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NL193883C - Ge´ntegreerde halfgeleiderinrichting. - Google Patents

Ge´ntegreerde halfgeleiderinrichting. Download PDF

Info

Publication number
NL193883C
NL193883C NL8600005A NL8600005A NL193883C NL 193883 C NL193883 C NL 193883C NL 8600005 A NL8600005 A NL 8600005A NL 8600005 A NL8600005 A NL 8600005A NL 193883 C NL193883 C NL 193883C
Authority
NL
Netherlands
Prior art keywords
elementary
transistors
transistor
power
power transistor
Prior art date
Application number
NL8600005A
Other languages
English (en)
Dutch (nl)
Other versions
NL193883B (nl
NL8600005A (nl
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Publication of NL8600005A publication Critical patent/NL8600005A/nl
Publication of NL193883B publication Critical patent/NL193883B/xx
Application granted granted Critical
Publication of NL193883C publication Critical patent/NL193883C/nl

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10Integrated device layouts
    • H10D89/105Integrated device layouts adapted for thermal considerations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B20/00Read-only memory [ROM] devices
    • H10B20/10ROM devices comprising bipolar components

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
NL8600005A 1985-01-08 1986-01-03 Ge´ntegreerde halfgeleiderinrichting. NL193883C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT8519050A IT1215230B (it) 1985-01-08 1985-01-08 Diretta. dispositivo a semiconduttore integrato con drastica riduzione dei fenomeni di rottura secondaria
IT1905085 1985-01-08

Publications (3)

Publication Number Publication Date
NL8600005A NL8600005A (nl) 1986-08-01
NL193883B NL193883B (nl) 2000-09-01
NL193883C true NL193883C (nl) 2001-01-03

Family

ID=11154125

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8600005A NL193883C (nl) 1985-01-08 1986-01-03 Ge´ntegreerde halfgeleiderinrichting.

Country Status (7)

Country Link
US (1) US4682197A (it)
JP (1) JP2594783B2 (it)
DE (1) DE3600207C2 (it)
FR (1) FR2575865B1 (it)
GB (1) GB2169447B (it)
IT (1) IT1215230B (it)
NL (1) NL193883C (it)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783690A (en) * 1983-09-06 1988-11-08 General Electric Company Power semiconductor device with main current section and emulation current section
IT1197307B (it) * 1986-09-30 1988-11-30 Sgs Microelettronica Spa Transistore di potenza con comportamento migliorato e autoprotetto nei confronti della rottura secondaria diretta
IT1198275B (it) * 1986-12-30 1988-12-21 Sgs Microelettronica Spa Transistore di potenza con miglioramento della resistenza alla rottura secondaria diretta
DE3802821A1 (de) * 1988-01-30 1989-08-03 Bosch Gmbh Robert Leistungstransistor
DE3802767A1 (de) * 1988-01-30 1989-08-10 Bosch Gmbh Robert Elektronisches geraet
IT1226563B (it) * 1988-07-29 1991-01-24 Sgs Thomson Microelectronics Circuito a transistor di potenza integrato comprendente mezzi per la riduzione delle sollecitazioni termiche
IT1230895B (it) * 1989-06-22 1991-11-08 Sgs Thomson Microelectronics Transistore di potenza integrabile con ottimizzazione dei fenomeni di rottura secondaria diretta.
US5488252A (en) * 1994-08-16 1996-01-30 Telefonaktiebolaget L M Erricsson Layout for radio frequency power transistors
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
US5804867A (en) * 1996-10-02 1998-09-08 Ericsson Inc. Thermally balanced radio frequency power transistor
SE522892C2 (sv) * 1999-09-28 2004-03-16 Ericsson Telefon Ab L M En förstärkarkrets för att förstärka signaler
US6611172B1 (en) * 2001-06-25 2003-08-26 Sirenza Microdevices, Inc. Thermally distributed darlington amplifier
US6583663B1 (en) * 2002-04-22 2003-06-24 Power Integrations, Inc. Power integrated circuit with distributed gate driver

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor
NL7405237A (nl) * 1974-04-18 1975-10-21 Philips Nv Parallelschakelen van halfgeleidersystemen.
JPS5165585A (it) * 1974-12-04 1976-06-07 Hitachi Ltd
US4276516A (en) * 1979-07-26 1981-06-30 National Semiconductor Corporation Thermal stress reduction in IC power transistors
US4371792A (en) * 1980-07-24 1983-02-01 National Semiconductor Corporation High gain composite transistor
JPS57138174A (en) * 1981-02-20 1982-08-26 Hitachi Ltd Semiconductor device
NL8204878A (nl) * 1982-12-17 1984-07-16 Philips Nv Halfgeleiderinrichting.

Also Published As

Publication number Publication date
DE3600207C2 (de) 2002-04-11
GB8600052D0 (en) 1986-02-12
JP2594783B2 (ja) 1997-03-26
IT8519050A0 (it) 1985-01-08
GB2169447A (en) 1986-07-09
DE3600207A1 (de) 1986-08-21
US4682197A (en) 1987-07-21
NL193883B (nl) 2000-09-01
IT1215230B (it) 1990-01-31
JPS61163656A (ja) 1986-07-24
NL8600005A (nl) 1986-08-01
FR2575865B1 (fr) 1991-05-03
FR2575865A1 (fr) 1986-07-11
GB2169447B (en) 1988-09-07

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
V1 Lapsed because of non-payment of the annual fee

Effective date: 20020801