NL184184C - Werkwijze voor het aanbrengen van kontaktverhogingen op kontaktplaatsen van een electronische microketen. - Google Patents
Werkwijze voor het aanbrengen van kontaktverhogingen op kontaktplaatsen van een electronische microketen.Info
- Publication number
- NL184184C NL184184C NL8101371A NL8101371A NL184184C NL 184184 C NL184184 C NL 184184C NL 8101371 A NL8101371 A NL 8101371A NL 8101371 A NL8101371 A NL 8101371A NL 184184 C NL184184 C NL 184184C
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Manufacture Of Switches (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8101371A NL184184C (nl) | 1981-03-20 | 1981-03-20 | Werkwijze voor het aanbrengen van kontaktverhogingen op kontaktplaatsen van een electronische microketen. |
US06/353,724 US4442967A (en) | 1981-03-20 | 1982-03-01 | Method of providing raised electrical contacts on electronic microcircuits |
DE3209242A DE3209242C2 (de) | 1981-03-20 | 1982-03-13 | Verfahren zum Anbringen von Kontakterhöhungen an Kontaktstellen einer elektronischen Mikroschaltung |
AU81603/82A AU548433B2 (en) | 1981-03-20 | 1982-03-17 | Raised contact portions of electronic microcircuit |
IT2023782A IT1150472B (it) | 1981-03-20 | 1982-03-17 | Metodo per la creazione di porzioni sollevate di contatto su arre di contatto di un microcircuiro eletronico |
FR8204519A FR2502397B1 (fr) | 1981-03-20 | 1982-03-17 | Procede permettant d'appliquer des surepaisseurs aux plages de contact d'un microcircuit electronique |
GB8207808A GB2095473B (en) | 1981-03-20 | 1982-03-17 | Providing raised contact portions on contact areas of a microelectronic device |
CH1667/82A CH658540A5 (de) | 1981-03-20 | 1982-03-17 | Verfahren zum anbringen von kontakterhoehungen an kontaktstellen einer elektronischen mikroschaltung. |
KR8201156A KR900007043B1 (ko) | 1981-03-20 | 1982-03-18 | 전자 마이크로 회로의 접촉 영역상에 상승 접촉부를 제공하는 방법 |
IE631/82A IE53371B1 (en) | 1981-03-20 | 1982-03-18 | Method of providing raised contact portions on contact areas of an electronic microcircuit |
CA000398699A CA1181534A (en) | 1981-03-20 | 1982-03-18 | Method of providing raised contact portions on contact areas of an electronic microcircuit |
JP4180782A JPS57163919A (en) | 1981-03-20 | 1982-03-18 | Method of forming protruded contact |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8101371 | 1981-03-20 | ||
NL8101371A NL184184C (nl) | 1981-03-20 | 1981-03-20 | Werkwijze voor het aanbrengen van kontaktverhogingen op kontaktplaatsen van een electronische microketen. |
Publications (3)
Publication Number | Publication Date |
---|---|
NL8101371A NL8101371A (nl) | 1982-10-18 |
NL184184B NL184184B (nl) | 1988-12-01 |
NL184184C true NL184184C (nl) | 1989-05-01 |
Family
ID=19837199
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8101371A NL184184C (nl) | 1981-03-20 | 1981-03-20 | Werkwijze voor het aanbrengen van kontaktverhogingen op kontaktplaatsen van een electronische microketen. |
Country Status (12)
Country | Link |
---|---|
US (1) | US4442967A (nl) |
JP (1) | JPS57163919A (nl) |
KR (1) | KR900007043B1 (nl) |
AU (1) | AU548433B2 (nl) |
CA (1) | CA1181534A (nl) |
CH (1) | CH658540A5 (nl) |
DE (1) | DE3209242C2 (nl) |
FR (1) | FR2502397B1 (nl) |
GB (1) | GB2095473B (nl) |
IE (1) | IE53371B1 (nl) |
IT (1) | IT1150472B (nl) |
NL (1) | NL184184C (nl) |
Families Citing this family (95)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2555813B1 (fr) * | 1983-09-28 | 1986-06-20 | Hitachi Ltd | Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif |
US4845543A (en) * | 1983-09-28 | 1989-07-04 | Hitachi, Ltd. | Semiconductor device and method of manufacturing the same |
IT1183375B (it) * | 1984-02-24 | 1987-10-22 | Hitachi Ltd | Dispositivo a semiconduttori comprendente una pallina, fili conduttori e porzioni conduttrici esterneche sono collegate alla pallina mediante tali fili conduttori |
JPS60223149A (ja) * | 1984-04-19 | 1985-11-07 | Hitachi Ltd | 半導体装置 |
US5917707A (en) | 1993-11-16 | 1999-06-29 | Formfactor, Inc. | Flexible contact structure with an electrically conductive shell |
US5189507A (en) * | 1986-12-17 | 1993-02-23 | Raychem Corporation | Interconnection of electronic components |
JPS63173345A (ja) * | 1987-01-12 | 1988-07-16 | Nec Kansai Ltd | バンプ電極形成方法 |
GB2201545B (en) * | 1987-01-30 | 1991-09-11 | Tanaka Electronics Ind | Method for connecting semiconductor material |
EP0376924A3 (en) * | 1987-05-21 | 1990-08-22 | RAYCHEM CORPORATION (a Delaware corporation) | Gold compression bonding |
US5054192A (en) * | 1987-05-21 | 1991-10-08 | Cray Computer Corporation | Lead bonding of chips to circuit boards and circuit boards to circuit boards |
US5112232A (en) * | 1987-05-21 | 1992-05-12 | Cray Computer Corporation | Twisted wire jumper electrical interconnector |
US5184400A (en) * | 1987-05-21 | 1993-02-09 | Cray Computer Corporation | Method for manufacturing a twisted wire jumper electrical interconnector |
US5195237A (en) * | 1987-05-21 | 1993-03-23 | Cray Computer Corporation | Flying leads for integrated circuits |
JP2506861B2 (ja) * | 1987-12-08 | 1996-06-12 | 松下電器産業株式会社 | 電気的接続接点の形成方法 |
US5014111A (en) * | 1987-12-08 | 1991-05-07 | Matsushita Electric Industrial Co., Ltd. | Electrical contact bump and a package provided with the same |
JPH0237735A (ja) * | 1988-07-27 | 1990-02-07 | Semiconductor Energy Lab Co Ltd | 半導体チップの実装構造 |
DE3829538A1 (de) * | 1988-08-31 | 1990-03-08 | Siemens Ag | Verfahren zum verbinden eines halbleiterchips mit einem substrat |
JPH02101754A (ja) * | 1988-10-11 | 1990-04-13 | Hitachi Ltd | ボンディング方法及びボンディング装置 |
US4948030A (en) * | 1989-01-30 | 1990-08-14 | Motorola, Inc. | Bond connection for components |
JPH0749794Y2 (ja) * | 1989-03-15 | 1995-11-13 | 三菱マテリアル株式会社 | ワイヤレスボンデイング用金バンプ |
JPH02250328A (ja) * | 1989-03-24 | 1990-10-08 | Toshiba Corp | ワイヤボンダ、ワイヤボンダを用いたバンプ形成方法 |
US5060843A (en) * | 1989-06-07 | 1991-10-29 | Nec Corporation | Process of forming bump on electrode of semiconductor chip and apparatus used therefor |
JP2830109B2 (ja) * | 1989-07-19 | 1998-12-02 | 日本電気株式会社 | バンプ形成方法およびバンプ形成装置 |
JPH03208354A (ja) * | 1990-01-10 | 1991-09-11 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5172851A (en) * | 1990-09-20 | 1992-12-22 | Matsushita Electronics Corporation | Method of forming a bump electrode and manufacturing a resin-encapsulated semiconductor device |
JP2555811B2 (ja) * | 1991-09-10 | 1996-11-20 | 富士通株式会社 | 半導体チップのフリップチップ接合方法 |
DE4307162C2 (de) * | 1993-03-06 | 2000-06-08 | Amatech Advanced Micromechanic | Verbindung, Verfahren und Vorrichtung zur Herstellung einer Verbindung auf einer Chipanschlußfläche |
KR960000793B1 (ko) * | 1993-04-07 | 1996-01-12 | 삼성전자주식회사 | 노운 굳 다이 어레이 및 그 제조방법 |
US20020053734A1 (en) | 1993-11-16 | 2002-05-09 | Formfactor, Inc. | Probe card assembly and kit, and methods of making same |
US5820014A (en) | 1993-11-16 | 1998-10-13 | Form Factor, Inc. | Solder preforms |
US5559054A (en) * | 1994-12-23 | 1996-09-24 | Motorola, Inc. | Method for ball bumping a semiconductor device |
JP3252153B2 (ja) * | 1995-03-10 | 2002-01-28 | エルク ザケル | 隆起接点メタライゼーションを形成する方法及びボンディングツール |
US5650667A (en) * | 1995-10-30 | 1997-07-22 | National Semiconductor Corporation | Process of forming conductive bumps on the electrodes of semiconductor chips using lapping and the bumps thereby created |
US8033838B2 (en) | 1996-02-21 | 2011-10-11 | Formfactor, Inc. | Microelectronic contact structure |
US5994152A (en) | 1996-02-21 | 1999-11-30 | Formfactor, Inc. | Fabricating interconnects and tips using sacrificial substrates |
JP3349886B2 (ja) | 1996-04-18 | 2002-11-25 | 松下電器産業株式会社 | 半導体素子の2段突起形状バンプの形成方法 |
JP3344235B2 (ja) * | 1996-10-07 | 2002-11-11 | 株式会社デンソー | ワイヤボンディング方法 |
JP2000133672A (ja) | 1998-10-28 | 2000-05-12 | Seiko Epson Corp | 半導体装置及びその製造方法、回路基板並びに電子機器 |
JP2000150560A (ja) | 1998-11-13 | 2000-05-30 | Seiko Epson Corp | バンプ形成方法及びバンプ形成用ボンディングツール、半導体ウエーハ、半導体チップ及び半導体装置並びにこれらの製造方法、回路基板並びに電子機器 |
CN1184616C (zh) | 1998-12-04 | 2005-01-12 | 阿尔卑斯电气株式会社 | 磁头和磁头的制造方法及其所用的连接用毛细管 |
US6227437B1 (en) | 1999-08-24 | 2001-05-08 | Kulicke & Soffa Industries Inc. | Solder ball delivery and reflow apparatus and method of using the same |
US6386433B1 (en) | 1999-08-24 | 2002-05-14 | Kulicke & Soffa Investments, Inc. | Solder ball delivery and reflow apparatus and method |
JP4000743B2 (ja) | 2000-03-13 | 2007-10-31 | 株式会社デンソー | 電子部品の実装方法 |
DE60130111D1 (de) | 2000-04-20 | 2007-10-04 | Elwyn Paul Michael Wakefield | Verfahren zur herstellung elektrischer/mechanischer verbindungen |
GB2362504A (en) * | 2000-04-20 | 2001-11-21 | Pixel Fusion Ltd | Pin contacts |
US6350386B1 (en) | 2000-09-20 | 2002-02-26 | Charles W. C. Lin | Method of making a support circuit with a tapered through-hole for a semiconductor chip assembly |
US6350632B1 (en) | 2000-09-20 | 2002-02-26 | Charles W. C. Lin | Semiconductor chip assembly with ball bond connection joint |
US6511865B1 (en) | 2000-09-20 | 2003-01-28 | Charles W. C. Lin | Method for forming a ball bond connection joint on a conductive trace and conductive pad in a semiconductor chip assembly |
US6448108B1 (en) | 2000-10-02 | 2002-09-10 | Charles W. C. Lin | Method of making a semiconductor chip assembly with a conductive trace subtractively formed before and after chip attachment |
US6544813B1 (en) | 2000-10-02 | 2003-04-08 | Charles W. C. Lin | Method of making a semiconductor chip assembly with a conductive trace subtractively formed before and after chip attachment |
US7414319B2 (en) * | 2000-10-13 | 2008-08-19 | Bridge Semiconductor Corporation | Semiconductor chip assembly with metal containment wall and solder terminal |
US7075186B1 (en) | 2000-10-13 | 2006-07-11 | Bridge Semiconductor Corporation | Semiconductor chip assembly with interlocked contact terminal |
US6576493B1 (en) | 2000-10-13 | 2003-06-10 | Bridge Semiconductor Corporation | Method of connecting a conductive trace and an insulative base to a semiconductor chip using multiple etch steps |
US6908788B1 (en) | 2000-10-13 | 2005-06-21 | Bridge Semiconductor Corporation | Method of connecting a conductive trace to a semiconductor chip using a metal base |
US7132741B1 (en) | 2000-10-13 | 2006-11-07 | Bridge Semiconductor Corporation | Semiconductor chip assembly with carved bumped terminal |
US7094676B1 (en) | 2000-10-13 | 2006-08-22 | Bridge Semiconductor Corporation | Semiconductor chip assembly with embedded metal pillar |
US6876072B1 (en) | 2000-10-13 | 2005-04-05 | Bridge Semiconductor Corporation | Semiconductor chip assembly with chip in substrate cavity |
US7009297B1 (en) | 2000-10-13 | 2006-03-07 | Bridge Semiconductor Corporation | Semiconductor chip assembly with embedded metal particle |
US6949408B1 (en) | 2000-10-13 | 2005-09-27 | Bridge Semiconductor Corporation | Method of connecting a conductive trace and an insulative base to a semiconductor chip using multiple etch steps |
US6440835B1 (en) | 2000-10-13 | 2002-08-27 | Charles W. C. Lin | Method of connecting a conductive trace to a semiconductor chip |
US6576539B1 (en) | 2000-10-13 | 2003-06-10 | Charles W.C. Lin | Semiconductor chip assembly with interlocked conductive trace |
US6667229B1 (en) | 2000-10-13 | 2003-12-23 | Bridge Semiconductor Corporation | Method of connecting a bumped compliant conductive trace and an insulative base to a semiconductor chip |
US6984576B1 (en) | 2000-10-13 | 2006-01-10 | Bridge Semiconductor Corporation | Method of connecting an additively and subtractively formed conductive trace and an insulative base to a semiconductor chip |
US7319265B1 (en) | 2000-10-13 | 2008-01-15 | Bridge Semiconductor Corporation | Semiconductor chip assembly with precision-formed metal pillar |
US6872591B1 (en) | 2000-10-13 | 2005-03-29 | Bridge Semiconductor Corporation | Method of making a semiconductor chip assembly with a conductive trace and a substrate |
US7071089B1 (en) | 2000-10-13 | 2006-07-04 | Bridge Semiconductor Corporation | Method of making a semiconductor chip assembly with a carved bumped terminal |
US6548393B1 (en) | 2000-10-13 | 2003-04-15 | Charles W. C. Lin | Semiconductor chip assembly with hardened connection joint |
US7190080B1 (en) | 2000-10-13 | 2007-03-13 | Bridge Semiconductor Corporation | Semiconductor chip assembly with embedded metal pillar |
US6537851B1 (en) | 2000-10-13 | 2003-03-25 | Bridge Semiconductor Corporation | Method of connecting a bumped compliant conductive trace to a semiconductor chip |
US6492252B1 (en) | 2000-10-13 | 2002-12-10 | Bridge Semiconductor Corporation | Method of connecting a bumped conductive trace to a semiconductor chip |
US7262082B1 (en) | 2000-10-13 | 2007-08-28 | Bridge Semiconductor Corporation | Method of making a three-dimensional stacked semiconductor package with a metal pillar and a conductive interconnect in an encapsulant aperture |
US7129575B1 (en) | 2000-10-13 | 2006-10-31 | Bridge Semiconductor Corporation | Semiconductor chip assembly with bumped metal pillar |
US7129113B1 (en) | 2000-10-13 | 2006-10-31 | Bridge Semiconductor Corporation | Method of making a three-dimensional stacked semiconductor package with a metal pillar in an encapsulant aperture |
US7264991B1 (en) | 2000-10-13 | 2007-09-04 | Bridge Semiconductor Corporation | Method of connecting a conductive trace to a semiconductor chip using conductive adhesive |
US6740576B1 (en) | 2000-10-13 | 2004-05-25 | Bridge Semiconductor Corporation | Method of making a contact terminal with a plated metal peripheral sidewall portion for a semiconductor chip assembly |
US6699780B1 (en) | 2000-10-13 | 2004-03-02 | Bridge Semiconductor Corporation | Method of connecting a conductive trace to a semiconductor chip using plasma undercut etching |
US6673710B1 (en) | 2000-10-13 | 2004-01-06 | Bridge Semiconductor Corporation | Method of connecting a conductive trace and an insulative base to a semiconductor chip |
US6444489B1 (en) | 2000-12-15 | 2002-09-03 | Charles W. C. Lin | Semiconductor chip assembly with bumped molded substrate |
US6653170B1 (en) | 2001-02-06 | 2003-11-25 | Charles W. C. Lin | Semiconductor chip assembly with elongated wire ball bonded to chip and electrolessly plated to support circuit |
JP3935370B2 (ja) * | 2002-02-19 | 2007-06-20 | セイコーエプソン株式会社 | バンプ付き半導体素子の製造方法、半導体装置及びその製造方法、回路基板並びに電子機器 |
US6622903B1 (en) * | 2002-03-27 | 2003-09-23 | Palomar Technologies, Inc. | Production of a tailless ball bump |
JP3854232B2 (ja) * | 2003-02-17 | 2006-12-06 | 株式会社新川 | バンプ形成方法及びワイヤボンディング方法 |
DE10325566A1 (de) * | 2003-06-05 | 2005-01-13 | Infineon Technologies Ag | Chipkartenmodul |
US7993983B1 (en) | 2003-11-17 | 2011-08-09 | Bridge Semiconductor Corporation | Method of making a semiconductor chip assembly with chip and encapsulant grinding |
US7425759B1 (en) | 2003-11-20 | 2008-09-16 | Bridge Semiconductor Corporation | Semiconductor chip assembly with bumped terminal and filler |
US7538415B1 (en) | 2003-11-20 | 2009-05-26 | Bridge Semiconductor Corporation | Semiconductor chip assembly with bumped terminal, filler and insulative base |
US7268421B1 (en) * | 2004-11-10 | 2007-09-11 | Bridge Semiconductor Corporation | Semiconductor chip assembly with welded metal pillar that includes enlarged ball bond |
US7750483B1 (en) | 2004-11-10 | 2010-07-06 | Bridge Semiconductor Corporation | Semiconductor chip assembly with welded metal pillar and enlarged plated contact terminal |
US7446419B1 (en) | 2004-11-10 | 2008-11-04 | Bridge Semiconductor Corporation | Semiconductor chip assembly with welded metal pillar of stacked metal balls |
US20070216026A1 (en) * | 2006-03-20 | 2007-09-20 | Adams Zhu | Aluminum bump bonding for fine aluminum wire |
DE102006033222B4 (de) * | 2006-07-18 | 2014-04-30 | Epcos Ag | Modul mit flachem Aufbau und Verfahren zur Bestückung |
DE102006038875B4 (de) * | 2006-08-18 | 2013-02-28 | Infineon Technologies Ag | Herstellungsverfahre für ein elektronisches Bauelement und elektronisches Bauelement |
US7811863B1 (en) | 2006-10-26 | 2010-10-12 | Bridge Semiconductor Corporation | Method of making a semiconductor chip assembly with metal pillar and encapsulant grinding and heat sink attachment |
US7494843B1 (en) | 2006-12-26 | 2009-02-24 | Bridge Semiconductor Corporation | Method of making a semiconductor chip assembly with thermal conductor and encapsulant grinding |
US8372741B1 (en) * | 2012-02-24 | 2013-02-12 | Invensas Corporation | Method for package-on-package assembly with wire bonds to encapsulation surface |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3357090A (en) * | 1963-05-23 | 1967-12-12 | Transitron Electronic Corp | Vibratory welding tip and method of welding |
US3358897A (en) * | 1964-03-31 | 1967-12-19 | Tempress Res Co | Electric lead wire bonding tools |
US3430835A (en) * | 1966-06-07 | 1969-03-04 | Westinghouse Electric Corp | Wire bonding apparatus for microelectronic components |
US3460238A (en) * | 1967-04-20 | 1969-08-12 | Motorola Inc | Wire severing in wire bonding machines |
DE7006122U (nl) * | 1969-04-26 | 1900-01-01 | ||
US3623649A (en) * | 1969-06-09 | 1971-11-30 | Gen Motors Corp | Wedge bonding tool for the attachment of semiconductor leads |
DE2006703A1 (de) * | 1970-02-13 | 1971-08-26 | Siemens Ag | Isolationsschicht auf einem Halbleiter grundkorper |
JPS50160773A (nl) * | 1974-06-18 | 1975-12-26 | ||
GB1536872A (en) * | 1975-05-15 | 1978-12-20 | Welding Inst | Electrical inter-connection method and apparatus |
FR2412943A1 (fr) * | 1977-12-20 | 1979-07-20 | Thomson Csf | Procede de realisation de connexions d'un dispositif semi-conducteur sur embase, appareil pour la mise en oeuvre du procede, et dispositif semi-conducteur obtenu par ce procede |
US4213556A (en) * | 1978-10-02 | 1980-07-22 | General Motors Corporation | Method and apparatus to detect automatic wire bonder failure |
JPS55118643A (en) * | 1979-03-06 | 1980-09-11 | Toshiba Corp | Wire bonding process |
JPS55158642A (en) * | 1979-05-30 | 1980-12-10 | Noge Denki Kogyo:Kk | Bonding alloy wire for assembling semiconductor device |
-
1981
- 1981-03-20 NL NL8101371A patent/NL184184C/nl not_active IP Right Cessation
-
1982
- 1982-03-01 US US06/353,724 patent/US4442967A/en not_active Expired - Lifetime
- 1982-03-13 DE DE3209242A patent/DE3209242C2/de not_active Expired
- 1982-03-17 GB GB8207808A patent/GB2095473B/en not_active Expired
- 1982-03-17 CH CH1667/82A patent/CH658540A5/de not_active IP Right Cessation
- 1982-03-17 FR FR8204519A patent/FR2502397B1/fr not_active Expired
- 1982-03-17 AU AU81603/82A patent/AU548433B2/en not_active Ceased
- 1982-03-17 IT IT2023782A patent/IT1150472B/it active
- 1982-03-18 KR KR8201156A patent/KR900007043B1/ko active
- 1982-03-18 CA CA000398699A patent/CA1181534A/en not_active Expired
- 1982-03-18 IE IE631/82A patent/IE53371B1/en not_active IP Right Cessation
- 1982-03-18 JP JP4180782A patent/JPS57163919A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57163919A (en) | 1982-10-08 |
GB2095473B (en) | 1984-09-19 |
CH658540A5 (de) | 1986-11-14 |
KR900007043B1 (ko) | 1990-09-27 |
FR2502397B1 (fr) | 1986-07-25 |
FR2502397A1 (fr) | 1982-09-24 |
JPH0441519B2 (nl) | 1992-07-08 |
DE3209242A1 (de) | 1982-11-11 |
GB2095473A (en) | 1982-09-29 |
IE820631L (en) | 1982-09-20 |
IT1150472B (it) | 1986-12-10 |
CA1181534A (en) | 1985-01-22 |
DE3209242C2 (de) | 1985-04-11 |
AU8160382A (en) | 1982-09-23 |
AU548433B2 (en) | 1985-12-12 |
US4442967A (en) | 1984-04-17 |
NL8101371A (nl) | 1982-10-18 |
IE53371B1 (en) | 1988-10-26 |
IT8220237A0 (it) | 1982-03-17 |
KR830009648A (ko) | 1983-12-22 |
NL184184B (nl) | 1988-12-01 |
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