[go: up one dir, main page]

KR970019740U - Build-up charge prevention device for semiconductor ion implanter - Google Patents

Build-up charge prevention device for semiconductor ion implanter

Info

Publication number
KR970019740U
KR970019740U KR2019950030047U KR19950030047U KR970019740U KR 970019740 U KR970019740 U KR 970019740U KR 2019950030047 U KR2019950030047 U KR 2019950030047U KR 19950030047 U KR19950030047 U KR 19950030047U KR 970019740 U KR970019740 U KR 970019740U
Authority
KR
South Korea
Prior art keywords
build
prevention device
ion implanter
charge prevention
semiconductor ion
Prior art date
Application number
KR2019950030047U
Other languages
Korean (ko)
Other versions
KR0134904Y1 (en
Inventor
권창헌
Original Assignee
현대전자산업주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 현대전자산업주식회사 filed Critical 현대전자산업주식회사
Priority to KR2019950030047U priority Critical patent/KR0134904Y1/en
Publication of KR970019740U publication Critical patent/KR970019740U/en
Application granted granted Critical
Publication of KR0134904Y1 publication Critical patent/KR0134904Y1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR2019950030047U 1995-10-24 1995-10-24 Build-up Charge Prevention Device for Semiconductor Ion Implanters KR0134904Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019950030047U KR0134904Y1 (en) 1995-10-24 1995-10-24 Build-up Charge Prevention Device for Semiconductor Ion Implanters

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019950030047U KR0134904Y1 (en) 1995-10-24 1995-10-24 Build-up Charge Prevention Device for Semiconductor Ion Implanters

Publications (2)

Publication Number Publication Date
KR970019740U true KR970019740U (en) 1997-05-26
KR0134904Y1 KR0134904Y1 (en) 1999-03-20

Family

ID=19426823

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019950030047U KR0134904Y1 (en) 1995-10-24 1995-10-24 Build-up Charge Prevention Device for Semiconductor Ion Implanters

Country Status (1)

Country Link
KR (1) KR0134904Y1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100961202B1 (en) 2008-04-29 2010-06-09 주식회사 하이닉스반도체 Heterogeneous ion implantation apparatus and method using atomic vibration

Also Published As

Publication number Publication date
KR0134904Y1 (en) 1999-03-20

Similar Documents

Publication Publication Date Title
GB2343547B (en) An ion implanter with substrate neutralizer
TW520816U (en) Semiconductor device
DE69408017D1 (en) Ion implanter
AU5682898A (en) Device for processing semiconductor wafers
EP0739015A3 (en) Semiconductor memory device
GB2323212B (en) Secure semiconductor device
DE69303409D1 (en) Ion implanter device
SG63659A1 (en) Semiconductor device
GB2306028B (en) Semiconductor memory device
SG54130A1 (en) Staining technique for semiconductor device for sem exposure
GB2308740B (en) Semiconductor device
KR970019740U (en) Build-up charge prevention device for semiconductor ion implanter
GB2303963B (en) Semiconductor device
GB9513898D0 (en) Semiconductor device
IT241004Y1 (en) BLOCKING DEVICE FOR MULTIPOLAR ELECTRIC CONNECTORS
DE69525563D1 (en) ion implanter
KR970046672U (en) Ion implantation device for semiconductor manufacturing equipment
KR960032732U (en) Semiconductor ion implantation device
GB2304993B (en) Semiconductor device
KR960019087U (en) Wafer ion implanter
GB2304992B (en) Semiconductor device
KR980005343U (en) Ion implantation device for semiconductor manufacturing
KR950025875U (en) Ion implanter
KR970019726U (en) Focusing plate of ion implantation equipment for semiconductor device manufacturing
KR970059828U (en) Faraday device for semiconductor ion implantation equipment

Legal Events

Date Code Title Description
A201 Request for examination
UA0108 Application for utility model registration

Comment text: Application for Utility Model Registration

Patent event code: UA01011R08D

Patent event date: 19951024

UA0201 Request for examination

Patent event date: 19951024

Patent event code: UA02012R01D

Comment text: Request for Examination of Application

UG1501 Laying open of application
E902 Notification of reason for refusal
UE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event code: UE09021S01D

Patent event date: 19980430

E701 Decision to grant or registration of patent right
UE0701 Decision of registration

Patent event date: 19980929

Comment text: Decision to Grant Registration

Patent event code: UE07011S01D

REGI Registration of establishment
UR0701 Registration of establishment

Patent event date: 19981026

Patent event code: UR07011E01D

Comment text: Registration of Establishment

UR1002 Payment of registration fee

Start annual number: 1

End annual number: 3

Payment date: 19981026

UG1601 Publication of registration
UR1001 Payment of annual fee

Payment date: 20010918

Start annual number: 4

End annual number: 4

UR1001 Payment of annual fee

Payment date: 20020918

Start annual number: 5

End annual number: 5

UR1001 Payment of annual fee

Payment date: 20030919

Start annual number: 6

End annual number: 6

UR1001 Payment of annual fee

Payment date: 20040920

Start annual number: 7

End annual number: 7

UR1001 Payment of annual fee

Payment date: 20050922

Start annual number: 8

End annual number: 8

UR1001 Payment of annual fee

Payment date: 20060920

Start annual number: 9

End annual number: 9

UR1001 Payment of annual fee

Payment date: 20070914

Start annual number: 10

End annual number: 10

UR1001 Payment of annual fee

Payment date: 20081006

Start annual number: 11

End annual number: 11

FPAY Annual fee payment

Payment date: 20090922

Year of fee payment: 12

UR1001 Payment of annual fee

Payment date: 20090922

Start annual number: 12

End annual number: 12

EXPY Expiration of term