KR970052914A - How to operate mass flow controller - Google Patents
How to operate mass flow controller Download PDFInfo
- Publication number
- KR970052914A KR970052914A KR1019950046355A KR19950046355A KR970052914A KR 970052914 A KR970052914 A KR 970052914A KR 1019950046355 A KR1019950046355 A KR 1019950046355A KR 19950046355 A KR19950046355 A KR 19950046355A KR 970052914 A KR970052914 A KR 970052914A
- Authority
- KR
- South Korea
- Prior art keywords
- valve
- exhaust port
- flow controller
- chamber
- mfc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Flow Control (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
배기구측 또는 챔버측으로부터 유해가스 및 불순물의 유입을 방지할 수 있는 MFC의 구동방법에 관하여 개시한다. 본 발명은 가스가 제1밸브를 통하여 유량 조절기(mass flow controller)에 유입되고, 상기 유량조절기를 구동하여 소정 양의 가스를 제2밸브를 통하여 배기구 또는 챔버로 배출하는 MFC의 구동방법에 있어서, 상기 제2밸브는 상기 배기구 또는 챔버로부터 유해가스의 역류를 방지하도록 상기 유량조절기보다 늦게 오픈하는 것을 특징으로 하는 MFC의 구동방법을 제공한다. 상기 MFC는 상기 제2밸브보다 0.1초 내지 10분 늦게 오픈한다. 본 발명에 의하면 배기구 또는 챔버측으로부터 유해가스 및 불순물 입자의 유입을 방지하여 MFC의 부식 및 기능저하를 방지할 수 있다.A method of driving an MFC capable of preventing the introduction of harmful gas and impurities from an exhaust port side or a chamber side is disclosed. In the present invention, a gas flows into a mass flow controller through a first valve, and drives the flow controller to discharge a predetermined amount of gas to an exhaust port or a chamber through a second valve. The second valve provides a driving method of the MFC, characterized in that to open later than the flow regulator to prevent the back flow of harmful gas from the exhaust port or the chamber. The MFC opens 0.1 seconds to 10 minutes later than the second valve. According to the present invention, it is possible to prevent the inflow of harmful gas and impurity particles from the exhaust port or the chamber side to prevent corrosion and deterioration of the MFC.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 종래 기술과 본 발명에 의하여 발생한 튜브의 불순물 입자의 수를 비교한 그래프이다.2 is a graph comparing the number of impurity particles in a tube produced by the prior art and the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950046355A KR100360393B1 (en) | 1995-12-04 | 1995-12-04 | Method for controlling mass flow |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950046355A KR100360393B1 (en) | 1995-12-04 | 1995-12-04 | Method for controlling mass flow |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970052914A true KR970052914A (en) | 1997-07-29 |
KR100360393B1 KR100360393B1 (en) | 2003-01-24 |
Family
ID=37490503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950046355A Expired - Fee Related KR100360393B1 (en) | 1995-12-04 | 1995-12-04 | Method for controlling mass flow |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100360393B1 (en) |
-
1995
- 1995-12-04 KR KR1019950046355A patent/KR100360393B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100360393B1 (en) | 2003-01-24 |
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