NL188434C - Elektrodestructuur. - Google Patents
Elektrodestructuur.Info
- Publication number
- NL188434C NL188434C NLAANVRAGE8001226,A NL8001226A NL188434C NL 188434 C NL188434 C NL 188434C NL 8001226 A NL8001226 A NL 8001226A NL 188434 C NL188434 C NL 188434C
- Authority
- NL
- Netherlands
- Prior art keywords
- electrodestructure
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/50—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/02—Contacts, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/14—Schottky barrier contacts
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54055600A JPS5949711B2 (ja) | 1979-05-07 | 1979-05-07 | 電極付半導体装置 |
JP5560079 | 1979-05-07 | ||
JP5560179 | 1979-05-07 | ||
JP54055601A JPS5949712B2 (ja) | 1979-05-07 | 1979-05-07 | 半導体整流ダイオ−ド |
JP11321679 | 1979-09-04 | ||
JP11321679A JPS5637683A (en) | 1979-09-04 | 1979-09-04 | Semiconductor rectifying device |
Publications (3)
Publication Number | Publication Date |
---|---|
NL8001226A NL8001226A (nl) | 1980-11-11 |
NL188434B NL188434B (nl) | 1992-01-16 |
NL188434C true NL188434C (nl) | 1992-06-16 |
Family
ID=27295641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE8001226,A NL188434C (nl) | 1979-05-07 | 1980-02-29 | Elektrodestructuur. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4587547A (nl) |
CA (1) | CA1150417A (nl) |
DE (1) | DE3008034A1 (nl) |
FR (1) | FR2456389B1 (nl) |
GB (1) | GB2050694B (nl) |
NL (1) | NL188434C (nl) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5860577A (ja) * | 1981-10-07 | 1983-04-11 | Hitachi Ltd | 半導体装置 |
JPS5929469A (ja) * | 1982-08-11 | 1984-02-16 | Hitachi Ltd | 半導体装置 |
EP0130669A1 (en) * | 1983-04-30 | 1985-01-09 | Kabushiki Kaisha Toshiba | Gate turn off thyristor with mesh cathode structure |
DE3628857A1 (de) * | 1985-08-27 | 1987-03-12 | Mitsubishi Electric Corp | Halbleitereinrichtung |
DE3633161A1 (de) * | 1986-09-30 | 1988-04-07 | Licentia Gmbh | Halbleiterbauelement mit einer anodenseitigen p-zone und einer anliegenden schwach dotierten n-basiszone |
JPH0795592B2 (ja) * | 1987-04-14 | 1995-10-11 | 株式会社豊田中央研究所 | 静電誘導型半導体装置 |
JP2706120B2 (ja) * | 1988-02-12 | 1998-01-28 | アゼア ブラウン ボヴェリ アクチェンゲゼルシャフト | Gtoパワーサイリスタ |
DE3939324A1 (de) * | 1989-11-28 | 1991-05-29 | Eupec Gmbh & Co Kg | Leistungs-halbleiterbauelement mit emitterkurzschluessen |
US5119148A (en) * | 1989-11-29 | 1992-06-02 | Motorola, Inc. | Fast damper diode and method |
JP2663679B2 (ja) * | 1990-04-20 | 1997-10-15 | 富士電機株式会社 | 伝導度変調型mosfet |
JP3321185B2 (ja) * | 1990-09-28 | 2002-09-03 | 株式会社東芝 | 高耐圧半導体装置 |
DE4201183A1 (de) * | 1992-01-17 | 1993-07-22 | Eupec Gmbh & Co Kg | Leistungsdiode |
US5369291A (en) * | 1993-03-29 | 1994-11-29 | Sunpower Corporation | Voltage controlled thyristor |
US5360990A (en) * | 1993-03-29 | 1994-11-01 | Sunpower Corporation | P/N junction device having porous emitter |
DE4342482C2 (de) * | 1993-12-13 | 1995-11-30 | Siemens Ag | Schnelle Leistungshalbleiterbauelemente |
US5705830A (en) * | 1996-09-05 | 1998-01-06 | Northrop Grumman Corporation | Static induction transistors |
WO1999013512A1 (de) * | 1997-09-10 | 1999-03-18 | Infineon Technologies Ag | Halbleiterbauelement mit einer driftzone |
JP4017258B2 (ja) * | 1998-07-29 | 2007-12-05 | 三菱電機株式会社 | 半導体装置 |
WO2001006569A1 (en) * | 1999-07-15 | 2001-01-25 | Rohm Co., Ltd. | Semiconductor device including mos field-effect transistor |
DE102004005084B4 (de) * | 2004-02-02 | 2013-03-14 | Infineon Technologies Ag | Halbleiterbauelement |
US20050275065A1 (en) * | 2004-06-14 | 2005-12-15 | Tyco Electronics Corporation | Diode with improved energy impulse rating |
DE102004044141A1 (de) * | 2004-09-13 | 2006-03-30 | Robert Bosch Gmbh | Halbleiteranordnung zur Spannungsbegrenzung |
JP2006295062A (ja) * | 2005-04-14 | 2006-10-26 | Rohm Co Ltd | 半導体装置 |
JP2010283132A (ja) | 2009-06-04 | 2010-12-16 | Mitsubishi Electric Corp | 半導体装置 |
JP5321669B2 (ja) | 2010-11-25 | 2013-10-23 | 株式会社デンソー | 半導体装置 |
US8809902B2 (en) * | 2011-10-17 | 2014-08-19 | Infineon Technologies Austria Ag | Power semiconductor diode, IGBT, and method for manufacturing thereof |
US9123828B2 (en) | 2013-11-14 | 2015-09-01 | Infineon Technologies Ag | Semiconductor device and method for forming a semiconductor device |
JP6443267B2 (ja) | 2015-08-28 | 2018-12-26 | 株式会社デンソー | 半導体装置 |
JP6750668B2 (ja) * | 2016-02-29 | 2020-09-02 | 三菱電機株式会社 | 半導体装置 |
JP6846119B2 (ja) * | 2016-05-02 | 2021-03-24 | 株式会社 日立パワーデバイス | ダイオード、およびそれを用いた電力変換装置 |
EP3891800A1 (en) | 2018-12-03 | 2021-10-13 | MACOM Technology Solutions Holdings, Inc. | Pin diodes with multi-thickness intrinsic regions |
US11127737B2 (en) * | 2019-02-12 | 2021-09-21 | Macom Technology Solutions Holdings, Inc. | Monolithic multi-I region diode limiters |
CN112701150A (zh) * | 2019-10-23 | 2021-04-23 | 世界先进积体电路股份有限公司 | 半导体结构 |
US20210343837A1 (en) * | 2020-05-01 | 2021-11-04 | Vanguard International Semiconductor Corporation | Semiconductor structures |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL122949C (nl) * | 1958-06-25 | 1900-01-01 | ||
NL278058A (nl) * | 1961-05-26 | |||
US3395320A (en) * | 1965-08-25 | 1968-07-30 | Bell Telephone Labor Inc | Isolation technique for integrated circuit structure |
CH452710A (de) * | 1966-12-29 | 1968-03-15 | Bbc Brown Boveri & Cie | Verfahren zur Herstellung eines steuerbaren Halbleiterventils mit pnpn Struktur mit einer mit Kurzschlüssen versehenen Emitterzone |
CH474154A (de) * | 1967-02-10 | 1969-06-15 | Licentia Gmbh | Halbleiterbauelement |
US3497776A (en) * | 1968-03-06 | 1970-02-24 | Westinghouse Electric Corp | Uniform avalanche-breakdown rectifiers |
US3617829A (en) * | 1969-12-01 | 1971-11-02 | Motorola Inc | Radiation-insensitive voltage standard means |
US3641403A (en) * | 1970-05-25 | 1972-02-08 | Mitsubishi Electric Corp | Thyristor with degenerate semiconductive region |
JPS5213918B2 (nl) * | 1972-02-02 | 1977-04-18 | ||
JPS5548705B2 (nl) * | 1973-06-28 | 1980-12-08 | ||
US3918082A (en) * | 1973-11-07 | 1975-11-04 | Jearld L Hutson | Semiconductor switching device |
DE2506102C3 (de) * | 1975-02-13 | 1982-03-25 | Siemens AG, 1000 Berlin und 8000 München | Halbleitergleichrichter |
NL7612883A (nl) * | 1976-11-19 | 1978-05-23 | Philips Nv | Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan. |
US4156246A (en) * | 1977-05-25 | 1979-05-22 | Bell Telephone Laboratories, Incorporated | Combined ohmic and Schottky output transistors for logic circuit |
-
1980
- 1980-02-27 GB GB8006652A patent/GB2050694B/en not_active Expired
- 1980-02-29 NL NLAANVRAGE8001226,A patent/NL188434C/nl not_active IP Right Cessation
- 1980-03-03 DE DE19803008034 patent/DE3008034A1/de active Granted
- 1980-03-05 FR FR8004965A patent/FR2456389B1/fr not_active Expired
- 1980-03-05 CA CA000347000A patent/CA1150417A/en not_active Expired
-
1983
- 1983-07-12 US US06/512,942 patent/US4587547A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2456389A1 (fr) | 1980-12-05 |
NL188434B (nl) | 1992-01-16 |
GB2050694A (en) | 1981-01-07 |
CA1150417A (en) | 1983-07-19 |
NL8001226A (nl) | 1980-11-11 |
DE3008034A1 (de) | 1980-11-13 |
GB2050694B (en) | 1983-09-28 |
FR2456389B1 (fr) | 1985-09-27 |
US4587547A (en) | 1986-05-06 |
DE3008034C2 (nl) | 1989-04-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1A | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
A85 | Still pending on 85-01-01 | ||
CNR | Transfer of rights (patent application after its laying open for public inspection) |
Free format text: NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
|
BC | A request for examination has been filed | ||
V4 | Discontinued because of reaching the maximum lifetime of a patent |
Free format text: 20000229 |