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NL6703014A - - Google Patents

Info

Publication number
NL6703014A
NL6703014A NL6703014A NL6703014A NL6703014A NL 6703014 A NL6703014 A NL 6703014A NL 6703014 A NL6703014 A NL 6703014A NL 6703014 A NL6703014 A NL 6703014A NL 6703014 A NL6703014 A NL 6703014A
Authority
NL
Netherlands
Application number
NL6703014A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL6703014A priority Critical patent/NL6703014A/xx
Priority to NL676703013A priority patent/NL153947B/xx
Priority to US707031A priority patent/US3536600A/en
Priority to SE2316/68A priority patent/SE345552B/xx
Priority to GB1226153D priority patent/GB1226153A/en
Priority to CH257568A priority patent/CH513514A/de
Priority to GB8639/68A priority patent/GB1225061A/en
Priority to CH257668A priority patent/CH517380A/de
Priority to DE19681696084 priority patent/DE1696084C/de
Priority to DE1696092A priority patent/DE1696092C2/de
Priority to AT173068A priority patent/AT300038B/de
Priority to BE711250D priority patent/BE711250A/xx
Priority to US708306A priority patent/US3616345A/en
Priority to FR1562282D priority patent/FR1562282A/fr
Priority to FR1556569D priority patent/FR1556569A/fr
Publication of NL6703014A publication Critical patent/NL6703014A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/924—To facilitate selective etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
NL6703014A 1967-02-25 1967-02-25 NL6703014A (fr)

Priority Applications (15)

Application Number Priority Date Filing Date Title
NL6703014A NL6703014A (fr) 1967-02-25 1967-02-25
NL676703013A NL153947B (nl) 1967-02-25 1967-02-25 Werkwijze voor het vervaardigen van halfgeleiderinrichtingen, waarbij een selectief elektrolytisch etsproces wordt toegepast en halfgeleiderinrichting verkregen met toepassing van de werkwijze.
US707031A US3536600A (en) 1967-02-25 1968-02-21 Method of manufacturing semiconductor devices using an electrolytic etching process and semiconductor device manufactured by this method
SE2316/68A SE345552B (fr) 1967-02-25 1968-02-22
GB1226153D GB1226153A (fr) 1967-02-25 1968-02-22
CH257568A CH513514A (de) 1967-02-25 1968-02-22 Verfahren zur Herstellung einer Halbleitervorrichtung
GB8639/68A GB1225061A (en) 1967-02-25 1968-02-22 Manufacturing semiconductor devices
CH257668A CH517380A (de) 1967-02-25 1968-02-22 Verfahren zur Herstellung einer Halbleitervorrichtung, bei dem ein elektrolytischer Ätzvorgang angewendet wird, und nach diesem Verfahren hergestellte Halbleitervorrichtung
DE19681696084 DE1696084C (de) 1967-02-25 1968-02-23 Verfahren zur Herstellung von Halbleitervorrichtungen mit Hilfe selektiver elektrolytischer Ätzung
DE1696092A DE1696092C2 (de) 1967-02-25 1968-02-23 Verfahren zum Herstellen von Halbleiterbauelementen
AT173068A AT300038B (de) 1967-02-25 1968-02-23 Verfahren zur Herstellung von Halbleitervorrichtungen unter Anwendung eines selektiven elektrolytischen Ätzverfahrens
BE711250D BE711250A (fr) 1967-02-25 1968-02-23
US708306A US3616345A (en) 1967-02-25 1968-02-26 Method of manufacturing semiconductor devices in which a selective electrolytic etching process is used
FR1562282D FR1562282A (fr) 1967-02-25 1968-02-26
FR1556569D FR1556569A (fr) 1967-02-25 1968-02-26

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL6703014A NL6703014A (fr) 1967-02-25 1967-02-25
NL676703013A NL153947B (nl) 1967-02-25 1967-02-25 Werkwijze voor het vervaardigen van halfgeleiderinrichtingen, waarbij een selectief elektrolytisch etsproces wordt toegepast en halfgeleiderinrichting verkregen met toepassing van de werkwijze.

Publications (1)

Publication Number Publication Date
NL6703014A true NL6703014A (fr) 1968-08-26

Family

ID=26644158

Family Applications (2)

Application Number Title Priority Date Filing Date
NL676703013A NL153947B (nl) 1967-02-25 1967-02-25 Werkwijze voor het vervaardigen van halfgeleiderinrichtingen, waarbij een selectief elektrolytisch etsproces wordt toegepast en halfgeleiderinrichting verkregen met toepassing van de werkwijze.
NL6703014A NL6703014A (fr) 1967-02-25 1967-02-25

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL676703013A NL153947B (nl) 1967-02-25 1967-02-25 Werkwijze voor het vervaardigen van halfgeleiderinrichtingen, waarbij een selectief elektrolytisch etsproces wordt toegepast en halfgeleiderinrichting verkregen met toepassing van de werkwijze.

Country Status (8)

Country Link
US (2) US3536600A (fr)
AT (1) AT300038B (fr)
BE (1) BE711250A (fr)
CH (2) CH513514A (fr)
DE (1) DE1696092C2 (fr)
FR (2) FR1556569A (fr)
GB (2) GB1226153A (fr)
NL (2) NL153947B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3713922A (en) * 1970-12-28 1973-01-30 Bell Telephone Labor Inc High resolution shadow masks and their preparation

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL162254B (nl) * 1968-11-29 1979-11-15 Philips Nv Halfgeleiderinrichting voor het omzetten van mechanische spanningen in elektrische signalen en werkwijze voor het vervaardigen daarvan.
NL6910274A (fr) * 1969-07-04 1971-01-06
US4131524A (en) * 1969-11-24 1978-12-26 U.S. Philips Corporation Manufacture of semiconductor devices
DE2013546A1 (de) * 1970-03-20 1971-09-30 Siemens Ag Verfahren zur Herstellung isolierter Halbleiterbereiche
US3655540A (en) * 1970-06-22 1972-04-11 Bell Telephone Labor Inc Method of making semiconductor device components
US3642593A (en) * 1970-07-31 1972-02-15 Bell Telephone Labor Inc Method of preparing slices of a semiconductor material having discrete doped regions
US3661741A (en) * 1970-10-07 1972-05-09 Bell Telephone Labor Inc Fabrication of integrated semiconductor devices by electrochemical etching
JPS4936792B1 (fr) * 1970-10-15 1974-10-03
US3902979A (en) * 1974-06-24 1975-09-02 Westinghouse Electric Corp Insulator substrate with a thin mono-crystalline semiconductive layer and method of fabrication
US4070230A (en) * 1974-07-04 1978-01-24 Siemens Aktiengesellschaft Semiconductor component with dielectric carrier and its manufacture
GB1485015A (en) * 1974-10-29 1977-09-08 Mullard Ltd Semi-conductor device manufacture
US3997381A (en) * 1975-01-10 1976-12-14 Intel Corporation Method of manufacture of an epitaxial semiconductor layer on an insulating substrate
US3936329A (en) * 1975-02-03 1976-02-03 Texas Instruments Incorporated Integral honeycomb-like support of very thin single crystal slices
US4115223A (en) * 1975-12-15 1978-09-19 International Standard Electric Corporation Gallium arsenide photocathodes
US4180439A (en) * 1976-03-15 1979-12-25 International Business Machines Corporation Anodic etching method for the detection of electrically active defects in silicon
GB1552268A (en) * 1977-04-01 1979-09-12 Standard Telephones Cables Ltd Semiconductor etching
JPS6047725B2 (ja) * 1977-06-14 1985-10-23 ソニー株式会社 フエライトの加工法
DE2917654A1 (de) * 1979-05-02 1980-11-13 Ibm Deutschland Anordnung und verfahren zum selektiven, elektrochemischen aetzen
IT1212404B (it) * 1979-02-22 1989-11-22 Rca Corp Metodo comportante un singolo attacco per la formazione di un mesa presentante una parete a piu'gradini.
DE3068851D1 (en) * 1979-05-02 1984-09-13 Ibm Apparatus and process for selective electrochemical etching
US5362682A (en) * 1980-04-10 1994-11-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
DE3486223T2 (de) * 1983-11-04 1994-03-31 Harris Corp Elektrochemische Technik für die Herstellung einer dielektrischen Isolationsstruktur.
US4554059A (en) * 1983-11-04 1985-11-19 Harris Corporation Electrochemical dielectric isolation technique
FR2675824B1 (fr) * 1991-04-26 1994-02-04 Alice Izrael Procede de traitement de la surface gravee d'un corps semi conducteur ou semi-isolant, circuits integres obtenus selon un tel procede et appareil d'oxydation anodique pour mettre en óoeuvre un tel procede.
EP0563625A3 (en) * 1992-04-03 1994-05-25 Ibm Immersion scanning system for fabricating porous silicon films and devices
WO1996003772A2 (fr) * 1994-07-26 1996-02-08 Philips Electronics N.V. Procede de fabrication d'un dispositif a semi-conducteurs pour montage en surface, et dispositif a semi-conducteurs pour montage en surface
US6027958A (en) * 1996-07-11 2000-02-22 Kopin Corporation Transferred flexible integrated circuit
US6737360B2 (en) * 1999-12-30 2004-05-18 Intel Corporation Controlled potential anodic etching process for the selective removal of conductive thin films
US6709953B2 (en) * 2002-01-31 2004-03-23 Infineon Technologies Ag Method of applying a bottom surface protective coating to a wafer, and wafer dicing method
DE10235020B4 (de) * 2002-07-31 2004-08-26 Christian-Albrechts-Universität Zu Kiel Vorrichtung und Verfahren zum Ätzen großflächiger Halbleiterscheiben
CN102061474B (zh) * 2010-10-01 2012-06-27 绍兴旭昌科技企业有限公司 一种半导体晶圆的超厚度化学减薄方法
CN112442728B (zh) * 2020-12-02 2024-05-24 无锡市鹏振智能科技有限公司 一种旋转式电解抛光设备

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2939825A (en) * 1956-04-09 1960-06-07 Cleveland Twist Drill Co Sharpening, shaping and finishing of electrically conductive materials
FR1210880A (fr) * 1958-08-29 1960-03-11 Perfectionnements aux transistors à effet de champ
US3096262A (en) * 1958-10-23 1963-07-02 Shockley William Method of making thin slices of semiconductive material
USB161573I5 (fr) * 1961-12-22
DE1213056B (de) * 1962-08-16 1966-03-24 Siemens Ag Elektrolytisches AEtzverfahren zum Verkleinern von pn-UEbergangsflaechen und/oder zum Beseitigen von Oberflaechenstoerungen an pn-UEbergaengen bei Halbleiterkoerpern von Halbleiterbauelementen
US3254280A (en) * 1963-05-29 1966-05-31 Westinghouse Electric Corp Silicon carbide unipolar transistor
US3265599A (en) * 1963-06-25 1966-08-09 Litton Systems Inc Formation of grain boundary photoorienter by electrolytic etching

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3713922A (en) * 1970-12-28 1973-01-30 Bell Telephone Labor Inc High resolution shadow masks and their preparation

Also Published As

Publication number Publication date
FR1556569A (fr) 1969-02-07
AT300038B (de) 1972-07-10
FR1562282A (fr) 1969-04-04
CH513514A (de) 1971-09-30
CH517380A (de) 1971-12-31
BE711250A (fr) 1968-08-23
US3536600A (en) 1970-10-27
GB1225061A (en) 1971-03-17
NL153947B (nl) 1977-07-15
NL6703013A (fr) 1968-08-26
DE1696092A1 (de) 1971-12-23
DE1696092C2 (de) 1984-04-26
DE1696084B2 (de) 1972-12-28
DE1696084A1 (de) 1972-03-09
GB1226153A (fr) 1971-03-24
US3616345A (en) 1971-10-26

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