NL151560B - Werkwijze voor het vervaardigen van een halfgeleiderinrichting voorzien van een isolerende glaslaag en halfgeleiderinrichting vervaardigd volgens de werkwijze. - Google Patents
Werkwijze voor het vervaardigen van een halfgeleiderinrichting voorzien van een isolerende glaslaag en halfgeleiderinrichting vervaardigd volgens de werkwijze.Info
- Publication number
- NL151560B NL151560B NL707014024A NL7014024A NL151560B NL 151560 B NL151560 B NL 151560B NL 707014024 A NL707014024 A NL 707014024A NL 7014024 A NL7014024 A NL 7014024A NL 151560 B NL151560 B NL 151560B
- Authority
- NL
- Netherlands
- Prior art keywords
- semi
- conductor device
- procedure
- manufacture
- glass layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/133—Reflow oxides and glasses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24851—Intermediate layer is discontinuous or differential
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US484170A | 1970-01-22 | 1970-01-22 | |
US00292510A US3825442A (en) | 1970-01-22 | 1972-09-27 | Method of a semiconductor device wherein film cracking is prevented by formation of a glass layer |
Publications (2)
Publication Number | Publication Date |
---|---|
NL7014024A NL7014024A (nl) | 1971-07-26 |
NL151560B true NL151560B (nl) | 1976-11-15 |
Family
ID=26673563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL707014024A NL151560B (nl) | 1970-01-22 | 1970-09-23 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting voorzien van een isolerende glaslaag en halfgeleiderinrichting vervaardigd volgens de werkwijze. |
Country Status (5)
Country | Link |
---|---|
US (1) | US3825442A (nl) |
DE (1) | DE2040180B2 (nl) |
FR (1) | FR2077260B1 (nl) |
GB (1) | GB1326947A (nl) |
NL (1) | NL151560B (nl) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3833919A (en) * | 1972-10-12 | 1974-09-03 | Ncr | Multilevel conductor structure and method |
US3986903A (en) * | 1974-03-13 | 1976-10-19 | Intel Corporation | Mosfet transistor and method of fabrication |
US4030952A (en) * | 1974-04-18 | 1977-06-21 | Fairchild Camera And Instrument Corporation | Method of MOS circuit fabrication |
US3887733A (en) * | 1974-04-24 | 1975-06-03 | Motorola Inc | Doped oxide reflow process |
US3912558A (en) * | 1974-05-03 | 1975-10-14 | Fairchild Camera Instr Co | Method of MOS circuit fabrication |
DE2445594A1 (de) * | 1974-09-24 | 1976-04-08 | Siemens Ag | Verfahren zur herstellung integrierter schaltungen |
JPS5142480A (en) * | 1974-10-08 | 1976-04-10 | Nippon Electric Co | Handotaisochino seizohoho |
GB1504484A (en) * | 1975-08-13 | 1978-03-22 | Tokyo Shibaura Electric Co | Semiconductor device and a method for manufacturing the same |
DE2634095C2 (de) * | 1976-07-29 | 1982-11-04 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur Abflachung und Einebnung von Stufen auf der Oberfläche einer integrierte Schaltungen aufweisenden Halbleiterscheibe |
IT1089299B (it) | 1977-01-26 | 1985-06-18 | Mostek Corp | Procedimento per fabbricare un dispositivo semiconduttore |
US4183135A (en) * | 1977-08-29 | 1980-01-15 | Motorola, Inc. | Hermetic glass encapsulation for semiconductor die and method |
JPS5492175A (en) * | 1977-12-29 | 1979-07-21 | Fujitsu Ltd | Manufacture of semiconductor device |
US4214917A (en) * | 1978-02-10 | 1980-07-29 | Emm Semi | Process of forming a semiconductor memory cell with continuous polysilicon run circuit elements |
US4191603A (en) * | 1978-05-01 | 1980-03-04 | International Business Machines Corporation | Making semiconductor structure with improved phosphosilicate glass isolation |
US4251571A (en) * | 1978-05-02 | 1981-02-17 | International Business Machines Corporation | Method for forming semiconductor structure with improved isolation between two layers of polycrystalline silicon |
JPS54147789A (en) * | 1978-05-11 | 1979-11-19 | Matsushita Electric Ind Co Ltd | Semiconductor divice and its manufacture |
US4668973A (en) * | 1978-06-19 | 1987-05-26 | Rca Corporation | Semiconductor device passivated with phosphosilicate glass over silicon nitride |
USRE32351E (en) * | 1978-06-19 | 1987-02-17 | Rca Corporation | Method of manufacturing a passivating composite comprising a silicon nitride (SI1 3N4) layer and a phosphosilicate glass (PSG) layer for a semiconductor device layer |
JPS5534444A (en) * | 1978-08-31 | 1980-03-11 | Fujitsu Ltd | Preparation of semiconductor device |
US4206254A (en) * | 1979-02-28 | 1980-06-03 | International Business Machines Corporation | Method of selectively depositing metal on a ceramic substrate with a metallurgy pattern |
US4355454A (en) * | 1979-09-05 | 1982-10-26 | Texas Instruments Incorporated | Coating device with As2 -O3 -SiO2 |
DE2937993A1 (de) * | 1979-09-20 | 1981-04-02 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von integrierten mos-halbleiterschaltungen nach der silizium-gate-technologie |
JPS5669835A (en) * | 1979-11-09 | 1981-06-11 | Japan Electronic Ind Dev Assoc<Jeida> | Method for forming thin film pattern |
US4542037A (en) * | 1980-04-28 | 1985-09-17 | Fairchild Camera And Instrument Corporation | Laser induced flow of glass bonded materials |
CA1174285A (en) * | 1980-04-28 | 1984-09-11 | Michelangelo Delfino | Laser induced flow of integrated circuit structure materials |
US4284659A (en) * | 1980-05-12 | 1981-08-18 | Bell Telephone Laboratories | Insulation layer reflow |
JPS57126147A (en) * | 1981-01-28 | 1982-08-05 | Fujitsu Ltd | Manufacture of semiconductor device |
US4455325A (en) * | 1981-03-16 | 1984-06-19 | Fairchild Camera And Instrument Corporation | Method of inducing flow or densification of phosphosilicate glass for integrated circuits |
US4492717A (en) * | 1981-07-27 | 1985-01-08 | International Business Machines Corporation | Method for forming a planarized integrated circuit |
DE3130666A1 (de) * | 1981-08-03 | 1983-02-17 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen integrieter mos-feldeffekttransistoren mit einer phosphorsilikatglasschicht als zwischenoxidschicht |
DE3131050A1 (de) * | 1981-08-05 | 1983-02-24 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von integrierten mos-feldeffekttransistoren unter verwendung einer aus phosphorsilikatglas bestehenden obewrflaechenschicht auf dem zwischenoxid zwischen polysiliziumebene und metall-leiterbahnebene |
DE3133516A1 (de) * | 1981-08-25 | 1983-03-17 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum verrunden des zwischenoxids zwischen polysiliziumebene und metall-leiterbahnebene beim herstellen von integrierten n-kanal-mos-feldeffekttransistoren |
JPS58101442A (ja) * | 1981-12-11 | 1983-06-16 | Hitachi Ltd | 電気的装置用基板 |
US4476621A (en) * | 1983-02-01 | 1984-10-16 | Gte Communications Products Corporation | Process for making transistors with doped oxide densification |
US4496608A (en) * | 1984-03-02 | 1985-01-29 | Xerox Corporation | P-Glass reflow technique |
US4663414A (en) * | 1985-05-14 | 1987-05-05 | Stauffer Chemical Company | Phospho-boro-silanol interlayer dielectric films and preparation |
US4847667A (en) * | 1987-02-27 | 1989-07-11 | Kabushiki Kaisha Toshiba | Ultraviolet erasable nonvolatile semiconductor memory device |
US4784973A (en) * | 1987-08-24 | 1988-11-15 | Inmos Corporation | Semiconductor contact silicide/nitride process with control for silicide thickness |
US4948743A (en) * | 1988-06-29 | 1990-08-14 | Matsushita Electronics Corporation | Method of manufacturing a semiconductor device |
EP0388075B1 (en) * | 1989-03-16 | 1996-11-06 | STMicroelectronics, Inc. | Contacts for semiconductor devices |
JP2556138B2 (ja) * | 1989-06-30 | 1996-11-20 | 日本電気株式会社 | 半導体装置の製造方法 |
JP3128811B2 (ja) * | 1990-08-07 | 2001-01-29 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
EP0933821B1 (en) * | 1994-03-03 | 2003-04-23 | Rohm Corporation | Low voltage one transistor flash eeprom cell using fowler-nordheim programming and erase |
US5419787A (en) * | 1994-06-24 | 1995-05-30 | The United States Of America As Represented By The Secretary Of The Air Force | Stress reduced insulator |
US5738931A (en) * | 1994-09-16 | 1998-04-14 | Kabushiki Kaisha Toshiba | Electronic device and magnetic device |
US6087733A (en) * | 1998-06-12 | 2000-07-11 | Intel Corporation | Sacrificial erosion control features for chemical-mechanical polishing process |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3383568A (en) * | 1965-02-04 | 1968-05-14 | Texas Instruments Inc | Semiconductor device utilizing glass and oxides as an insulator for hermetically sealing the junctions |
US3475234A (en) * | 1967-03-27 | 1969-10-28 | Bell Telephone Labor Inc | Method for making mis structures |
US3615941A (en) * | 1968-05-07 | 1971-10-26 | Hitachi Ltd | Method for manufacturing semiconductor device with passivation film |
-
1970
- 1970-08-13 DE DE19702040180 patent/DE2040180B2/de not_active Withdrawn
- 1970-08-14 GB GB3933570A patent/GB1326947A/en not_active Expired
- 1970-08-24 FR FR7030952A patent/FR2077260B1/fr not_active Expired
- 1970-09-23 NL NL707014024A patent/NL151560B/nl unknown
-
1972
- 1972-09-27 US US00292510A patent/US3825442A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US3825442A (en) | 1974-07-23 |
DE2040180B2 (de) | 1977-08-25 |
DE2040180A1 (de) | 1971-07-29 |
GB1326947A (en) | 1973-08-15 |
FR2077260B1 (nl) | 1976-07-23 |
NL7014024A (nl) | 1971-07-26 |
FR2077260A1 (nl) | 1971-10-22 |
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