KR970023821A - STO and BTO thin film manufacturing method and device thereof having high dielectric properties - Google Patents

Abstract

The present invention relates to a STO and BTO thin film manufacturing method and a device having a high dielectric property, by applying RF power to the thin film manufacturing apparatus to excite the plasma, the reaction materials for STO or BTO of multiple systems can easily participate in the deposition reaction. To promote dissociation reaction with physical energy, and to form plasma to set process conditions to promote dissociation of reaction raw material ions at high temperature at very low pressure. Feeds the raw materials in a manner that allows them to reach, and as most of the raw materials for STO or BTO thin films are solid or liquid at room temperature, when these reaction raw materials are vaporized and supplied, they remove residual gas which may remain in the gas pipe. By depositing STO or BTO thin films, good thin films with high dielectric properties can be formed. have.

Description

STO and BTO thin film manufacturing method and device thereof having high dielectric properties

Since this is an open matter, no full text was included.

1 is a cross-sectional view showing the configuration of the STO and BTO thin film deposition apparatus according to the method of the present invention.

Claims (14)

In the STO and BTO thin film manufacturing method having high dielectric properties, by dissipating the plasma by applying RF power, the dissociation reaction by physical energy is generated so that the ionic state of the multi-system STO or STO reaction materials can easily participate in the deposition reaction. Setting the process conditions so that the reaction raw material ions dissociated by the excited plasma may cause a deposition reaction at a high temperature at a low pressure, and reacting the reaction raw materials without deterioration under low steam pressure and high temperature Supplying the reaction raw material by attaching an amine group to the regenerator so as to be supplied to the furnace, and providing a temperature control means up to the shower head to suppress deterioration reaction and gas phase reaction at high temperature, and remaining in the gas pipe inside the reactor. Deposition of STO or BTO thin film while removing residual gas from vaporized reaction source using purge gas BTO and STO thin film manufacturing method having a high dielectric property is characterized in that the step consisting of. The method for manufacturing STO and BTO thin films having high dielectric properties according to claim 1, wherein an amine group chemical vaporized with the purge gas or N ₂ gas is used. The method of claim 2, wherein the purging gas is discharged to the pump directly through a manifold adjacent to the reactor. The high dielectric property of claim 1 or 2, wherein the vaporized reaction raw material and the purging gas are maintained at a temperature of 200 to 300 DEG C in order to prevent recondensation in the gas pipe and the exhaust pipe. STO and BTO thin film manufacturing method having. The method according to claim 1, wherein the shower head is maintained at a high temperature at a constant temperature to prevent particles from being formed by the gas phase reaction between the reaction materials during the thin film deposition process, and an AC type RF power is applied to the reaction materials. STO and BTO thin film manufacturing method having high dielectric properties. The method of claim 5, wherein the temperature of the shower head is controlled at 200 ~ 250 ℃ STO and BTO thin film manufacturing method having a high dielectric property, characterized in that. The STO having high dielectric properties according to claim 1, wherein the thin film is formed by etching CF ₄ or C ₂ F ₆ , NF ₃ , SF _6, and O ₂ into a plasma. And BTO thin film production method. In the STO and BTO thin film deposition apparatus having a high dielectric property, in order to form the internal space of the device, the chamber body portion surrounded by the wall surface, and the reaction material is placed on the chamber body portion to form a thin film A manifold, a shower head which converts the reaction materials in the manifold into a gas state, and sprays it onto a wafer; a gas diffused from the shower head is widely spread around the shower head, the wafer, and the heater block; STO and BTO thin film deposition apparatus comprising a baffle guide for preventing the rapid exit and the like, and a plate for the RF electroload which is formed on the top of the wafer to form a plasma. 9. The apparatus of claim 8, wherein a device for heating or controlling the internal temperature to a predetermined temperature is provided in the manifold to prevent condensation of the reaction raw materials in the liquid and solid state at room temperature by the temperature decrease. STO and STO thin film deposition apparatus. [9] The STO and BTO thin film deposition apparatus of claim 8, wherein the plate for the RF electrorod is arranged at intervals of 2 to 3 mm with wires having a diameter of about 0.5 to 1.5 mm. The STO and BTO thin film deposition apparatus according to claim 10, wherein the RF electrorod plate is formed in a mesh form. The STO and BTO thin film deposition apparatus according to claim 8, wherein the baffle guide is formed of a cylindrical insulating material. The STO and BTO thin film deposition apparatus according to claim 12, wherein the insulating material is either ceramic or quartz. The STO and BTO thin film deposition apparatus according to claim 8 or 12, wherein a distance between the lower end of the baffle guide and the lower substrate on which the wafer is placed is 3 to 5 mm. ※ Note: The disclosure is based on the initial application.