KR970049037A - Chemically Amplified Photoresist and Manufacturing Method Thereof - Google Patents
Chemically Amplified Photoresist and Manufacturing Method Thereof Download PDFInfo
- Publication number
- KR970049037A KR970049037A KR1019950067004A KR19950067004A KR970049037A KR 970049037 A KR970049037 A KR 970049037A KR 1019950067004 A KR1019950067004 A KR 1019950067004A KR 19950067004 A KR19950067004 A KR 19950067004A KR 970049037 A KR970049037 A KR 970049037A
- Authority
- KR
- South Korea
- Prior art keywords
- chemically amplified
- amplified photoresist
- base resin
- single monomer
- manufacturing
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims abstract 7
- 239000000178 monomer Substances 0.000 claims abstract description 13
- 239000011347 resin Substances 0.000 claims abstract description 9
- 229920005989 resin Polymers 0.000 claims abstract description 9
- 230000002209 hydrophobic effect Effects 0.000 claims abstract 5
- 239000000126 substance Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 3
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 claims 2
- 235000019270 ammonium chloride Nutrition 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 2
- KWMBADTWRIGGGG-UHFFFAOYSA-N 2-diethoxyphosphorylacetonitrile Chemical compound CCOP(=O)(CC#N)OCC KWMBADTWRIGGGG-UHFFFAOYSA-N 0.000 claims 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 239000003054 catalyst Substances 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000004587 chromatography analysis Methods 0.000 claims 1
- 238000004440 column chromatography Methods 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 239000008098 formaldehyde solution Substances 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 claims 1
- 235000019341 magnesium sulphate Nutrition 0.000 claims 1
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical class [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims 1
- 238000004904 shortening Methods 0.000 abstract 1
- 238000005266 casting Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Landscapes
- Materials For Photolithography (AREA)
Abstract
본 발명은 화학증폭형 포토레지스트 및 그 제조방법에 관해 개시한다. 본 발명에 의한 포토레지스트의 베이스 수지는 친수성부분과 수소성부분을 함께 갖는 아래의 단일 모노머를 구비하고 있다.The present invention discloses a chemically amplified photoresist and a method of manufacturing the same. The base resin of the photoresist according to the present invention includes the following single monomer having both a hydrophilic portion and a hydrogenated portion.
따라서 본 발명에 의하면, 종래에 있어서는 친수성모노머와 소수성모노머를 각각 형성해야하는 것과는 달리, 본 발명에서는 이들 두성질을 함께 갖는 단일 모노머를 형성하면되므로 포토레지스트의 제조공정을 줄이는 것이 가능하다. 따라서 제조공정 단축에 따른 경제적인 부담은 종래에 비해 감소하는 것을 자명하다. 아울러 다른 기능을 갖는 단일 모노머와 공중합시키므로써, 다양한 기능을 갖는 포토레지스트를 제조할 수 있다.Therefore, according to the present invention, in contrast to the conventional need to form a hydrophilic monomer and a hydrophobic monomer, in the present invention, it is possible to reduce the manufacturing process of the photoresist by forming a single monomer having these two properties. Therefore, the economic burden of shortening the manufacturing process is obviously reduced compared to the prior art. In addition, by copolymerizing with a single monomer having a different function, it is possible to produce a photoresist having a variety of functions.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1도는 본 발명에 의한 방법으로 단일 모노머(monomer)가 형성되는 반응을 나타내는 화학주조식이다,1 is a chemical casting formula showing a reaction in which a single monomer is formed by the method according to the present invention.
제2도는 제1도의 모노머(monomer)를 이용하여 베이스 수지가 형성되는 반응을 나타내는 화학구조식이다,2 is a chemical structural formula showing a reaction in which a base resin is formed using the monomer of FIG.
제3도는 본 발명에 의한 포토레지스트의 광학적 미케니즘을 나타내는 화학구조식이다.3 is a chemical structural formula showing the optical mechanism of the photoresist according to the present invention.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950067004A KR970049037A (en) | 1995-12-29 | 1995-12-29 | Chemically Amplified Photoresist and Manufacturing Method Thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950067004A KR970049037A (en) | 1995-12-29 | 1995-12-29 | Chemically Amplified Photoresist and Manufacturing Method Thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970049037A true KR970049037A (en) | 1997-07-29 |
Family
ID=66638214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950067004A KR970049037A (en) | 1995-12-29 | 1995-12-29 | Chemically Amplified Photoresist and Manufacturing Method Thereof |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970049037A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000076980A (en) * | 1999-03-29 | 2000-12-26 | 카네코 히사시 | Chemically amplified resist |
-
1995
- 1995-12-29 KR KR1019950067004A patent/KR970049037A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000076980A (en) * | 1999-03-29 | 2000-12-26 | 카네코 히사시 | Chemically amplified resist |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19951229 |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |