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MX2019001417A - Celula solar con emisor pasivado y contacto posterior. - Google Patents

Celula solar con emisor pasivado y contacto posterior.

Info

Publication number
MX2019001417A
MX2019001417A MX2019001417A MX2019001417A MX2019001417A MX 2019001417 A MX2019001417 A MX 2019001417A MX 2019001417 A MX2019001417 A MX 2019001417A MX 2019001417 A MX2019001417 A MX 2019001417A MX 2019001417 A MX2019001417 A MX 2019001417A
Authority
MX
Mexico
Prior art keywords
solar cell
layer
rear contact
contact solar
passivated emitter
Prior art date
Application number
MX2019001417A
Other languages
English (en)
Inventor
Anker John
Eugène Bende Evert
Johan Geerligs Lambert
Krzyszto Stodolny Maciej
Original Assignee
Tno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tno filed Critical Tno
Publication of MX2019001417A publication Critical patent/MX2019001417A/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/023—Alloys based on aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/148—Double-emitter photovoltaic cells, e.g. bifacial photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H10F77/223—Arrangements for electrodes of back-contact photovoltaic cells for metallisation wrap-through [MWT] photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)

Abstract

Célula solar y procedimiento de fabricación de una célula solar. La célula solar tiene un sustrato de silicio (2) y una capa (4) dispuesta en una cara de sustrato (2a) del sustrato de silicio (2). Además, está provista de una estructura de contacto (6) que se extiende a través de la capa (4) desde una cara de célula (1a) de la célula solar (1) hasta el sustrato de silicio (2). La capa (4) está conformada por una capa de silicio policristalino (8) y una capa de óxido con efecto túnel (10) interpuesta entre la capa de silicio policristalino (8) y el sustrato de silicio (2).
MX2019001417A 2016-08-04 2017-08-03 Celula solar con emisor pasivado y contacto posterior. MX2019001417A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL2017290A NL2017290B1 (en) 2016-08-04 2016-08-04 Passivated Emitter and Rear Contact Solar Cell
PCT/NL2017/050518 WO2018026277A1 (en) 2016-08-04 2017-08-03 Passivated emitter and rear contact solar cell

Publications (1)

Publication Number Publication Date
MX2019001417A true MX2019001417A (es) 2019-08-29

Family

ID=57042958

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2019001417A MX2019001417A (es) 2016-08-04 2017-08-03 Celula solar con emisor pasivado y contacto posterior.

Country Status (8)

Country Link
US (1) US11316054B2 (es)
EP (1) EP3494600B1 (es)
CN (1) CN109891600B (es)
AU (1) AU2017306526B2 (es)
MX (1) MX2019001417A (es)
NL (1) NL2017290B1 (es)
TW (1) TWI736658B (es)
WO (1) WO2018026277A1 (es)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4092757A1 (en) 2013-04-03 2022-11-23 Lg Electronics Inc. Method for fabricating a solar cell
KR102219804B1 (ko) 2014-11-04 2021-02-24 엘지전자 주식회사 태양 전지 및 그의 제조 방법
EP3509112B1 (en) 2014-11-28 2020-10-14 LG Electronics Inc. Solar cell and method for manufacturing the same
KR102272433B1 (ko) 2015-06-30 2021-07-05 엘지전자 주식회사 태양 전지 및 이의 제조 방법
CN110148636A (zh) * 2018-11-27 2019-08-20 晶澳（扬州）太阳能科技有限公司 一种太阳能电池及其制备方法、光伏组件
CN111403534B (zh) * 2020-03-27 2022-04-15 晶澳（扬州）太阳能科技有限公司 一种太阳能电池及其制备方法
CN114188424A (zh) * 2020-09-14 2022-03-15 泰州隆基乐叶光伏科技有限公司 太阳电池及生产方法、电池组件
EP4298675A1 (en) 2021-02-26 2024-01-03 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Perc -tandem solar cell with sacrificial layer
CN115241298B (zh) * 2022-02-25 2023-10-31 浙江晶科能源有限公司 太阳能电池及其制备方法、光伏组件
CN218447931U (zh) * 2022-10-19 2023-02-03 天合光能股份有限公司 太阳能电池、太阳能电池组件及太阳能电池制备设备
CN115842062A (zh) * 2022-11-30 2023-03-24 浙江晶科能源有限公司 一种太阳能电池及光伏组件
CN115810688A (zh) * 2022-11-30 2023-03-17 浙江晶科能源有限公司 一种太阳能电池及光伏组件
DE102023135276A1 (de) * 2023-12-15 2025-06-18 Ce Cell Engineering Gmbh Wafersolarzelle mit passivierten Kontakten und Verfahren zur Herstellung einer solchen Wafersolarzelle

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7375378B2 (en) * 2005-05-12 2008-05-20 General Electric Company Surface passivated photovoltaic devices
US7468485B1 (en) * 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
DE602008003218D1 (de) * 2007-05-07 2010-12-09 Georgia Tech Res Inst Herstellung eines hochwertigen rückseitigen kontakts mit lokaler rückseitiger siebdruckfläche
CN101615640B (zh) * 2008-06-27 2011-01-19 上海电机学院 氧化锌基太阳能电池及其制备方法
CN101447528A (zh) * 2008-12-22 2009-06-03 上海晶澳太阳能光伏科技有限公司 一种双面钝化和激光打点制备背点接触晶体硅太阳电池的方法
EP4350784A3 (en) * 2009-04-21 2024-07-10 Tetrasun, Inc. High-efficiency solar cell structures and methods of manufacture
KR101146736B1 (ko) * 2009-09-14 2012-05-17 엘지전자 주식회사 태양 전지
US8334161B2 (en) * 2010-07-02 2012-12-18 Sunpower Corporation Method of fabricating a solar cell with a tunnel dielectric layer
WO2013148047A1 (en) * 2012-03-30 2013-10-03 Applied Materials, Inc. Doped ai paste for local alloyed junction formation with low contact resistance
CN203760486U (zh) * 2014-04-18 2014-08-06 新奥光伏能源有限公司 一种p型晶体硅电池
TWI590473B (zh) * 2014-10-24 2017-07-01 昱晶能源科技股份有限公司 太陽能電池及其製造方法
JPWO2016068237A1 (ja) * 2014-10-29 2017-08-03 京セラ株式会社 太陽電池モジュール
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CN204927300U (zh) * 2015-09-08 2015-12-30 苏州阿特斯阳光电力科技有限公司 一种perc太阳能电池

Also Published As

Publication number Publication date
WO2018026277A8 (en) 2019-03-14
AU2017306526B2 (en) 2022-02-03
EP3494600B1 (en) 2020-06-03
US11316054B2 (en) 2022-04-26
AU2017306526A1 (en) 2019-02-14
US20190172957A1 (en) 2019-06-06
CN109891600B (zh) 2023-03-31
NL2017290B1 (en) 2018-02-14
WO2018026277A1 (en) 2018-02-08
EP3494600A1 (en) 2019-06-12
TW201824571A (zh) 2018-07-01
TWI736658B (zh) 2021-08-21
CN109891600A (zh) 2019-06-14

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