KR970068132A - 전류구동회로 - Google Patents
전류구동회로 Download PDFInfo
- Publication number
- KR970068132A KR970068132A KR1019960009101A KR19960009101A KR970068132A KR 970068132 A KR970068132 A KR 970068132A KR 1019960009101 A KR1019960009101 A KR 1019960009101A KR 19960009101 A KR19960009101 A KR 19960009101A KR 970068132 A KR970068132 A KR 970068132A
- Authority
- KR
- South Korea
- Prior art keywords
- cell
- current
- output
- nmos transistor
- pmos transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 230000000087 stabilizing effect Effects 0.000 claims 1
- 230000003321 amplification Effects 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
- H03F3/45192—Folded cascode stages
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (3)
- 두개의 입력신호(V+)(V-)를 각각 인가받는 엔모스 트랜지스터와 상기 입력신호(V+)를 인가받는 엔모스 트랜지스터에 연결되어 부하로 동작하는 피모스 트랜지스터로 이루어져 상기 두개의 입력신호(V+)(V-)의 크기를 비교하여 그 차이에 해당하는 전류를 출력하는 제1 차동증폭부와, 상기 제1 차동증폭부와 같은 구조로 이루어져 상기 제1 차동증폭부와 병렬연결된 제2 차동증폭부와, 상기 제1 차동증폭부의 출력전류를 안정화시키는 정전류원으로 동작하는 피모스 트랜지스터 및 이 피모스 트랜지스터와 직렬연결되어 다이오드로 동작하는 엔모스 트랜지스터로 이루어진 전류설정부와, 상기 제1, 제2 차동증폭부와 전류설정부를 제1셀로 구성하고 이 제1셀과 동일한 구조로 이루어진 제2셀과, 상기 제1셀 및 제2셀의 출력전류를 재차 비교 증폭하여 출력하는 출력부로 구성하여 된것을 특징으로 하는 전류구동회로.
- 제1항에 있어서, 출력부는 상기 제1셀의 출력전류에 의해 동작하는 엔모스 트랜지스터와, 상기 제2셀의 출력 전류에 의해 동작하는 다른 엔모스 트랜지스터와 두개의 피모스 트랜지스터로 이루어진 전류미러와, 이 전류미러와 출력된 사이에 직렬 연결되어 커패시터와 연결된 출력단에서 높은 출력저항과 높은 게인을 얻는 캐스코드 타입의 부하로 동작하는 피모스 트랜지스터와 상기 출력단과 상기 제1셀에 연결된 엔모스트랜지스터 사이에 연결되어 캐소코드 타입의 부하로 동작하는 엔모스 트랜지스터로 구성하여 된 것을 특징으로 하는 전류구동회로.
- 제1항 또는 제2항에 있어서, 제1 차동증폭부의 부하로 동작하는 피모스 트랜지스터와 제2 차동증폭부의 부하로 동작하는 피모스 트랜지스터는 전류미러를 형성하게끔 연결되는 것을 특징으로 하는 전류구동회로.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960009101A KR0157954B1 (ko) | 1996-03-29 | 1996-03-29 | 전류구동회로 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960009101A KR0157954B1 (ko) | 1996-03-29 | 1996-03-29 | 전류구동회로 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970068132A true KR970068132A (ko) | 1997-10-13 |
KR0157954B1 KR0157954B1 (ko) | 1999-03-20 |
Family
ID=19454416
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960009101A Expired - Fee Related KR0157954B1 (ko) | 1996-03-29 | 1996-03-29 | 전류구동회로 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0157954B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120116922A (ko) * | 2009-11-25 | 2012-10-23 | 키스틀러 홀딩 아게 | 디지털 전하 증폭기 및 전하 신호를 디지털 신호로 변환하는 방법 |
-
1996
- 1996-03-29 KR KR1019960009101A patent/KR0157954B1/ko not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120116922A (ko) * | 2009-11-25 | 2012-10-23 | 키스틀러 홀딩 아게 | 디지털 전하 증폭기 및 전하 신호를 디지털 신호로 변환하는 방법 |
Also Published As
Publication number | Publication date |
---|---|
KR0157954B1 (ko) | 1999-03-20 |
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19960329 |
|
PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19960329 Comment text: Request for Examination of Application |
|
PG1501 | Laying open of application | ||
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 19980624 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 19980801 Patent event code: PR07011E01D |
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Payment date: 19980801 End annual number: 3 Start annual number: 1 |
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Payment date: 20050718 Year of fee payment: 8 |
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PC1903 | Unpaid annual fee |
Termination category: Default of registration fee Termination date: 20070710 |