NL233208A - - Google Patents
Info
- Publication number
- NL233208A NL233208A NL233208DA NL233208A NL 233208 A NL233208 A NL 233208A NL 233208D A NL233208D A NL 233208DA NL 233208 A NL233208 A NL 233208A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Conductive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB35471/57A GB847681A (en) | 1957-11-14 | 1957-11-14 | Improvements in or relating to semi-conductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL233208A true NL233208A (de) |
Family
ID=10378096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL233208D NL233208A (de) | 1957-11-14 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US2985807A (de) |
| BE (1) | BE572917A (de) |
| DE (1) | DE1127483B (de) |
| GB (1) | GB847681A (de) |
| NL (1) | NL233208A (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1208412B (de) * | 1959-11-13 | 1966-01-05 | Siemens Ag | Elektrisches Halbleiterbauelement mit mindestens einem an die Oberflaeche des Halbleiterkoerpers tretenden pn-UEbergang und Verfahren zum Herstellen eines solchen Bauelements |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1722795U (de) * | 1900-01-01 | |||
| US2583009A (en) * | 1948-09-16 | 1952-01-22 | Bell Telephone Labor Inc | Asymmetric electrical conducting device |
| DE906955C (de) * | 1952-03-28 | 1954-02-04 | Licentia Gmbh | Verfahren zur Erzeugung groesserer zusammenhaengender defektleitender Bereiche in den Aussenschichten von ueberschussleitenden Germaniumkristallen |
| US2767287A (en) * | 1952-12-31 | 1956-10-16 | Sprague Electric Co | Electrode for crystalline negative resistance elements |
| US2840770A (en) * | 1955-03-14 | 1958-06-24 | Texas Instruments Inc | Semiconductor device and method of manufacture |
| DE1765071U (de) * | 1957-07-23 | 1958-04-17 | Telefunken Gmbh | Zuleitung zu einer legierungsstelle einer kristallode des legierungstyps. |
-
0
- BE BE572917D patent/BE572917A/xx unknown
- NL NL233208D patent/NL233208A/xx unknown
-
1957
- 1957-11-14 GB GB35471/57A patent/GB847681A/en not_active Expired
-
1958
- 1958-11-06 US US772315A patent/US2985807A/en not_active Expired - Lifetime
- 1958-11-14 DE DEI15631A patent/DE1127483B/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB847681A (en) | 1960-09-14 |
| BE572917A (de) | |
| US2985807A (en) | 1961-05-23 |
| DE1127483B (de) | 1962-04-12 |