5940115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7512544,A NL177612C (nl) | 1975-02-28 | 1975-10-27 | Werkwijzen voor het vervaardigen van een plaatvormig lichaam van kristallijn silicium. |
Country Status (24)
Country | Link |
---|---|
US (1) | US4382838A (nl) |
JP (1) | JPS5330988B2 (nl) |
AU (1) | AU499586B2 (nl) |
BE (1) | BE839008A (nl) |
CA (1) | CA1061688A (nl) |
CH (1) | CH604884A5 (nl) |
CS (1) | CS199607B2 (nl) |
DD (1) | DD122478A5 (nl) |
DE (1) | DE2508803C3 (nl) |
DK (1) | DK145828C (nl) |
ES (1) | ES445617A1 (nl) |
FR (1) | FR2302132A1 (nl) |
GB (1) | GB1539244A (nl) |
HU (1) | HU172435B (nl) |
IL (1) | IL47862A (nl) |
IN (1) | IN143325B (nl) |
IT (1) | IT1053650B (nl) |
NL (1) | NL177612C (nl) |
PL (1) | PL98068B1 (nl) |
RO (1) | RO72156A (nl) |
SE (1) | SE408760B (nl) |
SU (1) | SU695531A3 (nl) |
YU (1) | YU291675A (nl) |
ZA (1) | ZA757846B (nl) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2745247C3 (de) * | 1977-10-07 | 1980-03-13 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verfahren und Vorrichtung zur semikontinuierlichen Herstellung von Siliciumformkörpern |
JPS5460584A (en) * | 1977-10-24 | 1979-05-16 | Agency Of Ind Science & Technol | Solar battery using silicon ribbon crystal |
JPS54121086A (en) * | 1978-03-14 | 1979-09-19 | Agency Of Ind Science & Technol | Forming method of silicon plate |
DE2850790C2 (de) * | 1978-11-23 | 1987-02-19 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von scheiben- oder bandförmigen Siliziumkristallen mit Kolumnarstruktur für Solarzellen |
DE2850805C2 (de) * | 1978-11-23 | 1986-08-28 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von scheiben- oder bandförmigen Siliziumkristallen mit Kolumnarstruktur für Solarzellen |
DE2927086C2 (de) * | 1979-07-04 | 1987-02-05 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von platten- oder bandförmigen Siliziumkristallkörpern mit Säulenstruktur für Solarzellen |
DE2929669A1 (de) | 1979-07-21 | 1981-01-29 | Licentia Gmbh | Gemisch eines loesungsmittels fuer die galvanische abscheidung |
DE3019653A1 (de) * | 1980-05-22 | 1981-11-26 | SIEMENS AG AAAAA, 1000 Berlin und 8000 München | Verbesserung eines verfahres zur herstellung von platten-, band- oder folienfoermigen siliziumkristallkoerpern fuer solarzellen |
DE3019635A1 (de) * | 1980-05-22 | 1981-11-26 | SIEMENS AG AAAAA, 1000 Berlin und 8000 München | Verbesserung eines verfahrens zur herstellung von platten-, band- oder folienfoermigen siliziumkristallkoerpern fuer solarzellen |
EP0055318B1 (en) * | 1980-12-31 | 1985-10-23 | Solarex Corporation | Method of producing semicrystalline silicon and products formed thereby |
JPS57160174A (en) * | 1981-03-30 | 1982-10-02 | Hitachi Ltd | Thin film solar battery |
DE3226931A1 (de) * | 1982-07-19 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum herstellen von grossflaechigen, fuer die fertigung von solarzellen verwendbaren bandfoermigen siliziumkoerpern |
DE3310827A1 (de) * | 1983-03-24 | 1984-09-27 | Bayer Ag, 5090 Leverkusen | Verfahren zur herstellung von grobkristallinem silicium |
DE3466901D1 (en) * | 1983-03-30 | 1987-11-26 | Hoxan Kk | Method of fabricating polycrystalline silicon wafer and fabrication tray used therefor |
DE3427465A1 (de) * | 1984-07-25 | 1986-01-30 | Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen | Verfahren und vorrichtung zur taktweisen herstellung von siliciumformkoerpern |
JPS6193614A (ja) * | 1984-10-15 | 1986-05-12 | Nec Corp | 半導体単結晶基板 |
US5116456A (en) * | 1988-04-18 | 1992-05-26 | Solon Technologies, Inc. | Apparatus and method for growth of large single crystals in plate/slab form |
DE4018967A1 (de) * | 1990-06-13 | 1991-12-19 | Wacker Chemitronic | Verfahren und vorrichtung zum giessen von siliciumbloecken mit kolumnarstruktur als grundmaterial fuer solarzellen |
EP0700454B1 (de) * | 1993-05-25 | 1998-07-22 | Siemens Medical Systems, Inc. | Verfahren zur herstellung grossflächiger kristalliner salzkörper und dazu geeignete vorrichtung |
JP3596828B2 (ja) * | 1995-07-17 | 2004-12-02 | キヤノン株式会社 | 基体の製造方法 |
DE19723067C1 (de) * | 1997-06-02 | 1998-12-24 | Siemens Ag | Verfahren zum einfachen Herstellen großer Kristallkörper |
US6313398B1 (en) * | 1999-06-24 | 2001-11-06 | Shin-Etsu Chemical Co., Ltd. | Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same |
DE19934940C2 (de) * | 1999-07-26 | 2001-12-13 | Ald Vacuum Techn Ag | Vorrichtung zum Herstellen von gerichtet erstarrten Blöcken und Betriebsverfahren hierfür |
US8021483B2 (en) * | 2002-02-20 | 2011-09-20 | Hemlock Semiconductor Corporation | Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods |
FR2853913B1 (fr) † | 2003-04-17 | 2006-09-29 | Apollon Solar | Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication |
US7691199B2 (en) * | 2004-06-18 | 2010-04-06 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
US7465351B2 (en) * | 2004-06-18 | 2008-12-16 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
US7344594B2 (en) * | 2004-06-18 | 2008-03-18 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
WO2007084934A2 (en) | 2006-01-20 | 2007-07-26 | Bp Corporation North America Inc. | Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics |
DE102006055055A1 (de) * | 2006-11-22 | 2008-05-29 | Eos Gmbh Electro Optical Systems | Vorrichtung zum schichtweisen Herstellen eines dreidimensionalen Objekts |
JP5309539B2 (ja) * | 2007-07-12 | 2013-10-09 | 住友化学株式会社 | 精製シリコンの製造方法 |
WO2009014957A2 (en) * | 2007-07-20 | 2009-01-29 | Bp Corporation North America Inc. | Methods for manufacturing cast silicon from seed crystals |
JP5380442B2 (ja) * | 2007-07-20 | 2014-01-08 | エイエムジー・アイデアルキャスト・ソーラー・コーポレーション | 種結晶から鋳造シリコンを製造するための方法および装置 |
WO2009015167A1 (en) | 2007-07-25 | 2009-01-29 | Bp Corporation North America Inc. | Methods for manufacturing monocrystalline or near-monocrystalline cast materials |
WO2009015168A1 (en) | 2007-07-25 | 2009-01-29 | Bp Corporation North America Inc. | Methods for manufacturing geometric multi-crystalline cast materials |
JP5125973B2 (ja) * | 2007-10-17 | 2013-01-23 | 住友化学株式会社 | 精製シリコンの製造方法 |
TW201012978A (en) * | 2008-08-27 | 2010-04-01 | Bp Corp North America Inc | Apparatus and method of use for a casting system with independent melting and solidification |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DD73033A (nl) * | ||||
US1251951A (en) * | 1917-06-18 | 1918-01-01 | W G Armstrong Whitworth And Company Ltd | Casting steel ingots. |
US2402839A (en) * | 1941-03-27 | 1946-06-25 | Bell Telephone Labor Inc | Electrical translating device utilizing silicon |
NL63276C (nl) * | 1941-04-04 | |||
GB592303A (en) * | 1941-05-27 | 1947-09-15 | Western Electric Co | Light sensitive device |
BE562066A (nl) * | 1956-10-31 | |||
LU31951A1 (nl) * | 1956-12-24 | |||
NL112552C (nl) * | 1957-04-15 | 1900-01-01 | ||
US3012865A (en) * | 1957-11-25 | 1961-12-12 | Du Pont | Silicon purification process |
US3494709A (en) * | 1965-05-27 | 1970-02-10 | United Aircraft Corp | Single crystal metallic part |
US3567526A (en) * | 1968-05-01 | 1971-03-02 | United Aircraft Corp | Limitation of carbon in single crystal or columnar-grained nickel base superalloys |
US3763926A (en) * | 1971-09-15 | 1973-10-09 | United Aircraft Corp | Apparatus for casting of directionally solidified articles |
US3900943A (en) * | 1973-06-07 | 1975-08-26 | Dow Corning | Silicon semiconductor device array and method of making same |
-
1975
- 1975-02-28 DE DE2508803A patent/DE2508803C3/de not_active Expired
- 1975-08-04 IL IL47862A patent/IL47862A/xx unknown
- 1975-08-06 HU HU75WA00000316A patent/HU172435B/hu unknown
- 1975-08-12 DD DD187809A patent/DD122478A5/xx unknown
- 1975-10-27 NL NLAANVRAGE7512544,A patent/NL177612C/nl not_active IP Right Cessation
- 1975-10-30 DK DK488675A patent/DK145828C/da not_active IP Right Cessation
- 1975-11-17 CS CS757744A patent/CS199607B2/cs unknown
- 1975-11-17 YU YU02916/75A patent/YU291675A/xx unknown
- 1975-11-22 IN IN2231/CAL/1975A patent/IN143325B/en unknown
- 1975-12-08 SU SU752196602A patent/SU695531A3/ru active
- 1975-12-09 RO RO7584140A patent/RO72156A/ro unknown
- 1975-12-17 ZA ZA757846A patent/ZA757846B/xx unknown
- 1975-12-18 AU AU87664/75A patent/AU499586B2/en not_active Expired
-
1976
- 1976-01-26 US US05/652,359 patent/US4382838A/en not_active Expired - Lifetime
- 1976-01-28 JP JP829876A patent/JPS5330988B2/ja not_active Expired
- 1976-02-10 CA CA245,345A patent/CA1061688A/en not_active Expired
- 1976-02-26 IT IT48294/76A patent/IT1053650B/it active
- 1976-02-26 SE SE7602574A patent/SE408760B/xx not_active IP Right Cessation
- 1976-02-26 PL PL1976187531A patent/PL98068B1/pl unknown
- 1976-02-27 CH CH247176A patent/CH604884A5/xx not_active IP Right Cessation
- 1976-02-27 GB GB7772/76A patent/GB1539244A/en not_active Expired
- 1976-02-27 ES ES445617A patent/ES445617A1/es not_active Expired
- 1976-02-27 BE BE164701A patent/BE839008A/xx not_active IP Right Cessation
- 1976-02-27 FR FR7605549A patent/FR2302132A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2302132A1 (fr) | 1976-09-24 |
CH604884A5 (nl) | 1978-09-15 |
DD122478A5 (nl) | 1976-10-12 |
IL47862A0 (en) | 1975-11-25 |
ES445617A1 (es) | 1977-10-01 |
JPS5330988B2 (nl) | 1978-08-30 |
AU8766475A (en) | 1977-06-23 |
DK488675A (da) | 1976-08-29 |
YU291675A (en) | 1982-05-31 |
BE839008A (fr) | 1976-08-27 |
DE2508803A1 (de) | 1976-09-09 |
SE408760B (sv) | 1979-07-09 |
SU695531A3 (ru) | 1979-10-30 |
CS199607B2 (en) | 1980-07-31 |
JPS51101466A (nl) | 1976-09-07 |
ZA757846B (en) | 1976-11-24 |
IL47862A (en) | 1978-07-31 |
DE2508803C3 (de) | 1982-07-08 |
FR2302132B1 (nl) | 1980-08-14 |
NL177612B (nl) | 1985-05-17 |
NL177612C (nl) | 1985-10-16 |
GB1539244A (en) | 1979-01-31 |
DE2508803B2 (de) | 1978-03-09 |
IT1053650B (it) | 1981-10-10 |
PL98068B1 (pl) | 1978-04-29 |
DK145828C (da) | 1983-08-29 |
HU172435B (hu) | 1978-08-28 |
US4382838A (en) | 1983-05-10 |
IN143325B (nl) | 1977-11-05 |
AU499586B2 (en) | 1979-04-26 |
DK145828B (da) | 1983-03-14 |
CA1061688A (en) | 1979-09-04 |
SE7602574L (sv) | 1976-08-30 |
RO72156A (ro) | 1981-03-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
V1 | Lapsed because of non-payment of the annual fee |