MY6900304A - A method of diffusing a conductivity affective inpurity into a semiconductor compound - Google Patents

A method of diffusing a conductivity affective inpurity into a semiconductor compound

Info

Publication number: MY6900304A
Authority: MY; Malaysia
Prior art keywords: inpurity; affective; diffusing; conductivity; semiconductor compound
Prior art date: 1960-05-02

Application number

MY1969304A

Other languages

English (en)

Original Assignee

Texas Instruments Incorp.

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1960-05-02

Filing date

1969-12-31

Publication date

1969-12-31

1969-12-31 Application filed by Texas Instruments Incorp. filed Critical Texas Instruments Incorp.

1969-12-31 Publication of MY6900304A publication Critical patent/MY6900304A/xx

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
- C30B31/165—Diffusion sources
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
- Y10S252/951—Doping agent source material for vapor transport
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/909—Controlled atmosphere

Landscapes

Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Manufacture And Refinement Of Metals (AREA)
Led Devices (AREA)

MY1969304A 1960-05-02 1969-12-31 A method of diffusing a conductivity affective inpurity into a semiconductor compound MY6900304A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US25869A US3154446A (en)	1960-05-02	1960-05-02	Method of forming junctions

Publications (1)

Publication Number	Publication Date
MY6900304A true MY6900304A (en)	1969-12-31

Family

ID=21828494

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
MY1969304A MY6900304A (en)	1960-05-02	1969-12-31	A method of diffusing a conductivity affective inpurity into a semiconductor compound

Country Status (6)

Country	Link
US (1)	US3154446A (xx)
BE (1)	BE603265A (xx)
CH (1)	CH402550A (xx)
GB (1)	GB979554A (xx)
MY (1)	MY6900304A (xx)
NL (2)	NL125226C (xx)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3215571A (en) *	1962-10-01	1965-11-02	Bell Telephone Labor Inc	Fabrication of semiconductor bodies
US3275557A (en) *	1963-11-13	1966-09-27	Philips Corp	Method of making mercury-doped germanium semiconductor crystals
FR1489613A (xx) *	1965-08-19	1967-11-13
US3473980A (en) *	1966-10-11	1969-10-21	Bell Telephone Labor Inc	Significant impurity sources for solid state diffusion
US3544854A (en) *	1966-12-02	1970-12-01	Texas Instruments Inc	Ohmic contacts for gallium arsenide semiconductors
FR2178751B1 (xx) *	1972-04-05	1974-10-18	Radiotechnique Compelec

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2854363A (en) *	1953-04-02	1958-09-30	Int Standard Electric Corp	Method of producing semiconductor crystals containing p-n junctions
BE531626A (xx) *	1953-09-04
US2847335A (en) *	1953-09-15	1958-08-12	Siemens Ag	Semiconductor devices and method of manufacturing them
US2928761A (en) *	1954-07-01	1960-03-15	Siemens Ag	Methods of producing junction-type semi-conductor devices
NL218192A (xx) *	1956-06-18
US2870049A (en) *	1956-07-16	1959-01-20	Rca Corp	Semiconductor devices and method of making same
US2900286A (en) *	1957-11-19	1959-08-18	Rca Corp	Method of manufacturing semiconductive bodies
NL245567A (xx) *	1958-11-20

0
- NL NL264273D patent/NL264273A/xx unknown
- NL NL125226D patent/NL125226C/xx active
1960
- 1960-05-02 US US25869A patent/US3154446A/en not_active Expired - Lifetime
1961
- 1961-05-01 GB GB15721/61A patent/GB979554A/en not_active Expired
- 1961-05-02 CH CH511261A patent/CH402550A/fr unknown
- 1961-05-02 BE BE603265A patent/BE603265A/fr unknown
1969
- 1969-12-31 MY MY1969304A patent/MY6900304A/xx unknown

Also Published As

Publication number	Publication date
NL264273A (xx)
GB979554A (en)	1965-01-06
US3154446A (en)	1964-10-27
CH402550A (fr)	1965-11-15
BE603265A (fr)	1961-11-03
NL125226C (xx)

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