NL175474C - MEMORY CELL. - Google Patents

MEMORY CELL.

Info

Publication number: NL175474C
Authority: NL; Netherlands
Prior art keywords: memory cell; cell; memory
Prior art date: 1970-02-17

Application number

NLAANVRAGE7102040,A

Other languages

Dutch (nl)

Other versions

NL7102040A (en

NL175474B (en

Original Assignee

Western Electric Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1970-02-17

Filing date

1971-02-16

Publication date

1984-11-01

1971-02-16 Application filed by Western Electric Co filed Critical Western Electric Co

1971-08-19 Publication of NL7102040A publication Critical patent/NL7102040A/xx

1984-06-01 Publication of NL175474B publication Critical patent/NL175474B/en

1984-11-01 Application granted granted Critical

1984-11-01 Publication of NL175474C publication Critical patent/NL175474C/en

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/415—Address circuits
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/416—Read-write [R-W] circuits
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/012—Modifications of generator to improve response time or to decrease power consumption
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/013—Modifications of generator to prevent operation by noise or interference
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/10—SRAM devices comprising bipolar components

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Static Random-Access Memory (AREA)

NLAANVRAGE7102040,A 1970-02-17 1971-02-16 MEMORY CELL. NL175474C (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US1208470A	1970-02-17	1970-02-17

Publications (3)

Publication Number	Publication Date
NL7102040A NL7102040A (en)	1971-08-19
NL175474B NL175474B (en)	1984-06-01
NL175474C true NL175474C (en)	1984-11-01

Family

ID=21753318

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NLAANVRAGE7102040,A NL175474C (en)	1970-02-17	1971-02-16	MEMORY CELL.

Country Status (8)

Country	Link
JP (1)	JPS5245172B1 (en)
BE (1)	BE763002A (en)
DE (1)	DE2107280A1 (en)
FR (1)	FR2091964B1 (en)
GB (1)	GB1340536A (en)
HK (1)	HK38577A (en)
NL (1)	NL175474C (en)
SE (1)	SE374973B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
SE9002558D0 (en) *	1990-08-02	1990-08-02	Carlstedt Elektronik Ab	PROCESSOR

1971
- 1971-02-09 SE SE7101582A patent/SE374973B/xx unknown
- 1971-02-16 NL NLAANVRAGE7102040,A patent/NL175474C/en not_active IP Right Cessation
- 1971-02-16 FR FR7105250A patent/FR2091964B1/fr not_active Expired
- 1971-02-16 BE BE763002A patent/BE763002A/en not_active IP Right Cessation
- 1971-02-16 DE DE19712107280 patent/DE2107280A1/en active Pending
- 1971-02-17 JP JP46006862A patent/JPS5245172B1/ja active Pending
- 1971-04-19 GB GB2183471A patent/GB1340536A/en not_active Expired
1977
- 1977-07-21 HK HK385/77A patent/HK38577A/en unknown

Also Published As

Publication number	Publication date
SE374973B (en)	1975-03-24
DE2107280A1 (en)	1971-09-16
NL7102040A (en)	1971-08-19
FR2091964A1 (en)	1972-01-21
FR2091964B1 (en)	1974-03-22
JPS5245172B1 (en)	1977-11-14
BE763002A (en)	1971-07-16
HK38577A (en)	1977-07-29
GB1340536A (en)	1973-12-12
NL175474B (en)	1984-06-01

Publication	Publication Date	Title
DK132357B (en)	1975-11-24	Binary storage cell.
NL175766C (en)	1984-12-17	INTEGRATED MEMORY CELL.
CH546997A (en)	1974-03-15	MEMORY ARRANGEMENT.
NL170969C (en)	1983-01-17	ELECTROLYSIS CELL.
NL179425C (en)	1986-09-01	MONOLITIC MEMORY.
AT314229B (en)	1974-03-25	Read-only memory
NL170472C (en)	1982-11-01	SLIDE REGISTER MEMORY.
DK129884B (en)	1974-11-25	Gas-tight accumulator.
AR203076A1 (en)	1975-08-14	NON-VOLATILE MEMORY CELL
NL178368C (en)	1986-03-03	SEMICONDUCTOR MEMORY.
CH518610A (en)	1972-01-31	Associative memory cell
NL170070C (en)	1982-09-16	FUEL CELL.
AT314228B (en)	1974-03-25	Read-only memory
CH527432A (en)	1972-08-31	Helogram memory
DK129766B (en)	1974-11-18	Salvebase.
DD87699A5 (en)	1972-02-05	STORAGE UNIT.
NL162516C (en)	1980-05-16	LEAD ACCUMULATOR CELL.
CH546584A (en)	1974-03-15	SKIBOB.
NL175474C (en)	1984-11-01	MEMORY CELL.
DK131442B (en)	1975-07-14	Lead accumulator cell.
NL162606C (en)	1980-06-16	STORAGE DEVICE.
DK124723B (en)	1972-11-20	Read.
NL170473C (en)	1982-11-01	CARRYING CONSTRUCTION.
CH549227A (en)	1974-05-15	PHOTOCOPYER.
BE756275A (en)	1971-03-01	BIGOUDI.

Legal Events

Date	Code	Title	Description
1985-10-16	V1	Lapsed because of non-payment of the annual fee