KR980012311A - Epoxy Resin Liquid Composition for Semiconductor Encapsulation - Google Patents
Epoxy Resin Liquid Composition for Semiconductor Encapsulation Download PDFInfo
- Publication number
- KR980012311A KR980012311A KR1019970035857A KR19970035857A KR980012311A KR 980012311 A KR980012311 A KR 980012311A KR 1019970035857 A KR1019970035857 A KR 1019970035857A KR 19970035857 A KR19970035857 A KR 19970035857A KR 980012311 A KR980012311 A KR 980012311A
- Authority
- KR
- South Korea
- Prior art keywords
- epoxy resin
- group
- composition
- semiconductor
- composition according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 73
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 70
- 239000000203 mixture Substances 0.000 title claims abstract description 51
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 239000007788 liquid Substances 0.000 title claims abstract description 37
- 238000005538 encapsulation Methods 0.000 title claims abstract description 15
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 15
- 239000011256 inorganic filler Substances 0.000 claims abstract description 9
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 9
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 7
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 claims description 6
- -1 glycidyloxy group Chemical group 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 6
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- 150000001412 amines Chemical class 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 claims description 3
- 150000008065 acid anhydrides Chemical class 0.000 claims description 2
- 239000004615 ingredient Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000001723 curing Methods 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 6
- 239000008393 encapsulating agent Substances 0.000 description 5
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000011342 resin composition Substances 0.000 description 3
- WADSJYLPJPTMLN-UHFFFAOYSA-N 3-(cycloundecen-1-yl)-1,2-diazacycloundec-2-ene Chemical compound C1CCCCCCCCC=C1C1=NNCCCCCCCC1 WADSJYLPJPTMLN-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- JIYNFFGKZCOPKN-UHFFFAOYSA-N sbb061129 Chemical compound O=C1OC(=O)C2C1C1C=C(C)C2C1 JIYNFFGKZCOPKN-UHFFFAOYSA-N 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- AHDSRXYHVZECER-UHFFFAOYSA-N 2,4,6-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC(CN(C)C)=C(O)C(CN(C)C)=C1 AHDSRXYHVZECER-UHFFFAOYSA-N 0.000 description 1
- WTYYGFLRBWMFRY-UHFFFAOYSA-N 2-[6-(oxiran-2-ylmethoxy)hexoxymethyl]oxirane Chemical compound C1OC1COCCCCCCOCC1CO1 WTYYGFLRBWMFRY-UHFFFAOYSA-N 0.000 description 1
- UUODQIKUTGWMPT-UHFFFAOYSA-N 2-fluoro-5-(trifluoromethyl)pyridine Chemical compound FC1=CC=C(C(F)(F)F)C=N1 UUODQIKUTGWMPT-UHFFFAOYSA-N 0.000 description 1
- OVEUFHOBGCSKSH-UHFFFAOYSA-N 2-methyl-n,n-bis(oxiran-2-ylmethyl)aniline Chemical compound CC1=CC=CC=C1N(CC1OC1)CC1OC1 OVEUFHOBGCSKSH-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- MECNWXGGNCJFQJ-UHFFFAOYSA-N 3-piperidin-1-ylpropane-1,2-diol Chemical compound OCC(O)CN1CCCCC1 MECNWXGGNCJFQJ-UHFFFAOYSA-N 0.000 description 1
- HYYPKCMPDGCDHE-UHFFFAOYSA-N 4-(7-oxabicyclo[4.1.0]heptan-4-ylmethyl)-7-oxabicyclo[4.1.0]heptane Chemical compound C1CC2OC2CC1CC1CC2OC2CC1 HYYPKCMPDGCDHE-UHFFFAOYSA-N 0.000 description 1
- QGMGHALXLXKCBD-UHFFFAOYSA-N 4-amino-n-(2-aminophenyl)benzamide Chemical compound C1=CC(N)=CC=C1C(=O)NC1=CC=CC=C1N QGMGHALXLXKCBD-UHFFFAOYSA-N 0.000 description 1
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 1
- YXALYBMHAYZKAP-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]heptan-4-ylmethyl 7-oxabicyclo[4.1.0]heptane-4-carboxylate Chemical compound C1CC2OC2CC1C(=O)OCC1CC2OC2CC1 YXALYBMHAYZKAP-UHFFFAOYSA-N 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NIYNIOYNNFXGFN-UHFFFAOYSA-N [4-(hydroxymethyl)cyclohexyl]methanol;7-oxabicyclo[4.1.0]heptane-4-carboxylic acid Chemical compound OCC1CCC(CO)CC1.C1C(C(=O)O)CCC2OC21.C1C(C(=O)O)CCC2OC21 NIYNIOYNNFXGFN-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- IDSLNGDJQFVDPQ-UHFFFAOYSA-N bis(7-oxabicyclo[4.1.0]heptan-4-yl) hexanedioate Chemical compound C1CC2OC2CC1OC(=O)CCCCC(=O)OC1CC2OC2CC1 IDSLNGDJQFVDPQ-UHFFFAOYSA-N 0.000 description 1
- 229940106691 bisphenol a Drugs 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000002510 isobutoxy group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])O* 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- KNRCVAANTQNTPT-UHFFFAOYSA-N methyl-5-norbornene-2,3-dicarboxylic anhydride Chemical compound O=C1OC(=O)C2C1C1(C)C=CC2C1 KNRCVAANTQNTPT-UHFFFAOYSA-N 0.000 description 1
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/30—Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen
- C08G59/306—Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen containing silicon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
- C08G59/3254—Epoxy compounds containing three or more epoxy groups containing atoms other than carbon, hydrogen, oxygen or nitrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
Abstract
본 발명은 패키지가 큰 표면적을 가지더라도 뒤틀림에 대한 저항이 큰 반도체 패키지를 제조할 수 있도록 하는 반도체 캡슐화용 에폭시 수지 액상 조성물에 관한 것이다. 보다 상세하게 본 발명은 필수성분으로서 실리콘 개질 에폭시수지 이외의 에폭시 수지(a), 실리콘 개질 에폭시 수지(b), 다가염기 카르복시산계 경화제(c), 무기충전체(d) 및 경화 촉진제를 함유하는 반도체 캡슐화용 에폭시 수지 액상 조성물에 관한 것이다.The present invention relates to an epoxy resin liquid composition for semiconductor encapsulation, which enables the production of a semiconductor package having a large resistance to warping even if the package has a large surface area. More specifically, the present invention contains an epoxy resin (a), a silicone-modified epoxy resin (b), a polybasic carboxylic acid-based curing agent (c), an inorganic filler (d) and a curing accelerator as essential components other than the silicone-modified epoxy resin. An epoxy resin liquid composition for semiconductor encapsulation.
Description
본 발명은 에폭시 수지 액상 조성물 및 그 경화물에 관한 것이다. 특히 본 발명은 플라스틱 보올 그리드 에레이(BGA : ball grid array), 멀티칩 모듈(MCM : multi-moduly) 및 칩 사이즈 패키지(CSP) 등의 반도체 캡슐화제로 사용하기에 적합한 에폭시 수지 액상 조성물 및 그 경화물에 관한 것이다. 논리 LSI를 구성하여 장치를 제조하는데 이제까지 필요로 하였던 한가지 중요한 사항은 멀티핀(multipin) 구조, 즉 다수의 핀이 구성된 구조의 경향에 대한 적합성이다. 멀티핀 구조에 적합한 콰드 플랫 패키지(QFP : quad flat package) 등의 장치에는 여러 가지 기술을 필요로 하고 있다. 예컨대 핀 피치(pin pitch)를 0.3mm이하로 채택함으로써 핀의 수를 증가시킬 수는 있지만 조립시에 소자의 위치가 약간만 어긋나더라도 제품결함의 원인이 되고, 결합품을 합격품으로 하기 위해서는 어긋난 소자를 떼어내서 다시 조립하여 개조하여야만 하였다. 더욱이 핀의 수가 증가함에 따라 패키지 사이즈도 증대하고, 결과적으로 패키지 면적이 증가하여 심각한 문제로 되고 있다. 이러한 어려움을 해소하고자 미합중국의 모토롤라사에서 OMPAC이라는 상품명으로 BGA를 개발한 바 있다. 더욱이 몇 종류의 IC 칩이 기판표면에 설치되어 캡슐화제와 일시에 캡슐화 되어 있는 MCM 등과 같은 장치가 개발되어 있다. 이들 새로 개발된 장치는 QFP에 비해 핀 카운트당 작은 패키지 면적을 필요로 하므로 코스트면에서 유리하여 그 용도가 급속히 확산되고 있다. 그러나 이들 장치도 몇가지 결점이 있는데, 그중에서 가장 중요한 것은 캡슐화용 수지 조성물의 경화수축 및 경화된 수지 조성물과 회로기판 사이의 열팽창계수의 차이로 인해 패키지의 뒤틀림(warpage)이 일어나기는 쉽다는 점이다. 이 문제를 해결하고자 각종 수지 캡슐화제가 개발되어 있으나 뒤틀림의 문제를 완전히 해결하지 못하고 있다.The present invention relates to an epoxy resin liquid composition and a cured product thereof. In particular, the present invention is an epoxy resin liquid composition suitable for use as a semiconductor encapsulant such as a plastic ball grid array (BGA), a multi-chip module (MCM: multi-moduly) and a chip size package (CSP), and a cured product thereof. It is about. One important point ever needed to construct a logic LSI to manufacture a device is its suitability for the trend of multipin structures, i.e., structures with multiple pins. Devices such as quad flat packages (QFPs), which are suitable for multi-pin structures, require a number of technologies. For example, by adopting a pin pitch of 0.3 mm or less, the number of pins can be increased, but even a slight misalignment of the elements during assembly may cause product defects. They had to be removed, reassembled and remodeled. Moreover, as the number of pins increases, the package size increases, and consequently, the package area increases, which is a serious problem. To solve these difficulties, Motorola, Inc., developed BGA under the trade name OMPAC. In addition, devices such as MCM, in which several types of IC chips are installed on the substrate surface and encapsulated at one time, are encapsulated. These newly developed devices require a smaller package area per pin count compared to QFP, which is advantageous in terms of cost and is rapidly expanding in applications. However, these devices also have some drawbacks, the most important of which is that the shrinkage of the encapsulating resin composition and the difference in coefficient of thermal expansion between the cured resin composition and the circuit board are likely to cause warpage of the package. . Various resin encapsulating agents have been developed to solve this problem, but have not completely solved the problem of distortion.
이러한 상황을 인식하여 본 발명자들은 상기한 과제를 해결하고자 예의 연구를 한 결과로서 본 발명을 완성한 것이다. 즉 본 발명은 패키지가 큰 표면적을 가지더라도 뒤틀림에 대한 저항이 큰 반도체 패키지를 제조할 수 있도록 하는 반도체 캡슐화용 에폭시 수지 액상 조성물을 제공함에 있다.Recognizing such a situation, the present inventors have completed the present invention as a result of earnest research to solve the above problems. That is, the present invention provides an epoxy resin liquid composition for semiconductor encapsulation, which enables a semiconductor package having a large resistance to warping even if the package has a large surface area.
제1도는 반도체장치의 기판의 뒤틀림 크기를 나타내는 개략도로서, 1은 수지캡슐화제의 경화물이고, 2는 반도체 기판이며, 길이 a는 기판의 뒤틀림 크기이다.1 is a schematic view showing the warpage size of a substrate of a semiconductor device, where 1 is a cured product of a resin encapsulating agent, 2 is a semiconductor substrate, and a length a is the warpage size of the substrate.
제2도는 반도체 부품의 일예를 나타내는 개략도로서, 3은 반도체, 4는 에폭시수지 액상 조성물(수지 캡슐화제) 5는 기판, 6은 마이크로터미날이다.2 is a schematic view showing an example of a semiconductor component, 3 is a semiconductor, 4 is an epoxy resin liquid composition (resin encapsulant) 5 is a substrate, and 6 is a microterminal.
즉, 본 발명은 다음의 것들에 관한 것이다 :That is, the present invention relates to the following:
(1) 필수성분으로서 실리콘 개질 에폭시 수지 이외의 에폭시 수지(a), 실리콘 개질 에폭시 수지(b), 다가염기 카르복시산계 경화제(c), 무기충전제(d), 및 경화 촉진제를 함유하는 반도체 캡슐화용 에폭시 수지 액상 조성물.(1) For semiconductor encapsulation containing an epoxy resin (a), a silicone-modified epoxy resin (b), a polybasic carboxylic acid curing agent (c), an inorganic filler (d), and a curing accelerator as an essential component Epoxy resin liquid composition.
(2) 상기 (1)항에 있어서, 에폭시 수지(a) 및 실리콘 개질 에폭시 수지(b)의 혼합물이 상온에서 액체인 반도체 캡슐화용 에폭시 수지 액상 조성물.(2) The epoxy resin liquid composition for semiconductor encapsulation according to (1), wherein the mixture of the epoxy resin (a) and the silicone-modified epoxy resin (b) is a liquid at room temperature.
(3) 상기 (1)항 또는 (2)항에 있어서, 에폭시 수지(a)가 상온에서 액체인 반도체 캡슐화용 에폭시 수지 액상 조성물.(3) The epoxy resin liquid composition for semiconductor encapsulation according to the above (1) or (2), wherein the epoxy resin (a) is a liquid at room temperature.
(4) 상기 (1)항 내지 (3)항중 어느 한 항에 있어서, 실리콘 개질 에폭시 수지(b)가 아래의 구조식(1)을 가진 반도체 캡슐화용 에폭시 수지 액상 조성물.(4) The epoxy resin liquid composition for semiconductor encapsulation according to any one of (1) to (3), wherein the silicone-modified epoxy resin (b) has the following structural formula (1).
위의 식에서 m과 n은 각각 평균값을 나타내며 n은 0.5∼10, m은 1∼50이고; m이 1일 때 R은 C1-C8알킬기 또는 페닐기를 나타내고, m이 1 이상일 때 R은 서로간에 같거나 상이하며 각각 독립하여 C1-C9알킬기 또는 페닐기를 나타내고; R1은 수소원자, C1-C4알콕시기 또는 글리시딜옥시기를 나타내고, G는 글리시딜기를 나타낸다.Where m and n each represent an average value, n is 0.5 to 10 and m is 1 to 50; when m is 1, R represents a C 1 -C 8 alkyl group or a phenyl group, and when m is 1 or more, R represents the same or different from each other and each independently represents a C 1 -C 9 alkyl group or a phenyl group; R 1 represents a hydrogen atom, a C 1 -C 4 alkoxy group or a glycidyloxy group, and G represents a glycidyl group.
(5) 상기 (4)항에 있어서, 구조식 (1)에서 M은 25∼30, n은 1∼5, R은 메틸기이고 R1은 수소원자인 반도체 캡슐용 에폭시 수지 액상 조성물.(5) The epoxy resin liquid composition for semiconductor capsule according to the above (4), wherein M is 25 to 30, n is 1 to 5, R is a methyl group, and R 1 is a hydrogen atom in the structural formula (1).
(6) 상기 (1)항 내지 (5)항중 어느 한 항에 있어서, 에폭시 수지(a) : 실리콘 개질 에폭시 수지(b)의 비가 99.5 : 0.5∼60 : 40의 범위내인 반도체 캡슐화용 에폭시 수지 액상 조성물.(6) The epoxy resin for semiconductor encapsulation according to any one of (1) to (5), wherein the ratio of the epoxy resin (a): silicone-modified epoxy resin (b) is in the range of 99.5: 0.5 to 60:40. Liquid composition.
(7) 상기 (1)항 내지 (6)항중 어느 한 항에 있어서, 다염기 카르복사산계 경화제(c)가 상온에서 액상의 산 무수물인 반도체 캡슐화용 에폭시 수지 액상 조성물.(7) The epoxy resin liquid composition for semiconductor encapsulation according to any one of (1) to (6), wherein the polybasic carboxylic acid curing agent (c) is a liquid acid anhydride at room temperature.
(8) 상기 (1)항 내지 (7)항중 어느 한 항에 있어서, 무기충전제(d)가 용융구상(球狀) 실리카, 용융분말 실리카, 용융구상 실리카 또는 이들의 혼합물인 반도체 캡슐화용 에폭시 수지 액상 조성물.(8) The epoxy resin for encapsulating semiconductor according to any one of (1) to (7), wherein the inorganic filler (d) is molten spherical silica, molten powder silica, molten spherical silica, or a mixture thereof. Liquid composition.
(9) 상기 (1)항 내지 (8)항중 어느 한 항에 있어서, 경화 촉진제(e)가 마이크로캡슐화 개질 아민인 반도체 캡슐화용 에폭시 수지 액상 조성물.(9) The epoxy resin liquid composition for semiconductor encapsulation according to any one of (1) to (8), wherein the curing accelerator (e) is a microencapsulated modified amine.
(10) 상기 (1)항 내지 (9)항중 어느 한 항에 기재된 에폭시 수지 액상 조성물을 경화하여 수득한 경화물.Hardened | cured material obtained by hardening | curing the epoxy resin liquid composition in any one of said (1)-(9).
(11) 상기 (1)항 내지 (9)항중의 어느 한 항에 기재된 반도체 캡슐화용 에폭시 수지 조성물의 경화물로 캡슐화한 반도체 부품.(11) A semiconductor component encapsulated with a cured product of the epoxy resin composition for semiconductor encapsulation according to any one of (1) to (9).
(12) 상기 (11)항에 있어서, 반도체를 표면에 가진 제1표면과 상기 제1표면에 대해 마주보며 표면에 마이크로터미날을 가진 제 2면을 각각 가진 기판인 반도체부품.(12) The semiconductor component according to the above (11), which is a substrate having a first surface having a semiconductor on its surface and a second surface having a micro terminal on its surface facing the first surface.
본 발명에서 사용되는 실리콘 개질 에폭시 수지 이외의 에폭시 수지(a)는 특별히 한정되지 않으며, 비스페놀-A형 에폭시 수지, 비스페놀-F형 에폭시 수지, 디글리시딜-O-톨루이딘형 에폭시 수지, 디글시딜아닐린형 에폭시 수지, 페닐 글리시딜 에테르, 레조르시놀 디글리시딜 에테르, 1, 6-헥산디올 디글리시딜 에테르, 트리메틸롤프로판 트리글리시딜 에테르, 폴리프로필렌 글리콜형 디글리시딜 에테르 및 시클지방족 에폭시드 수지를 사용할 수 있다. 이들 에폭시 수지 중에서 시클로지방족 에폭시드 수지는 그 점도가 낮고 내열성이 양호하므로 바람직하다. 시클로지방족 에폭시드 수지로서는 지환족(脂環族) 디에폭시카르복실레이트[예 : 비스(3, 4-에폭시시클로헥실)아디페이트 및 3,4-에폭시시클로헥실메틸·3,4-에폭시시클로헥산카르복실레이트]가 있다. 이들 중에서 3, 4-에폭시시클로헥실메틸·3, 4-에폭시시클로헥산카르복실레이트는 그 점도가 낮고 내열성이 우수하다는 점에서 특히 바람직하다. 에폭시 수지 중의 염소 함유량은 부식성을 충분히 감소시킬 수 있을 정도로 낮은 것이 바람직하다. 상온에서 고체인 에폭시 수(예 : 크레졸 노볼락형 에폭시 수지 및 트리페놀메탄형 에폭시 수지)를 본 발명의 에폭시 수지 액상 조성물에 혼합하여 작업성을 개선하고 점도 증가를 억제할 수 있는데, 그 배합량은 에폭시 수지 액상 조성물의 액체 거동에 해를 주지 아니하는 범위내로 하며 전체 에폭시 수지 중에서 차지하는 비율을 40중량% 이하로 한다. 본 발명에서 사용하는 실리콘 개질 에폭시 수지(b)는 여러 가지 종류가 있다. 이들 중에서 상기한 구조식(1)의 실리콘 개질 에폭시 수지가 바람직하다. 구조식(1)의 실리콘 개질 에폭시 수지는 백금촉매[예 : 헥사클로로백금(IV) 6수화염]를 사용하여 아래 구조식(2)의 실리콘오일과 아래 구조식(3)의 알킬기 함유방향족 화합물을 히드로실릴화 반응시켜 합성할 수 있다.Epoxy resin (a) other than the silicone modified epoxy resin used by this invention is not specifically limited, Bisphenol-A type epoxy resin, bisphenol-F type epoxy resin, diglycidyl-O-toluidine type epoxy resin, diglycid Dianiline type epoxy resin, phenyl glycidyl ether, resorcinol diglycidyl ether, 1, 6-hexanediol diglycidyl ether, trimethylolpropane triglycidyl ether, polypropylene glycol type diglycidyl ether And cycloaliphatic epoxide resins can be used. Among these epoxy resins, cycloaliphatic epoxide resins are preferred because of their low viscosity and good heat resistance. Examples of cycloaliphatic epoxide resins include cycloaliphatic diepoxycarboxylates such as bis (3,4-epoxycyclohexyl) adipate and 3,4-epoxycyclohexylmethyl 3,4-epoxycyclohexane. Carboxylate]. Among them, 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate is particularly preferred in view of low viscosity and excellent heat resistance. The chlorine content in the epoxy resin is preferably low enough to sufficiently reduce the corrosiveness. Epoxy water (e.g., cresol novolak type epoxy resin and triphenolmethane type epoxy resin) that is solid at room temperature can be mixed with the epoxy resin liquid composition of the present invention to improve workability and suppress viscosity increase. It is in the range which does not harm the liquid behavior of an epoxy resin liquid composition, and the ratio occupies in all epoxy resins shall be 40 weight% or less. There are various kinds of silicone-modified epoxy resin (b) used in the present invention. Of these, silicone modified epoxy resins of the above structural formula (1) are preferred. The silicone-modified epoxy resin of formula (1) is hydrosilyl using a platinum catalyst (e.g., hexachloroplatin (IV) hexahydrate) to the silicone oil of formula (2) and the alkyl group-containing aromatic compound of formula (3) The reaction can be synthesized.
식 (2) 및 (3)에 있어서, m 및 n은 각각 평균값을 나타내는데, n은 0.5∼10, 1∼7 및 2∼5로서 증가하는 쪽이 바람직하고, m은 1∼50, 5∼40 및 1∼30으로서 증가하는 쪽이 바람직하며; R은 m이 1일 때 C1∼C8알킬기 또는 페닐기를 나타내고; m이 1 이상일 때는 R은 서로간에 같거나 상이하며 각각 독립하여 C1∼C8알킬기 또는 페닐기를 나타내고; G는 글리시딜기를 나타낸다. R 및 R1으로 나타내어지는 C1∼C8알킬기로는 메틸기에틸기, n-프로필기, 이소프로필기, n-부틸기, 이소부틸기, t-부틸기, 펜틸기, 헥실기, 헵틸기 및 옥틸기를 들 수 있다. R1으로 나타내어지는 C1∼C4알콕시기로는 메톡시기, 에톡시기, n-프로폭시기, 이소프로폭시기, n-부톡시기, 이소부톡시기, t-부톡시기를 들 수 있다. R로서는 메틸기. 에틸기 또는 페닐기가 바람직하고, R1으로서는 수소원자 또는 메틸기가 바람직하다.In formulas (2) and (3), m and n each represent an average value, but n is preferably increased to 0.5 to 10, 1 to 7 and 2 to 5, and m is 1 to 50 and 5 to 40. And increasing from 1 to 30 is preferred; R represents a C 1 -C 8 alkyl group or a phenyl group when m is 1; when m is 1 or more, R is the same as or different from each other, and each independently represents a C 1 -C 8 alkyl group or a phenyl group; G represents a glycidyl group. Examples of the C 1 to C 8 alkyl group represented by R and R 1 include methyl group ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, t-butyl group, pentyl group, hexyl group, heptyl group and An octyl group is mentioned. C 1 ~C 4 alkoxy group represented by R 1 may be mentioned methoxy, ethoxy, n- propoxy, iso-propoxy, n- butoxy group, isobutoxy Messenger group, t- butoxy group. R is a methyl group. An ethyl group or a phenyl group is preferable, and R 1 is preferably a hydrogen atom or a methyl group.
구조식(1)로 나타내어지는 화합물의 몇가지 예는 아래의 표 1에 나와 있다.Some examples of the compound represented by formula (1) are shown in Table 1 below.
[표 1]TABLE 1
본 발명에 의한 에폭시 수지 액상 조성물에 있어서, 에폭시 수지(a)와 실리콘 개질 에폭시 수지(b)를 중량비로서 99.5 : 0.5∼60 : 40, 97 : 3∼70 : 30 및 95 : 5∼80 : 20로 하여 사용하는데 증가하는 비율쪽이 바람직하다. 에폭시 수지 중의 염소의 함유량은 부식성을 충분히 감소시킬 수 있도록 낮은 것이 바람직하다. 본 발명에 있어서, 다염기 카르복시산계 경화제는 경화제(c)로서 사용된다. 다염기 카르복시산계 경화제로서는 상온에서 액상인 다염기 카르복시산 무수물이 바람직하다. 이러한 다염기 카르복시산 무수물의 특수한 예로서는 메틸헥사히드로프탈산 무수물, 메틸테트라히드로프탈산 무수물, 나딕 메틸 무수물 및 폴리아젤라산 무수물이 있다. 이들 경화제를 단독으로 사용해도 좋고 두가지 이상의 혼합물로 하여 사용해도 좋다. 경화제의 사용량은 에폭시 수지(a) 및 (b)의 총에폭시 당량에 대하여 0.7∼1.2 화학당량 및 0.9∼1.0 화학당량인데, 증가하는 화학당량쪽이 바람직하다.In the epoxy resin liquid composition according to the present invention, the epoxy resin (a) and the silicone-modified epoxy resin (b) are used in a weight ratio of 99.5: 0.5 to 60:40, 97: 3 to 70:30 and 95: 5 to 80:20. It is preferable to increase the ratio to use. The content of chlorine in the epoxy resin is preferably low so as to sufficiently reduce the corrosiveness. In the present invention, the polybasic carboxylic acid curing agent is used as the curing agent (c). As a polybasic carboxylic acid type hardening | curing agent, the liquid polybasic carboxylic anhydride which is liquid at normal temperature is preferable. Specific examples of such polybasic carboxylic anhydrides are methylhexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, nadic methyl anhydride and polyazelaic anhydride. These curing agents may be used alone or as a mixture of two or more thereof. The amount of the curing agent used is 0.7 to 1.2 chemical equivalents and 0.9 to 1.0 chemical equivalents relative to the total epoxy equivalents of the epoxy resins (a) and (b), with increasing chemical equivalents being preferred.
본 발명에서 사용되는 무기충전제(d)의 특수한 예로서는 용융구상 실리카, 용융분말 실리카, 용융구상 실리카, 질화규소 및 알루미나 분말이 있다. 이들 충전제의 바람직한 평균입자 직경은 0.5㎛∼40㎛이다. 이들 충전제를 단독으로 사용해도 좋고 두가지 이상의 혼합물로 하여 사용해도 좋다. 충전제의 사용량은 총수지 조성에 대하여 60∼95 중량%, 70∼90 중량% 및 75∼85 중량%인데 증가하는 중량%쪽이 바람직하다. 무기충전제(d)의 사용량이 60 중량% 미만이면 액상 에폭시 수지 조성물의 취급이 용이하다. 그러나 경화물의 직선 열팽창계수를 올려주어 본 발명의 목적을 달성할 수 있는 경우도 있다.Specific examples of the inorganic filler (d) used in the present invention include fused spherical silica, fused powder silica, fused spherical silica, silicon nitride and alumina powder. The average particle diameter of these fillers is 0.5 micrometer-40 micrometers. These fillers may be used alone or as a mixture of two or more thereof. The amount of the filler to be used is 60 to 95% by weight, 70 to 90% by weight and 75 to 85% by weight with respect to the total resin composition. When the amount of the inorganic filler (d) is less than 60% by weight, it is easy to handle the liquid epoxy resin composition. However, in some cases, the object of the present invention can be achieved by raising the linear thermal expansion coefficient of the cured product.
본 발명에서 사용되는 경화 촉진제(e)는 종래부터 에폭시 수지 경화에 사용되고 있는 것이면 특히 한정되지 않는다. 그 특수한 예로서는 이미다졸, 트리스(디메틸아미노메틸)페놀, 디아자비시클로운데센(DBU)과 그 염, 및 트리페닐포스 핀이 있다. 상온에서의 작업성을 고려하면 마이크로캡슐화 아민 등의 강력한 경화 촉진제를 사용하는 것이 바람직하다. 경화제의 사용량은 사용되는 에폭시수지 100 중량부에 대하여 0.1∼10 중량부이다. 상기한 마이크로캡슐화 강력경화 촉진제는 소요의 범위내의 양으로 유효성분을 함유하도록 하는 양으로 사용된다. 본 발명에 의한 에폭시 수지 액상 조성물은 상기한 바와 같이 필수성분으로서 에폭시 수지(a) 및 (b), 경화제(c), 무기충전제(d) 및 경화 촉진제(e)를 함유하고, 필요한 경우에는 추가로 요변성(搖變性 : thixotropy) 부여제, 레벨링제(levelling agent), 소포제 및 기타 첨가제를 함유할 수 있다. 본 발명에 의한 에폭시 수지 액상 조성물은 이들 필수성분과 보조제 및 첨가제의 혼합물을 예컨대 진공 혼화기에서 균일하게 교반함으로써 용이하게 제조할 수 있다. 본 발명에 의한 경화물은 예컨대 본 발명의 에폭시 수지 액상 조성물을 80℃∼180℃에서 0.5∼10시간 동안 가열함으로써 얻을 수 있다. 뒤틀림을 보다 효과적으로 감소시키자면 가열경화를 두단계, 예컨데 90℃∼120℃에서 0.5∼5시간 동안 및 120℃∼170℃에서 0.5∼5시간 동안 실시하는 것이 바람직하다.The hardening accelerator (e) used by this invention will not be specifically limited if it is conventionally used for epoxy resin hardening. Specific examples thereof include imidazole, tris (dimethylaminomethyl) phenol, diazabicycloundecene (DBU) and salts thereof, and triphenylphosphine. Considering the workability at room temperature, it is preferable to use a strong curing accelerator such as microencapsulated amine. The usage-amount of a hardening | curing agent is 0.1-10 weight part with respect to 100 weight part of epoxy resins used. The microencapsulation intensive curing accelerator is used in an amount such that the active ingredient is contained in an amount within a required range. The epoxy resin liquid composition according to the present invention contains an epoxy resin (a) and (b), a curing agent (c), an inorganic filler (d) and a curing accelerator (e) as essential components as described above. It may contain thixotropy imparting agents, leveling agents, defoamers and other additives. The epoxy resin liquid composition according to the present invention can be easily prepared by uniformly stirring a mixture of these essential components, auxiliaries and additives, for example, in a vacuum mixer. The hardened | cured material by this invention can be obtained, for example by heating the epoxy resin liquid composition of this invention at 80 degreeC-180 degreeC for 0.5 to 10 hours. To more effectively reduce warping, heat curing is preferably carried out in two steps, for example 0.5 to 5 hours at 90 ° C to 120 ° C and 0.5 to 5 hours at 120 ° C to 170 ° C.
본 발명을 적절히 적용할 수 있는 반도체 부품으로서는 반도체를 가진 표면과 마이크로터미날을 가진 반대쪽 표면을 각각 가진 기판(예 : BGA, MCM 및 CSP)을 들 수 있다. 본 발명에 의한 에폭시 수지 액상 조성물의 경화물로 캡슐화된 반도체 부품은 예컨대 와이어 본딩 등의 수단으로써 기판위에 IC 칩을 배치한 다음, 이 IC 칩을 드롭핑(dropping) 또는 포팅(potting) 등의 수단을사용하여 본 발명에 의한 에폭시 수지 액상 조성물로써 캡슐화한 후 이 조성물을 상기한 조건하에서 가열경화함으로써 제조할 수 있다. 본 발명을 아래의 실시예를 참조하여 보다 상세히 설명한다.Examples of the semiconductor component to which the present invention can be suitably applied include substrates (eg, BGA, MCM and CSP) each having a surface having a semiconductor and an opposite surface having a micro terminal. A semiconductor part encapsulated with a cured product of the liquid epoxy resin composition according to the present invention is disposed by placing an IC chip on a substrate, for example, by wire bonding, or the like, and then dropping or potting the IC chip. It can be prepared by encapsulating with the epoxy resin liquid composition according to the present invention using heat curing under the above conditions. The invention is described in more detail with reference to the following examples.
[실시예 1]Example 1
에폭시 수지(a)로서 Celloxide 2021(3,4-에폭시시클로헥실메틸: 3,4-에폭시 시클로헥산카르복실레이트, 일본국의 Daicell Chemical Industry사제, 에폭시 당량 : 133) 90 중량부, 구조식(1)로 나타내어지는 실리콘 개질 에폭시 수지(b)(R=메틸기, R1=수소, n=3, m=26, 에폭시 당량 : 1,004) 10 중량부, 산부수물(경화제)(c)로서 나딕 메틸 무수물(Kayahard MCD, 일본국의 NIPPON KAYAKU사제) 110 중량부, 무기충전제(d)로서 평균입자 직경 30㎛의 구상실리카 530 중량부 및 평균입자 직경 13㎛의 구상실리카 330 중량부, 경화 촉진제(e)로서 마이크로캡슐화개질 아민(Novacure, 일본국의 ASAHI CHEMICAL INDUSTRY사제) 8중량부, 그리고 첨가제로서 카아본 블랙 0.5 중량부, 요변성 부여제(일본국의 Nippon Aerosil사제) 8 중량부 및 소포제 0.5 중량부를 진공 혼화기중에서 균일한 혼합물이 얻어질 때까지 교반하여 본 발명에 의한 반도체 캡슐화용 에폭시 수지 액상 조성물 1,087 중량부를 얻었다. 위에서 얻은 반도체 캡슐화용 에폭시 수지 액상 조성물을 회로기판(27mm×27mm×0.6mm) 위에 도포(도포 사이즈 : 24mm×24mm)한 다음 100℃에서 3시간 동안, 그리고 다시 150℃에서 2시간 동안 경화하여 반도체 장치를 제조하였다. 기판의 뒤틀림은 150㎛이었다. 신뢰성 시험결과는 만족하였고, 내습성 시험과 가열사이클 시험에 있어서 아무런 이상이 관찰되지 않았다.As the epoxy resin (a), Celloxide 2021 (3,4-epoxycyclohexylmethyl: 3,4-epoxy cyclohexanecarboxylate, manufactured by Daicell Chemical Industry of Japan, Epoxy equivalent: 133) 90 parts by weight, structural formula (1) Nadic methyl anhydride as the silicone-modified epoxy resin (b) (R = methyl group, R 1 = hydrogen, n = 3, m = 26, epoxy equivalent: 1,004) represented by the formula (c), 10 parts by weight (Kayahard MCD, manufactured by NIPPON KAYAKU of Japan) 110 parts by weight, 530 parts by weight of spherical silica with an average particle diameter of 30 μm and 330 parts by weight of spherical silica with an average particle diameter as an inorganic filler (d), a curing accelerator (e) 8 parts by weight of microencapsulated modified amine (Novacure, manufactured by ASAHI CHEMICAL INDUSTRY of Japan), and 0.5 parts by weight of carbon black as an additive, 8 parts by weight of thixotropic imparting agent (manufactured by Nippon Aerosil, Japan) and 0.5 parts by weight of antifoaming agent. Stir until a homogeneous mixture is obtained in a vacuum admixture Liquid epoxy resin composition was obtained 1,087 parts by weight for semiconductor encapsulation according to the command. The epoxy resin liquid composition for semiconductor encapsulation obtained above was applied onto a circuit board (27mm × 27mm × 0.6mm) (coating size: 24mm × 24mm), and then cured at 100 ° C. for 3 hours and again at 150 ° C. for 2 hours. The device was prepared. The warpage of the substrate was 150 μm. The reliability test results were satisfactory, and no abnormality was observed in the moisture resistance test and the heating cycle test.
(평가방법) 기판의 가열사이클 : 위에서 얻은 반도체장치에 대하여 표면거칠기 측정계를 사용하여 뒤틀림의 크기를 측정하였다. 기판의 대각선을 따라 측성을 하여 뒤틀림을 도 1에 나온 바와 같이 길이로 나타내었다. 내습성 시험 : 습도 85% 및 온도 85℃로 유지된 고습도 항온실에서 1,000시간 동안 방치한 후 반도체장치를 관찰하여 결함을 가진 IC가 하나 이상 있는가를 확인하였다. 가열사이클 시험 : -55℃와 +125℃사이에서 가열을 1,000회 실시한 후 반도체장치를 관찰하여 배선의 파괴 및/또는 캡슐화제의 균열이 있는가를 확인하였다.(Evaluation method) Heating cycle of substrate: The magnitude | size of the distortion was measured about the semiconductor device obtained above using the surface roughness measuring system. The distortion is measured along the diagonal of the substrate and is shown in length as shown in FIG. 1. Moisture resistance test: After 1,000 hours in a high humidity constant temperature room maintained at 85% humidity and 85 ° C, the semiconductor device was observed to determine whether there is at least one defective IC. Heating Cycle Test: After 1,000 times of heating was conducted between -55 ° C and + 125 ° C, the semiconductor device was observed to determine whether there was a breakage of wiring and / or cracking of the encapsulant.
실시예 2∼5 및 비교예Examples 2-5 and Comparative Examples
표 2에 나온 각 성분(표에서의 숫자들은 중량부임)들을 배합하여 각각의 혼합물을 얻은 다음, 각 혼합물을 사용하여 반도체장치를 제조하였다. 이 장치의 품질을 실시예 1에서와 같이 평가하였다.Each of the components shown in Table 2 (the numbers in the tables are parts by weight) was combined to obtain respective mixtures, and then each mixture was used to manufacture a semiconductor device. The quality of this device was evaluated as in Example 1.
[표 2]TABLE 2
위의 표로부터 명백한 바와 같이 본 발명에 의한 에폭시 수지 액상 조성물로 밀봉된 반도체장치의 기판의 뒤틀림은 비교예의 장치에 비하여 약 절반 정도로 감소되었다.As is clear from the above table, the warpage of the substrate of the semiconductor device sealed with the epoxy resin liquid composition according to the present invention was reduced by about half compared to the device of the comparative example.
본 발명에 의하여 이전 보다 뒤틀림 저항이 훨씬 높은 큰 표면적을 가지며 내습성과 가열사이클에 대한 저항을 가진 반도체장치를 제공할 수 있다. 또한 본 발명에 의하여 큰 사이즈의 MCM 및 BGA와 낮은 스트레스의 CSP 등의 반도체(전기 또는 전자) 부품을 제조할 수 있다. 따라서 패키지할 때에 발생하는 여러 가지 어려움을 감소시킬 수 있다. 그리고 제품 품질을 향상시키는데 극히 유리하므로 공정단계를 줄일 수 있고 코스트를 절감할 수 있다. 더욱이 본 발명에 의한 에폭시 수지 액상 조성물은 값비싼 금속 모울드를 사용하지 않고서도 반도체장치를 캡슐화할 수 있고 형상 디자인을 마음대로 할 수 있으며, 소량 다품종을 제조하는 데 적합하며 기판과의 접착이 극히 우수하다는 장점을 가지고 있다.According to the present invention, it is possible to provide a semiconductor device having a large surface area having a much higher distortion resistance than before, and having a moisture resistance and resistance to a heating cycle. In addition, according to the present invention, semiconductor (electrical or electronic) components such as large sized MCM and BGA and low stressed CSP can be manufactured. Thus, various difficulties in packaging can be reduced. And because it is extremely beneficial to improve product quality, it can reduce process steps and reduce costs. Moreover, the epoxy resin liquid composition according to the present invention can encapsulate a semiconductor device without using expensive metal molds, can have a shape design at will, and is suitable for producing small quantities of various types, and has excellent adhesion with a substrate. It has advantages
Claims (12)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP96-215962 | 1996-07-30 | ||
| JP21596296 | 1996-07-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR980012311A true KR980012311A (en) | 1998-04-30 |
Family
ID=16681132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019970035857A Withdrawn KR980012311A (en) | 1996-07-30 | 1997-07-29 | Epoxy Resin Liquid Composition for Semiconductor Encapsulation |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR980012311A (en) |
| DE (1) | DE19732500A1 (en) |
| FR (1) | FR2751977B1 (en) |
| TW (1) | TW430685B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6946328B2 (en) | 2003-08-11 | 2005-09-20 | Samsung Electronics Co. Ltd. | Method for manufacturing semiconductor devices |
| KR100592461B1 (en) * | 1999-08-19 | 2006-06-22 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Epoxy resin composition and semiconductor device for semiconductor encapsulation |
| KR100592462B1 (en) * | 1999-08-19 | 2006-06-22 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Epoxy Resin Compositions and Semiconductor Devices |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110105646A1 (en) * | 2008-05-21 | 2011-05-05 | Nagase Chemtex Corporation | Epoxy resin composition for encapsulating electronic part |
| JP5353629B2 (en) * | 2008-11-14 | 2013-11-27 | 信越化学工業株式会社 | Thermosetting resin composition |
| JP6315170B2 (en) * | 2013-09-30 | 2018-04-25 | ナガセケムテックス株式会社 | Epoxy resin composition for semiconductor encapsulation, semiconductor packaging structure, and method for producing the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62184017A (en) * | 1986-02-08 | 1987-08-12 | Matsushita Electric Works Ltd | Epoxy resin molding material |
| JP2570002B2 (en) * | 1991-05-29 | 1997-01-08 | 信越化学工業株式会社 | Flip chip sealing material and semiconductor device |
| DE4138411C2 (en) * | 1991-11-22 | 1995-01-26 | Bosch Gmbh Robert | Curing potting compounds |
| JP3147677B2 (en) * | 1994-09-30 | 2001-03-19 | 株式会社村田製作所 | Liquid epoxy resin composition |
-
1997
- 1997-07-24 TW TW086110550A patent/TW430685B/en active
- 1997-07-29 KR KR1019970035857A patent/KR980012311A/en not_active Withdrawn
- 1997-07-29 DE DE19732500A patent/DE19732500A1/en not_active Withdrawn
- 1997-07-30 FR FR9709736A patent/FR2751977B1/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100592461B1 (en) * | 1999-08-19 | 2006-06-22 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Epoxy resin composition and semiconductor device for semiconductor encapsulation |
| KR100592462B1 (en) * | 1999-08-19 | 2006-06-22 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Epoxy Resin Compositions and Semiconductor Devices |
| US6946328B2 (en) | 2003-08-11 | 2005-09-20 | Samsung Electronics Co. Ltd. | Method for manufacturing semiconductor devices |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2751977A1 (en) | 1998-02-06 |
| TW430685B (en) | 2001-04-21 |
| DE19732500A1 (en) | 1998-02-05 |
| FR2751977B1 (en) | 1999-06-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6632881B1 (en) | Encapsulant of epoxy resin and liquid aromatic amine curing agent | |
| EP1470584A2 (en) | No-flow underfill encapsulant | |
| KR980012311A (en) | Epoxy Resin Liquid Composition for Semiconductor Encapsulation | |
| JP2003002949A (en) | Liquid epoxy resin composition for sealing semiconductor and semiconductor device | |
| CN1178230A (en) | Epoxy resin liquid composition for semiconductor encapsulation | |
| CN111989772B (en) | Resin composition for granular encapsulation, semiconductor device and method for producing same | |
| JPH1095835A (en) | Liquid epoxy resin composition for sealing semiconductor | |
| JP2001122945A (en) | Epoxy resin molding material for sealing and electronic component device | |
| JP4696359B2 (en) | Liquid sealing epoxy resin composition and electronic component device | |
| JPH04275325A (en) | Resin composition for semiconductor encapsulation | |
| KR100189095B1 (en) | Epoxy resin compositions for sealing semiconductor precisely | |
| JP2001270932A (en) | Epoxy resin composition and semiconductor device | |
| JPH09169891A (en) | Epoxy resin composition for sealing material, its production and inorganic filler | |
| JP2002293880A (en) | Liquid resin composition for sealing and semiconductor device using the same | |
| JP2000336246A (en) | Epoxy resin composition for sealing semiconductor and semiconductor device | |
| JP2000204139A (en) | Epoxy resin molding material for sealing and electronic device parts | |
| JPH11322898A (en) | Epoxy resin molding material for sealing and electronic part device | |
| JP7404725B2 (en) | Encapsulant for transfer molding and electronic component equipment | |
| KR100785572B1 (en) | Epoxy Resin Compositions and Electronic Devices | |
| JP2001302759A (en) | Liquid epoxy resin composition for sealing and semiconductor device | |
| JP4014307B2 (en) | Resin composition for semiconductor encapsulation | |
| KR100217763B1 (en) | Epoxy resin composition for semiconductor encapsulation and semiconductor device | |
| JP4631165B2 (en) | Liquid sealing epoxy resin composition and electronic component device | |
| KR100479858B1 (en) | Liquid Epoxy Resin Composition for Encapsulating Semiconductor Device | |
| JPH0625510A (en) | Epoxy resin composition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19970729 |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |