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KR980006246A - Temperature Control Circuits and Semiconductor Integrated Circuits - Google Patents

Temperature Control Circuits and Semiconductor Integrated Circuits Download PDF

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Publication number
KR980006246A
KR980006246A KR1019970027652A KR19970027652A KR980006246A KR 980006246 A KR980006246 A KR 980006246A KR 1019970027652 A KR1019970027652 A KR 1019970027652A KR 19970027652 A KR19970027652 A KR 19970027652A KR 980006246 A KR980006246 A KR 980006246A
Authority
KR
South Korea
Prior art keywords
temperature
control circuit
temperature sensor
temperature control
output voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019970027652A
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Korean (ko)
Inventor
노리후미 고바야시
Original Assignee
니시무로 다이조
가부시끼가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니시무로 다이조, 가부시끼가이샤 도시바 filed Critical 니시무로 다이조
Publication of KR980006246A publication Critical patent/KR980006246A/en
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
    • G05D23/24—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of Temperature (AREA)

Abstract

냉각 장치 등을 별도로 설치하는 일 없이, 사용 환경의 변화나 회로 동작 속도가 변화되어도 칩 온도를 신속하고 안정하게 제어할 수 있고 오동작을 초래하는 일이 없으며, 짧은 응답 시간으로 온도 제어를 행할 수 있는 온도 제어 회로 및 반도체 집적 회로를 제공한다.It is possible to control the chip temperature quickly and stably even if the operating environment or the circuit operation speed is changed without installing a cooling device or the like, and do not cause a malfunction, and the temperature control can be performed with a short response time. A temperature control circuit and a semiconductor integrated circuit are provided.

온도 제어 회로는 각각 상이한 온도-저항 특성을 갖는 복수의 소자로 구성되는 온도 센서(10, 40, 80)와, 이 온도 센서의 출력 전압을 입력함으로써, 상기 출력 전압에 따라 소비 전류를 제어하는 제어 회로(20, 50, 70)를 구비함으로써, 제어 회로에서의 발열량을 온도 센서의 출력에 의하여 제어하여 온도를 제어한다. 이 온도 제어 회로는 동일 기판상에 구성되며, 온도 특성에 우수한 반도체 집적 회로로 할 수 있다.The temperature control circuit controls the current consumption according to the output voltage by inputting temperature sensors 10, 40, and 80, which are composed of a plurality of elements each having different temperature-resistance characteristics, and an output voltage of the temperature sensor. By providing the circuits 20, 50, 70, the amount of heat generated in the control circuit is controlled by the output of the temperature sensor to control the temperature. This temperature control circuit is formed on the same substrate and can be a semiconductor integrated circuit excellent in temperature characteristics.

Description

온도 제어 회로 및 반도체 집적 회로Temperature Control Circuits and Semiconductor Integrated Circuits

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 제1 실시예를 도시한 회로도.1 is a circuit diagram showing a first embodiment of the present invention.

Claims (6)

각각 상이한 온도-저항 특성을 갖는 복수의 소자로 구성되는 온도 센서, 및 온도 센서의 출력 전압을 입력함으로써, 상기 출력 전압에 따라 소비전류를 제어하는 제어 회로를 구비한 것을 특징으로 하는 온도제어 회로.And a temperature sensor composed of a plurality of elements each having a different temperature-resistance characteristic, and a control circuit for controlling the consumption current according to the output voltage by inputting an output voltage of the temperature sensor. 제1항에 있어서, 상기 온도 센서가 전원과 접지간에 직렬 접속된 MOSFET과 저항으로 접속된 것을 특징으로 하는 온도 제어 회로.2. The temperature control circuit according to claim 1, wherein the temperature sensor is connected with a MOSFET and a resistor connected in series between a power supply and a ground. 제1항에 있어서, 상기 제어 회로는 상기 온도 센서의 출력이 공통으로 게이트 입력되고, 전원과 접지간에 소스, 드레인 접속된 복수의 MOSFET으로 구성된 것을 특징으로 하는 온도 제어 회로.The temperature control circuit according to claim 1, wherein the control circuit is composed of a plurality of MOSFETs whose outputs of the temperature sensor are commonly gated and input and drain connected between a power supply and a ground. 제3항에 있어서, 상기 복수의 MOSFET이 일 도전형이고, 이들 각각의 일 도전형 MOSFET에 항상 온이 되는 역 도전형 MOSFET이 접속된 것을 특징으로 하는 온도 제어 회로.4. The temperature control circuit according to claim 3, wherein the plurality of MOSFETs are of one conductivity type and a reverse conductivity type MOSFET is always connected to each of the one conductivity type MOSFETs. 제2항에 있어서, MOSFET이 각각 게이트폭이 다르고, 소정의 선택 신호로 도통하는 복수의 MOSFET이 병렬 접속된 것을 특징으로 하는 온도 제어 회로.The temperature control circuit according to claim 2, wherein the MOSFETs have different gate widths and a plurality of MOSFETs connected in parallel with a predetermined selection signal are connected in parallel. 각각 상이한 온도-저항 특성을 갖는 복수의 소자로 구성되는 온도 센서, 및 상기 온도 센서의 출력 전압을 입력함으로써, 상기 출력 전압에 따라 소비 전류를 제어하는 제어 회로를 동일 기판상에 구비한 것을 특징으로 하는 반도체 직접 회로.A temperature sensor composed of a plurality of elements each having a different temperature-resistance characteristic, and a control circuit for controlling the consumption current in accordance with the output voltage by inputting an output voltage of the temperature sensor, are provided on the same substrate. Semiconductor integrated circuit.
KR1019970027652A 1996-06-27 1997-06-26 Temperature Control Circuits and Semiconductor Integrated Circuits Ceased KR980006246A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP96-167360 1996-06-27
JP8167360A JPH1011157A (en) 1996-06-27 1996-06-27 Temperature control circuit and semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
KR980006246A true KR980006246A (en) 1998-03-30

Family

ID=15848281

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970027652A Ceased KR980006246A (en) 1996-06-27 1997-06-26 Temperature Control Circuits and Semiconductor Integrated Circuits

Country Status (3)

Country Link
JP (1) JPH1011157A (en)
KR (1) KR980006246A (en)
TW (1) TW329045B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100618876B1 (en) 2004-11-10 2006-09-04 삼성전자주식회사 Sequential tracking temperature sensor with hysteresis characteristics and its temperature sensing method
JP2009058438A (en) 2007-08-31 2009-03-19 Toshiba Corp Temperature detection circuit
CN103176489B (en) * 2013-02-06 2015-09-30 南京千韵电子科技有限公司 Chip internal temperature-controlled process and device and the experiment instrument based on this method

Also Published As

Publication number Publication date
JPH1011157A (en) 1998-01-16
TW329045B (en) 1998-04-01

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