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KR980003745A - Manufacturing Method of Liquid Crystal Display and Structure of Liquid Crystal Display - Google Patents

Manufacturing Method of Liquid Crystal Display and Structure of Liquid Crystal Display Download PDF

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Publication number
KR980003745A
KR980003745A KR1019960023448A KR19960023448A KR980003745A KR 980003745 A KR980003745 A KR 980003745A KR 1019960023448 A KR1019960023448 A KR 1019960023448A KR 19960023448 A KR19960023448 A KR 19960023448A KR 980003745 A KR980003745 A KR 980003745A
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South Korea
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liquid crystal
crystal display
layer
insulating layer
bus line
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KR1019960023448A
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Korean (ko)
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KR100232682B1 (en
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김웅권
이후영
임경남
박성일
김정현
류기현
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구자홍
Lg 전자주식회사
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Priority to KR1019960023448A priority Critical patent/KR100232682B1/en
Priority to DE19712233A priority patent/DE19712233C2/en
Priority to US08/826,804 priority patent/US6100954A/en
Priority to FR9703615A priority patent/FR2746961B1/en
Priority to JP9152097A priority patent/JPH1041519A/en
Priority to GB9706354A priority patent/GB2311653B/en
Priority to US08/872,368 priority patent/US6211928B1/en
Publication of KR980003745A publication Critical patent/KR980003745A/en
Application granted granted Critical
Publication of KR100232682B1 publication Critical patent/KR100232682B1/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)

Abstract

본 발명은 IOP(IOP on passivassion)구조의 액정표시장치의 제조방법 등에 있어서 게이트절연막 및 보호막으로 유전율이 3.0 이하인 유기절연 물질인 벤조싸이클로부텐(Benzocyclobutene : BCB)등을 사용하는 것을 특징으로 한다.The present invention is characterized in that a benzocyclobutene (BCB), an organic insulating material having a dielectric constant of 3.0 or less, is used as a gate insulating film and a protective film in a method for manufacturing an IOP (IOP on passivassion) liquid crystal display.

이 유기절연막은 라인단차 특성이 양호하여 게이트버스라인(18)과 데이타버스라인(19)등과의 교차부분에서 라인단차가 발생하는 것을 방지할 수 있고, 개구율을 높이기 위하여 데이타버스라인(19)등의 위에 화소전극(15)을 중첩되게 형성하도라도 도메인 현상이 발생하지 않아 높은 개구율과 높은 표시품질의 액정표시장치를 제조할 수 있다.This organic insulating film has good line step characteristics, which can prevent line step generation at the intersection between the gate bus line 18 and the data bus line 19 and the like, and in order to increase the aperture ratio, the data bus line 19 and the like. Even if the pixel electrodes 15 are superimposed thereon, a domain phenomenon does not occur, and thus a liquid crystal display device having high aperture ratio and high display quality can be manufactured.

Description

액정표시장치의 제조방법 및 액정표시장치의 구조Manufacturing Method of Liquid Crystal Display and Structure of Liquid Crystal Display

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제5도는 본 발명의 액정표시장치의 평면도.5 is a plan view of the liquid crystal display device of the present invention.

제6도는 실시예 1을 설명하기 위한 제5도 Ⅵ-Ⅵ선의 공정 단면도.FIG. 6 is a cross sectional view of a fifth line VI-VI for explaining the first embodiment; FIG.

Claims (28)

기판, 게이트버스라인에서 분기하는 게이트전극, 게이트절연막, 반도체층, 오믹접촉층, 데이타버스라이에서 분기는 소스전극, 드레인전극과 보호막을 포함하는 액정표시장치의 제조방법에 있어서, 유기절연막을 사용하여 상기 게이트절연막과 보호막을 형성하는 공정을 포함하는 것을 특징으로 하는 액정표시장치의 제조방법.In the method of manufacturing a liquid crystal display device comprising a source electrode, a drain electrode, and a protective film, the branch of the substrate, the gate electrode branching off the gate bus line, the gate insulating layer, the semiconductor layer, the ohmic contact layer, and the data bus line are used. Forming a gate insulating film and a protective film. 제1항에 있어서, 상기 데이타버스라인에 선택적으로 중첩되도록 상기 보호막 위에 화소전극을 형성하는 공정을 더 포함하는 것을 특징으로 하는 액정표시장치의 제조방법.The method of claim 1, further comprising forming a pixel electrode on the passivation layer so as to selectively overlap the data bus line. 제1항에 있어서, 상기 게이트버스라인의 이웃하는 게이트버스라인과 데이타버스라인에 선택적으로 중첩되도록 상기 보호막 위에 화소전극을 형성하는 공정을 더 포함하는 것을 특징으로 하는 액정표시장치의 제조방법.The method of claim 1, further comprising forming a pixel electrode on the passivation layer so as to selectively overlap with the neighboring gate bus line and the data bus line of the gate bus line. 제1항에 있어서, 상기 게이트전극과 동일층 위에 화소전극을 형성하는 공정을 더 포함하는 것을 특징으로 하는 액정표시장치의 제조방법.The method of claim 1, further comprising forming a pixel electrode on the same layer as the gate electrode. 제1항에 있어서, 상기 반도체층을 형성하기 전 또는 후에 화소전극을 형성하는 공정을 더 포함하는 것을 특징으로 하는 액정표시장치의 제조방법.The method of claim 1, further comprising forming a pixel electrode before or after forming the semiconductor layer. 제1항에 있어서, 상기 반도체층과 오믹접촉층 사이에 에치스토퍼층이 형성되는 것을 특징으로 하는 액정표시장치의 제조방법.The method of claim 1, wherein an etch stopper layer is formed between the semiconductor layer and the ohmic contact layer. 제1항에 있어서, 상기 게이트절연막은 유기절연막과 적어도 한층 이상의 무기절연막이 적층되게 형성되는 것을 특징으로 하는 액정표시장치의 제조방법.The method of claim 1, wherein the gate insulating layer is formed by stacking an organic insulating layer and at least one inorganic insulating layer. 제1항에 있어서, 상기 보호막은 유기절연막과 적어도 한층 이상의 무기절연막이 적층되게 형성되는 것을 특징으로 하는 액정표시장치의 제조방법.The method of claim 1, wherein the passivation layer is formed by stacking an organic insulating layer and at least one inorganic insulating layer. 제2항에 있어서, 상기 화소전극과 동일 기판위에 공통전극을 형성하는 공정을 더 포함하는 것을 특징으로 하는 액정표시장치의 제조방법.The method of claim 2, further comprising forming a common electrode on the same substrate as the pixel electrode. 제2항에 있어서, 상기 화소전극과 대향하는 기판에 공통전극을 형성하는 공정을 더 포함하는 것을 특징으로 하는 액정표시장치의 제조방법.The method of claim 2, further comprising forming a common electrode on a substrate facing the pixel electrode. 제7항에 있어서, 상기 보호막은 유기절연막과 적어도 한층 이상의 무기절연막이 적층되게 형성되는 것을 특징으로 하는 액정표시장치의 제조방법.The method of claim 7, wherein the protective layer is formed by stacking an organic insulating layer and at least one inorganic insulating layer. 제1항 내지 제11항 중 어느 한 항에 있어서, 상기 유기절연막은 유전율이 3.0이하인 것을 특징으로 하는 액정표시장치의 제조방법.12. The method of claim 1, wherein the organic insulating layer has a dielectric constant of 3.0 or less. 제1항 내지 제11항 중 어느 한 항에 있어서, 상기 유기절연막은 BCB, PFCB 중 선택되는 어느 하나인 것을 특징으로 하는 액정표시장치의 제조방법.The method of manufacturing a liquid crystal display device according to any one of claims 1 to 11, wherein the organic insulating film is any one selected from BCB and PFCB. 제12항에 있어서, 상기 유기절연막은 감광성 유기물질을 포함하는 것을 특징으로 하는 액정표시장치의 제조방법.The method of claim 12, wherein the organic insulating layer comprises a photosensitive organic material. 기판, 게이트버스라인에서 분기하는 게이트전극, 게이트절연막, 반도체층, 오믹접촉층, 데이타버스라인에서 분기하는 소스전극, 드레인전극과 보호막을 포함하는 액정표시 장치에 있어서, 상기 게이트절연막과 보호막은 유기절연막인 것을 특징으로 하는 액정표시장치.A liquid crystal display comprising a substrate, a gate electrode branching from a gate bus line, a gate insulating film, a semiconductor layer, an ohmic contact layer, a source electrode branching from a data bus line, a drain electrode and a protective film, wherein the gate insulating film and the protective film are organic. A liquid crystal display device comprising an insulating film. 제15항에 있어서, 상기 데이타버스라인에 선택적으로 중첩되도록 상기 보호막 위에 화소전극이 형성되는 것을 특징으로 하는 액정표시장치.The liquid crystal display of claim 15, wherein a pixel electrode is formed on the passivation layer so as to selectively overlap the data bus line. 제15항에 있어서, 상기 게이트버스라인의 이웃하는 게이트버스라인과 데이타버스라인에 선택적으로 중첩되도록 상기 보호막 위에 화소전극이 형성되는 것을 특징으로 하는 액정표시장치.16. The liquid crystal display device according to claim 15, wherein a pixel electrode is formed on the passivation layer so as to selectively overlap the neighboring gate bus line and the data bus line. 제15항에 있어서, 상기 게이트전극과 동일층 위에 화소전극이 형성되는 것을 특징으로 하는 액정표시장치.The liquid crystal display device according to claim 15, wherein a pixel electrode is formed on the same layer as the gate electrode. 제15항에 있어서, 상기 반도체층을 형성하기 전 또는 후에 화소전극이 형성되는 것을 특징으로 하는 액정표시장치.The liquid crystal display device according to claim 15, wherein a pixel electrode is formed before or after the semiconductor layer is formed. 제15항에 있어서, 상기 반도체층과 오막접촉층 사이에 에치스토퍼층이 형성되는 것을 특징으로 하는 액정표시장치.The liquid crystal display device according to claim 15, wherein an etch stopper layer is formed between the semiconductor layer and the ohmic contact layer. 제15항에 있어서, 상기 게이트절연막은 유기절연막과 적어도 한층 이상의 무기절연막이 적층되게 형성되는 것을 특징으로 하는 액정표시장치.The liquid crystal display of claim 15, wherein the gate insulating layer is formed by stacking an organic insulating layer and at least one inorganic insulating layer. 제15항에 있어서, 상기 보호막은 유기절연막과 적어도 한층 이상의 무기절연막이 적층되게 형성되는 것을 특징으로 하는 액정표시장치.The liquid crystal display of claim 15, wherein the passivation layer is formed by stacking an organic insulating layer and at least one inorganic insulating layer. 제16항에 있어서, 상기 화소전극과 동일 기판 위에 공통전극을 형성하는 것을 특징으로 하는 액정표시장치.The liquid crystal display of claim 16, wherein a common electrode is formed on the same substrate as the pixel electrode. 제16항에 있어서, 상기 화소전극과 대향하는 기판에 공통전극을 형성하는 것을 특징으로 하는 액정표시장치.The liquid crystal display of claim 16, wherein a common electrode is formed on a substrate facing the pixel electrode. 제21항에 있어서, 상기 보호막은 유기절연막과 적어도 한층 이상의 무기절연막이 적층되게 형성되는 것을 특징으로 하는 액정표시장치.The liquid crystal display of claim 21, wherein the passivation layer is formed by stacking an organic insulating layer and at least one inorganic insulating layer. 제15항 내지 제25항 중 어느 한 항에 있어서, 상기 유기절연막은 유전율이 3.0이하인 것을 특징으로 하는 액정표시장치.26. The liquid crystal display device according to any one of claims 15 to 25, wherein the organic insulating film has a dielectric constant of 3.0 or less. 제15항 내지 제25항 중 어느 한 항에 있어서, 상기 유기절연막은 BCB, PFCB중 선택되는 어느 하나인 것을 특징으로 하는 액정표시장치.26. The liquid crystal display device according to any one of claims 15 to 25, wherein the organic insulating film is any one selected from BCB and PFCB. 제26항에 있어서, 상기 유기절연막은 감광성 유기물질을 포함하는 것을 특징으로 하는 액정표시장치.27. The liquid crystal display device according to claim 26, wherein the organic insulating film comprises a photosensitive organic material. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019960023448A 1996-03-26 1996-06-25 Structure and manufacturing method of liquid crystal display device KR100232682B1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1019960023448A KR100232682B1 (en) 1996-06-25 1996-06-25 Structure and manufacturing method of liquid crystal display device
DE19712233A DE19712233C2 (en) 1996-03-26 1997-03-24 Liquid crystal display and manufacturing method therefor
US08/826,804 US6100954A (en) 1996-03-26 1997-03-25 Liquid crystal display with planarizing organic gate insulator and organic planarization layer and method for manufacturing
FR9703615A FR2746961B1 (en) 1996-03-26 1997-03-25 TRANSISTOR SUBSTRATE FOR A LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
JP9152097A JPH1041519A (en) 1996-03-26 1997-03-26 Manufacturing method of liquid crystal display device and liquid crystal display device by the manufacturing method
GB9706354A GB2311653B (en) 1996-03-26 1997-03-26 Liquid crystal display and method for manufacturing the same
US08/872,368 US6211928B1 (en) 1996-03-26 1997-06-10 Liquid crystal display and method for manufacturing the same

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Application Number Priority Date Filing Date Title
KR1019960023448A KR100232682B1 (en) 1996-06-25 1996-06-25 Structure and manufacturing method of liquid crystal display device

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KR100232682B1 KR100232682B1 (en) 1999-12-01

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KR100303440B1 (en) * 1998-11-02 2002-10-25 삼성전자 주식회사 Liquid crystal display of in-plane switching mode
KR100309213B1 (en) * 1998-12-08 2002-11-23 엘지.필립스 엘시디 주식회사 A method for manufacturing an lcd using a diffarctive expos ure
KR100336899B1 (en) * 1998-12-30 2003-06-12 주식회사 현대 디스플레이 테크놀로지 Manufacturing Method of Thin Film Transistor Liquid Crystal Display Device
KR100419086B1 (en) * 1996-04-12 2004-05-20 삼성전자주식회사 Thin Film Transistor Liquid Crystal Display
US6919931B2 (en) 2000-09-04 2005-07-19 Lg. Philips Lcd Co., Ltd. Array substrate for a liquid crystal display and method for fabricating thereof
US6924179B2 (en) 2000-10-11 2005-08-02 Lg.Philips Lcd Co., Ltd. Array substrate for a liquid crystal display and method for fabricating thereof
US7075601B2 (en) 2001-11-23 2006-07-11 Samsung Electronics Co., Ltd. Thin film transistor array for a liquid crystal display having a data line cross-connection

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KR100532025B1 (en) * 1998-12-04 2006-03-14 엘지.필립스 엘시디 주식회사 Thin film transistor optical sensor and its manufacturing method_
KR100467176B1 (en) * 2000-10-11 2005-01-24 엘지.필립스 엘시디 주식회사 Array pannel of liquid crystal display and fabricating method the same

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* Cited by examiner, † Cited by third party
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KR100419086B1 (en) * 1996-04-12 2004-05-20 삼성전자주식회사 Thin Film Transistor Liquid Crystal Display
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