NL6904744A - - Google Patents
Info
- Publication number
- NL6904744A NL6904744A NL6904744A NL6904744A NL6904744A NL 6904744 A NL6904744 A NL 6904744A NL 6904744 A NL6904744 A NL 6904744A NL 6904744 A NL6904744 A NL 6904744A NL 6904744 A NL6904744 A NL 6904744A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Weting (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71682868A | 1968-03-28 | 1968-03-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6904744A true NL6904744A (es) | 1969-09-30 |
Family
ID=24879613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6904744A NL6904744A (es) | 1968-03-28 | 1969-03-27 |
Country Status (5)
| Country | Link |
|---|---|
| DE (1) | DE1916036A1 (es) |
| ES (1) | ES365276A1 (es) |
| FR (1) | FR1600285A (es) |
| GB (1) | GB1211657A (es) |
| NL (1) | NL6904744A (es) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115360496A (zh) * | 2022-08-30 | 2022-11-18 | 合肥工业大学 | 基于金属辅助化学刻蚀的太赫兹高度差腔体器件的制备方法 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3700569A (en) * | 1971-09-10 | 1972-10-24 | Bell Telephone Labor Inc | Method of metallizing devices |
| US3920471A (en) * | 1974-10-10 | 1975-11-18 | Teletype Corp | Prevention of aluminum etching during silox photoshaping |
| DE102009021272A1 (de) * | 2009-05-14 | 2010-11-18 | Schott Solar Ag | Verfahren zur Herstellung eines photovoltaischen Moduls |
| CN113502407B (zh) * | 2021-07-13 | 2022-04-26 | 湖南金天铝业高科技股份有限公司 | 碳化硅颗粒的预处理方法及铝基复合材料的制备方法 |
-
1968
- 1968-12-31 FR FR1600285D patent/FR1600285A/fr not_active Expired
-
1969
- 1969-03-10 GB GB02470/69A patent/GB1211657A/en not_active Expired
- 1969-03-26 ES ES365276A patent/ES365276A1/es not_active Expired
- 1969-03-27 NL NL6904744A patent/NL6904744A/xx unknown
- 1969-03-28 DE DE19691916036 patent/DE1916036A1/de active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115360496A (zh) * | 2022-08-30 | 2022-11-18 | 合肥工业大学 | 基于金属辅助化学刻蚀的太赫兹高度差腔体器件的制备方法 |
| CN115360496B (zh) * | 2022-08-30 | 2023-09-29 | 合肥工业大学 | 基于金属辅助化学刻蚀的太赫兹高度差腔体器件的制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| ES365276A1 (es) | 1971-02-16 |
| FR1600285A (es) | 1970-07-20 |
| DE1916036A1 (de) | 1969-10-02 |
| GB1211657A (en) | 1970-11-11 |