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KR970062686A - Ion sensor using pH sensor and manufacturing method thereof - Google Patents

Ion sensor using pH sensor and manufacturing method thereof Download PDF

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KR970062686A
KR970062686A KR1019960004671A KR19960004671A KR970062686A KR 970062686 A KR970062686 A KR 970062686A KR 1019960004671 A KR1019960004671 A KR 1019960004671A KR 19960004671 A KR19960004671 A KR 19960004671A KR 970062686 A KR970062686 A KR 970062686A
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sensing
membrane
sensor
ion sensor
ion
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KR1019960004671A
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KR0163405B1 (en
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손병기
박이순
허영준
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손병기
경북대학교 센서기술연구소
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28—Electrolytic cell components
    • G01N27/30—Electrodes, e.g. test electrodes; Half-cells
    • G01N27/302—Electrodes, e.g. test electrodes; Half-cells pH sensitive, e.g. quinhydron, antimony or hydrogen electrodes

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
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  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

본 발명은 이온센서 및 그 제조방법에 관한 것으로서, 실리콘기판(1)과 소스(2), 드레인(3), 실리콘산화막(4), 실리콘질화막(5), 알루미늄금속전극(6) 및 이온감지막(7)으로 구성된 전계효과 트렌지스터형 이온센서에 있어서, 이온감지막(7)이 친유성 고분자박막(11) 위에 감지물질이 포함된 친수성 고분자감지막(12)을 형성시킨 이중막 구조를 갖도록 한 구성으로, 낮은 감도 및 수용액내에 측정대상 이온만큼 존재하는 수소이온에 대한 감응을 감이온 전계효과 트랜지스터 pH센서(pH-ISFET)바탕소자 위에 친유성의 고분자로 절연 방수막을 형성하여 방지하였을 뿐만 아니라 친수성인 고분자를 외부의 감지막으로 사용함으로서 수용액인 피측정액의 확산 속도를 증가시켜 감응시간을 단축함과 더불어 감도를 향상시킬 수 있는 장점이 있는 전계효과 트랜지스터 pH센서를 이용한 이온센서 및 그 제조방법이다.The present invention relates to an ion sensor and a method of manufacturing the same, and more particularly to an ion sensor and a method of manufacturing the same. In the field effect transistor type ion sensor composed of the membrane (7), the ion sensing membrane (7) has a double membrane structure in which a hydrophilic polymer sensing membrane (12) containing a sensing substance is formed on a lipophilic polymer membrane In addition to the low sensitivity and sensitivity to hydrogen ions present in the aqueous solution as much as the target ions, it is possible to prevent the formation of an insulating waterproof film by using a lipophilic polymer on the background element of the ion-effect transistor pH sensor (pH-ISFET) By using a hydrophilic polymer as an external sensing membrane, it is possible to shorten the sensing time by increasing the diffusion speed of the liquid to be measured, which is an aqueous solution, and to improve the sensitivity of the field effect transistor The document is an ion sensor, and a manufacturing method.

Description

감이온 전계효과 트랜지스터pH센서를 이용한 이온센서 및 그 제조방법Ion sensor using pH sensor and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2도는 이중막 구조의 이온감지막을 갖는 본 발명 FET형 이온센서의 단면도.FIG. 2 is a cross-sectional view of a FET-type ion sensor of the present invention having an ion-sensitive membrane having a double-layer structure. FIG.

Claims (5)

실리콘기판(1)과 소스(2),드레인(3),실리콘질화막(5),실리콘질화막(5), 알루미늄금속전극(6) 및 이온감지막(7)으로 구성된 전계효과 트랜지스터형 이온센서에 있어서, 이온감지막(7)이 친유성 고분자박막(11) 위에 감지물질이 포함된 친수성 고분자감지막(12)을 형성시킨 이중막 구조를 갖는 것을 특징으로 하는 감이온 전계효과 트랜지스터 pH센서를 이용한 이온센서.A field effect transistor type ion sensor composed of a silicon substrate 1, a source 2, a drain 3, a silicon nitride film 5, a silicon nitride film 5, an aluminum metal electrode 6 and an ion sensing film 7 Wherein the ion sensing membrane (7) has a bilayer structure in which a hydrophilic polymer sensing membrane (12) containing a sensing material is formed on a lipophilic polymer membrane (11). Ion sensor. 통상적인 반도체제조공정으로 실리콘기판(1)상에, 소스(2), 드레인(3), 실리콘산화막(4), 질화실리콘(5) 및 알루미늄금속전극(6)을 순차 형성하고, 상기 질화실리콘(5)의 pH감지게이트(8)상에 친유성 고분자 감광액을 회전도포하고 건조하여 친유성 고분자박막(11)을 형성한 후 그 위에 감지물질이 포함된 친수성 고분자 감광액을 회전도포하고 건조한 다음 마스크를 놓고 자외선 광원에 노광하고 용매로 현상하는 사진식각공정을 통하여 절연방수기능의 친유성 고분자박막(12)을 형성하여 친유성 고분자 박막과 친수성 감지막의 이중막 구조를 갖도록 하는 것을 특징하여 하는 감기온 전계효과 트랜지스터 pH센서를 이용한 이온센서.A source 2, a drain 3, a silicon oxide film 4, a silicon nitride 5, and an aluminum metal electrode 6 are sequentially formed on a silicon substrate 1 in a conventional semiconductor manufacturing process, A lipophilic polymer sensitizing solution is spin coated on the pH sensing gate 8 of the substrate 5 and dried to form a lipophilic polymer thin film 11. The hydrophilic polymer sensitizing solution containing the sensing material is spin coated thereon and dried, And a hydrophilic polymer thin film (12) having a double-layer structure composed of a lipophilic polymer thin film and a hydrophilic thin film is formed through a photolithography process of exposing the substrate to an ultraviolet light source and developing it with a solvent. Ion sensor using a field effect transistor pH sensor. 제2항에 있어서, 상기 친유성 고분자박막(11)을 반도체제조공정에 쓰이는 네가티브포토레지스트인 환화고무에 감광성 고분자(ORM-83)로 형성하고, 친수성 고분자 감지막으로는 (PVP-PVAc용(poly[vinylpyrrolidinone-co-viny1 acetate])를 사용하여 형성시킨 이중막 구조를 갖는 것을 특징으로 하는 감이온 전계효과 트랜지스터 pH센서를 이용한 이온센서의 제조방법.The method according to claim 2, wherein the lipophilic polymer thin film (11) is formed of a photosensitive polymer (ORM-83) on a cyclic rubber which is a negative photoresist used in a semiconductor manufacturing process, and a hydrophilic polymer membrane poly [vinylpyrrolidinone-co-viny1 acetate]) having a double-layer structure. 제2항에 있어서, 상기 친수성 감지막용 고분자 감광액에 감지물질로서 발리노마이신이 포함되도록 하여칼륨이온센서를 제조하는 것을 특징으로 하는 감이온 전계효과 트랜지스터 pH센서를 이용한 이온센서의 제조방법.[3] The method of claim 2, wherein the polymeric sensitizing solution for the hydrophilic sensing membrane contains valence nymesin as a sensing material to produce a potassium ion sensor. 제2항에 있어서, 상기 친수성 감지막용 고분자 감광액에 감지물질로서 N,N,N`,N`-tetracyclohexy1-3-oxapentadiamine(ETH-129)을 포함시켜 칼슘이온센서를 제조하는 것을 특징으로 하는 감이온 전계효과 트랜지스터 pH센서를 이용한 이온센서의 제조방법.The calcium ion sensor according to claim 2, wherein a calcium ion sensor is manufactured by incorporating N, N, N ', N`-tetracyclohexy1-3-oxapentadiamine (ETH-129) as a sensing substance into the polymer sensitizing solution for the hydrophilic sensing membrane Method of manufacturing ion sensor using pH sensor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960004671A 1996-02-26 1996-02-26 Ion sensor using deionized field effect transistor pH sensor and its manufacturing method KR0163405B1 (en)

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KR1019960004671A KR0163405B1 (en) 1996-02-26 1996-02-26 Ion sensor using deionized field effect transistor pH sensor and its manufacturing method

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KR1019960004671A KR0163405B1 (en) 1996-02-26 1996-02-26 Ion sensor using deionized field effect transistor pH sensor and its manufacturing method

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KR970062686A true KR970062686A (en) 1997-09-12
KR0163405B1 KR0163405B1 (en) 1999-03-30

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