KR970052764A

KR970052764A - Dry etching apparatus and method

Info

Publication number: KR970052764A
Application number: KR1019950055028A
Authority: KR
Inventors: 김유성
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1995-12-22
Filing date: 1995-12-22
Publication date: 1997-07-29

Abstract

본 발명은 알루미늄 등의 금속배선막을 패터닝할 때 사용되는 건식식각장치 의 구조와 금속배선막의 건식식각방법에 관한 것으로서, 프로세스챔버(10)내에서 소정간격을 갖고 서로 대향하게 배치되어 있는 애노드(12)와 캐소드(14)를 갖고, 상기 캐소드(14)상에 재치된 웨이퍼(20)상의 금속배선막을 플라즈마가스로 식각하여 패턴을 형성하기 위하여 상기 프로세서챔버(10)의 내부온도를 상기 애노드(12)와 상기 캐소드(14)의 내부에서 순환되는 냉각수에 의해서 결정되도록 하는 온도유지수단 또는 공정을 포함한다. 상술한 건식식각장치 및 방법에 의하면, 식각공정중에 프로세서챔버(10)내에 부유되는 식각된 파티클의 양을 크게 감소시킬 수 있어서 금속패턴간의 브리지형상을 방지할 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a dry etching apparatus used for patterning a metal wiring film such as aluminum and a dry etching method of a metal wiring film. The anode 12 is disposed to face each other at a predetermined interval in the process chamber 10. And the cathode 14, and the internal temperature of the processor chamber 10 to form a pattern by etching the metal wiring film on the wafer 20 mounted on the cathode 14 with plasma gas to form a pattern. ) And temperature holding means or process to be determined by the cooling water circulated in the cathode (14). According to the above-described dry etching apparatus and method, the amount of etched particles suspended in the processor chamber 10 during the etching process can be greatly reduced, thereby preventing the bridge shape between the metal patterns.

Description

Dry etching apparatus and method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명의 실시예에 따른 금속막의 건식식각방법이 적용되는 건식식각장치의 구조를 보여주고 있는 구성도.2 is a block diagram showing the structure of a dry etching apparatus to which a dry etching method of a metal film according to an embodiment of the present invention is applied.

Claims

The metal wiring film on the wafer 20 having the anode 12 and the cathode 14 disposed to face each other at predetermined intervals in the process chamber 10 is etched with plasma gas. In the dry etching body to form a pattern, comprising a temperature holding means for determining the internal temperature of the processor chamber 10 by the cooling water circulated in the anode 12 and the cathode 14 Dry etching apparatus characterized in that.

The dry etching apparatus according to claim 1, wherein the internal temperature of the processor chamber (10) is in a range of about 50 ° C to 100 ° C, preferably about 60 ° C.

2. The dry type according to claim 1, wherein the temperature maintaining means includes cooling lines 16a and 16b respectively installed so that the coolant supplied from the outside is circulated in the anode 12 and the cathode 14, respectively. Etching device.

The metal wiring film on the wafer 20 having the anode 12 and the cathode 14 disposed to face each other at predetermined intervals in the process chamber 10 is etched with plasma gas. In the etching method of the metal wiring film of the dry etching apparatus to form a pattern, the internal temperature of the processor chamber 10 is determined only by the cooling water circulated in the anode 12 and the cathode 14 to form a metal wiring film. Dry etching apparatus comprising a step of etching.

The method of claim 4, wherein the internal temperature of the processor chamber (10) is in the range of about 50 ℃ to 100 ℃.

The dry etching method according to claim 4, wherein the internal temperature of the processor chamber (10) is preferably about 60 ° C.

※ Note: The disclosure is based on the initial application.