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NL1012430A1 - A method of manufacturing semiconductor units, an etching composition for manufacturing semiconductor units, and semiconductor units obtained therewith. - Google Patents

A method of manufacturing semiconductor units, an etching composition for manufacturing semiconductor units, and semiconductor units obtained therewith.

Info

Publication number
NL1012430A1
NL1012430A1 NL1012430A NL1012430A NL1012430A1 NL 1012430 A1 NL1012430 A1 NL 1012430A1 NL 1012430 A NL1012430 A NL 1012430A NL 1012430 A NL1012430 A NL 1012430A NL 1012430 A1 NL1012430 A1 NL 1012430A1
Authority
NL
Netherlands
Prior art keywords
semiconductor units
manufacturing semiconductor
etching composition
obtained therewith
manufacturing
Prior art date
Application number
NL1012430A
Other languages
Dutch (nl)
Other versions
NL1012430C2 (en
Inventor
Gyu-Hwan Kwag
Se-Jong Ko
Kyung-Seuk Hwang
Jun-Ing Gil
Sang-O Park
Dae-Hoon Kim
Sang-Moon Chun
Ho-Gyun Jung
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of NL1012430A1 publication Critical patent/NL1012430A1/en
Application granted granted Critical
Publication of NL1012430C2 publication Critical patent/NL1012430C2/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
NL1012430A 1998-06-25 1999-06-24 Method for manufacturing semiconductor units, an etching composition for manufacturing semiconductor units, and semiconductor units obtained thereby. NL1012430C2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR19980024232 1998-06-25
KR19980024232 1998-06-25
KR19980031544 1998-08-03
KR1019980031544A KR100271769B1 (en) 1998-06-25 1998-08-03 Method for manufacturing semiconductor device, etchant composition and semiconductor device for manufacturing semiconductor device therefor

Publications (2)

Publication Number Publication Date
NL1012430A1 true NL1012430A1 (en) 2000-01-04
NL1012430C2 NL1012430C2 (en) 2004-10-13

Family

ID=26633814

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1012430A NL1012430C2 (en) 1998-06-25 1999-06-24 Method for manufacturing semiconductor units, an etching composition for manufacturing semiconductor units, and semiconductor units obtained thereby.

Country Status (5)

Country Link
JP (3) JP4180741B2 (en)
KR (1) KR100271769B1 (en)
DE (1) DE19928570B4 (en)
NL (1) NL1012430C2 (en)
TW (1) TW478130B (en)

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JP4240424B2 (en) 1998-10-23 2009-03-18 エルジー ディスプレイ カンパニー リミテッド Etching agent and method for manufacturing substrate for electronic device using the same
US20010054706A1 (en) * 1999-07-19 2001-12-27 Joseph A. Levert Compositions and processes for spin etch planarization
KR100641950B1 (en) * 2000-06-27 2006-11-02 주식회사 하이닉스반도체 Method of forming contact plug of semiconductor device
JP2002043201A (en) * 2000-07-28 2002-02-08 Mitsubishi Electric Corp Method of manufacturing semiconductor device and semiconductor device
KR100372647B1 (en) * 2000-10-13 2003-02-19 주식회사 하이닉스반도체 Method for forming damascene metal gate
AU2001296420A1 (en) * 2000-11-28 2002-06-11 Lightcross, Inc Formation of a smooth surface on an optical component
JP3609761B2 (en) 2001-07-19 2005-01-12 三洋電機株式会社 Manufacturing method of semiconductor device
KR100881388B1 (en) * 2002-11-04 2009-02-05 주식회사 하이닉스반도체 Manufacturing Method of Semiconductor Device
KR100536593B1 (en) * 2002-12-05 2005-12-14 삼성전자주식회사 Cleaning solution for selectively removing a layer and method for selectively removing the layer in silicide process using the cleaning solution
JP4355201B2 (en) * 2003-12-02 2009-10-28 関東化学株式会社 Tungsten metal removing liquid and tungsten metal removing method using the same
US7351642B2 (en) * 2005-01-14 2008-04-01 Infineon Technologies Richmond, Lp Deglaze route to compensate for film non-uniformities after STI oxide processing
KR100624089B1 (en) 2005-07-12 2006-09-15 삼성전자주식회사 Pattern forming method, manufacturing method of multi-gate oxide film and flash memory cell using same
KR101264421B1 (en) 2005-12-09 2013-05-14 동우 화인켐 주식회사 Etchant for metal layer
JP4974904B2 (en) * 2006-01-31 2012-07-11 株式会社Ｓｕｍｃｏ Single wafer etching method of wafer
JP4906417B2 (en) 2006-07-11 2012-03-28 ラピスセミコンダクタ株式会社 Manufacturing method of semiconductor device
KR100860367B1 (en) 2006-08-21 2008-09-25 제일모직주식회사 Etch solution with improved etching selectivity relative to silicon oxide film compared to metal silicide film
JP5017709B2 (en) 2006-09-07 2012-09-05 ジルトロニック アクチエンゲゼルシャフト Silicon wafer etching method and semiconductor silicon wafer manufacturing method
US8623236B2 (en) 2007-07-13 2014-01-07 Tokyo Ohka Kogyo Co., Ltd. Titanium nitride-stripping liquid, and method for stripping titanium nitride coating film
JP5047881B2 (en) * 2007-07-13 2012-10-10 東京応化工業株式会社 Titanium nitride stripping solution and method for stripping titanium nitride coating
JP5439466B2 (en) * 2011-12-26 2014-03-12 富士フイルム株式会社 Silicon etching method, silicon etching solution used therefor, and kit thereof
WO2013099955A1 (en) * 2011-12-27 2013-07-04 富士フイルム株式会社 Method for producing semiconductor substrate product and etching method utilized therein
JP2014146623A (en) * 2013-01-25 2014-08-14 Fujifilm Corp Method of etching semiconductor substrate, etchant, and method of manufacturing semiconductor element
JP6454605B2 (en) * 2015-06-01 2019-01-16 東芝メモリ株式会社 Substrate processing method and substrate processing apparatus
JP6917807B2 (en) * 2017-07-03 2021-08-11 東京エレクトロン株式会社 Substrate processing method
JP7398969B2 (en) * 2019-03-01 2023-12-15 東京エレクトロン株式会社 Substrate processing method, substrate processing apparatus and storage medium

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US4345969A (en) * 1981-03-23 1982-08-24 Motorola, Inc. Metal etch solution and method
US4415606A (en) * 1983-01-10 1983-11-15 Ncr Corporation Method of reworking upper metal in multilayer metal integrated circuits
US4806504A (en) * 1986-09-11 1989-02-21 Fairchild Semiconductor Corporation Planarization method
GB2212979A (en) * 1987-12-02 1989-08-02 Philips Nv Fabricating electrical connections,particularly in integrated circuit manufacture
US4804438A (en) * 1988-02-08 1989-02-14 Eastman Kodak Company Method of providing a pattern of conductive platinum silicide
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US5486234A (en) * 1993-07-16 1996-01-23 The United States Of America As Represented By The United States Department Of Energy Removal of field and embedded metal by spin spray etching
US5340437A (en) * 1993-10-08 1994-08-23 Memc Electronic Materials, Inc. Process and apparatus for etching semiconductor wafers
KR950019922A (en) * 1993-12-28 1995-07-24 김주용 Polycrystalline Silicon Wet Etch Solution
US5449639A (en) * 1994-10-24 1995-09-12 Taiwan Semiconductor Manufacturing Company Ltd. Disposable metal anti-reflection coating process used together with metal dry/wet etch
JP3459137B2 (en) * 1995-04-06 2003-10-20 日曹エンジニアリング株式会社 Single wafer spin etching method
US5863828A (en) * 1996-09-25 1999-01-26 National Semiconductor Corporation Trench planarization technique
KR100205321B1 (en) * 1996-12-30 1999-07-01 구본준 Method for manufacturing a semiconductor device having a crack prevention pattern

Also Published As

Publication number Publication date
TW478130B (en) 2002-03-01
JP4180741B2 (en) 2008-11-12
JP4343084B2 (en) 2009-10-14
NL1012430C2 (en) 2004-10-13
KR100271769B1 (en) 2001-02-01
JP2005057304A (en) 2005-03-03
DE19928570B4 (en) 2008-04-10
JP2000031114A (en) 2000-01-28
KR20000004840A (en) 2000-01-25
DE19928570A1 (en) 1999-12-30
JP2005045285A (en) 2005-02-17

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AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)
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V1 Lapsed because of non-payment of the annual fee

Effective date: 20140101