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KR970030875A - Semiconductor device including a trench structure - Google Patents

Semiconductor device including a trench structure Download PDF

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Publication number
KR970030875A
KR970030875A KR1019950044292A KR19950044292A KR970030875A KR 970030875 A KR970030875 A KR 970030875A KR 1019950044292 A KR1019950044292 A KR 1019950044292A KR 19950044292 A KR19950044292 A KR 19950044292A KR 970030875 A KR970030875 A KR 970030875A
Authority
KR
South Korea
Prior art keywords
trench
semiconductor device
active region
width
trench structure
Prior art date
Application number
KR1019950044292A
Other languages
Korean (ko)
Inventor
김남주
임순권
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950044292A priority Critical patent/KR970030875A/en
Publication of KR970030875A publication Critical patent/KR970030875A/en

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Abstract

본 발명은 트렌치 구조의 반도체 장치에 관한 것으로서, 다각형이나 원과 같은 모양을 이용하여, 트렌치의 모서리 부분의 폭을 트렌치 다른 부분의 폭과 같게 형성함으로써 트렌치 모서리에 응축되는 스트레스를 분산시키는 트렌치 구조의 반도체 장치이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a trench structure, wherein the trench structure is formed by using a polygonal or circular shape such that the width of the corner portion of the trench is equal to the width of the other portion of the trench. It is a semiconductor device.

Description

트렌치 구조를 포함하는 반도체 장치Semiconductor device including a trench structure

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명의 제1실시예에 의한 트렌치 구조의 반도체 장치의 평면도이다.3 is a plan view of a semiconductor device having a trench structure according to a first embodiment of the present invention.

제4도는 본 발명의 제1실시예에 의한 트렌치를 포함하는 다수의 활성 영역이 연결된 제1구조를 도시한 평면도이다.4 is a plan view illustrating a first structure in which a plurality of active regions including trenches according to a first embodiment of the present invention are connected.

제5도는 본 발명의 제1실시예에 의한 트렌치를 포함하는 다수의 활성 영역이 연결된 제2구조를 도시한 평면도이다.5 is a plan view illustrating a second structure in which a plurality of active regions including trenches according to a first embodiment of the present invention are connected.

Claims (8)

폭이 일정한 트렌치가 형성되어 있는 반도체 기판, 상기 반도체 기판의 트렌치 안 쪽으로 형성되어 있는 활성 영역을 포함하는 반도체 장치.A semiconductor device comprising a semiconductor substrate having a trench having a constant width, and an active region formed in the trench of the semiconductor substrate. 제1항에서, 상기 활성 영역은 트렌치로부터 안쪽으로 일정 거리를 두고 형성되어 있는 반도체 장치.The semiconductor device of claim 1, wherein the active region is formed at a predetermined distance inward from the trench. 제2항에서, 상기 활성 영역의 모서리에서 트렌치까지의 거리는 상기 활성 영역의 다른 부분과 트렌치의 거리 이상인 반도체 장치.3. The semiconductor device of claim 2, wherein a distance from an edge of the active region to a trench is greater than or equal to a trench from another portion of the active region. 제1항에서, 상기 활성 영역의 모서리 부근의 상기 트렌치의 폭이 상기 트렌치의 다른 부분의 폭과 같은 반도체 장치.The semiconductor device of claim 1, wherein a width of the trench near an edge of the active region is equal to a width of another portion of the trench. 제4항에서, 상기 활성 영역의 모서리 부근의 상기 트렌치의 경계가 직선으로 이루어진 반도체 장치.The semiconductor device of claim 4, wherein a boundary of the trench near a corner of the active region is a straight line. 제4항에서, 상기 활성 영역의 모서리 부근의 상기 트렌치의 경계가 곡선으로 이루어진 반도체 장치.The semiconductor device of claim 4, wherein a boundary of the trench near a corner of the active region is curved. 제1항에서, 상기 활성 영역과 상기 트렌치를 포함하는 반도체 기판이 다수가 연결되어 있는 반도체 장치.The semiconductor device of claim 1, wherein a plurality of semiconductor substrates including the active region and the trench are connected to each other. 제7항에서, 상기 활성 영역의 모서리가 모인 부분의 트렌치 중심부에 형성되어 있는 실리콘 막대를 더 포함하는 반도체 장치.The semiconductor device of claim 7, further comprising a silicon rod formed in a central portion of a trench in the corner of the active region. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950044292A 1995-11-28 1995-11-28 Semiconductor device including a trench structure KR970030875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950044292A KR970030875A (en) 1995-11-28 1995-11-28 Semiconductor device including a trench structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950044292A KR970030875A (en) 1995-11-28 1995-11-28 Semiconductor device including a trench structure

Publications (1)

Publication Number Publication Date
KR970030875A true KR970030875A (en) 1997-06-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950044292A KR970030875A (en) 1995-11-28 1995-11-28 Semiconductor device including a trench structure

Country Status (1)

Country Link
KR (1) KR970030875A (en)

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