KR970018537A

KR970018537A - Capacitor Formation Method for Semiconductor Device

Info

Publication number: KR970018537A
Application number: KR1019950031092A
Authority: KR
Inventors: 하정민
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1995-09-21
Filing date: 1995-09-21
Publication date: 1997-04-30

Abstract

본 발명은 탄탈륨 화합물을 전극으로 사용하는 반도체 소자의 커패시터 형성방법에 관한 것으로서, 실리콘 기판상에 이온 주입을 실시하고 필드 산화막으로 격리한 후 Ta 화합물을 사용하여 하부전극을 형성하는 단계; 상기 Ta 화합물로 형성된 하부전극의 표면을 산화시켜 TaON의 강한 장벽층 금속 전극을 얻거나 TaO의 얇은 산화막의 유전막을 얻는 단계; Ta₂O₅를 도포하여 커패시터의 유전체층을 형성하는 단계; Ta 화합물을 사용하여 커패시터의 상부전극을 형성하는 단계; BPGS 또는 USG로 평탄화한 후 콘택을 형성하고 금속 배선을 형성하는 단계를 포함함을 특징으로 한다. 본 발명에 의하면 장벽 금속으로 Ta 화합물을 Ta₂O₅유전막의 상하부 전극으로 사용함으로써 등가 산화막의 두께를 감소시킬 수 있다. 또한 하부전극 Ta 화합물 표면을 산화함으로써 강한 장벽층을 형성할 수 있고, Ta₂O₅를 도포하지 않은 상태에서도 TaO의 얇은 두께의 유전막을 확보하고, TaON을 형성하여 산소장벽 특성을 더욱 강화할 수 있다.The present invention relates to a method of forming a capacitor of a semiconductor device using a tantalum compound as an electrode, comprising: forming a lower electrode using a Ta compound after ion implantation on a silicon substrate and isolation with a field oxide film; Oxidizing the surface of the lower electrode formed of the Ta compound to obtain a strong barrier layer metal electrode of TaON or a dielectric film of a thin oxide film of TaO; Applying Ta ₂ O ₅ to form a dielectric layer of the capacitor; Forming an upper electrode of the capacitor using the Ta compound; Planarizing with BPGS or USG, and then forming a contact and forming a metal interconnect. According to the present invention, the thickness of the equivalent oxide film can be reduced by using the Ta compound as the upper and lower electrodes of the Ta ₂ O ₅ dielectric film as the barrier metal. In addition, a strong barrier layer can be formed by oxidizing the surface of the lower electrode Ta compound, and a TaO thin film can be secured even when Ta ₂ O ₅ is not applied, and TaON can be formed to further enhance oxygen barrier properties. .

Description

Capacitor Formation Method for Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A도 내지 제1E도는 본 발명에 따른 반도체 소자의 커패시터 형성방법을 설명하기 위해 도시한 단면도들이다.1A to 1E are cross-sectional views illustrating a method of forming a capacitor of a semiconductor device according to the present invention.

Claims

A method of forming a capacitor of a semiconductor device using a Ta compound as an electrode, the method comprising: implanting an ion on a silicon substrate, isolating a field oxide film, and then forming a lower electrode using the Ta compound; Oxidizing the surface of the lower electrode formed of the Ta compound to obtain a strong barrier layer metal electrode of TaON or a dielectric film of a thin oxide film of TaO; Applying Ta ₂ O ₅ to form a dielectric layer of the capacitor; Forming an upper electrode of the capacitor using the Ta compound; Forming a contact and forming a metal wiring after planarizing with BPGS (Boron Phosporus Siligate Glass) or USG (Undoped Siligate Glass).

The method of claim 1, wherein the Ta compound is TaN or TaC.

The semiconductor device of claim 1, wherein Ta ₂ O ₅ uses a high-k dielectric film of a metal oxide such as PZT {(pb, Zr, Ti) oxide}, BST {(Ba, Sr, Ti) oxide}. How to form a capacitor.

The method of claim 1, wherein the Ta compound electrode forming method is a PVD method using a Ta metal ticket, an organic source such as Ta (OC ₂ H ₅ ) 5, or a CVD method using a TaCl 5 source. How to form a capacitor.

2. The method of claim 1, wherein the capacitor shape includes three-dimensional structures such as planar, trench, stack, hemisphere, pin and cylinder type. Capacitor formation method of a semiconductor device, characterized in that the capacitor of various types, such as a composite type.