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MY6900245A - Epitaxial process and apparatus for semiconductors - Google Patents

Epitaxial process and apparatus for semiconductors

Info

Publication number
MY6900245A
MY6900245A MY6900245A MY6900245A MY6900245A MY 6900245 A MY6900245 A MY 6900245A MY 6900245 A MY6900245 A MY 6900245A MY 6900245 A MY6900245 A MY 6900245A MY 6900245 A MY6900245 A MY 6900245A
Authority
MY
Malaysia
Prior art keywords
semiconductors
epitaxial process
epitaxial
Prior art date
Application number
MY6900245A
Original Assignee
Texas Instruments Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Incorporated filed Critical Texas Instruments Incorporated
Publication of MY6900245A publication Critical patent/MY6900245A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
MY6900245A 1962-11-13 1969-12-31 Epitaxial process and apparatus for semiconductors MY6900245A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23716162A 1962-11-13 1962-11-13

Publications (1)

Publication Number Publication Date
MY6900245A true MY6900245A (en) 1969-12-31

Family

ID=22892572

Family Applications (1)

Application Number Title Priority Date Filing Date
MY6900245A MY6900245A (en) 1962-11-13 1969-12-31 Epitaxial process and apparatus for semiconductors

Country Status (2)

Country Link
GB (1) GB1056430A (en)
MY (1) MY6900245A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8602357A (en) * 1985-10-07 1987-05-04 Epsilon Ltd Partnership APPARATUS AND METHOD FOR THE CHEMICAL VAPOR DISPOSAL USING AN AXIAL SYMMETRICAL GAS FLOW.
NL8602356A (en) * 1985-10-07 1987-05-04 Epsilon Ltd Partnership APPARATUS AND METHOD FOR AN AXIAL SYMMETRICAL REACTOR FOR THE CHEMICAL VAPORIZATION.
JPH02222134A (en) * 1989-02-23 1990-09-04 Nobuo Mikoshiba Thin film forming apparatus
DE69810969T2 (en) * 1998-02-24 2003-08-07 Aixtron Ag ARRANGEMENT FOR THE TOP WALL OF A REACTOR FOR EPITAXIC GROWTH
EP1322801B1 (en) 2000-09-22 2010-01-06 Aixtron Ag Cvd-method and gas inlet mechanism for carrying out the method
DE10064941A1 (en) 2000-09-22 2002-04-11 Aixtron Ag Gas inlet element

Also Published As

Publication number Publication date
GB1056430A (en) 1967-01-25

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