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KR970053788A - Laser repair key for semiconductor chip rescue - Google Patents

Laser repair key for semiconductor chip rescue Download PDF

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Publication number
KR970053788A
KR970053788A KR1019950069584A KR19950069584A KR970053788A KR 970053788 A KR970053788 A KR 970053788A KR 1019950069584 A KR1019950069584 A KR 1019950069584A KR 19950069584 A KR19950069584 A KR 19950069584A KR 970053788 A KR970053788 A KR 970053788A
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South Korea
Prior art keywords
axis
feature
laser repair
semiconductor chip
repair key
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KR1019950069584A
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Korean (ko)
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KR100372659B1 (en
Inventor
박병옥
김동열
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김주용
현대전자산업 주식회사
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Priority to KR1019950069584A priority Critical patent/KR100372659B1/en
Publication of KR970053788A publication Critical patent/KR970053788A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

본 발명은 반도체 칩의 불량 셀 발생시 이를 구제하기위하여 불량 셀을 끊고 스페어 셀로 연결시키는 퓨즈의 링크를 제거하는 작업에서 정확한 위치의 퓨즈 링크를 찾기 위하여 전체적인 다이의 위치를 파악하는 레이저 빔 스캔 작업의 기준이 되는 레이저 리페어 키에 관한 것으로, 스캔 인식의 정확성을 기할 수 있도록 구조를 개선한 것이다. 이러한 본 발명은 다이의 사각 모서리에 각각 위치하는 X축 피쳐와 Y축 피쳐를 구비하는 반도체 칩 구제용 레이저 리페어 키를 구성함에 있어서, 상기 X축 피쳐와 Y축 피쳐와의 사이에 X축, Y축 피쳐의 스캔 라인에 의해 결정되는 PGC위치를 정확한 위치로 보상하기 위한 45°방향의 스캔 라인으로 보다 정확한 위치로 유도하여 보정해 줄 수가 있다. 따라서 256M DRAM급 이상의 고집적 디바이스의 레이저 리페어시 발생할 수 소지가 있는 극히 미세한 거리 오차(약 1~2㎛)를 극소화시킬 수가 있으므로 리페어 할 링크 부분 이외의 블로잉으로 인한 디바이스의 손상 가능성을 극소화시킬 수 있다.The present invention is a standard of laser beam scanning operation to find the position of the entire die in order to find the fuse link in the correct position in the operation of removing the link of the fuse that disconnects the defective cell and connects to the spare cell in order to remedy the defective cell of the semiconductor chip. The laser repair key is to improve the structure to ensure the accuracy of the scan recognition. In the present invention, in the construction of a semiconductor chip repair laser repair key having an X-axis feature and a Y-axis feature respectively positioned at the square corners of a die, the X-axis and Y-axis between the X-axis feature and the Y-axis feature 45 ° scan line to compensate the PGC position determined by the scan line of the axis feature to the correct position can be corrected by leading to a more accurate position. Therefore, it is possible to minimize the extremely small distance error (about 1 ~ 2㎛) that can occur during laser repair of high-integration devices of 256M DRAM or more, thereby minimizing the possibility of damage to the device due to blowing other than the link portion to be repaired. .

선택도 : 제5도Selectivity: 5th

Description

반도체 칩 구제용 레이저 리페어 키Laser repair key for semiconductor chip rescue

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제4도 내지 제7도는 본 발명에 의한 바도체 칩 구제용 레이저 리페어 키를 설명하기 위한 도면으로써, 제4도는 본 발명에 의한 레이저 리페어 키의 구조도 이고,4 to 7 are diagrams for explaining the laser repair key for the semiconductor chip relief according to the present invention, Figure 4 is a structural diagram of the laser repair key according to the present invention,

제5도는 제4도의 스캔 결과 스캔 라인이 형성되는 과정 및 결과를 보인 도면 이며,FIG. 5 is a view illustrating a process and results of forming a scan result scan line of FIG.

제6도는 본 발명의 레이저 리페어 키를 스캔 할 때 PGC위치가 PGC'위치로 유도되어 보상되는 과정을 보인 도면 이고,6 is a view showing a process in which the PGC position is compensated by being directed to the PGC 'position when scanning the laser repair key of the present invention,

제7도는 본 발명의 레이저 리페어 키를 사용하여 한 다이를 얼라인하여 다이내의 센터 위치를 정확히 찾는 과정을 보인 도면이다.7 is a view showing a process of accurately aligning a die using the laser repair key of the present invention to accurately find the center position of the die.

Claims (4)

다이의 사각 모서리에 각각 위치하는 X축 피쳐와 Y축 피쳐를 구비하는 반도체 칩 구제용 레이저 리페어 키를 구성함에 있어서, 상기 X축 피쳐와 Y축 피쳐와의 사이에 X축, Y축피쳐의 스탠 라인에 의해 결정되는 PGC 위치를 정확한 위치로 보상하기 위한 45°방향의 스탠 라인을 형서하는 제3의 피쳐를 설치하여 구성한 것을 특징으로 하는 반도체 칩 구제용 레이저 리페어 키.In constructing a laser chip for semiconductor chip relief having an X-axis feature and a Y-axis feature respectively positioned at the rectangular corners of a die, a stand of X-axis and Y-axis features is disposed between the X-axis and Y-axis features. A laser repair key for semiconductor chip relief, comprising a third feature that forms a stand line in a 45 ° direction to compensate for a PGC position determined by a line to an accurate position. 제1항에 있어서, 상기 제3의 패쳐는 X축 피쳐와 Y축 피쳐의 직각 연결부로부터 내측으로 연장되게 형성되는 것을 특징으로 하는 반도체 칩 구제용 레이저 리페어 키The semiconductor repair key of claim 1, wherein the third patcher extends inward from a right angle connection between the X-axis feature and the Y-axis feature. 제1항에 있어서, 상기 제3의 피쳐는 X축 피쳐와 Y축 피쳐와 분리되게 형성되는 것을 특징으로 하는 반도체 칩 구제용 레이저 리페어 키.The laser repair key of claim 1, wherein the third feature is formed separately from the X-axis feature and the Y-axis feature. 제3항에 있어서, 상기 제3의 피쳐는 정사각형, 직사각형 또는 45°방향으로 장축을 형성하는 다각형으로 형성되는 것을 특징으로 하는 반도체 칩 구제용 레이저 리페어 키.The laser repair key of claim 3, wherein the third feature is formed of a square, a rectangle, or a polygon forming a long axis in a 45 ° direction. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950069584A 1995-12-30 1995-12-30 Laser repair key for semiconductor chip repair Expired - Fee Related KR100372659B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950069584A KR100372659B1 (en) 1995-12-30 1995-12-30 Laser repair key for semiconductor chip repair

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Application Number Priority Date Filing Date Title
KR1019950069584A KR100372659B1 (en) 1995-12-30 1995-12-30 Laser repair key for semiconductor chip repair

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KR970053788A true KR970053788A (en) 1997-07-31
KR100372659B1 KR100372659B1 (en) 2003-06-19

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2806242B2 (en) * 1993-12-27 1998-09-30 日本電気株式会社 Alignment mark for electron beam exposure and method for detecting alignment mark for electron beam exposure

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