NL179775C - Halfgeleiderbeeldopneeminrichting. - Google Patents

Halfgeleiderbeeldopneeminrichting.

Info

Publication number: NL179775C
Authority: NL; Netherlands
Prior art keywords: recording device; image recording; semiconductor image; semiconductor; recording
Prior art date: 1976-10-06

Application number

NLAANVRAGE7711000,A

Other languages

English (en)

Other versions

NL7711000A (nl

NL179775B (nl

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1976-10-06

Filing date

1977-10-06

Publication date

1986-11-03

1977-10-06 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1978-04-10 Publication of NL7711000A publication Critical patent/NL7711000A/nl

1986-06-02 Publication of NL179775B publication Critical patent/NL179775B/nl

1986-11-03 Application granted granted Critical

1986-11-03 Publication of NL179775C publication Critical patent/NL179775C/nl

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

NLAANVRAGE7711000,A 1976-10-06 1977-10-06 Halfgeleiderbeeldopneeminrichting. NL179775C (nl)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP11934776A JPS5345119A (en)	1976-10-06	1976-10-06	Solid state pickup element

Publications (3)

Publication Number	Publication Date
NL7711000A NL7711000A (nl)	1978-04-10
NL179775B NL179775B (nl)	1986-06-02
NL179775C true NL179775C (nl)	1986-11-03

Family

ID=14759228

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NLAANVRAGE7711000,A NL179775C (nl)	1976-10-06	1977-10-06	Halfgeleiderbeeldopneeminrichting.

Country Status (6)

Country	Link
US (1)	US4155094A (nl)
JP (1)	JPS5345119A (nl)
DE (1)	DE2745046C3 (nl)
FR (1)	FR2367353A1 (nl)
GB (1)	GB1531180A (nl)
NL (1)	NL179775C (nl)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1592373A (en) *	1976-12-30	1981-07-08	Ibm	Photodetector
JPS53125791A (en) *	1977-04-08	1978-11-02	Toshiba Corp	Solidstate pick up unit
JPS6017196B2 (ja) *	1978-01-23	1985-05-01	株式会社日立製作所	固体撮像素子
US4236829A (en) *	1978-01-31	1980-12-02	Matsushita Electric Industrial Co., Ltd.	Solid-state image sensor
JPS54114922A (en) *	1978-02-27	1979-09-07	Nec Corp	Two dimentional pick up element and its drive
JPS54154382A (en) *	1978-05-25	1979-12-05	Canon Inc	Photo sensor device
FR2433868A1 (fr) *	1978-08-17	1980-03-14	Hitachi Ltd	Dispositif de formation d'image a semi-conducteur
DE2939518A1 (de) *	1979-09-28	1981-04-16	Siemens AG, 1000 Berlin und 8000 München	Monolithisch integrierte schaltung zur zeilenweisen bildabtastung
DE2943143A1 (de) *	1979-10-25	1981-05-07	Siemens AG, 1000 Berlin und 8000 München	Infrarotempfindler x-y-ccd-sensor und verfahren zu seiner herstellung
US4322638A (en) *	1980-01-16	1982-03-30	Eastman Kodak Company	Image sensor adaptable for fast frame readout
FR2481553A1 (fr) *	1980-04-23	1981-10-30	Thomson Csf	Dispositif photosensible lu par transfert de charges et camera de television comportant un tel dispositif
US4484210A (en) *	1980-09-05	1984-11-20	Nippon Electric Co., Ltd.	Solid-state imaging device having a reduced image lag
FR2501943B1 (fr) *	1981-03-13	1986-01-17	Thomson Csf	Dispositif photosensible solide a deux dimensions et dispositif d'analyse d'image, utilisant le transfert de charges electriques, comportant un tel dispositif
FR2503502B1 (fr) *	1981-03-31	1985-07-05	Thomson Csf	Dispositif d'analyse d'images en couleur utilisant le transfert de charges electriques et camera de television comportant un tel dispositif
DE3138294A1 (de) *	1981-09-25	1983-04-14	Siemens AG, 1000 Berlin und 8000 München	Zweidimensionaler halbleiter-bildsensor mit steuerung oder regelung der integrationszeit
US4481522A (en) *	1982-03-24	1984-11-06	Rca Corporation	CCD Imagers with substrates having drift field
CA1241418A (en) *	1983-07-06	1988-08-30	Johannes M. Sevenhans	Radiation-sensitive semiconductor device
US4807007A (en) *	1983-10-03	1989-02-21	Texas Instruments Incorporated	Mis infrared detector having a storage area
US4665325A (en) *	1984-01-30	1987-05-12	Matsushita Electric Industrial Co., Ltd.	Solid state image sensor with signal amplification
US4606115A (en) *	1985-05-14	1986-08-19	Motorola, Inc.	Method of manufacturing optically sensitive semiconductor devices including anti-reflective coatings
US4720746A (en) *	1985-08-05	1988-01-19	Eastman Kodak Company	Frame transfer CCD area image sensor with improved horizontal resolution
DE3706278A1 (de) *	1986-02-28	1987-09-03	Canon Kk	Halbleitervorrichtung und herstellungsverfahren hierfuer
JPS6431062A (en) *	1987-07-27	1989-02-01	Ngk Insulators Ltd	Inferior insulator detector
JPS6475977A (en) *	1987-09-18	1989-03-22	Ngk Insulators Ltd	Faulty insulator detector
US5051797A (en) *	1989-09-05	1991-09-24	Eastman Kodak Company	Charge-coupled device (CCD) imager and method of operation
JP3356816B2 (ja) *	1992-03-24	2002-12-16	セイコーインスツルメンツ株式会社	半導体光電気変換装置
USRE42918E1 (en)	1994-01-28	2011-11-15	California Institute Of Technology	Single substrate camera device with CMOS image sensor
US6021172A (en)	1994-01-28	2000-02-01	California Institute Of Technology	Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter
US6486503B1 (en)	1994-01-28	2002-11-26	California Institute Of Technology	Active pixel sensor array with electronic shuttering
US5471515A (en) *	1994-01-28	1995-11-28	California Institute Of Technology	Active pixel sensor with intra-pixel charge transfer
US6456326B2 (en)	1994-01-28	2002-09-24	California Institute Of Technology	Single chip camera device having double sampling operation
US5563429A (en) *	1994-06-14	1996-10-08	Nikon Corp.	Solid state imaging device
US5576763A (en) *	1994-11-22	1996-11-19	Lucent Technologies Inc.	Single-polysilicon CMOS active pixel
AU1835397A (en) *	1996-01-22	1997-08-22	California Institute Of Technology	Active pixel sensor array with multiresolution readout
US5942775A (en) *	1997-04-30	1999-08-24	Lucent Technologies Inc.	Photosensing device with improved spectral response and low thermal leakage
US6353240B2 (en) *	1999-06-02	2002-03-05	United Microelectronics Corp.	CMOS sensor with shallow and deep regions
US6376868B1 (en) *	1999-06-15	2002-04-23	Micron Technology, Inc.	Multi-layered gate for a CMOS imager
CA2350416A1 (en) *	2000-12-20	2002-06-20	Symagery Microsystems Inc.	Image sensor with correlated double sampling technique using switched-capacitor technology
CA2351025A1 (en) *	2001-06-19	2002-12-19	Symagery Microsystems Inc.	Method and apparatus for controlling power consumption in an active pixel sensor array

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3883437A (en) *	1974-01-25	1975-05-13	Hughes Aircraft Co	Monolithic IR detector arrays with direct injection charge coupled device readout
NL180157C (nl) *	1975-06-09	1987-01-02	Philips Nv	Halfgeleider beeldopneeminrichting.

1976
- 1976-10-06 JP JP11934776A patent/JPS5345119A/ja active Granted
1977
- 1977-09-29 GB GB40588/77A patent/GB1531180A/en not_active Expired
- 1977-09-29 US US05/837,709 patent/US4155094A/en not_active Expired - Lifetime
- 1977-10-06 FR FR7730050A patent/FR2367353A1/fr active Granted
- 1977-10-06 NL NLAANVRAGE7711000,A patent/NL179775C/nl not_active IP Right Cessation
- 1977-10-06 DE DE2745046A patent/DE2745046C3/de not_active Expired

Also Published As

Publication number	Publication date
GB1531180A (en)	1978-11-01
FR2367353B1 (nl)	1982-02-26
FR2367353A1 (fr)	1978-05-05
NL7711000A (nl)	1978-04-10
JPS5714063B2 (nl)	1982-03-20
DE2745046A1 (de)	1978-04-20
US4155094A (en)	1979-05-15
NL179775B (nl)	1986-06-02
DE2745046C3 (de)	1981-01-29
JPS5345119A (en)	1978-04-22
DE2745046B2 (de)	1980-05-29

Publication	Publication Date	Title
NL179775C (nl)	1986-11-03	Halfgeleiderbeeldopneeminrichting.
NL7706893A (nl)	1978-01-03	Afbeeldingsinrichting.
NL7701374A (nl)	1977-08-16	Koelinrichting.
NL180157C (nl)	1987-01-02	Halfgeleider beeldopneeminrichting.
NL7703967A (nl)	1977-10-17	Halfgeleiderinrichting.
SE7709224L (sv)	1978-02-20	Avbildningsanordning
NL7705809A (nl)	1977-12-06	Vaste-fase-afbeeldingsinrichting.
NL177956C (nl)	1985-12-16	Fotokoppelinrichting.
NL173572C (nl)	1984-02-01	Halfgeleiderinrichting.
NL7714380A (nl)	1978-07-04	Electrocalorische koelinrichting.
NL7709514A (nl)	1978-03-15	Drijvende inrichting.
NL7703297A (nl)	1977-10-04	Ladingsgekoppelde inrichting.
NL7614627A (nl)	1977-07-05	Videobandregistratieinrichting.
NL7900496A (nl)	1979-07-25	Beeldopneeminrichting.
NL187780C (nl)	1992-01-02	Fotogevoelige inrichting.
NL192861B (nl)	1997-11-03	Videobandapparaat.
NL192715B (nl)	1997-08-01	Videobandapparaat.
NL7811038A (nl)	1979-05-09	Beeldopneeminrichting.
NL7703476A (nl)	1977-10-04	Tril-afsluit-inrichting.
NL7703387A (nl)	1978-01-04	Ultrasone beeldinrichting.
NL7713078A (nl)	1978-06-06	Halfgeleiderinrichting.
NL184661C (nl)	1989-10-02	Computer-tomografische inrichting.
NL7701949A (nl)	1977-08-29	Trek-ontlast-inrichting.
NL7705182A (nl)	1977-11-14	Biopsie-inrichting.
NL189225C (nl)	1993-02-01	Beeldopneeminrichting.

Legal Events

Date	Code	Title	Description
1980-10-27	BC	A request for examination has been filed
1985-01-01	A85	Still pending on 85-01-01
1997-12-01	V4	Discontinued because of reaching the maximum lifetime of a patent	Free format text: 971006