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NL283915A - - Google Patents

Info

Publication number
NL283915A
NL283915A NL283915DA NL283915A NL 283915 A NL283915 A NL 283915A NL 283915D A NL283915D A NL 283915DA NL 283915 A NL283915 A NL 283915A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL283915A publication Critical patent/NL283915A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H10F30/2925—Li-compensated PIN gamma-ray detectors

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
NL283915D 1961-10-04 NL283915A (el)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB35776/61A GB1038041A (en) 1961-10-04 1961-10-04 Improvements relating to solid state radiation detectors

Publications (1)

Publication Number Publication Date
NL283915A true NL283915A (el)

Family

ID=10381438

Family Applications (1)

Application Number Title Priority Date Filing Date
NL283915D NL283915A (el) 1961-10-04

Country Status (5)

Country Link
US (1) US3212943A (el)
CH (1) CH407334A (el)
FR (1) FR1335445A (el)
GB (1) GB1038041A (el)
NL (1) NL283915A (el)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1054331A (el) * 1963-05-16
US3304594A (en) * 1963-08-15 1967-02-21 Motorola Inc Method of making integrated circuit by controlled process
NL6407230A (el) * 1963-09-28 1965-03-29
US3310442A (en) * 1964-10-16 1967-03-21 Siemens Ag Method of producing semiconductors by diffusion
US3329538A (en) * 1964-11-27 1967-07-04 Ca Atomic Energy Ltd Method for the production of semiconductor lithium-ion drift diodes
US3410737A (en) * 1965-05-03 1968-11-12 Oak Ridge Technical Entpr Corp Method for producing semiconductor nuclear particle detectors by diffusing
US3390449A (en) * 1966-07-18 1968-07-02 Atomic Energy Commission Usa Method for preparation and encapsulation of germanium gamma ray detectors
US3396318A (en) * 1966-09-16 1968-08-06 Electro Nuclear Lab Inc Charged particle detector with lithium compensated intrinsic silicon as an intermediate region
US3461005A (en) * 1967-09-01 1969-08-12 Atomic Energy Commission P-contact for compensated p-germanium crystal

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2816847A (en) * 1953-11-18 1957-12-17 Bell Telephone Labor Inc Method of fabricating semiconductor signal translating devices
US3022568A (en) * 1957-03-27 1962-02-27 Rca Corp Semiconductor devices
US2991366A (en) * 1957-11-29 1961-07-04 Salzberg Bernard Semiconductor apparatus
US3016313A (en) * 1958-05-15 1962-01-09 Gen Electric Semiconductor devices and methods of making the same
US3044147A (en) * 1959-04-21 1962-07-17 Pacific Semiconductors Inc Semiconductor technology method of contacting a body
US3043955A (en) * 1960-01-25 1962-07-10 Hughes Aircraft Co Discriminating radiation detector

Also Published As

Publication number Publication date
GB1038041A (en) 1966-08-03
FR1335445A (fr) 1963-08-16
CH407334A (de) 1966-02-15
US3212943A (en) 1965-10-19

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