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NL202404A - - Google Patents

Info

Publication number
NL202404A
NL202404A NL202404DA NL202404A NL 202404 A NL202404 A NL 202404A NL 202404D A NL202404D A NL 202404DA NL 202404 A NL202404 A NL 202404A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL202404A publication Critical patent/NL202404A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/45Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of non-linear magnetic or dielectric devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/02Electrets, i.e. having a permanently-polarised dielectric
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/02Electrets, i.e. having a permanently-polarised dielectric
    • H01G7/021Electrets, i.e. having a permanently-polarised dielectric having an organic dielectric
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00X-ray tubes
    • H01J35/02Details
    • H01J35/04Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/701IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/66Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/223Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using MOS with ferroelectric gate insulating film

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
NL202404D 1955-02-18 NL202404A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US489223A US2791760A (en) 1955-02-18 1955-02-18 Semiconductive translating device
US489141A US2791758A (en) 1955-02-18 1955-02-18 Semiconductive translating device

Publications (1)

Publication Number Publication Date
NL202404A true NL202404A (fr)

Family

ID=27049612

Family Applications (2)

Application Number Title Priority Date Filing Date
NL202404D NL202404A (fr) 1955-02-18
NL97896D NL97896C (fr) 1955-02-18

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL97896D NL97896C (fr) 1955-02-18

Country Status (7)

Country Link
US (2) US2791760A (fr)
BE (1) BE545324A (fr)
CH (1) CH349643A (fr)
DE (1) DE1024119B (fr)
FR (1) FR1145450A (fr)
GB (1) GB810452A (fr)
NL (2) NL97896C (fr)

Families Citing this family (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1097568B (de) * 1955-05-27 1961-01-19 Globe Union Inc Verfahren zur Herstellung einer Halbleiteranordnung mit einem gleichmaessig gesinterten Koerper aus Erdalkalititanaten
US2898477A (en) * 1955-10-31 1959-08-04 Bell Telephone Labor Inc Piezoelectric field effect semiconductor device
US2922986A (en) * 1956-04-24 1960-01-26 Bell Telephone Labor Inc Ferroelectric memory device
DE1166381B (de) * 1956-07-06 1964-03-26 Siemens Ag Verstaerkendes Halbleiterbauelement mit einer isolierten Steuerelektrode ueber einemin Sperrichtung vorgespannten pn-UEbergang und Verfahren zu seinem Herstellen
US3126509A (en) * 1956-07-27 1964-03-24 Electrical condenser having two electrically
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor
BE552928A (fr) * 1957-03-18
NL218993A (fr) * 1957-07-15
DE1051412B (de) * 1957-09-12 1959-02-26 Siemens Ag Temperaturbeeinflussbare Halbleiteranordnung mit zwei pn-UEbergaengen
US3010033A (en) * 1958-01-02 1961-11-21 Clevite Corp Field effect transistor
NL237225A (fr) * 1958-03-19
US3040266A (en) * 1958-06-16 1962-06-19 Union Carbide Corp Surface field effect transistor amplifier
US3109163A (en) * 1958-12-08 1963-10-29 Gen Mills Inc Memory system and method utilizing a semiconductor containing a grain boundary
NL246032A (fr) * 1959-01-27
US3032706A (en) * 1959-03-18 1962-05-01 Herman H Wieder Four terminal ferroelectric crystals
US2994811A (en) * 1959-05-04 1961-08-01 Bell Telephone Labor Inc Electrostatic field-effect transistor having insulated electrode controlling field in depletion region of reverse-biased junction
NL250955A (fr) * 1959-08-05
US3154692A (en) * 1960-01-08 1964-10-27 Clevite Corp Voltage regulating semiconductor device
NL267831A (fr) * 1960-08-17
NL274072A (fr) * 1961-02-02
NL274830A (fr) * 1961-04-12
GB1007936A (en) * 1961-04-26 1965-10-22 Clevite Corp Improvements in or relating to semiconductive devices
US3152928A (en) * 1961-05-18 1964-10-13 Clevite Corp Semiconductor device and method
NL282170A (fr) * 1961-08-17
FR1336813A (fr) * 1962-07-25 1963-09-06 Csf Dispositif de mesure des contraintes à semi-conducteur
BE636317A (fr) * 1962-08-23 1900-01-01
NL301034A (fr) * 1962-11-27
NL301882A (fr) * 1962-12-17
US3472703A (en) * 1963-06-06 1969-10-14 Hitachi Ltd Method for producing semiconductor devices
US3360736A (en) * 1963-09-10 1967-12-26 Hitachi Ltd Two input field effect transistor amplifier
US3275911A (en) * 1963-11-06 1966-09-27 Motorola Inc Semiconductor current limiter
US3290569A (en) * 1964-02-14 1966-12-06 Rca Corp Tellurium thin film field effect solid state electrical devices
US3400383A (en) * 1964-08-05 1968-09-03 Texas Instruments Inc Trainable decision system and adaptive memory element
US3484309A (en) * 1964-11-09 1969-12-16 Solitron Devices Semiconductor device with a portion having a varying lateral resistivity
GB1153428A (en) * 1965-06-18 1969-05-29 Philips Nv Improvements in Semiconductor Devices.
DE1514495C3 (de) * 1965-07-01 1974-10-17 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiteranordnung
US3523188A (en) * 1965-12-20 1970-08-04 Xerox Corp Semiconductor current control device and method
US3384794A (en) * 1966-03-08 1968-05-21 Bell Telephone Laboraotries In Superconductive logic device
US3430203A (en) * 1966-06-28 1969-02-25 Texas Instruments Inc Trainable decision system utilizing metal-oxide-semiconductor field effect transistors
US3443175A (en) * 1967-03-22 1969-05-06 Rca Corp Pn-junction semiconductor with polycrystalline layer on one region
CH461646A (de) * 1967-04-18 1968-08-31 Ibm Feld-Effekt-Transistor und Verfahren zu seiner Herstellung
US3508211A (en) * 1967-06-23 1970-04-21 Sperry Rand Corp Electrically alterable non-destructive readout field effect transistor memory
US3463973A (en) * 1967-09-12 1969-08-26 Rca Corp Insulating ferroelectric gate adaptive resistor
US3531696A (en) * 1967-09-30 1970-09-29 Nippon Electric Co Semiconductor device with hysteretic capacity vs. voltage characteristics
US3590337A (en) * 1968-10-14 1971-06-29 Sperry Rand Corp Plural dielectric layered electrically alterable non-destructive readout memory element
US3591852A (en) * 1969-01-21 1971-07-06 Gen Electric Nonvolatile field effect transistor counter
US3832700A (en) * 1973-04-24 1974-08-27 Westinghouse Electric Corp Ferroelectric memory device
JPS5027901Y1 (fr) * 1973-11-07 1975-08-18
EP0115169B1 (fr) * 1982-12-28 1987-03-11 Toshiaki Ikoma Dispositif semi-conducteur de commutation par la tension électrique
KR930002470B1 (ko) * 1989-03-28 1993-04-02 가부시키가이샤 도시바 전기적인 독출/기록동작이 가능한 불휘발성 반도체기억장치 및 그 정보독출방법
JPH05503609A (ja) * 1990-02-26 1993-06-10 シンメトリックス・コーポレーション 電子デバイス、それらの製造法および利用法
JP3374216B2 (ja) * 1991-10-26 2003-02-04 ローム株式会社 強誘電体層を有する半導体素子
US6537830B1 (en) 1992-10-23 2003-03-25 Symetrix Corporation Method of making ferroelectric FET with polycrystalline crystallographically oriented ferroelectric material
US5523964A (en) * 1994-04-07 1996-06-04 Symetrix Corporation Ferroelectric non-volatile memory unit
US6373743B1 (en) 1999-08-30 2002-04-16 Symetrix Corporation Ferroelectric memory and method of operating same
US5644533A (en) * 1992-11-02 1997-07-01 Nvx Corporation Flash memory system, and methods of constructing and utilizing same
US6013950A (en) * 1994-05-19 2000-01-11 Sandia Corporation Semiconductor diode with external field modulation
US5541870A (en) * 1994-10-28 1996-07-30 Symetrix Corporation Ferroelectric memory and non-volatile memory cell for same
US5578846A (en) * 1995-03-17 1996-11-26 Evans, Jr.; Joseph T. Static ferroelectric memory transistor having improved data retention
JP3805001B2 (ja) * 1995-06-08 2006-08-02 株式会社ルネサステクノロジ 半導体装置
US5742076A (en) * 1996-06-05 1998-04-21 North Carolina State University Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance
US5767543A (en) * 1996-09-16 1998-06-16 Motorola, Inc. Ferroelectric semiconductor device having a layered ferroelectric structure
US6339238B1 (en) 1998-10-13 2002-01-15 Symetrix Corporation Ferroelectric field effect transistor, memory utilizing same, and method of operating same
US6441414B1 (en) 1998-10-13 2002-08-27 Symetrix Corporation Ferroelectric field effect transistor, memory utilizing same, and method of operating same
US6255121B1 (en) 1999-02-26 2001-07-03 Symetrix Corporation Method for fabricating ferroelectric field effect transistor having an interface insulator layer formed by a liquid precursor
US6236076B1 (en) 1999-04-29 2001-05-22 Symetrix Corporation Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient material
US20050094457A1 (en) * 1999-06-10 2005-05-05 Symetrix Corporation Ferroelectric memory and method of operating same
TW475267B (en) 1999-07-13 2002-02-01 Toshiba Corp Semiconductor memory
US8030575B2 (en) * 2005-12-29 2011-10-04 Sensor Electronic Technology, Inc. Mounting structure providing electrical surge protection
KR100653954B1 (ko) * 2006-01-19 2006-12-05 한국표준과학연구원 나노전자소자 및 그 제조방법
WO2007149003A1 (fr) * 2006-06-09 2007-12-27 Juri Heinrich Krieger Procédés de lecture non destructive des informations contenues dans des cellules de mémoire ferroélectrique
US8059458B2 (en) * 2007-12-31 2011-11-15 Cypress Semiconductor Corporation 3T high density nvDRAM cell
US8064255B2 (en) * 2007-12-31 2011-11-22 Cypress Semiconductor Corporation Architecture of a nvDRAM array and its sense regime
DE102008008699B4 (de) * 2008-02-11 2010-09-09 Eads Deutschland Gmbh Abstimmbarer planarer ferroelektrischer Kondensator
US7700985B2 (en) * 2008-06-24 2010-04-20 Seagate Technology Llc Ferroelectric memory using multiferroics
US9520445B2 (en) * 2011-07-12 2016-12-13 Helmholtz-Zentrum Dresden-Rossendorf E. V. Integrated non-volatile memory elements, design and use
KR102637368B1 (ko) * 2016-02-04 2024-02-19 세키스이가가쿠 고교가부시키가이샤 일렉트릿 시트

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2773250A (en) * 1953-05-13 1956-12-04 Int Standard Electric Corp Device for storing information
US2695398A (en) * 1953-06-16 1954-11-23 Bell Telephone Labor Inc Ferroelectric storage circuits

Also Published As

Publication number Publication date
FR1145450A (fr) 1957-10-25
NL97896C (fr)
US2791760A (en) 1957-05-07
CH349643A (fr) 1960-10-31
BE545324A (fr)
US2791758A (en) 1957-05-07
GB810452A (en) 1959-03-18
DE1024119B (de) 1958-02-13

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