NL280641A - - Google Patents
Info
- Publication number
- NL280641A NL280641A NL280641DA NL280641A NL 280641 A NL280641 A NL 280641A NL 280641D A NL280641D A NL 280641DA NL 280641 A NL280641 A NL 280641A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/054—Flat sheets-substrates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Weting (AREA)
- Thyristors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB24660/61A GB968105A (en) | 1961-07-07 | 1961-07-07 | Improvements in or relating to semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
NL280641A true NL280641A (da) |
Family
ID=10215225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL280641D NL280641A (da) | 1961-07-07 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3179860A (da) |
DE (1) | DE1464622A1 (da) |
GB (1) | GB968105A (da) |
NL (1) | NL280641A (da) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3575644A (en) * | 1963-01-30 | 1971-04-20 | Gen Electric | Semiconductor device with double positive bevel |
GB1052661A (da) * | 1963-01-30 | 1900-01-01 | ||
CH427042A (de) * | 1963-09-25 | 1966-12-31 | Licentia Gmbh | Halbleiterbauelement mit einem Halbleiterkörper aus drei oder mehr Zonen abwechselnd entgegengesetzten Leitfähigkeitstyps |
US3262234A (en) * | 1963-10-04 | 1966-07-26 | Int Rectifier Corp | Method of forming a semiconductor rim by sandblasting |
US3320496A (en) * | 1963-11-26 | 1967-05-16 | Int Rectifier Corp | High voltage semiconductor device |
US3363151A (en) * | 1964-07-09 | 1968-01-09 | Transitron Electronic Corp | Means for forming planar junctions and devices |
US3413527A (en) * | 1964-10-02 | 1968-11-26 | Gen Electric | Conductive electrode for reducing the electric field in the region of the junction of a junction semiconductor device |
US3413532A (en) * | 1965-02-08 | 1968-11-26 | Westinghouse Electric Corp | Compression bonded semiconductor device |
DE1514474C3 (de) * | 1965-06-05 | 1981-04-30 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbauelement |
CH426020A (de) * | 1965-09-08 | 1966-12-15 | Bbc Brown Boveri & Cie | Verfahren zur Herstellung des Halbleiterelementes eines stossspannungsfesten Halbleiterventils, sowie ein mit Hilfe dieses Verfahrens hergestelltes Halbleiterelement |
CH437538A (de) * | 1965-12-22 | 1967-06-15 | Bbc Brown Boveri & Cie | Steuerbares Halbleiterelement |
GB1145392A (en) * | 1967-03-08 | 1969-03-12 | Ass Elect Ind | Improvements in semi-conductor rectifiers |
FR2061563A1 (da) * | 1969-07-08 | 1971-06-25 | Comp Generale Electricite | |
US3688163A (en) * | 1970-08-04 | 1972-08-29 | Gen Motors Corp | Cold welded semiconductor package having integral cold welding oil |
JPS5062385A (da) * | 1973-10-02 | 1975-05-28 | ||
DE2812700A1 (de) * | 1978-03-23 | 1979-12-06 | Bbc Brown Boveri & Cie | Halbleiteranordnung mit zwei halbleiterelementen |
US4170496A (en) * | 1978-12-07 | 1979-10-09 | General Electric Company | Beveled wafer for thermal gradient zone melting utilizing a beveled wafer edge |
US4168992A (en) * | 1978-12-07 | 1979-09-25 | General Electric Company | Process for thermal gradient zone melting utilizing a beveled wafer and a beveled guard ring |
US4170490A (en) * | 1978-12-07 | 1979-10-09 | General Electric Company | Process for thermal gradient zone melting utilizing a beveled wafer edge |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA509126A (en) * | 1949-05-28 | 1955-01-11 | Western Electric Company, Incorporated | Semiconductor translating devices |
DE1073632B (de) * | 1956-06-18 | 1960-01-21 | Radio Corporation Of America, New York, N. Y. (V. St. A.) | Drift-Transistor mit einer Zonenfolge P-N-P bzw. N-P-N und Verfahren zu seiner Herstellung |
NL113266C (da) * | 1957-01-18 | |||
US2929859A (en) * | 1957-03-12 | 1960-03-22 | Rca Corp | Semiconductor devices |
US2879190A (en) * | 1957-03-22 | 1959-03-24 | Bell Telephone Labor Inc | Fabrication of silicon devices |
US3001895A (en) * | 1957-06-06 | 1961-09-26 | Ibm | Semiconductor devices and method of making same |
US3007090A (en) * | 1957-09-04 | 1961-10-31 | Ibm | Back resistance control for junction semiconductor devices |
NL240714A (da) * | 1958-07-02 | |||
NL243218A (da) * | 1958-12-24 | |||
US3091706A (en) * | 1960-05-16 | 1963-05-28 | Raytheon Co | Semiconductor devices with improved carrier injection to allow increased frequency response |
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0
- NL NL280641D patent/NL280641A/xx unknown
-
1961
- 1961-07-07 GB GB24660/61A patent/GB968105A/en not_active Expired
-
1962
- 1962-07-06 US US207968A patent/US3179860A/en not_active Expired - Lifetime
- 1962-07-06 DE DE19621464622 patent/DE1464622A1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
GB968105A (en) | 1964-08-26 |
US3179860A (en) | 1965-04-20 |
DE1464622A1 (de) | 1968-11-07 |