NL290680A - - Google Patents
Info
- Publication number
- NL290680A NL290680A NL290680DA NL290680A NL 290680 A NL290680 A NL 290680A NL 290680D A NL290680D A NL 290680DA NL 290680 A NL290680 A NL 290680A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES79974A DE1209660B (de) | 1962-06-19 | 1962-06-19 | Steuerbares Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper und vier Zonen abwechselnd entgegengesetzten Leitfaehigkeitstyps |
Publications (1)
Publication Number | Publication Date |
---|---|
NL290680A true NL290680A (de) |
Family
ID=7508574
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL290680D NL290680A (de) | 1962-06-19 |
Country Status (7)
Country | Link |
---|---|
US (1) | US3392313A (de) |
CH (1) | CH396229A (de) |
DE (1) | DE1209660B (de) |
FR (1) | FR1415513A (de) |
GB (1) | GB1037804A (de) |
NL (1) | NL290680A (de) |
SE (1) | SE301192B (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3832709A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Thyristor |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2959681A (en) * | 1959-06-18 | 1960-11-08 | Fairchild Semiconductor | Semiconductor scanning device |
NL264084A (de) * | 1959-06-23 | |||
DE1103389B (de) * | 1959-10-14 | 1961-03-30 | Siemens Ag | Schaltanordnung mit einer Vierschichthalbleiteranordnung |
US3175934A (en) * | 1960-01-19 | 1965-03-30 | Hitachi Ltd | Semiconductor switching element and process for producing the same |
DE1133038B (de) * | 1960-05-10 | 1962-07-12 | Siemens Ag | Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps |
NL265766A (de) * | 1960-06-10 | |||
NL268728A (de) * | 1960-06-10 | |||
BE623187A (de) * | 1961-10-06 |
-
0
- NL NL290680D patent/NL290680A/xx unknown
-
1962
- 1962-06-19 DE DES79974A patent/DE1209660B/de active Granted
-
1963
- 1963-02-06 CH CH147963A patent/CH396229A/de unknown
- 1963-06-17 FR FR938371A patent/FR1415513A/fr not_active Expired
- 1963-06-18 GB GB24156/63A patent/GB1037804A/en not_active Expired
- 1963-06-19 SE SE6842/63A patent/SE301192B/xx unknown
-
1966
- 1966-12-12 US US601219A patent/US3392313A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE1209660B (de) | 1966-01-27 |
CH396229A (de) | 1965-07-31 |
GB1037804A (en) | 1966-08-03 |
US3392313A (en) | 1968-07-09 |
DE1209660C2 (de) | 1966-10-13 |
SE301192B (de) | 1968-05-27 |
FR1415513A (fr) | 1965-10-29 |