KR970030475A - 화학증착에 의해 비스(2,2,6,6-테트라메틸-3,5-헵탄디오나토)아연으로부터 산화아연막을 형성하는 방법 - Google Patents
화학증착에 의해 비스(2,2,6,6-테트라메틸-3,5-헵탄디오나토)아연으로부터 산화아연막을 형성하는 방법 Download PDFInfo
- Publication number
- KR970030475A KR970030475A KR1019950041205A KR19950041205A KR970030475A KR 970030475 A KR970030475 A KR 970030475A KR 1019950041205 A KR1019950041205 A KR 1019950041205A KR 19950041205 A KR19950041205 A KR 19950041205A KR 970030475 A KR970030475 A KR 970030475A
- Authority
- KR
- South Korea
- Prior art keywords
- zinc
- heptanedionato
- tetramethyl
- oxide film
- bis
- Prior art date
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract 10
- 238000000034 method Methods 0.000 title claims abstract 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 title claims abstract 5
- 239000011701 zinc Substances 0.000 title claims abstract 5
- 229910052725 zinc Inorganic materials 0.000 title claims abstract 5
- 239000011787 zinc oxide Substances 0.000 title claims abstract 5
- 238000005229 chemical vapour deposition Methods 0.000 title claims 2
- 239000000758 substrate Substances 0.000 claims abstract 5
- 229910052582 BN Inorganic materials 0.000 claims abstract 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910002601 GaN Inorganic materials 0.000 claims abstract 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract 2
- 238000000151 deposition Methods 0.000 claims abstract 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000012159 carrier gas Substances 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
비스(2,2,6,6,-테트라메틸-3,5-헵탄디오나토) 아연을 화학증착하여 기질 위에 산화아연 막을 형성하는 것이 개시되어 있으며, 이 산화아연 막 위에 질화갈륨, 탄화규소 및 질화붕소의 막을 성장시킬 수도 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (5)
- 비스(2,2,6,6,-테트라메틸-3,5-헵탄디오나토) 아연을 화학증착하여 기질위에 산화아연 막을 형성하는 방법.
- 제1항에 있어서, 상기 기질이 규소 웨이퍼(111)면인 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 기질이 C-사파이어인 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 화학증착에서 상기 비스(2,2,6,6,-테트라메틸-3,5-헵탄디오나토) 아연의 운반 기체가 산소인 것을 특징으로하는 방법.
- 비스(2,2,6,6,-테트라메틸-3,5-헵탄디오나토) 아연을 화학증착하여 기질 위에 산화아연을 막을 형성하고, 상기 산화아연 막 위에 질화갈륨, 탄화규소 또는 질학붕소 막을 추가로 형성하는 방법.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950041205A KR970030475A (ko) | 1995-11-14 | 1995-11-14 | 화학증착에 의해 비스(2,2,6,6-테트라메틸-3,5-헵탄디오나토)아연으로부터 산화아연막을 형성하는 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950041205A KR970030475A (ko) | 1995-11-14 | 1995-11-14 | 화학증착에 의해 비스(2,2,6,6-테트라메틸-3,5-헵탄디오나토)아연으로부터 산화아연막을 형성하는 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970030475A true KR970030475A (ko) | 1997-06-26 |
Family
ID=66587241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950041205A KR970030475A (ko) | 1995-11-14 | 1995-11-14 | 화학증착에 의해 비스(2,2,6,6-테트라메틸-3,5-헵탄디오나토)아연으로부터 산화아연막을 형성하는 방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970030475A (ko) |
-
1995
- 1995-11-14 KR KR1019950041205A patent/KR970030475A/ko not_active Application Discontinuation
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| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 19980624 Patent event code: PE09021S01D |
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| PE0601 | Decision on rejection of patent |
Patent event date: 19981026 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 19980624 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |