NL6609806A - - Google Patents
Info
- Publication number
- NL6609806A NL6609806A NL6609806A NL6609806A NL6609806A NL 6609806 A NL6609806 A NL 6609806A NL 6609806 A NL6609806 A NL 6609806A NL 6609806 A NL6609806 A NL 6609806A NL 6609806 A NL6609806 A NL 6609806A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/012—Modifications of generator to improve response time or to decrease power consumption
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/415—Address circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/416—Read-write [R-W] circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR24412A FR1453354A (fr) | 1965-07-13 | 1965-07-13 | Mémoire rapide à basculateurs |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6609806A true NL6609806A (xx) | 1967-01-16 |
Family
ID=8584355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6609806A NL6609806A (xx) | 1965-07-13 | 1966-07-13 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3503051A (xx) |
| CH (1) | CH443407A (xx) |
| FR (1) | FR1453354A (xx) |
| NL (1) | NL6609806A (xx) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3675218A (en) * | 1970-01-15 | 1972-07-04 | Ibm | Independent read-write monolithic memory array |
| US4287575A (en) * | 1979-12-28 | 1981-09-01 | International Business Machines Corporation | High speed high density, multi-port random access memory cell |
| US4393473A (en) * | 1981-07-13 | 1983-07-12 | Fairchild Camera & Instrument Corp. | Random access memory preset circuitry |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3177374A (en) * | 1961-03-10 | 1965-04-06 | Philco Corp | Binary data transfer circuit |
| NL298196A (xx) * | 1962-09-22 | |||
| US3259757A (en) * | 1963-05-20 | 1966-07-05 | Bendix Corp | High speed active triggering circuit for use with a binary |
| US3364362A (en) * | 1963-10-07 | 1968-01-16 | Bunker Ramo | Memory selection system |
| US3292014A (en) * | 1965-01-11 | 1966-12-13 | Hewlett Packard Co | Logic circuit having inductive elements to improve switching speed |
-
1965
- 1965-07-13 FR FR24412A patent/FR1453354A/fr not_active Expired
-
1966
- 1966-07-12 US US564687A patent/US3503051A/en not_active Expired - Lifetime
- 1966-07-13 CH CH1018866A patent/CH443407A/fr unknown
- 1966-07-13 NL NL6609806A patent/NL6609806A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR1453354A (fr) | 1966-06-03 |
| CH443407A (fr) | 1967-09-15 |
| US3503051A (en) | 1970-03-24 |