NL7011512A - - Google Patents

Info

Publication number: NL7011512A
Authority: NL; Netherlands

Application number

NL7011512A

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1969-08-06

Filing date

1970-08-04

Publication date

1971-02-09

1970-08-04 Application filed filed Critical

1971-02-09 Publication of NL7011512A publication Critical patent/NL7011512A/xx

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
- C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/056—Gallium arsenide
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Organic Chemistry (AREA)
Crystallography & Structural Chemistry (AREA)
Metallurgy (AREA)
Materials Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Manufacturing & Machinery (AREA)
Physics & Mathematics (AREA)
Inorganic Chemistry (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

NL7011512A 1969-08-06 1970-08-04 NL7011512A (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US84801969A	1969-08-06	1969-08-06

Publications (1)

Publication Number	Publication Date
NL7011512A true NL7011512A (fr)	1971-02-09

Family

ID=25302125

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL7011512A NL7011512A (fr)	1969-08-06	1970-08-04

Country Status (7)

Country	Link
US (1)	US3631836A (fr)
JP (1)	JPS4840806B1 (fr)
BE (1)	BE754519A (fr)
DE (1)	DE2039172C3 (fr)
FR (1)	FR2057009B1 (fr)
GB (1)	GB1277315A (fr)
NL (1)	NL7011512A (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3791887A (en) *	1971-06-28	1974-02-12	Gte Laboratories Inc	Liquid-phase epitaxial growth under transient thermal conditions
US3765959A (en) *	1971-07-30	1973-10-16	Tokyo Shibaura Electric Co	Method for the liquid phase epitaxial growth of semiconductor crystals
BE788374A (fr) *	1971-12-08	1973-01-02	Rca Corp	Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat
US3933538A (en) *	1972-01-18	1976-01-20	Sumitomo Electric Industries, Ltd.	Method and apparatus for production of liquid phase epitaxial layers of semiconductors
BE795005A (fr) *	1972-02-09	1973-05-29	Rca Corp	Procede et appareil de croissance epitaxiale d'une matiere semi-conductrice a partir de la phase liquide et produit ainsi obtenu
US3767481A (en) *	1972-04-07	1973-10-23	Rca Corp	Method for epitaxially growing layers of a semiconductor material from the liquid phase
NL7209744A (fr) *	1972-07-14	1974-01-16
JPS4945683A (fr) *	1972-09-01	1974-05-01
JPS5314341B2 (fr) *	1972-09-18	1978-05-17
AT341579B (de) *	1972-09-28	1978-02-10	Siemens Ag	Flussigphasen-epitaxieverfahren
JPS5213510B2 (fr) *	1973-02-26	1977-04-14
JPS5329429B2 (fr) *	1973-03-20	1978-08-21
JPS5332525Y2 (fr) *	1973-04-20	1978-08-11
US3853643A (en) *	1973-06-18	1974-12-10	Bell Telephone Labor Inc	Epitaxial growth of group iii-v semiconductors from solution
JPS5420944Y2 (fr) *	1973-11-09	1979-07-26
US4264385A (en) *	1974-10-16	1981-04-28	Colin Fisher	Growing of crystals
US4091257A (en) *	1975-02-24	1978-05-23	General Electric Company	Deep diode devices and method and apparatus
JPS51111476A (en) *	1975-03-26	1976-10-01	Sumitomo Electric Ind Ltd	Method of liquid phase epitaxial crystal growth
US4110133A (en) *	1976-04-29	1978-08-29	The Post Office	Growth of semiconductor compounds by liquid phase epitaxy
JPS6034253B2 (ja) *	1976-05-21	1985-08-07	新技術開発事業団	液相エピタキシヤル成長方法
US4178195A (en) *	1976-11-22	1979-12-11	International Business Machines Corporation	Semiconductor structure
JPS53148388A (en) *	1977-05-31	1978-12-23	Kokusai Denshin Denwa Co Ltd	Method of producing compound semiconductor crystal
DE2847091C3 (de) *	1978-10-28	1982-03-25	Siemens AG, 1000 Berlin und 8000 München	Verfahren und Vorrichtung zur Herstellung von Ga↓1↓-↓x↓Al↓x↓ AS:Si-Epitaxieschichten
FR2470810A1 (fr) *	1979-12-07	1981-06-12	Labo Electronique Physique	Procede de fabrication de structures semi-conductrices par croissance epitaxiale en phase liquide et structures obtenues
JPS6028799B2 (ja) *	1982-04-28	1985-07-06	富士通株式会社	液相エピタキシヤル成長方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2243674A (en) *	1939-07-27	1941-05-27	Fred W Hoch	Method and means for testing ink requirements
US3289241A (en) *	1964-09-24	1966-12-06	Exxon Research Engineering Co	Device for applying coating materials in strips

0
- BE BE754519D patent/BE754519A/fr unknown
1969
- 1969-08-06 US US848019A patent/US3631836A/en not_active Expired - Lifetime
1970
- 1970-06-15 GB GB28815/70A patent/GB1277315A/en not_active Expired
- 1970-08-04 FR FR7028775A patent/FR2057009B1/fr not_active Expired
- 1970-08-04 NL NL7011512A patent/NL7011512A/xx unknown
- 1970-08-05 JP JP45068074A patent/JPS4840806B1/ja active Pending
- 1970-08-06 DE DE2039172A patent/DE2039172C3/de not_active Expired

Also Published As

Publication number	Publication date
DE2039172B2 (de)	1972-12-28
FR2057009A1 (fr)	1971-05-07
DE2039172C3 (de)	1975-04-24
JPS4840806B1 (fr)	1973-12-03
BE754519A (fr)	1971-02-08
US3631836A (en)	1972-01-04
DE2039172A1 (de)	1971-02-18
GB1277315A (en)	1972-06-14
FR2057009B1 (fr)	1975-03-21

Publication	Publication Date	Title
FR2057009B1 (fr)	1975-03-21
AU465452B2 (fr)	1975-09-11
AU429630B2 (fr)	1972-10-26
AU450150B2 (fr)	1970-11-12
AU442375B2 (fr)	1973-11-06
AU470301B1 (fr)	1972-05-25
AU5113869A (fr)	1971-04-29
AU442538B2 (fr)	1973-11-12
AU442380B2 (fr)	1973-11-05
AU442463B2 (fr)	1973-11-09
AU442535B2 (fr)	1973-11-12
AU442322B2 (fr)	1973-11-02
AU442554B2 (fr)	1973-11-13
AU470661B1 (fr)	1970-10-05
AU442285B2 (fr)	1973-11-02
AU438128B2 (fr)	1973-07-16
AU428131B2 (fr)	1972-09-14
AU442357B2 (fr)	1973-11-07
AU4540468A (fr)	1971-04-01
AU4949169A (fr)	1970-07-30
CS152491B2 (fr)	1973-12-19
CS148847B1 (fr)	1973-05-24
CS148794B1 (fr)	1973-05-24
AU5228269A (fr)	1970-09-24
AU5109569A (fr)	1970-08-27